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公开(公告)号：US11808828B2
公开(公告)日：2023-11-07
申请号：US17201016
申请日：2021-03-15
Inventor： Xiufeng Han , Yaowen Xing
CPC classification number: G01R33/093 , G01R33/095 , H01F10/193 , H01F10/325 , H01F10/3254 , H10N50/10 , H10N50/85 , G01R33/0052
Abstract: The present disclosure relates to a magnonic magnetoresistance (MMR) device and an electronic equipment including the same. According to one embodiment, a core structure of a MMR device may include: a first ferromagnetic insulating layer (Ferro-magnetic Insulator, FMI1); a two-dimensional conductive material layer (Spacer) set on the first ferromagnetic insulating layer; and a second ferromagnetic insulating layer (Ferro-magnetic Insulator, FMI2) set on the two-dimensional conductive material layer. The MMR device of the present disclosure may enhance interface effect in spin electron transmission and thus improve performance of the MMR device.
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公开(公告)号：US11362327B2
公开(公告)日：2022-06-14
申请号：US16500070
申请日：2017-09-05
Inventor： Zhou Jin , Hailong Yu , Xuejie Huang
Abstract: This invention relates to a double layer composite-coated nano-silicon negative electrode material, and its preparation methods and use, the negative electrode material comprising: a silicon-based nanoparticle, a copper layer coated on the surface of the silicon-based nanoparticle, and a conductive protective layer coated on the surface of the copper layer. Nano-copper has superplastic ductility and conductivity, and the prior art has proved that lithium ions can penetrate nano-copper; therefore, the copper coating layer has effects of inhibiting the volume expansion of the silicon-based nanoparticle and keeping the silicon-based nanoparticle from cracking so that direct contact between the silicon-based nanoparticle and an electrolyte is effectively avoided and a stable SEI is formed, and increasing the conductivity of the electrode. The surface of the nano-copper is coated with a further conductive protective layer to effectively inhibit the oxidation of the nano-copper, thereby improving the electrochemical performance.
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公开(公告)号：US20220020909A1
公开(公告)日：2022-01-20
申请号：US17299779
申请日：2019-02-22
Inventor： Huaizhou Zhao , Jiawei Yang , Siyi Chang , Junling Gao
Abstract: Provided by the present invention is a magnesium-antimony-based (Mg—Sb-based) thermoelenient, preparation method and application thereof. The Mg—Sb-based. thermoelement comprises: a substrate layer of a Mg—Sb-based. thermoelectric material positioned in the center of the thermoelement, transitional layers that are attached to the two surfaces of the substrate layer, and two electrode layer that are respectively attached to the surfaces of the two transitional layers; the transitional layers are made of a magnesium-copper alloy and/or magnesium-aluminum alloy, and the electrode layer is made of copper. The transitional layer and the electrode layer which are developed in the present invention and which are suitable for a Mg—Sb-based thermoelectric material have great significance and prospects in application. The electrode layer enable the Mg—Sb-based thermoelectric material to have an opportunity to enter the market and realize commercialization. Compared with the existing bismuth telluride thermoelectric devices in the market, the thermoelectric device prepared has lower costs, may simultaneously save the rare element tellurium, and is beneficial in saving energy and protecting the environmental.
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公开(公告)号：US20190334018A1
公开(公告)日：2019-10-31
申请号：US16471391
申请日：2017-03-23
Inventor： Yonghui ZHANG , Zengxia MEI , Huili LIANG , Xiaolong DU
IPC: H01L29/66 , H01L29/49 , H01L21/027 , H01L29/423 , H01L29/786 , H01L21/445 , H01L21/02 , H01L29/45 , H01L29/24 , H01L29/22
Abstract: The present invention provides a preparation method for a fully-transparent thin film transistor, wherein a transparent conductive gate electrode layer of the fully-transparent thin film transistor is used as a photolithographic mask, a photoresist is exposed through a rear surface of a transparent substrate, the transparent substrate has a transmittance higher than 60% to an exposure light beam, and the transparent conductive gate electrode layer has a transmittance lower than 5% to the exposure light beam. In the preparation method for a fully-transparent thin film transistor provided by the present invention, by using a self-aligned technology, the process complexity and the feature size of the device can both be reduced.
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公开(公告)号：US10279391B2
公开(公告)日：2019-05-07
申请号：US14983725
申请日：2015-12-30
Inventor： Enke Liu , Zhiyang Wei , Wenhong Wang , Xuekui Xi , Jinglan Chen , Guangheng Wu
IPC: B22D27/04 , B22D21/00 , B22D25/06 , C21D1/84 , C22C1/02 , C22C19/03 , C22C30/00 , C22F1/10 , C22F1/16 , H01F1/03 , H01L41/20
Abstract: A magnetic phase-transformation material with the formula Nia−mMnb−nCom+nTic is provided, wherein a+b+c=100, 20
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Patent Agency Ranking
公开(公告)号：US20190056429A1
公开(公告)日：2019-02-21
申请号：US16102833
申请日：2018-08-14
Inventor： Qing Huan , Zebin Wu , Hongjun Gao
Abstract: A scanning head of a scanning probe microscope includes a scanning head frame having a first end portion and a second end portion which are oppositely disposed, the first end portion and the second end portion defining a first receiving space and a second receiving space, respectively; a sample table located in the first receiving space; a scanning module located in the second receiving space; and a plurality of fixed electrodes fixed on the second end portion of the scanning head frame. Signal lines of the scanning head of the present invention do not fall off or tear off during operation. In addition, the scanning head allows a laser to be incident on its scanning probe, enabling the scanning probe to be coupled with the laser, so that the range of application is wide.
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公开(公告)号：US10153425B2
公开(公告)日：2018-12-11
申请号：US15256262
申请日：2016-09-02
Inventor： Xiufeng Han , Caihua Wan , Xuan Zhang
Abstract: The present invention relates to a spin logic device and an electronic equipment comprising the same. A spin logic device may include a Spin Hall effect (SHE) layer formed of a conductive material having Spin Hall effect and configured to receive a first logic input current and a second logic input current, the first logic input current and the second logic input current both being an in-plane current, a magnetic tunnel junction provided on the SHE layer comprising a free magnetic layer in contact with the SHE layer, a barrier layer disposed on the free magnetic layer, and a reference magnetic layer disposed on the barrier layer, and a current wiring in connection to the reference magnetic layer side of the magnetic tunnel junction, the current wiring being in cooperation with the SHE layer to apply a read current passing through the magnetic tunnel junction therebetween.
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公开(公告)号：US09640363B2
公开(公告)日：2017-05-02
申请号：US15282028
申请日：2016-09-30
Inventor： Guoqiang Yu , Peng Guo , Xiufeng Han , Chaohui Guo , Xiaoyu Sun , Xiangqian Zhou
CPC classification number: H01J37/09 , G01R33/093 , G01R33/096 , H01F7/202 , H01F7/204 , H01F41/00 , H01J37/141 , H01J2237/0262 , H01J2237/0264 , H01J2237/28 , H01J2237/31754 , H01L43/12
Abstract: A nano-patterned system comprises a vacuum chamber, a sample stage and a magnetic-field applying device, which comprises a power supply, a magnetic-field generation device and a pair of magnetic poles. The magnetic-field generation device comprises a coil and a magnetic conductive soft iron core. The power supply is connected to the coil, which is wound on the soft iron core to generate a magnetic field. The soft iron core is of a semi-closed frame structure and the magnetic poles are at the ends of the frame structure. The stage is inside a vacuum chamber. The poles are oppositely arranged inside the vacuum chamber relative to the stage. The coil and the soft iron core are outside the vacuum chamber. The soft iron core leads the magnetic field generated by the coil into the vacuum chamber. The magnetic poles locate a sample on the stage and apply a local magnetic field.
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公开(公告)号：US20170012076A1
公开(公告)日：2017-01-12
申请号：US15058836
申请日：2016-03-02
Inventor： Hong Chen , Lu Wang , Haiqiang Jia , Ziguang Ma , Yang Jiang , Wenxin Wang
IPC: H01L27/146 , H01L31/0304 , H01L31/109 , H01L31/0352
CPC classification number: H01L27/14652 , H01L27/14694 , H01L31/035218 , H01L31/035236 , H01L31/105
Abstract: The present application relates to a photodetector based on interband transition in quantum wells. The photodetector may include a first semiconductor layer having a first conduction type; a second semiconductor layer having a second conduction type different from the first conduction type; and a photon absorption layer arranged between the first semiconductor layer and the second semiconductor layer, the photon absorption layer including at least one quantum well layer and barrier layers arranged on both sides of each quantum well layer. The present application utilizes the modulating effect of a semiconductor PN junction on a photoelectric conversion process associated with quantum wells to significantly increase a current output of the photodetector based on the quantum well material.
Abstract translation: 本申请涉及一种基于量子阱中的带间跃迁的光电探测器。 光电检测器可以包括具有第一导电类型的第一半导体层; 具有不同于第一导电类型的第二导电类型的第二半导体层; 以及布置在所述第一半导体层和所述第二半导体层之间的光子吸收层，所述光子吸收层包括布置在每个量子阱层两侧的至少一个量子阱层和阻挡层。 本申请利用半导体PN结对与量子阱相关联的光电转换处理的调制效应，以显着增加基于量子阱材料的光电检测器的电流输出。
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40.发明申请公开(公告)号：US20160254117A1
公开(公告)日：2016-09-01
申请号：US14395765
申请日：2014-05-06
Inventor： Jianqi LI , Huanfang TIAN , Gaolong CAO , Chao MA , Huaixin YANG
CPC classification number: H01J37/06 , H01J37/073 , H01J37/26 , H01J37/28 , H01J37/3178 , H01J2237/2802
Abstract: The present invention discloses a multifunctional ultrafast electron gun of a transmission electron microscopy. The ultrafast electron gun of a transmission electron microscope comprises: a laser source, an electron gun body and a laser introducing module. The electron gun body comprises: an electron gun sleeve comprising a first section sleeve and a second section sleeve; and, a cathode, an acceleration electrode and an anode arranged in up-down order, wherein the cathode and the acceleration electrode are located within the first section sleeve and the anode is located within the second section sleeve. The laser introducing module includes an introducing module sleeve sealedly connected between the first section sleeve and the second section sleeve and provided with a laser incoming window in a side thereof; and a laser reflective mirror located in the introducing module sleeve, which is configured to face right the laser incoming window and configured adjacent to a central axis of the introducing module sleeve, and the reflective face of which is configured to make an angle of 45° with the central axis of the introducing module sleeve. The multifunctional ultrafast electron gun. of a transmission electron microscopy according to the present invention achieve the best coherence performance of the electrons obtained in the case of the photoelectron emission compared with those in the prior art.
Abstract translation: 本发明公开了一种透射电子显微镜的多功能超快电子枪。 透射电子显微镜的超快电子枪包括：激光源，电子枪体和激光引入模块。 电子枪主体包括：电子枪套筒，包括第一部分套筒和第二部分套筒; 阴极，加速电极和阳极，其以上下顺序排列，其中阴极和加速电极位于第一部分套筒内，阳极位于第二部分套筒内。 激光引入模块包括密封地连接在第一部分套筒和第二部分套筒之间并在其侧面设置有激光进入窗口的引导模块套筒; 以及位于所述引导模块套筒中的激光反射镜，所述激光反射镜被配置为面对所述激光入射窗口的右侧并且被配置成与所述引入模块套筒的中心轴线相邻，并且其反射面被配置为形成45°的角度 与引入模块套筒的中心轴线。 多功能超快电子枪。 根据本发明的透射电子显微镜与现有技术相比，获得了在光电子发射的情况下获得的电子的最佳相干性能。
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