公开(公告)号：US09806041B1

公开(公告)日：2017-10-31

申请号：US15135586

申请日：2016-04-22

Applicant: Infineon Technologies AG

Inventor： Jens Peter Konrath ,  Jochen Hilsenbeck

IPC: H01L23/52 ,  H01L23/00

CPC classification number: H01L24/03 ,  B81C1/00 ,  H01L24/05 ,  H01L24/06 ,  H01L29/40 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/03612 ,  H01L2224/03614 ,  H01L2224/0381 ,  H01L2224/0383 ,  H01L2224/0391 ,  H01L2224/05017 ,  H01L2224/05025 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05582 ,  H01L2224/05601 ,  H01L2224/05613 ,  H01L2224/05624 ,  H01L2224/05638 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05663 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05673 ,  H01L2224/06181 ,  H01L2924/01029 ,  H01L2924/01014 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01076 ,  H01L2924/0108

Abstract: According to various embodiments, a method for processing an electronic component including at least one electrically conductive contact region may include: forming a contact pad including a self-segregating composition over the at least one electrically conductive contact region to electrically contact the electronic component; forming a segregation suppression structure between the contact pad and the electronic component, wherein the segregation suppression structure includes more nucleation inducing topography features than the at least one electrically conductive contact region for perturbing a chemical segregation of the self-segregating composition by crystallographic interfaces of the contact pad defined by the nucleation inducing topography features.

公开(公告)号：US20170309583A1

公开(公告)日：2017-10-26

申请号：US15135586

申请日：2016-04-22

Applicant: Infineon Technologies AG

Inventor： Jens Peter Konrath ,  Jochen Hilsenbeck

IPC: H01L23/00

CPC classification number: H01L24/03 ,  B81C1/00 ,  H01L24/05 ,  H01L24/06 ,  H01L29/40 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/03612 ,  H01L2224/03614 ,  H01L2224/0381 ,  H01L2224/0383 ,  H01L2224/0391 ,  H01L2224/05017 ,  H01L2224/05025 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05582 ,  H01L2224/05601 ,  H01L2224/05613 ,  H01L2224/05624 ,  H01L2224/05638 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05663 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05673 ,  H01L2224/06181 ,  H01L2924/01029 ,  H01L2924/01014 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01076 ,  H01L2924/0108

Abstract: According to various embodiments, a method for processing an electronic component including at least one electrically conductive contact region may include: forming a contact pad including a self-segregating composition over the at least one electrically conductive contact region to electrically contact the electronic component; forming a segregation suppression structure between the contact pad and the electronic component, wherein the segregation suppression structure includes more nucleation inducing topography features than the at least one electrically conductive contact region for perturbing a chemical segregation of the self-segregating composition by crystallographic interfaces of the contact pad defined by the nucleation inducing topography features.

公开(公告)号：US20170148754A1

公开(公告)日：2017-05-25

申请号：US15421737

申请日：2017-02-01

Applicant: GlobalFoundries Inc.

Inventor： Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  Wolfgang Sauter ,  Timothy D. Sullivan

IPC: H01L23/00 ,  H01L21/56 ,  H01L23/31

CPC classification number: H01L21/563 ,  H01L23/3121 ,  H01L23/3142 ,  H01L23/3192 ,  H01L23/49811 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/024 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05024 ,  H01L2224/05082 ,  H01L2224/05113 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/05613 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05686 ,  H01L2224/11912 ,  H01L2224/13023 ,  H01L2224/13076 ,  H01L2224/13078 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13113 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/13181 ,  H01L2224/13184 ,  H01L2224/13186 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2924/0132 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/07025 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/014

Abstract: Various embodiments include methods of forming interconnect structures, and the structures formed by such methods. In one embodiment, an interconnect structure can include: a photosensitive polyimide (PSPI) layer including a pedestal portion; a controlled collapse chip connection (C4) bump overlying the pedestal portion of the PSPI layer; a solder overlying the C4 bump and contacting a side of the C4 bump; and an underfill layer abutting the pedestal portion of the PSPI and the C4 bump, wherein the underfill layer and the solder form a first interface separated from the PSPI pedestal.

公开(公告)号：US09607862B2

公开(公告)日：2017-03-28

申请号：US13610262

申请日：2012-09-11

Applicant: Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  Wolfgang Sauter ,  Timothy D. Sullivan

Inventor： Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  Wolfgang Sauter ,  Timothy D. Sullivan

IPC: H01L21/306 ,  H01L23/498 ,  H01L21/56 ,  H01L23/31 ,  H01L23/00

CPC classification number: H01L21/563 ,  H01L23/3121 ,  H01L23/3142 ,  H01L23/3192 ,  H01L23/49811 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/024 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05024 ,  H01L2224/05082 ,  H01L2224/05113 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/05613 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05686 ,  H01L2224/11912 ,  H01L2224/13023 ,  H01L2224/13076 ,  H01L2224/13078 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13113 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/13181 ,  H01L2224/13184 ,  H01L2224/13186 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2924/0132 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/07025 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/014

Abstract: Various embodiments include methods of forming interconnect structures, and the structures formed by such methods. In one embodiment, a method can include: providing a precursor interconnect structure having: a photosensitive polyimide (PSPI) layer; a controlled collapse chip connection (C4) bump overlying the PSPI layer; and a solder overlying the C4 bump and contacting a side of the C4 bump. The method can further include recessing a portion of the PSPI layer adjacent to the C4 bump to form a PSPI pedestal under the C4 bump. The method can additionally include forming an underfill abutting the PSPI pedestal and the C4 bump, wherein the underfill and the solder form an interface separated from the PSPI pedestal.

公开(公告)号：US09368482B2

公开(公告)日：2016-06-14

申请号：US14935105

申请日：2015-11-06

Applicant: SK hynix Inc.

Inventor： Jong Hoon Kim ,  Han Jun Bae

IPC: H01L23/48 ,  H01L25/065 ,  H01L25/00 ,  H01L23/00 ,  H01L23/31 ,  H01L25/18

CPC classification number: H01L25/0657 ,  H01L23/3128 ,  H01L23/3171 ,  H01L23/481 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0652 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/0557 ,  H01L2224/05605 ,  H01L2224/05609 ,  H01L2224/05611 ,  H01L2224/05613 ,  H01L2224/05616 ,  H01L2224/05618 ,  H01L2224/05623 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/11462 ,  H01L2224/13016 ,  H01L2224/13017 ,  H01L2224/13147 ,  H01L2224/16146 ,  H01L2224/16147 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2224/81203 ,  H01L2224/81898 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/15311 ,  H01L2224/81

Abstract: Stack packages are provided. The stack package includes a first chip configured to include a first chip body having a top surface and a bottom surface, first through electrodes penetrating the first chip body, and an insulation layer disposed on the bottom surface of the first chip body, and first bumps disposed on the top surface of the first chip body, and a second chip configured to include a second chip body having a top surface and a bottom surface, and second bumps disposed on the top surface of the second chip body. The first and second chips are vertically stacked such that the top surface of the second chip body is directly attached to the first insulation layer and the second bumps of the second chip penetrate the first insulation layer of the first chip to pierce the first through electrodes of the first chip.

Abstract translation: 提供堆栈包。 堆叠封装包括第一芯片，其构造成包括具有顶表面和底表面的第一芯片主体，第一穿透电极穿过第一芯片主体的绝缘层，以及设置在第一芯片主体的底表面上的绝缘层， 设置在第一芯片主体的上表面上，第二芯片构造成包括具有顶表面和底表面的第二芯片主体，以及设置在第二芯片主体的顶表面上的第二凸块。 第一芯片和第二芯片被垂直堆叠，使得第二芯片主体的顶表面直接附接到第一绝缘层，并且第二芯片的第二凸块穿透第一芯片的第一绝缘层以刺穿第一芯片主体的第一穿透电极 第一个芯片。

公开(公告)号：US20150214181A1

公开(公告)日：2015-07-30

申请号：US14681149

申请日：2015-04-08

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Jung Wei CHENG ,  Tsung-Ding WANG ,  Chien-Hsun LEE ,  Chun-Chih CHUANG

IPC: H01L23/00 ,  H01L21/56

CPC classification number: H01L24/81 ,  H01L21/56 ,  H01L23/3114 ,  H01L23/3121 ,  H01L23/49811 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L24/48 ,  H01L24/85 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05557 ,  H01L2224/05571 ,  H01L2224/05611 ,  H01L2224/05613 ,  H01L2224/05616 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/06155 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/81192 ,  H01L2224/85 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06568 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/014 ,  H01L2224/05552 ,  H01L2924/00012

Abstract: A method of forming a semiconductor device package includes bonding a first connector to a first conductive structure on a first package. The method includes bonding a die to a surface of the first package, wherein a top surface of the first connector extends above a top surface of the die. The method includes surrounding the first connector with a molding compound. The method includes removing a portion of the first connector and a portion of the molding compound. The top surface of the remaining first conductor is below the top surface of the die. A first top surface of the remaining molding compound is below the top surface of the die. A second top surface of the remaining molding compound is level with the top surface of the die. The method includes bonding a second connector to the remaining portion of the first connector.

Abstract translation: 形成半导体器件封装的方法包括将第一连接器接合到第一封装上的第一导电结构。 该方法包括将管芯结合到第一封装的表面，其中第一连接器的顶表面在模具的顶表面上方延伸。 该方法包括用模塑料包围第一连接器。 该方法包括去除第一连接器的一部分和模制化合物的一部分。 剩余的第一导体的顶表面在模具的顶表面之下。 剩余的模塑料的第一顶表面在模头的顶表面之下。 剩余模塑料的第二顶表面与模具的顶表面平齐。 该方法包括将第二连接器连接到第一连接器的剩余部分。

公开(公告)号：US08928134B2

公开(公告)日：2015-01-06

申请号：US13916243

申请日：2013-06-12

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Kuei-Wei Huang ,  Wei-Yu Chen ,  Meng-Tse Chen ,  Wei-Hung Lin ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/538 ,  H01L23/31 ,  H01L21/56 ,  H01L23/48

CPC classification number: H01L25/105 ,  H01L21/4853 ,  H01L21/561 ,  H01L21/563 ,  H01L23/3135 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/538 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/73 ,  H01L24/81 ,  H01L24/94 ,  H01L24/97 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05147 ,  H01L2224/05557 ,  H01L2224/056 ,  H01L2224/05611 ,  H01L2224/05613 ,  H01L2224/05616 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05684 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13564 ,  H01L2224/136 ,  H01L2224/1403 ,  H01L2224/14181 ,  H01L2224/16058 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/1705 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81007 ,  H01L2224/81193 ,  H01L2224/831 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/01083 ,  H01L2924/00014

Abstract: The described embodiments of mechanisms of forming a die package and package on package (PoP) structure involve forming a solder paste layer over metal balls of external connectors of a die package. The solder paste layer protects the metal balls from oxidation. In addition, the solder paste layer enables solder to solder bonding with another die package. Further, the solder paste layer moves an intermetallic compound (IMC) layer formed between the solder paste layer and the metal balls below a surface of a molding compound of the die package. Having the IMC layer below the surface strengthens the bonding structure between the two die packages.

Abstract translation: 形成模具封装和封装（PoP）结构的机构的所述实施例涉及在管芯封装的外部连接器的金属球上形成焊膏层。 焊膏层保护金属球免受氧化。 此外，焊膏层能够使焊料与另一个管芯封装焊接。 此外，焊膏层将形成在焊膏层和金属球之间的金属间化合物（IMC）层移动到模具封装的模塑料的表面下方。 使表面下方的IMC层增强了两个管芯封装之间的结合结构。

公开(公告)号：US20140070401A1

公开(公告)日：2014-03-13

申请号：US13610262

申请日：2012-09-11

Applicant: Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  Wolfgang Sauter ,  Timothy D. Sullivan

Inventor： Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  Wolfgang Sauter ,  Timothy D. Sullivan

IPC: H01L21/306 ,  H01L23/498

CPC classification number: H01L21/563 ,  H01L23/3121 ,  H01L23/3142 ,  H01L23/3192 ,  H01L23/49811 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/024 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05024 ,  H01L2224/05082 ,  H01L2224/05113 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/05613 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05686 ,  H01L2224/11912 ,  H01L2224/13023 ,  H01L2224/13076 ,  H01L2224/13078 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13113 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/13181 ,  H01L2224/13184 ,  H01L2224/13186 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2924/0132 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/07025 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/014

Abstract: Various embodiments include methods of forming interconnect structures, and the structures formed by such methods. In one embodiment, a method can include: providing a precursor interconnect structure having: a photosensitive polyimide (PSPI) layer; a controlled collapse chip connection (C4) bump overlying the PSPI layer; and a solder overlying the C4 bump and contacting a side of the C4 bump. The method can further include recessing a portion of the PSPI layer adjacent to the C4 bump to form a PSPI pedestal under the C4 bump. The method can additionally include forming an underfill abutting the PSPI pedestal and the C4 bump, wherein the underfill and the solder form an interface separated from the PSPI pedestal.

Abstract translation: 各种实施方案包括形成互连结构的方法以及通过这些方法形成的结构。 在一个实施例中，一种方法可以包括：提供具有：光敏聚酰亚胺（PSPI）层的前体互连结构; 一个控制崩溃芯片连接（C4）凸起覆盖PSPI层; 以及覆盖C4凸块并且接触C4凸块的一侧的焊料。 该方法还可以包括使与C4凸起相邻的PSPI层的一部分凹陷以在C4凸起下形成PSPI基座。 该方法还可以包括形成邻接PSPI基座和C4凸块的底部填充物，其中底部填充物和焊料形成与PSPI基座分离的界面。

公开(公告)号：US20120217650A1

公开(公告)日：2012-08-30

申请号：US13403338

申请日：2012-02-23

Applicant: Hideo IMAI

Inventor： Hideo IMAI

IPC: H01L23/538

CPC classification number: H01L23/481 ,  H01L21/76898 ,  H01L23/562 ,  H01L25/0657 ,  H01L25/074 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05553 ,  H01L2224/05567 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05609 ,  H01L2224/05611 ,  H01L2224/05613 ,  H01L2224/05616 ,  H01L2224/05618 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/06181 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/13007 ,  H01L2224/13017 ,  H01L2224/13022 ,  H01L2224/13144 ,  H01L2224/16146 ,  H01L2224/16147 ,  H01L2224/16237 ,  H01L2224/8114 ,  H01L2224/81191 ,  H01L2224/81895 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/01327 ,  H01L2924/00

Abstract: A first substrate with a penetration electrode formed thereon is stacked on a second substrate with a protruding electrode formed thereon. The penetration electrode has a recessed portion. The substrates are stacked with the protruding electrode entered in the recessed portion. A distal width of the protruding electrode is smaller than an opening width of the recessed portion.

Abstract translation: 在其上形成有穿透电极的第一基板层叠在其上形成有突出电极的第二基板上。 穿透电极具有凹部。 基板被突出电极堆叠在凹入部分中。 突出电极的前端宽度小于凹部的开口宽度。

公开(公告)号：US20120181688A1

公开(公告)日：2012-07-19

申请号：US13355311

申请日：2012-01-20

Applicant: Shih-Ping Hsu

Inventor： Shih-Ping Hsu

IPC: H01L23/498

CPC classification number: H01L24/00 ,  H01L23/498 ,  H01L23/49811 ,  H01L23/49816 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05609 ,  H01L2224/05611 ,  H01L2224/05613 ,  H01L2224/05616 ,  H01L2224/05618 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11825 ,  H01L2224/11849 ,  H01L2224/11903 ,  H01L2224/13006 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13171 ,  H01L2224/13562 ,  H01L2224/13565 ,  H01L2224/136 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/14 ,  H01L2924/351 ,  H05K1/0271 ,  H05K3/243 ,  H05K3/3452 ,  H05K3/3473 ,  H05K3/4007 ,  H05K2201/0341 ,  H05K2201/0367 ,  H05K2201/099 ,  H05K2203/054 ,  H01L2924/014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552

Abstract: A packaging substrate with conductive structure is provided, including a substrate body having at least one conductive pad on a surface thereof, a stress buffer metal layer disposed on the conductive pad and a thickness of the stress buffer metal layer being 1-20 μm, a solder resist layer disposed on the substrate body and having at least one opening therein for correspondingly exposing a portion of top surface of the stress buffer metal layer, a metal post disposed on a central portion of the surface of the stress buffer metal layer, and a solder bump covering the surfaces of the metal post. Therefore, a highly reliable conductive structure is provided, by using the stress buffer metal layer to release thermal stresses, and using the metal post and the solder bump to increase the height of the conductive structure.

Abstract translation: 提供一种具有导电结构的封装基板，包括其表面上具有至少一个导电焊盘的基板主体，设置在导电焊盘上的应力缓冲金属层，应力缓冲金属层的厚度为1-20μm， 防焊层设置在基板主体上并且在其中具有至少一个开口，用于相应地暴露应力缓冲金属层的顶表面的一部分，设置在应力缓冲金属层的表面的中心部分上的金属柱，以及 焊料凸块覆盖金属柱的表面。 因此，通过使用应力缓冲金属层来释放热应力，并且使用金属柱和焊料凸块来增加导电结构的高度，提供了高度可靠的导电结构。