公开(公告)号：US20190334018A1

公开(公告)日：2019-10-31

申请号：US16471391

申请日：2017-03-23

Applicant: INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES

Inventor： Yonghui ZHANG ,  Zengxia MEI ,  Huili LIANG ,  Xiaolong DU

IPC: H01L29/66 ,  H01L29/49 ,  H01L21/027 ,  H01L29/423 ,  H01L29/786 ,  H01L21/445 ,  H01L21/02 ,  H01L29/45 ,  H01L29/24 ,  H01L29/22

Abstract: The present invention provides a preparation method for a fully-transparent thin film transistor, wherein a transparent conductive gate electrode layer of the fully-transparent thin film transistor is used as a photolithographic mask, a photoresist is exposed through a rear surface of a transparent substrate, the transparent substrate has a transmittance higher than 60% to an exposure light beam, and the transparent conductive gate electrode layer has a transmittance lower than 5% to the exposure light beam. In the preparation method for a fully-transparent thin film transistor provided by the present invention, by using a self-aligned technology, the process complexity and the feature size of the device can both be reduced.