公开(公告)号：US09237682B2

公开(公告)日：2016-01-12

申请号：US14388560

申请日：2013-03-29

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Yoshiyuki Nagatomo ,  Hiroya Ishizuka ,  Toshiyuki Nagase ,  Yoshirou Kuromitsu ,  Masakazu Edo ,  Hideyuki Miyake

IPC: H01L23/34 ,  C23C8/00 ,  H05K7/20 ,  H01L23/373 ,  H01L23/473 ,  C04B37/02 ,  H01L23/40

CPC classification number: H05K7/209 ,  B23K1/0016 ,  B23K35/0222 ,  B23K35/0233 ,  B23K35/0238 ,  B23K35/286 ,  C04B37/026 ,  C04B2235/6584 ,  C04B2237/121 ,  C04B2237/128 ,  C04B2237/343 ,  C04B2237/366 ,  C04B2237/368 ,  C04B2237/402 ,  C04B2237/704 ,  C04B2237/706 ,  C04B2237/86 ,  H01L23/3735 ,  H01L23/4006 ,  H01L23/473 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/29111 ,  H01L2224/32225 ,  H01L2924/01047 ,  H01L2924/014 ,  H01L2924/01049 ,  H01L2924/01029

Abstract: This power module substrate with a heat sink includes a power module substrate having a circuit layer disposed on one surface of an insulating layer, and a heat sink bonded to the other surface of this power module substrate, wherein the bonding surface of the heat sink and the bonding surface of the power module substrate are each composed of aluminum or an aluminum alloy, a bonding layer (50) having a Mg-containing compound (52) (excluding MgO) which contains Mg dispersed in an Al—Si eutectic composition is formed at the bonding interface between the heat sink and the power module substrate, and the thickness t of this bonding layer (50) is within a range from 5 μm to 80 μm.

Abstract translation: 具有散热器的功率模块基板包括电源模块基板，其具有设置在绝缘层的一个表面上的电路层和与该功率模块基板的另一个表面接合的散热器，其中散热器的接合表面和 功率模块用基板的接合面由铝或铝合金构成，形成含有分散在Al-Si共晶组合物中的分散有Mg的含Mg化合物（52）（不含MgO）的接合层（50） 在散热器和功率模块基板之间的接合界面处，并且该接合层（50）的厚度t在5μm至80μm的范围内。

公开(公告)号：US20150055303A1

公开(公告)日：2015-02-26

申请号：US14388560

申请日：2013-03-29

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Yoshiyuki Nagatomo ,  Hiroya Ishizuka ,  Toshiyuki Nagase ,  Yoshirou Kuromitsu ,  Masakazu Edo ,  Hideyuki Miyake

IPC: H05K7/20

CPC classification number: H05K7/209 ,  B23K1/0016 ,  B23K35/0222 ,  B23K35/0233 ,  B23K35/0238 ,  B23K35/286 ,  C04B37/026 ,  C04B2235/6584 ,  C04B2237/121 ,  C04B2237/128 ,  C04B2237/343 ,  C04B2237/366 ,  C04B2237/368 ,  C04B2237/402 ,  C04B2237/704 ,  C04B2237/706 ,  C04B2237/86 ,  H01L23/3735 ,  H01L23/4006 ,  H01L23/473 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/29111 ,  H01L2224/32225 ,  H01L2924/01047 ,  H01L2924/014 ,  H01L2924/01049 ,  H01L2924/01029

Abstract: This power module substrate with a heat sink includes a power module substrate having a circuit layer disposed on one surface of an insulating layer, and a heat sink bonded to the other surface of this power module substrate, wherein the bonding surface of the heat sink and the bonding surface of the power module substrate are each composed of aluminum or an aluminum alloy, a bonding layer (50) having a Mg-containing compound (52) (excluding MgO) which contains Mg dispersed in an Al—Si eutectic composition is formed at the bonding interface between the heat sink and the power module substrate, and the thickness t of this bonding layer (50) is within a range from 5 μm to 80 μm.

Abstract translation: 具有散热器的功率模块基板包括电源模块基板，其具有设置在绝缘层的一个表面上的电路层和与该功率模块基板的另一个表面接合的散热器，其中散热器的接合表面和 功率模块用基板的接合面由铝或铝合金构成，形成含有分散在Al-Si共晶组合物中的分散有Mg的含Mg化合物（52）（不含MgO）的接合层（50） 在散热器和功率模块基板之间的接合界面处，并且该接合层（50）的厚度t在5μm至80μm的范围内。

公开(公告)号：US20160336099A1

公开(公告)日：2016-11-17

申请号：US15110096

申请日：2015-01-07

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Toshiyuki Nagase ,  Hiroya Ishizuka

IPC: H01C1/084 ,  H01C17/00 ,  H01C17/28 ,  H01C1/14

CPC classification number: H01C1/084 ,  H01C1/01 ,  H01C1/14 ,  H01C1/142 ,  H01C1/144 ,  H01C17/006 ,  H01C17/28 ,  H01C17/281 ,  H01C17/283 ,  H01L2224/40 ,  H01L2924/181 ,  H01L2924/00012

Abstract: In this resistor, a heat sink (Al member) (23) and the other surface (11b) of a ceramic substrate (11) are joined together using an Al—Si-based brazing filler material. The Al—Si-based brazing filler material has a melting point in a range of approximately 600° C. to 700° C. When the heat sink (23) and the ceramic substrate (11) are joined together using the Al—Si-based brazing filler material, it is possible to prevent the derogation of the heat resistance and thermal deterioration during joining at the same time.

Abstract translation: 在该电阻器中，使用Al-Si系钎焊料将散热器（Al构件）（23）和陶瓷基板（11）的另一面（11b）接合在一起。 Al-Si系钎焊料的熔点为约600℃〜700℃。当散热器（23）和陶瓷基板（11）使用Al-Si- 可以同时防止接合时的耐热性和热劣化的减损。

公开(公告)号：US20150289385A1

公开(公告)日：2015-10-08

申请号：US14652554

申请日：2013-12-03

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Hiroya Ishizuka

IPC: H05K3/20 ,  B23K1/19 ,  B23K1/00

CPC classification number: H05K3/20 ,  B23K1/0016 ,  B23K1/19 ,  C04B37/026 ,  C04B2237/121 ,  C04B2237/128 ,  C04B2237/365 ,  C04B2237/366 ,  C04B2237/402 ,  C04B2237/407 ,  C04B2237/52 ,  C04B2237/704 ,  H01L21/4871 ,  H01L23/3735 ,  H01L2924/0002 ,  H05K2203/04 ,  H01L2924/00

Abstract: A manufacturing method of power-module substrate (10), the power-module substrate (10) being obtained by joining a circuit layer (12) made of copper to one surface of a ceramic substrate (11) and joining a heat-radiation layer (13) made of aluminum to the other surface of the ceramic substrate (11), including: a circuit layer bonding step in which the circuit layer (12) is brazed on the ceramic substrate (11), a surface treatment step after the circuit layer bonding step in which a thickness of an oxide film on the other surface of the ceramic substrate (11) is made 3.2 nm or less at least at a peripheral part of an intended bonding area between the ceramic substrate (11) and the heat-radiation layer (13), and a heat-radiation layer bonding step in which the heat-radiation layer (13) is brazed on the other surface of the ceramic substrate (11) after the surface treatment step.

Abstract translation: 一种功率模块用基板（10）的制造方法，其特征在于，通过将由铜构成的电路层（12）接合在陶瓷基板（11）的一个表面上，并将热辐射层 （13），其包括：电路层接合步骤，其中所述电路层（12）钎焊在所述陶瓷基板（11）上;电路层接合步骤，在所述电路之后的表面处理步骤 陶瓷基板（11）的另一个表面上的氧化膜的厚度至少在陶瓷基板（11）和热敏陶瓷基板（11）之间的预定接合区域的周边部分的距离为3.2nm以下， 辐射层（13）和在表面处理步骤之后在陶瓷基板（11）的另一个表面上钎焊热辐射层（13）的散热层接合步骤。

公开(公告)号：US09079264B2

公开(公告)日：2015-07-14

申请号：US13867439

申请日：2013-04-22

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Hiroshi Tonomura ,  Takeshi Kitahara ,  Hiroya Ishizuka ,  Yoshirou Kuromitsu ,  Yoshiyuki Nagatomo

IPC: B44C1/22 ,  B23K1/20 ,  H01L21/48 ,  H01L23/15 ,  H01L23/373 ,  H01L23/40 ,  H01L23/473 ,  H05K3/38 ,  C04B35/584 ,  C04B37/02 ,  H05K1/03 ,  H05K3/00

CPC classification number: B23K1/20 ,  C04B35/584 ,  C04B37/026 ,  C04B2235/72 ,  C04B2235/721 ,  C04B2235/723 ,  C04B2235/96 ,  C04B2237/121 ,  C04B2237/128 ,  C04B2237/368 ,  C04B2237/402 ,  C04B2237/52 ,  C04B2237/704 ,  C04B2237/706 ,  C04B2237/86 ,  H01L21/4807 ,  H01L21/481 ,  H01L23/15 ,  H01L23/3735 ,  H01L23/4006 ,  H01L23/473 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2924/1305 ,  H01L2924/13055 ,  H05K1/0306 ,  H05K3/0029 ,  H05K3/0052 ,  H05K3/38 ,  H05K3/381 ,  H05K2201/0355 ,  H05K2201/09036 ,  H05K2201/0909 ,  H05K2203/095 ,  Y10T29/49155 ,  H01L2924/00

Abstract: Disclosed is a ceramic substrate including silicon in which the concentration of a silicon oxide and a silicon composite oxide in the surface thereof is less than or equal to 2.7 Atom %.

Abstract translation: 公开了包括硅的陶瓷基板，其表面中的氧化硅和硅复合氧化物的浓度小于或等于2.7原子％。

公开(公告)号：US10057993B2

公开(公告)日：2018-08-21

申请号：US14652554

申请日：2013-12-03

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Hiroya Ishizuka

IPC: B23K1/00 ,  H05K3/20 ,  H01L23/373 ,  H01L21/48 ,  C04B37/02 ,  B23K1/19

CPC classification number: H05K3/20 ,  B23K1/0016 ,  B23K1/19 ,  C04B37/026 ,  C04B2237/121 ,  C04B2237/128 ,  C04B2237/365 ,  C04B2237/366 ,  C04B2237/402 ,  C04B2237/407 ,  C04B2237/52 ,  C04B2237/704 ,  H01L21/4871 ,  H01L23/3735 ,  H01L2924/0002 ,  H05K2203/04 ,  H01L2924/00

Abstract: A manufacturing method of power-module substrate (10), the power-module substrate (10) being obtained by joining a circuit layer (12) made of copper to one surface of a ceramic substrate (11) and joining a heat-radiation layer (13) made of aluminum to the other surface of the ceramic substrate (11), including: a circuit layer bonding step in which the circuit layer (12) is brazed on the ceramic substrate (11), a surface treatment step after the circuit layer bonding step in which a thickness of an oxide film on the other surface of the ceramic substrate (11) is made 3.2 nm or less at least at a peripheral part of an intended bonding area between the ceramic substrate (11) and the heat-radiation layer (13), and a heat-radiation layer bonding step in which the heat-radiation layer (13) is brazed on the other surface of the ceramic substrate (11) after the surface treatment step.

公开(公告)号：US10037837B2

公开(公告)日：2018-07-31

申请号：US15110096

申请日：2015-01-07

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Toshiyuki Nagase ,  Hiroya Ishizuka

IPC: H01C1/084 ,  H01C1/14 ,  H01C17/00 ,  H01C17/28 ,  H01C1/142 ,  H01C1/144 ,  H01C1/01

CPC classification number: H01C1/084 ,  H01C1/01 ,  H01C1/14 ,  H01C1/142 ,  H01C1/144 ,  H01C17/006 ,  H01C17/28 ,  H01C17/281 ,  H01C17/283 ,  H01L2224/40 ,  H01L2924/181 ,  H01L2924/00012

Abstract: In this resistor, a heat sink (Al member) (23) and the other surface (11b) of a ceramic substrate (11) are joined together using an Al—Si-based brazing filler material. The Al—Si-based brazing filler material has a melting point in a range of approximately 600° C. to 700° C. When the heat sink (23) and the ceramic substrate (11) are joined together using the Al—Si-based brazing filler material, it is possible to prevent the derogation of the heat resistance and thermal deterioration during joining at the same time.

公开(公告)号：US20130232783A1

公开(公告)日：2013-09-12

申请号：US13867439

申请日：2013-04-22

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Hiroshi Tonomura ,  Takeshi Kitahara ,  Hiroya Ishizuka ,  Yoshirou Kuromitsu ,  Yoshiyuki Nagatomo

IPC: B23K1/20

CPC classification number: B23K1/20 ,  C04B35/584 ,  C04B37/026 ,  C04B2235/72 ,  C04B2235/721 ,  C04B2235/723 ,  C04B2235/96 ,  C04B2237/121 ,  C04B2237/128 ,  C04B2237/368 ,  C04B2237/402 ,  C04B2237/52 ,  C04B2237/704 ,  C04B2237/706 ,  C04B2237/86 ,  H01L21/4807 ,  H01L21/481 ,  H01L23/15 ,  H01L23/3735 ,  H01L23/4006 ,  H01L23/473 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2924/1305 ,  H01L2924/13055 ,  H05K1/0306 ,  H05K3/0029 ,  H05K3/0052 ,  H05K3/38 ,  H05K3/381 ,  H05K2201/0355 ,  H05K2201/09036 ,  H05K2201/0909 ,  H05K2203/095 ,  Y10T29/49155 ,  H01L2924/00

Abstract: Disclosed is a ceramic substrate including silicon in which the concentration of a silicon oxide and a silicon composite oxide in the surface thereof is less than or equal to 2.7 Atom %.

Abstract translation: 公开了包括硅的陶瓷基板，其表面中的氧化硅和硅复合氧化物的浓度小于或等于2.7原子％。