公开(公告)号：US20180040452A1

公开(公告)日：2018-02-08

申请号：US15667040

申请日：2017-08-02

Applicant: EBARA CORPORATION

Inventor： Masahiro HATAKEYAMA ,  Ryo TAJIMA ,  Kenichi SUEMATSU ,  Kenji WATANABE ,  Yasushi TOMA ,  Kenji TERAO ,  Takeshi MURAKAMI

IPC: H01J37/05 ,  H01J37/147 ,  H01J37/141

CPC classification number: H01J37/05 ,  H01J37/141 ,  H01J37/147 ,  H01J37/244 ,  H01J37/26 ,  H01J37/29

Abstract: An electron beam inspection device includes: a primary electron optical system that irradiates the surface of a sample with an electron beam; and a secondary electron optical system that gathers secondary electrons emitted from the sample and forms an image on the sensor surface of a detector. An electron image of the surface of the sample is obtained from a signal detected by the detector, and the sample is inspected. A cylindrical member that is formed with conductors stacked as an inner layer and an outer layer, and an insulator stacked as an intermediate layer is provided inside a lens tube into which the secondary electron optical system is incorporated. An electron orbital path is formed inside the cylindrical member, and the members constituting the secondary electron optical system are arranged outside the cylindrical member.

公开(公告)号：US20170352519A1

公开(公告)日：2017-12-07

申请号：US15602761

申请日：2017-05-23

Applicant: Infineon Technologies AG

Inventor： Roland Rupp ,  Andre Brockmeier

IPC: H01J37/05 ,  H01J37/317

CPC classification number: H01J37/05 ,  H01J37/3171 ,  H01J2237/057 ,  H01J2237/31701

Abstract: A method of producing an implantation ion energy filter, suitable for processing a power semiconductor device. In one example, the method includes creating a preform having a first structure; providing an energy filter body material; and structuring the energy filter body material by using the preform, thereby establishing an energy filter body having a second structure.

公开(公告)号：US20170263415A1

公开(公告)日：2017-09-14

申请号：US15529281

申请日：2014-11-26

Applicant: Hitachi, Ltd.

Inventor： Daisuke BIZEN ,  Hideo MORISHITA ,  Michio HATANO ,  Hiroya OHTA

IPC: H01J37/26 ,  H01J37/147 ,  H01J37/10 ,  H01J37/285 ,  H01J37/28 ,  H01J37/05

CPC classification number: H01J37/263 ,  H01J37/05 ,  H01J37/10 ,  H01J37/1472 ,  H01J37/21 ,  H01J37/244 ,  H01J37/28 ,  H01J37/285 ,  H01J2237/0473 ,  H01J2237/0475 ,  H01J2237/057 ,  H01J2237/1534 ,  H01J2237/24485 ,  H01J2237/2806 ,  H01J2237/2823

Abstract: To provide a scanning electron microscope having an electron spectroscopy system to attain high spatial resolution and a high secondary electron detection rate under the condition that energy of primary electrons is low, the scanning electron microscope includes: an objective lens 105; primary electron acceleration means 104 that accelerates primary electrons 102; primary electron deceleration means 109 that decelerates the primary electrons and irradiates them to a sample 106; a secondary electron deflector 103 that deflects secondary electrons 110 from the sample to the outside of an optical axis of the primary electrons; a spectroscope 111 that disperses secondary electrons; and a controller that controls application voltage to the objective lens, the primary electron acceleration means and the primary electron deceleration means so as to converge the secondary electrons to an entrance of the spectroscope.

公开(公告)号：US09741525B1

公开(公告)日：2017-08-22

申请号：US15218643

申请日：2016-07-25

Applicant: FEI Company

Inventor： Bohuslav Sed'a ,  Lubomir Tuma ,  Alexander Henstra

IPC: H01J37/12 ,  H01J37/28 ,  H01J37/20 ,  H01J37/153 ,  H01J37/26 ,  H01J37/09

CPC classification number: H01J37/153 ,  H01J37/05 ,  H01J37/09 ,  H01J37/26 ,  H01J37/28 ,  H01J2237/0451 ,  H01J2237/0453 ,  H01J2237/1532 ,  H01J2237/2826

Abstract: A method of producing a corrected beam of charged particles for use in a charged-particle microscope, comprising the following steps: Providing a non-monoenergetic input beam of charged particles; Passing said input beam through an optical module comprising a series arrangement of: A stigmator, thereby producing an astigmatism-compensated, energy-dispersed intermediate beam with a particular monoenergetic line focus direction; A beam selector, comprising a slit that is rotationally oriented so as to match a direction of the slit to said line focus direction, thereby producing an output beam comprising an energy-discriminated portion of said intermediate beam.

公开(公告)号：US20170221673A1

公开(公告)日：2017-08-03

申请号：US15218643

申请日：2016-07-25

Applicant: FEI Company

Inventor： Bohuslav Sed'a ,  Lubomir Tuma ,  Alexander Henstra

IPC: H01J37/153 ,  H01J37/09 ,  H01J37/26

CPC classification number: H01J37/153 ,  H01J37/05 ,  H01J37/09 ,  H01J37/26 ,  H01J37/28 ,  H01J2237/0451 ,  H01J2237/0453 ,  H01J2237/1532 ,  H01J2237/2826

Abstract: A method of producing a corrected beam of charged particles for use in a charged-particle microscope, comprising the following steps: Providing a non-monoenergetic input beam of charged particles; Passing said input beam through an optical module comprising a series arrangement of: A stigmator, thereby producing an astigmatism-compensated, energy-dispersed intermediate beam with a particular monoenergetic line focus direction; A beam selector, comprising a slit that is rotationally oriented so as to match a direction of the slit to said line focus direction, thereby producing an output beam comprising an energy-discriminated portion of said intermediate beam.

公开(公告)号：US09687810B2

公开(公告)日：2017-06-27

申请号：US15178958

申请日：2016-06-10

Applicant: XYLECO, INC.

Inventor： Marshall Medoff

IPC: B01J19/08 ,  B01J19/10 ,  B01J19/12 ,  C10L9/00 ,  H01J37/04 ,  H01J37/05 ,  C10L5/44

CPC classification number: B01J19/081 ,  B01J19/085 ,  B01J19/10 ,  B01J19/12 ,  B01J2219/0879 ,  B01J2219/12 ,  C10L1/02 ,  C10L5/44 ,  C10L9/00 ,  C10L2200/0469 ,  C10L2290/26 ,  C10L2290/36 ,  C12P3/00 ,  C12P7/02 ,  H01J37/04 ,  H01J37/05 ,  Y02E50/30

Abstract: Materials such as biomass (e.g., plant biomass, animal biomass, and municipal waste biomass) and hydrocarbon-containing materials are processed to produce useful products, such as fuels. For example, systems are described that can use feedstock materials, such as cellulosic and/or lignocellulosic materials and/or starchy materials, or oil sands, oil shale, tar sands, bitumen, and coal to produce altered materials such as fuels (e.g., ethanol and/or butanol). The processing includes exposing the materials to an ion beam.

公开(公告)号：US09679739B2

公开(公告)日：2017-06-13

申请号：US14978089

申请日：2015-12-22

Applicant: Axcelis Technologies, Inc.

Inventor： Edward C. Eisner ,  Bo H. Vanderberg

IPC: H01J37/00 ,  H01J37/12 ,  H01J37/05 ,  H01J37/147 ,  H01J37/20 ,  H01J37/30 ,  H01J37/317

CPC classification number: H01J37/12 ,  H01J37/05 ,  H01J37/1472 ,  H01J37/20 ,  H01J37/30 ,  H01J37/3171 ,  H01J2237/31705

Abstract: A system and method are provided for implanting ions at low energies into a workpiece. An ion source configured to generate an ion beam is provided, wherein a mass resolving magnet is configured to mass resolve the ion beam. The ion beam may be a ribbon beam or a scanned spot ion beam. A mass resolving aperture positioned downstream of the mass resolving magnet filters undesirable species from the ion beam. A combined electrostatic lens system is positioned downstream of the mass analyzer, wherein a path of the ion beam is deflected and contaminants are generally filtered out of the ion beam, while concurrently decelerating and parallelizing the ion beam. A workpiece scanning system is further positioned downstream of the combined electrostatic lens system, and is configured to selectively translate a workpiece in one or more directions through the ion beam, therein implanting ions into the workpiece.

公开(公告)号：US09679738B2

公开(公告)日：2017-06-13

申请号：US14916529

申请日：2014-05-16

Applicant: Hitachi High-Technologies Corporation

Inventor： Hiroaki Matsumoto ,  Takeshi Sato ,  Yoshifumi Taniguchi ,  Ken Harada

IPC: H01J47/00 ,  H01J37/10 ,  H01J37/295 ,  H01J37/04 ,  H01J37/26 ,  G01N23/20 ,  H01J37/09 ,  H01J37/147 ,  H01J37/153 ,  H01J37/24 ,  H01J37/244 ,  H01J37/28 ,  H01J37/05 ,  H01J37/285

CPC classification number: H01J37/10 ,  G01N23/20058 ,  G01N2223/418 ,  H01J37/04 ,  H01J37/05 ,  H01J37/09 ,  H01J37/147 ,  H01J37/1472 ,  H01J37/153 ,  H01J37/24 ,  H01J37/244 ,  H01J37/26 ,  H01J37/261 ,  H01J37/28 ,  H01J37/285 ,  H01J37/295 ,  H01J2237/21 ,  H01J2237/2614

Abstract: The present invention relates to a lens-less Foucault method wherein a transmission electron microscope objective lens (5) is turned off, an electron beam crossover (11, 13) is matched with a selected area aperture (65), and the focal distance of a first imaging lens (61) can be changed to enable switching between a sample image observation mode and a sample diffraction pattern observation mode, characterized in that a deflector (81) is disposed in a stage following the first imaging lens (61), and conditions for an irradiating optical system (4) can be fixed after conditions for the imaging optical system have been determined. This allows a lens-less Foucault method to be implemented in a common general-use transmission electron microscope with no magnetic shielding lens equipped, without burdening the operator.

公开(公告)号：US09673114B1

公开(公告)日：2017-06-06

申请号：US14695767

申请日：2015-04-24

Applicant: Multibeam Corporation

Inventor： David K. Lam ,  Kevin M. Monahan ,  Michael C. Smayling ,  Theodore A. Prescop

IPC: H01L21/66 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/26 ,  H01J37/305 ,  H01J37/30

CPC classification number: H01L21/3065 ,  B81C1/00373 ,  B81C2201/0143 ,  B81C2201/0188 ,  C23C14/48 ,  C23C16/047 ,  C23C16/48 ,  C23C16/486 ,  C23C16/487 ,  H01J37/05 ,  H01J37/06 ,  H01J37/08 ,  H01J37/228 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/0635 ,  H01J2237/1501 ,  H01J2237/24592 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31708 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/26 ,  H01L21/308 ,  H01L21/3085 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: Methods, devices and systems for patterning of substrates using charged particle beams without photomasks and without a resist layer. Material can be removed from a substrate, as directed by a design layout database, localized to positions targeted by multiple, matched charged particle beams. Reducing the number of process steps, and eliminating lithography steps, in localized material removal has the dual benefit of reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Furthermore, highly localized, precision material removal allows for controlled variation of removal rate and enables creation of 3D structures or profiles. Local gas injectors and detectors, and local photon injectors and detectors, are local to corresponding ones of the columns, and can be used to facilitate rapid, accurate, targeted substrate processing.

公开(公告)号：US20170062173A1

公开(公告)日：2017-03-02

申请号：US14837610

申请日：2015-08-27

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： William Davis Lee

IPC: H01J37/08 ,  H01J37/147 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/05 ,  H01J37/1472 ,  H01J37/3171 ,  H01J2237/053 ,  H01J2237/0815 ,  H01J2237/31701 ,  H01J2237/31705

Abstract: An apparatus, referred to as a light bath, is disposed in a beamline ion implantation system and is used to photoionize particles in the ion beam into positively charged particles. Once positively charged, these particles can be manipulated by the various components in the beamline ion implantation system. In certain embodiments, a positively biased electrode is disposed downstream from the light bath to repel the formerly non-positively charged particles away from the workpiece. In certain embodiments, the light bath is disposed within an existing component in the beamline ion implantation system, such as a deceleration stage or a Vertical Electrostatic Energy Filter. The light source emits light at a wavelength sufficiently short so as to ionize the non-positively charged particles. In certain embodiments, the wavelength is less than 250 nm.

Abstract translation: 称为光浴的装置设置在束线离子注入系统中，用于将离子束中的颗粒光电离成带正电的颗粒。 一旦带正电，这些颗粒可以通过束线离子注入系统中的各种组分来操纵。 在某些实施例中，正偏置的电极设置在光浴的下游，以将以前不带正电的颗粒排斥离开工件。 在某些实施例中，光浴设置在束线离子注入系统中的现有部件内，例如减速阶段或垂直静电能量过滤器。 光源以足够短的波长发射光，以使非正电荷的粒子离子化。 在某些实施方案中，波长小于250nm。