APPARATUS AND METHOD FOR MATERIALS PROCESSING UTILIZING A ROTATING MAGNETIC FIELD
    23.
    发明申请
    APPARATUS AND METHOD FOR MATERIALS PROCESSING UTILIZING A ROTATING MAGNETIC FIELD 有权
    利用旋转磁场进行材料加工的装置及方法

    公开(公告)号:US20150064360A1

    公开(公告)日:2015-03-05

    申请号:US14015490

    申请日:2013-08-30

    申请人: UT-Battelle, LLC

    IPC分类号: B05D3/00

    摘要: An apparatus for materials processing utilizing a rotating magnetic field comprises a platform for supporting a specimen, and a plurality of magnets underlying the platform. The plurality of magnets are configured for rotation about an axis of rotation intersecting the platform. A heat source is disposed above the platform for heating the specimen during the rotation of the plurality of magnets. A method for materials processing utilizing a rotating magnetic field comprises providing a specimen on a platform overlying a plurality of magnets; rotating the plurality of magnets about an axis of rotation intersecting the platform, thereby applying a rotating magnetic field to the specimen; and, while rotating the plurality of magnets, heating the specimen to a desired temperature.

    摘要翻译: 利用旋转磁场的材料处理装置包括用于支撑样本的平台和在平台下面的多个磁体。 多个磁体被配置为围绕与平台相交的旋转轴线旋转。 热源设置在平台上方,用于在多个磁体旋转期间加热样品。 利用旋转磁场的材料处理方法包括:在覆盖多个磁体的平台上提供试样; 围绕与平台交叉的旋转轴旋转多个磁体,从而向样本施加旋转磁场; 并且在旋转多个磁体的同时,将样品加热至期望的温度。

    SEMICONDUCTOR UNIT
    28.
    发明申请
    SEMICONDUCTOR UNIT 审中-公开
    半导体器件

    公开(公告)号:US20140117508A1

    公开(公告)日:2014-05-01

    申请号:US14064806

    申请日:2013-10-28

    IPC分类号: H01L29/06

    摘要: A semiconductor unit includes an insulating substrate having a first surface and a second surface opposite to the first surface, a first conductive layer bonded to the first surface of the insulating substrate, a second conductive layer bonded to the first surface of the insulating substrate at a position different from that for the first conductive layer, a stress relief layer bonded to the second surface of the insulating substrate, a radiator bonded to the stress relief layer on the side thereof opposite to the insulating substrate, and semiconductor devices electrically bonded to the respective first and second conductive layers. The insulating substrate has a low-rigidity portion provided between the first and second conductive layers and having a lower rigidity than the rest of the insulating substrate, and at least the low-rigidity portion is sealed and covered by a mold resin.

    摘要翻译: 半导体单元包括具有第一表面和与第一表面相对的第二表面的绝缘基板,与绝缘基板的第一表面接合的第一导电层,在绝缘基板的第一表面上接合的第二导电层, 位置不同于第一导电层的位置,与绝缘基板的第二表面接合的应力消除层,与绝缘基板相对的一侧上的应力消除层接合的散热器,以及与绝缘基板电连接的半导体器件 第一和第二导电层。 绝缘基板具有设置在第一和第二导电层之间并且具有比绝缘基板的其余部分更低的刚性的低刚性部分,并且至少低刚性部分被模制树脂密封和覆盖。

    METHOD FOR JOINING TWO PARTNERS TO BE JOINED, I.E. CERAMIC AND METAL/CERAMIC MATERIALS, USING A LASER BEAM
    29.
    发明申请
    METHOD FOR JOINING TWO PARTNERS TO BE JOINED, I.E. CERAMIC AND METAL/CERAMIC MATERIALS, USING A LASER BEAM 审中-公开
    加入两个合作伙伴的方法,I.E. 陶瓷和金属/陶瓷材料,使用激光束

    公开(公告)号:US20130248499A1

    公开(公告)日:2013-09-26

    申请号:US13878603

    申请日:2011-10-12

    IPC分类号: B23K26/32

    摘要: The invention relates to a method for joining two partners to be joined at defined joining points, one partner (1) being made of a ceramic material and the other partner being made of a metal or a ceramic material. The aim of the invention is to improve such a method in such a way as to make the same easy to use while creating a permanent joint. Said aim is achieved by arranging the partners (1) to be joined in such a way that the partners (1) are in contact with each other at the joining points, and directing a laser beam to one of the partners (1) at the joining points in such a way as to make the laser beam shoot through said partner and at least partially penetrate into the other partner (1).

    摘要翻译: 本发明涉及一种用于连接要在规定的接合点处接合的两个对象的方法,一个对象(1)由陶瓷材料制成,另一个对象由金属或陶瓷材料制成。 本发明的目的是改进这种方法,使得在制造永久性接头的同时易于使用。 所述目的是通过将合作伙伴(1)以使得合作伙伴(1)在联接点彼此接触的方式安排在一起,并且将激光束引导到其中一个伙伴(1)的方式来实现 以使激光束穿过所述对象并且至少部分地渗透到另一个对象(1)中的方式连接点。