公开(公告)号：US08796846B2

公开(公告)日：2014-08-05

申请号：US12572590

申请日：2009-10-02

申请人： Yaojian Lin ,  Xusheng Bao ,  Kang Chen ,  Jianmin Fang

发明人： Yaojian Lin ,  Xusheng Bao ,  Kang Chen ,  Jianmin Fang

IPC分类号： H01L27/00

CPC分类号： H01L23/5386 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3135 ,  H01L24/13 ,  H01L24/16 ,  H01L24/19 ,  H01L24/96 ,  H01L25/0655 ,  H01L2221/68345 ,  H01L2221/68381 ,  H01L2224/04042 ,  H01L2224/05001 ,  H01L2224/05026 ,  H01L2224/05548 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/16225 ,  H01L2224/24137 ,  H01L2224/73204 ,  H01L2224/97 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3511 ,  H01L2224/29099 ,  H01L2924/00 ,  H01L2224/05099

摘要： A semiconductor device is made by forming a first conductive layer over a carrier. The first conductive layer has a first area electrically isolated from a second area of the first conductive layer. A conductive pillar is formed over the first area of the first conductive layer. A semiconductor die or component is mounted to the second area of the first conductive layer. A first encapsulant is deposited over the semiconductor die and around the conductive pillar. A first interconnect structure is formed over the first encapsulant. The first interconnect structure is electrically connected to the conductive pillar. The carrier is removed. A portion of the first conductive layer is removed. The remaining portion of the first conductive layer includes an interconnect line and UBM pad. A second interconnect structure is formed over a remaining portion of the first conductive layer is removed.

摘要翻译： 通过在载体上形成第一导电层制成半导体器件。 第一导电层具有与第一导电层的第二区域电隔离的第一区域。 在第一导电层的第一区域上形成导电柱。 半导体管芯或部件安装到第一导电层的第二区域。 第一密封剂沉积在半导体管芯上并且围绕导电柱。 在第一密封剂上形成第一互连结构。 第一互连结构电连接到导电柱。 载体被移除。 去除第一导电层的一部分。 第一导电层的剩余部分包括互连线和UBM垫。 在第一导电层的剩余部分上形成第二互连结构被去除。

公开(公告)号：US08575018B2

公开(公告)日：2013-11-05

申请号：US12628631

申请日：2009-12-01

申请人： Yaojian Lin ,  Jianmin Fang ,  Kang Chen ,  Pandi Chelvam Marimuthu ,  Rajendra D. Pendse

发明人： Yaojian Lin ,  Jianmin Fang ,  Kang Chen ,  Pandi Chelvam Marimuthu ,  Rajendra D. Pendse

IPC分类号： H01L21/44

CPC分类号： H01L24/03 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/3185 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/05 ,  H01L24/13 ,  H01L24/14 ,  H01L24/29 ,  H01L24/48 ,  H01L2224/0231 ,  H01L2224/0233 ,  H01L2224/0239 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05111 ,  H01L2224/05155 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/1411 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83805 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15174 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2224/03 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor wafer has a first conductive layer formed over its active surface. A first insulating layer is formed over the substrate and first conductive layer. A second conductive layer is formed over the first conductive layer and first insulating layer. A UBM layer is formed around a bump formation area over the second conductive layer. The UBM layer can be two stacked metal layers or three stacked metal layers. The second conductive layer is exposed in the bump formation area. A second insulating layer is formed over the UBM layer and second conductive layer. A portion of the second insulating layer is removed over the bump formation area and a portion of the UBM layer. A bump is formed over the second conductive layer in the bump formation area. The bump contacts the UBM layer to seal a contact interface between the bump and second conductive layer.

摘要翻译： 半导体晶片具有在其有效表面上形成的第一导电层。 第一绝缘层形成在衬底和第一导电层上。 在第一导电层和第一绝缘层上形成第二导电层。 在第二导电层上方的凸块形成区域周围形成UBM层。 UBM层可以是两个堆叠的金属层或三个堆叠的金属层。 第二导电层暴露在凸块形成区域中。 在UBM层和第二导电层上形成第二绝缘层。 第二绝缘层的一部分在凸块形成区域和UBM层的一部分上被去除。 在凸块形成区域中的第二导电层上形成凸块。 凸块接触UBM层以密封凸点和第二导电层之间的接触界面。

公开(公告)号：US20130113092A9

公开(公告)日：2013-05-09

申请号：US13333739

申请日：2011-12-21

申请人： Yaojian Lin ,  Pandi C. Marimuthu ,  Kang Chen ,  Hin Hwa Goh ,  Yu Gu ,  Il Kwon Shim ,  Rui Huang ,  Seng Guan Chow ,  Jianmin Fang ,  Xia Feng

发明人： Yaojian Lin ,  Pandi C. Marimuthu ,  Kang Chen ,  Hin Hwa Goh ,  Yu Gu ,  Il Kwon Shim ,  Rui Huang ,  Seng Guan Chow ,  Jianmin Fang ,  Xia Feng

IPC分类号： H01L23/52 ,  H01L21/56 ,  H01L21/78

CPC分类号： H01L23/3114 ,  H01L21/31 ,  H01L21/56 ,  H01L21/568 ,  H01L21/768 ,  H01L21/76877 ,  H01L21/78 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/49816 ,  H01L23/522 ,  H01L23/528 ,  H01L23/5389 ,  H01L23/562 ,  H01L24/19 ,  H01L24/20 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01043 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10156 ,  H01L2924/10157 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3511 ,  H01L2224/19 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2924/00012 ,  H01L2224/214

摘要： A semiconductor device has a semiconductor die and conductive layer formed over a surface of the semiconductor die. A first channel can be formed in the semiconductor die. An encapsulant is deposited over the semiconductor die. A second channel can be formed in the encapsulant. A first insulating layer is formed over the semiconductor die and first conductive layer and into the first channel. The first insulating layer extends into the second channel. The first insulating layer has characteristics of tensile strength greater than 150 MPa, elongation between 35-150%, and thickness of 2-30 micrometers. A second insulating layer can be formed over the semiconductor die prior to forming the first insulating layer. An interconnect structure is formed over the semiconductor die and encapsulant. The interconnect structure is electrically connected to the first conductive layer. The first insulating layer provides stress relief during formation of the interconnect structure.

摘要翻译： 半导体器件具有形成在半导体管芯的表面上的半导体管芯和导电层。 可以在半导体管芯中形成第一通道。 密封剂沉积在半导体管芯上。 可以在密封剂中形成第二通道。 在半导体管芯和第一导电层上形成第一绝缘层并进入第一沟道。 第一绝缘层延伸到第二通道中。 第一绝缘层的拉伸强度大于150MPa，伸长率在35-150％之间，厚度为2-30微米。 在形成第一绝缘层之前，可以在半导体管芯上方形成第二绝缘层。 在半导体管芯和密封剂上形成互连结构。 互连结构电连接到第一导电层。 第一绝缘层在形成互连结构期间提供应力释放。

公开(公告)号：US20120018904A1

公开(公告)日：2012-01-26

申请号：US13181290

申请日：2011-07-12

申请人： Yaojian Lin ,  Xia Feng ,  Jianmin Fang ,  Kang Chen

发明人： Yaojian Lin ,  Xia Feng ,  Jianmin Fang ,  Kang Chen

IPC分类号： H01L29/40 ,  H01L21/283

CPC分类号： H01L21/486 ,  H01L21/4857 ,  H01L21/561 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/48 ,  H01L23/525 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/0231 ,  H01L2224/02311 ,  H01L2224/02313 ,  H01L2224/02317 ,  H01L2224/0235 ,  H01L2224/02379 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05548 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/06131 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16225 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/48091 ,  H01L2224/48105 ,  H01L2224/48175 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/73265 ,  H01L2924/00 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/381 ,  H05K2201/09854 ,  H01L2924/01014 ,  H01L2924/0665 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A semiconductor device has a semiconductor die and first conductive layer formed over a surface of the semiconductor die. A first insulating layer is formed over the surface of the semiconductor die. A second insulating layer is formed over the first insulating layer and first conductive layer. An opening is formed in the second insulating layer over the first conductive layer. A second conductive layer is formed in the opening over the first conductive layer and second insulating layer. The second conductive layer has a width that is less than a width of the first conductive layer along a first axis. The second conductive layer has a width that is greater than a width of the first conductive layer along a second axis perpendicular to the first axis. A third insulating layer is formed over the second conductive layer and first insulating layer.

摘要翻译： 半导体器件具有形成在半导体管芯的表面上的半导体管芯和第一导电层。 在半导体管芯的表面上形成第一绝缘层。 在第一绝缘层和第一导电层上形成第二绝缘层。 在第一导电层上的第二绝缘层中形成开口。 在第一导电层和第二绝缘层上的开口中形成第二导电层。 第二导电层的宽度小于沿着第一轴线的第一导电层的宽度。 第二导电层的宽度大于沿着垂直于第一轴线的第二轴线的第一导电层的宽度。 在第二导电层和第一绝缘层上形成第三绝缘层。

公开(公告)号：US20110221055A1

公开(公告)日：2011-09-15

申请号：US12724367

申请日：2010-03-15

申请人： Yaojian Lin ,  Kang Chen ,  Jianmin Fang ,  Xia Feng

发明人： Yaojian Lin ,  Kang Chen ,  Jianmin Fang ,  Xia Feng

IPC分类号： H01L23/48 ,  H01L21/78 ,  H01L21/60 ,  H01L21/56 ,  H01L23/31

CPC分类号： H01L21/76879 ,  H01L21/563 ,  H01L21/568 ,  H01L23/3114 ,  H01L23/49816 ,  H01L23/5226 ,  H01L23/5389 ,  H01L24/18 ,  H01L24/19 ,  H01L24/82 ,  H01L24/96 ,  H01L2223/5448 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/18 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor wafer has a plurality of first semiconductor die. A first conductive layer is formed over an active surface of the die. A first insulating layer is formed over the active surface and first conductive layer. A repassivation layer is formed over the first insulating layer and first conductive layer. A via is formed through the repassivation layer to the first conductive layer. The semiconductor wafer is singulated to separate the semiconductor die. The semiconductor die is mounted to a temporary carrier. An encapsulant is deposited over the semiconductor die and carrier. The carrier is removed. A second insulating layer is formed over the repassivation layer and encapsulant. A second conductive layer is formed over the repassivation layer and first conductive layer. A third insulating layer is formed over the second conductive layer and second insulating layer. An interconnect structure is formed over the second conductive layer.

摘要翻译： 半导体晶片具有多个第一半导体管芯。 在模具的有效表面上形成第一导电层。 在有源表面和第一导电层上形成第一绝缘层。 在第一绝缘层和第一导电层上形成再钝化层。 通过再钝化层形成通孔至第一导电层。 单个半导体晶片以分离半导体管芯。 半导体管芯安装在临时载体上。 密封剂沉积在半导体管芯和载体上。 载体被移除。 在再钝化层和密封剂上形成第二绝缘层。 在再钝化层和第一导电层上形成第二导电层。 在第二导电层和第二绝缘层上形成第三绝缘层。 在第二导电层上形成互连结构。

公开(公告)号：US20110127668A1

公开(公告)日：2011-06-02

申请号：US12628631

申请日：2009-12-01

申请人： Yaojian Lin ,  Jianmin Fang ,  Kang Chen

发明人： Yaojian Lin ,  Jianmin Fang ,  Kang Chen

IPC分类号： H01L23/498 ,  H01L21/60 ,  H01L21/768

CPC分类号： H01L24/03 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/3185 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/05 ,  H01L24/13 ,  H01L24/14 ,  H01L24/29 ,  H01L24/48 ,  H01L2224/0231 ,  H01L2224/0233 ,  H01L2224/0239 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05111 ,  H01L2224/05155 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/1411 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83805 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15174 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2224/03 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor wafer has a first conductive layer formed over its active surface. A first insulating layer is formed over the substrate and first conductive layer. A second conductive layer is formed over the first conductive layer and first insulating layer. A UBM layer is formed around a bump formation area over the second conductive layer. The UBM layer can be two stacked metal layers or three stacked metal layers. The second conductive layer is exposed in the bump formation area. A second insulating layer is formed over the UBM layer and second conductive layer. A portion of the second insulating layer is removed over the bump formation area and a portion of the UBM layer. A bump is formed over the second conductive layer in the bump formation area. The bump contacts the UBM layer to seal a contact interface between the bump and second conductive layer.

摘要翻译： 半导体晶片具有在其有效表面上形成的第一导电层。 第一绝缘层形成在衬底和第一导电层上。 在第一导电层和第一绝缘层上形成第二导电层。 在第二导电层上方的凸块形成区域周围形成UBM层。 UBM层可以是两个堆叠的金属层或三个堆叠的金属层。 第二导电层暴露在凸块形成区域中。 在UBM层和第二导电层上形成第二绝缘层。 第二绝缘层的一部分在凸块形成区域和UBM层的一部分上被去除。 在凸块形成区域中的第二导电层上形成凸块。 凸块接触UBM层以密封凸点和第二导电层之间的接触界面。

公开(公告)号：US09679863B2

公开(公告)日：2017-06-13

申请号：US13243214

申请日：2011-09-23

申请人： Yaojian Lin ,  Jianmin Fang ,  Xia Feng ,  Kang Chen

发明人： Yaojian Lin ,  Jianmin Fang ,  Xia Feng ,  Kang Chen

IPC分类号： H01L23/48 ,  H01L23/00 ,  H01L21/56 ,  H01L25/10 ,  H01L25/00 ,  H01L23/498 ,  H01L23/538 ,  H01L23/31 ,  H01L21/683

CPC分类号： H01L23/562 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/11 ,  H01L24/13 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/81 ,  H01L24/82 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68304 ,  H01L2221/68331 ,  H01L2221/68359 ,  H01L2221/68377 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/16145 ,  H01L2224/16237 ,  H01L2224/2101 ,  H01L2224/211 ,  H01L2224/215 ,  H01L2224/24155 ,  H01L2224/245 ,  H01L2224/81815 ,  H01L2224/82005 ,  H01L2224/82101 ,  H01L2224/82106 ,  H01L2224/82986 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01028 ,  H01L2924/01079 ,  H01L2924/01047 ,  H01L2924/00014 ,  H01L2924/01082 ,  H01L2224/81 ,  H01L2224/82 ,  H01L2224/19 ,  H01L2224/11 ,  H01L2924/00012 ,  H01L2224/1146

摘要： A semiconductor device has a first encapsulant deposited over a first carrier. A plurality of conductive vias is formed through the first encapsulant to provide an interconnect substrate. A first semiconductor die is mounted over a second carrier. The interconnect substrate is mounted over the second carrier adjacent to the first semiconductor die. A second semiconductor die is mounted over the second carrier adjacent to the interconnect substrate. A second encapsulant is deposited over the first and second semiconductor die, interconnect substrate, and second carrier. A first interconnect structure is formed over a first surface of the second encapsulant and electrically connected to the conductive vias. A second interconnect structure is formed over a second surface of the second encapsulant and electrically connected to the conductive vias to make the Fo-WLCSP stackable. Additional semiconductor die can be mounted over the first and second semiconductor die in a PoP arrangement.

公开(公告)号：US08445990B2

公开(公告)日：2013-05-21

申请号：US12964810

申请日：2010-12-10

申请人： Yaojian Lin ,  Kang Chen ,  Jianmin Fang

发明人： Yaojian Lin ,  Kang Chen ,  Jianmin Fang

IPC分类号： H01L27/08

CPC分类号： H01L23/49822 ,  H01L21/568 ,  H01L23/49816 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/19 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05552 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/12105 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/20 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/181 ,  H01L2924/19042 ,  H01L2924/19104 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/00

摘要： A semiconductor device has an adhesive layer formed over a carrier. A semiconductor die has bumps formed over an active surface of the semiconductor die. The semiconductor die is mounted to the carrier with the bumps partially disposed in the adhesive layer to form a gap between the semiconductor die and adhesive layer. An encapsulant is deposited over the semiconductor die and within the gap between the semiconductor die and adhesive layer. The carrier and adhesive layer are removed to expose the bumps from the encapsulant. An insulating layer is formed over the encapsulant. A conductive layer is formed over the insulating layer in a wound configuration to exhibit inductive properties and electrically connected to the bumps. The conductive layer is partially disposed within a footprint of the semiconductor die. The conductive layer has a separation from the semiconductor die as determined by the gap and insulating layer.

摘要翻译： 半导体器件具有形成在载体上的粘合层。 半导体管芯具有在半导体管芯的有效表面上形成的凸块。 半导体管芯安装到载体上，凸起部分地设置在粘合剂层中，以在半导体管芯和粘合剂层之间形成间隙。 密封剂沉积在半导体管芯上并且在半导体管芯和粘合剂层之间的间隙内。 去除载体和粘合剂层以从密封剂露出凸块。 绝缘层形成在密封剂上。 导电层以缠绕构型形成在绝缘层上，以呈现电感性能并与凸点电连接。 导电层部分地设置在半导体管芯的覆盖区内。 由间隙和绝缘层确定的导电层具有与半导体管芯的分离。

公开(公告)号：US08409926B2

公开(公告)日：2013-04-02

申请号：US12720057

申请日：2010-03-09

申请人： Yaojian Lin ,  Kang Chen ,  Jianmin Fang ,  Xia Feng ,  Xusheng Bao

发明人： Yaojian Lin ,  Kang Chen ,  Jianmin Fang ,  Xia Feng ,  Xusheng Bao

IPC分类号： H01L23/28 ,  H01L21/56

CPC分类号： H01L23/544 ,  H01L21/561 ,  H01L21/568 ,  H01L21/78 ,  H01L23/28 ,  H01L23/29 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/11849 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14135 ,  H01L2224/221 ,  H01L2224/73265 ,  H01L2224/96 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2224/19 ,  H01L2924/00014 ,  H01L2924/00

摘要： A plurality of semiconductor die is mounted to a temporary carrier. An encapsulant is deposited over the semiconductor die and carrier. A portion of the encapsulant is designated as a saw street between the die, and a portion of the encapsulant is designated as a substrate edge around a perimeter of the encapsulant. The carrier is removed. A first insulating layer is formed over the die, saw street, and substrate edge. A first conductive layer is formed over the first insulating layer. A second insulating layer is formed over the first conductive layer and first insulating layer. The encapsulant is singulated through the first insulating layer and saw street to separate the semiconductor die. A channel or net pattern can be formed in the first insulating layer on opposing sides of the saw street, or the first insulating layer covers the entire saw street and molding area around the semiconductor die.

摘要翻译： 多个半导体管芯安装到临时载体上。 密封剂沉积在半导体管芯和载体上。 密封剂的一部分被指定为模具之间的锯道，并且密封剂的一部分被指定为围绕密封剂的周边的基底边缘。 载体被移除。 在模具，锯条和基板边缘上形成第一绝缘层。 在第一绝缘层上形成第一导电层。 在第一导电层和第一绝缘层上形成第二绝缘层。 通过第一绝缘层和锯条将密封剂分离，以分离半导体管芯。 可以在锯条的相对侧的第一绝缘层中形成通道或网状图案，或者第一绝缘层覆盖整个锯条和半导体管芯周围的成型区域。

公开(公告)号：US20120199965A1

公开(公告)日：2012-08-09

申请号：US13446664

申请日：2012-04-13

申请人： Yaojian Lin ,  Kang Chen ,  Jianmin Fang ,  Xia Feng

发明人： Yaojian Lin ,  Kang Chen ,  Jianmin Fang ,  Xia Feng

IPC分类号： H01L23/48

CPC分类号： H01L23/5389 ,  H01L21/31051 ,  H01L21/56 ,  H01L21/568 ,  H01L21/768 ,  H01L21/76802 ,  H01L21/78 ,  H01L23/3107 ,  H01L23/49816 ,  H01L24/19 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/94 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/00 ,  H01L2224/03

摘要： A semiconductor wafer contains a plurality of semiconductor die separated by a saw street. An insulating layer is formed over the semiconductor wafer. A protective layer is formed over the insulating layer including an edge of the semiconductor die along the saw street. The protective layer covers an entire surface of the semiconductor wafer. Alternatively, an opening is formed in the protective layer over the saw street. The insulating layer has a non-planar surface and the protective layer has a planar surface. The semiconductor wafer is singulated through the protective layer and saw street to separate the semiconductor die while protecting the edge of the semiconductor die. Leading with the protective layer, the semiconductor die is mounted to a carrier. An encapsulant is deposited over the semiconductor die and carrier. The carrier and protective layer are removed. A build-up interconnect structure is formed over the semiconductor die and encapsulant.

摘要翻译： 半导体晶片包含由锯条分隔开的多个半导体管芯。 在半导体晶片上形成绝缘层。 在绝缘层上形成保护层，该保护层包括沿着锯条的半导体管芯的边缘。 保护层覆盖半导体晶片的整个表面。 或者，在锯路上的保护层中形成开口。 绝缘层具有非平面表面，保护层具有平坦表面。 通过保护层和锯条将半导体晶片分离，以分离半导体管芯，同时保护半导体管芯的边缘。 与保护层一起，将半导体管芯安装到载体上。 密封剂沉积在半导体管芯和载体上。 去除载体和保护层。 在半导体管芯和密封剂上形成积层互连结构。