Invention Grant
- Patent Title: Preparation method for fully transparent thin film transistor
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Application No.: US16471391Application Date: 2017-03-23
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Publication No.: US10749016B2Publication Date: 2020-08-18
- Inventor: Yonghui Zhang , Zengxia Mei , Huili Liang , Xiaolong Du
- Applicant: INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES
- Applicant Address: CN Beijing
- Assignee: INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES
- Current Assignee: INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES
- Current Assignee Address: CN Beijing
- Agency: Knobbe, Martens, Olson, Bear & LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@cc1e5c1
- International Application: PCT/CN2017/077818 WO 20170323
- International Announcement: WO2018/133195 WO 20180726
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/02 ; H01L21/027 ; H01L21/445 ; H01L29/22 ; H01L29/24 ; H01L29/423 ; H01L29/45 ; H01L29/49 ; H01L29/786
Abstract:
The present invention provides a preparation method for a fully-transparent thin film transistor, wherein a transparent conductive gate electrode layer of the fully-transparent thin film transistor is used as a photolithographic mask, a photoresist is exposed through a rear surface of a transparent substrate, the transparent substrate has a transmittance higher than 60% to an exposure light beam, and the transparent conductive gate electrode layer has a transmittance lower than 5% to the exposure light beam. In the preparation method for a fully-transparent thin film transistor provided by the present invention, by using a self-aligned technology, the process complexity and the feature size of the device can both be reduced.
Public/Granted literature
- US20190334018A1 PREPARATION METHOD FOR FULLY TRANSPARENT THIN FILM TRANSISTOR Public/Granted day:2019-10-31
Information query
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