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1.发明公开公开(公告)号：US20230317942A1
公开(公告)日：2023-10-05
申请号：US18318375
申请日：2023-05-16
Inventor： Yida WU , Xuejie Huang , Yuanjie Zhan , Xiaowei Ma
CPC classification number: H01M4/525 , H01M4/0404 , H01M4/0471 , H01M4/366 , H01M4/505 , H01M10/0525 , H01M2004/021 , H01M2004/028
Abstract: The present application discloses a positive electrode active material, comprising a lithium nickel manganese oxide modified material and a coating layer on the surface of the lithium nickel manganese oxide modified material. The lithium nickel manganese oxide modified material is a primary particle with a core-shell-like structure comprising a spinel phase and a rocksalt-like structure phase. The spinel phase is an inner core, and the rocksalt-like structure phase constitutes an outer shell. The rocksalt-like structure phase is further doped with a phosphorus element and the phosphorus element is distributed in a gradient from the outer surface to the interior of the rocksalt-like structure phase. The present application further discloses a preparation method of the positive electrode active material, a positive electrode containing the positive electrode active material for lithium-ion secondary batteries, and a lithium ion secondary battery.
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公开(公告)号：US20230133537A1
公开(公告)日：2023-05-04
申请号：US17905857
申请日：2021-01-18
Inventor： Mengyu Tian , Wenbin Qi , Hailong Yu , Xuejie Huang
Abstract: Provided is a prelithiation material, comprising a lithium-containing compound and an inorganic non-metallic reductive agent. Further provided is a method for preparing the prelithiation material of the present invention. Further provided is use of the prelithiation material of the present invention in a lithium ion battery. By mixing the prelithiation material provided by the present invention with a positive electrode material or coating the side of a separator near the positive electrode with the same, a battery is assembled, and during first cycle, active lithium can be released so as to compensate active lithium lost from a negative electrode. The prelithiation material provided by the present invention has a good compatibility with currently commercially available positive and negative electrodes, and is very suitable for current secondary lithium ion batteries.
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3.发明授权公开(公告)号：US11362328B2
公开(公告)日：2022-06-14
申请号：US16631752
申请日：2018-09-29
Inventor： Zhou Jin , Hailong Yu , Xuejie Huang
IPC: H01M4/38 , H01M4/04 , H01M4/36 , H01M10/0525 , H01M4/02
Abstract: The invention provides a composite-coated nano-tin negative electrode material, which comprises a tin-based nanomaterial, a nano-copper layer coated on the surface of the tin-based nanomaterial and a conductive protective layer coated on the surface of the nano-copper layer. The nano-copper layer can inhibit the volume expansion of nano-tin, keep the nano-tin material from cracking, avoid direct contact between nano-tin and electrolyte to form stable SEI and increase the conductivity of the electrode. Coating a conductive layer on the surface of the nano-copper layer can effectively inhibit the oxidation of nano-copper, thus improving its electrochemical performance. The composite-coated nano-tin negative electrode material according to the invention is used as a negative electrode material of a lithium-ion battery, has excellent electrochemical performance, and has potential application prospects in portable mobile devices and electric vehicles.
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公开(公告)号：US20210293908A1
公开(公告)日：2021-09-23
申请号：US17201016
申请日：2021-03-15
Inventor： Xiufeng HAN , Yaowen XING
Abstract: The present disclosure relates to a magnonic magnetoresistance (MMR) device and an electronic equipment including the same. According to one embodiment, a core structure of a MMR device may include: a first ferromagnetic insulating layer (Ferro-magnetic Insulator, FMI1); a two-dimensional conductive material layer (Spacer) set on the first ferromagnetic insulating layer; and a second ferromagnetic insulating layer (Ferro-magnetic Insulator, FMI2) set on the two-dimensional conductive material layer. The MMR device of the present disclosure may enhance interface effect in spin electron transmission and thus improve performance of the MMR device.
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公开(公告)号：US20210043829A1
公开(公告)日：2021-02-11
申请号：US17079422
申请日：2020-10-24
Inventor： Xiufeng HAN , Ping TANG , Chenyang GUO , Caihua WAN
Abstract: The present disclosure relates to a magnon spin valve device, a magnon sensor, a magnon field effect transistor, a magnon tunnel junction and a magnon memory. A magnon spin valve device may comprise a first ferromagnetic insulation layer, a non-magnetic conductive layer disposed on the first ferromagnetic insulation layer, and a second ferromagnetic insulation layer disposed on the non-magnetic conductive layer.
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Patent Agency Ranking
公开(公告)号：US10749016B2
公开(公告)日：2020-08-18
申请号：US16471391
申请日：2017-03-23
Inventor： Yonghui Zhang , Zengxia Mei , Huili Liang , Xiaolong Du
IPC: H01L29/66 , H01L21/02 , H01L21/027 , H01L21/445 , H01L29/22 , H01L29/24 , H01L29/423 , H01L29/45 , H01L29/49 , H01L29/786
Abstract: The present invention provides a preparation method for a fully-transparent thin film transistor, wherein a transparent conductive gate electrode layer of the fully-transparent thin film transistor is used as a photolithographic mask, a photoresist is exposed through a rear surface of a transparent substrate, the transparent substrate has a transmittance higher than 60% to an exposure light beam, and the transparent conductive gate electrode layer has a transmittance lower than 5% to the exposure light beam. In the preparation method for a fully-transparent thin film transistor provided by the present invention, by using a self-aligned technology, the process complexity and the feature size of the device can both be reduced.
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7.发明授权Nanometer magnetic multilayer film for temperature sensor and manufacturing method therefor 有权用于温度传感器的纳米磁性多层膜及其制造方法公开(公告)号：US09484527B2
公开(公告)日：2016-11-01
申请号：US15046911
申请日：2016-02-18
Inventor： Xiufeng Han , Zhonghui Yuan , Pan Liu , Guoqiang Yu , Jiafeng Feng , Dianlin Zhang
Abstract: A magnetic multilayer film for a temperature sensor is disclosed. The magnetic multilayer film comprises: a bottom magnetic composite layer provided on a substrate, the bottom magnetic composite layer having a direct pinning structure, an indirect pinning structure, a synthetic ferromagnetic structure, or a synthetic anti-ferromagnetic structure; a spacer layer provided on the bottom magnetic composite layer; and a top magnetic composite layer provided on the spacer layer, the top magnetic composite layer having the direct pinning structure, the indirect pinning structure, the synthetic ferromagnetic structure, or the synthetic anti-ferromagnetic structure, wherein a ferromagnetic layer of the bottom magnetic composite layer closest to the spacer layer has a magnetic moment anti-parallel with that of a ferromagnetic layer of the top magnetic composite layer closest to the spacer layer.
Abstract translation: 公开了一种用于温度传感器的磁性多层膜。 磁性多层膜包括：设置在基板上的底部磁性复合层，底部磁性复合层具有直接钉扎结构，间接钉扎结构，合成铁磁结构或合成反铁磁结构; 设置在底部磁性复合层上的间隔层; 以及设置在间隔层上的顶部磁性复合层，具有直接钉扎结构的顶部磁性复合层，间接钉扎结构，合成铁磁结构或合成反铁磁结构，其中底部磁性复合材料的铁磁层 最靠近间隔层的层具有与最靠近间隔层的顶部磁性复合层的铁磁层的磁矩反平行的磁矩。
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公开(公告)号：US09461233B2
公开(公告)日：2016-10-04
申请号：US14316822
申请日：2014-06-27
Inventor： Qi-Kun Xue , Xu-Cun Ma , Li-Li Wang , Xi Chen , Jin-Feng Jia , Ke He , Shuai-Hua Ji , Wen-Hao Zhang , Qing-Yan Wang , Zhi Li
CPC classification number: H01L39/12 , H01B12/06 , H01B13/0036 , H01L39/14
Abstract: A high-temperature superconducting film includes a SrTiO3 substrate, a single crystalline FeSe layer, and a protective layer with a layered crystal structure. The single crystalline FeSe layer is sandwiched between the SrTiO3 substrate and the protective layer via a layer-by-layer mode. An onset temperature of superconducting transition of the high-temperature superconducting film is greater than or equal to 54 K, and a critical current density of the high-temperature superconducting film is about 106 A/cm2 at 12 K.
Abstract translation: 高温超导膜包括SrTiO 3基板，单晶FeSe层和具有层状晶体结构的保护层。 单晶FeSe层通过逐层模式夹在SrTiO3衬底和保护层之间。 高温超导膜的超导转变的起始温度大于或等于54K，高温超导膜的临界电流密度在12K时约为106A / cm2。
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公开(公告)号：US20160256923A1
公开(公告)日：2016-09-08
申请号：US14983725
申请日：2015-12-30
Inventor： Enke Liu , Zhiyang Wei , Wenhong Wang , Xuekui Xi , Jinglan Chen , Guangheng Wu
IPC: B22D27/04 , C22C30/00 , C22C1/02 , B22D21/00 , C22F1/16 , C21D1/84 , B22D25/06 , C22C19/03 , C22F1/10
CPC classification number: B22D27/045 , B22D21/005 , B22D25/06 , C21D1/84 , C22C1/023 , C22C19/03 , C22C30/00 , C22F1/10 , C22F1/16 , H01F1/0308 , H01L41/20
Abstract: A magnetic phase-transformation material with the formula Nia−mMnb−nCom+nTic is provided, wherein a+b+c=100, 20
Abstract translation: 提供了具有式Nia-mMnb-nCom + nTic的磁相变材料，其中a + b + c = 100,20
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公开(公告)号：US09425375B2
公开(公告)日：2016-08-23
申请号：US14316823
申请日：2014-06-27
Inventor： Qi-Kun Xue , Xu-Cun Ma , Li-Li Wang , Xi Chen , Jin-Feng Jia , Ke He , Shuai-Hua Ji , Wen-Hao Zhang , Qing-Yan Wang , Zhi Li
CPC classification number: H01L39/2403 , H01B12/06 , H01B13/0036 , H01L39/12
Abstract: A method for making a high-temperature superconducting film includes loading a SrTiO3 substrate in an ultra-high vacuum system. A single crystalline FeSe layer is grown on a surface of the SrTiO3 substrate by molecular beam epitaxy. A protective layer with a layered crystal structure is grown by molecular beam epitaxy and covering the single crystalline FeSe layer.
Abstract translation: 制造高温超导膜的方法包括在超高真空系统中加载SrTiO 3基板。 通过分子束外延在SrTiO3衬底的表面上生长单晶FeSe层。 具有层状晶体结构的保护层通过分子束外延生长并覆盖单晶FeSe层。
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