公开(公告)号：US20170012076A1

公开(公告)日：2017-01-12

申请号：US15058836

申请日：2016-03-02

Applicant: INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES

Inventor： Hong Chen ,  Lu Wang ,  Haiqiang Jia ,  Ziguang Ma ,  Yang Jiang ,  Wenxin Wang

IPC: H01L27/146 ,  H01L31/0304 ,  H01L31/109 ,  H01L31/0352

CPC classification number: H01L27/14652 ,  H01L27/14694 ,  H01L31/035218 ,  H01L31/035236 ,  H01L31/105

Abstract: The present application relates to a photodetector based on interband transition in quantum wells. The photodetector may include a first semiconductor layer having a first conduction type; a second semiconductor layer having a second conduction type different from the first conduction type; and a photon absorption layer arranged between the first semiconductor layer and the second semiconductor layer, the photon absorption layer including at least one quantum well layer and barrier layers arranged on both sides of each quantum well layer. The present application utilizes the modulating effect of a semiconductor PN junction on a photoelectric conversion process associated with quantum wells to significantly increase a current output of the photodetector based on the quantum well material.

Abstract translation: 本申请涉及一种基于量子阱中的带间跃迁的光电探测器。 光电检测器可以包括具有第一导电类型的第一半导体层; 具有不同于第一导电类型的第二导电类型的第二半导体层; 以及布置在所述第一半导体层和所述第二半导体层之间的光子吸收层，所述光子吸收层包括布置在每个量子阱层两侧的至少一个量子阱层和阻挡层。 本申请利用半导体PN结对与量子阱相关联的光电转换处理的调制效应，以显着增加基于量子阱材料的光电检测器的电流输出。