公开(公告)号：US12040776B2

公开(公告)日：2024-07-16

申请号：US16526633

申请日：2019-07-30

申请人： Intel Corporation

发明人： Telesphor Kamgaing ,  Aleksandar Aleksov ,  Feras Eid ,  Georgios Dogiamis ,  Johanna M. Swan

IPC分类号： H03H9/05 ,  H01L23/00 ,  H01L23/538 ,  H01L25/00 ,  H01L25/18 ,  H03H9/58 ,  H10N30/87 ,  H10N30/88 ,  H10N39/00 ,  H01L23/498

CPC分类号： H03H9/0552 ,  H01L23/5385 ,  H01L24/16 ,  H01L25/18 ,  H01L25/50 ,  H03H9/58 ,  H10N30/875 ,  H10N30/883 ,  H10N39/00 ,  H01L23/49816 ,  H01L2224/16225 ,  H01L2924/19042

摘要： Embodiments may relate to a radio frequency (RF) front-end module (FEM) that includes an acoustic wave resonator (AWR) die. The RF FEM may further include an active die coupled with the package substrate of the RF FEM. When the active die is coupled with the package substrate, the AWR die may be between the active die and the package substrate. Other embodiments may be described or claimed.

公开(公告)号：US20240186980A1

公开(公告)日：2024-06-06

申请号：US18439453

申请日：2024-02-12

申请人： RF360 Singapore Pte. Ltd.

发明人： Markus SCHIEBER

IPC分类号： H03H9/10 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02 ,  H10N30/02 ,  H10N30/06 ,  H10N30/87 ,  H10N30/88

CPC分类号： H03H9/1071 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02086 ,  H03H9/02913 ,  H03H9/1014 ,  H10N30/02 ,  H10N30/06 ,  H10N30/875 ,  H10N30/883

摘要： A wafer level package comprises a functional wafer with a first surface, device structures connected to device pads arranged on the first surface. A cap wafer, having an inner and an outer surface, is bonded with the inner surface to the first surface of the functional wafer. A frame structure surrounding the device structures is arranged between functional wafer and cap wafer. Connection posts are connecting the device pads on the first surface to inner cap pads on the inner surface. Electrically conducting vias are guided through the cap wafer connecting inner cap pads on the inner surface and package pads on the outer surface of the cap wafer.

公开(公告)号：US11848659B2

公开(公告)日：2023-12-19

申请号：US16651833

申请日：2018-09-28

申请人： NAGASE CHEMTEX CORPORATION

发明人： Takayuki Hashimoto ,  Takuya Ishibashi ,  Hiroyuki Okada ,  Kazuki Nishimura

IPC分类号： H03H9/10 ,  B29C51/12 ,  B29C51/14 ,  B32B27/08 ,  H03H9/05 ,  H05K3/28 ,  H10N30/02 ,  H10N30/88 ,  H10N30/87 ,  B29K101/10 ,  B29L31/34

CPC分类号： H03H9/1085 ,  B29C51/12 ,  B29C51/14 ,  B32B27/08 ,  H03H9/059 ,  H05K3/284 ,  H10N30/02 ,  H10N30/875 ,  H10N30/88 ,  H10N30/883 ,  B29K2101/10 ,  B29L2031/34 ,  Y10T29/49146

摘要： A manufacturing method of a mounting structure, the method including: a step of preparing a mounting member including a first circuit member and a plurality of second circuit members placed on the first circuit member; a step of preparing a sheet having thermosetting property; a disposing step of disposing the sheet on the mounting member so as to face the second circuit members; and a sealing step of pressing the sheet against the first circuit member and heating the sheet, to seal the second circuit members and to cure the sheet, wherein the second circuit members include a reference member, and a first adjacent member and a second adjacent member each adjacent to the reference member, a separation distance D1 between the reference member and the first adjacent member is different from a separation distance D2 between the reference member and the second adjacent member, at least one of the plurality of the second circuit members is a hollow member to be provided with a space from the first circuit member, and in the sealing step, the plurality of the second circuit members are sealed so as to maintain the space.

公开(公告)号：US11848162B2

公开(公告)日：2023-12-19

申请号：US16211348

申请日：2018-12-06

申请人： Murata Manufacturing Co., Ltd.

发明人： Makoto Togawa

IPC分类号： H01G4/38 ,  H01G4/012 ,  H01G4/232 ,  H01G4/248 ,  H01G4/30 ,  H10N30/50 ,  H10N30/88 ,  H10N30/87 ,  H10N30/853 ,  H01G4/12

CPC分类号： H01G4/38 ,  H01G4/012 ,  H01G4/232 ,  H01G4/248 ,  H10N30/50 ,  H10N30/8536 ,  H10N30/871 ,  H10N30/872 ,  H10N30/875 ,  H10N30/88 ,  H01G4/1227 ,  H01G4/1236 ,  H01G4/30 ,  H10N30/8554

摘要： A multilayer ceramic electronic component includes an end surface of a second external electrode and an end surface of a fourth external electrode that face a mounting surface of a mounting substrate on which a first multilayer ceramic electronic component body and a second multilayer ceramic electronic component body are mounted. A first metal terminal is connected to the second external electrode, a second metal terminal is connected to the fourth external electrode, and a connection terminal is connected across a first external electrode and a third external electrode. An insulator is disposed between the first multilayer ceramic electronic component body and the second multilayer ceramic electronic component body.

公开(公告)号：US11818958B2

公开(公告)日：2023-11-14

申请号：US17034110

申请日：2020-09-28

申请人： SEIKO EPSON CORPORATION

发明人： Koichi Mizugaki

IPC分类号： H10N30/87 ,  H10N30/80 ,  H10N30/88 ,  H03H3/02 ,  H03H9/10

CPC分类号： H10N30/875 ,  H10N30/802 ,  H10N30/88 ,  H03H3/02 ,  H03H9/1021

摘要： A vibration device includes a semiconductor substrate having a first surface and a second surface, an integrated circuit disposed on the first surface, a first terminal which is disposed on the second surface and to which a substrate potential is applied, a second terminal which is disposed on the second surface and to which a potential different from the substrate potential is applied, a first through electrode which is configured to electrically couple the first terminal and the integrated circuit to each other, a second through electrode which is configured to electrically couple the second terminal and the integrated circuit to each other, a frame which has an insulating property, a vibration element disposed on the first surface, and a lid bonded to the first surface, wherein the first through electrode is located outside the frame, and the second through electrode is located inside the frame.

公开(公告)号：US11811335B2

公开(公告)日：2023-11-07

申请号：US17464248

申请日：2021-09-01

申请人： Magnecomp Corporation

发明人： Kuen Chee Ee ,  Peter Hahn ,  David Glaess ,  Keith A. Vanderlee

IPC分类号： H02N2/00 ,  G11B5/48 ,  H02N2/06 ,  H02N2/02 ,  H10N30/87

CPC分类号： H02N2/0085 ,  G11B5/483 ,  H02N2/028 ,  H02N2/065 ,  H10N30/875

摘要： An electrical connection structure for connecting a piezoelectric element and an electrical circuit to each other with a conductive adhesive is described. The electrical connection structure includes an epoxy, a conductive component surrounded by the epoxy, and a trace feature implemented on top of the electrical connection structure. At least one depression feature can be implemented on top of the electrical connection structure to constrain the epoxy and the at least one conductive component.

公开(公告)号：US11794185B2

公开(公告)日：2023-10-24

申请号：US16761948

申请日：2019-10-22

申请人： BOE Technology Group Co., Ltd.

发明人： Haixu Li

IPC分类号： B01L3/00 ,  G01N29/02 ,  F04B43/04 ,  H01L31/105 ,  H01L31/08 ,  H10N30/02 ,  H10N30/06 ,  H10N30/20 ,  H10N30/80 ,  H10N30/87 ,  H10N30/88 ,  H10N39/00

CPC分类号： B01L3/50273 ,  B01L3/502707 ,  F04B43/046 ,  G01N29/022 ,  H01L31/08 ,  H01L31/105 ,  H10N30/02 ,  H10N30/06 ,  H10N30/206 ,  H10N30/802 ,  H10N30/875 ,  H10N30/883 ,  H10N39/00 ,  B01L2200/12 ,  B01L2400/0436

摘要： A microfluidic substrate and a manufacture method thereof, and a microfluidic panel are provided. The microfluidic substrate includes a base substrate, an acoustic wave generation device, and a first switching circuit. The acoustic wave generation device is on the base substrate and configured to emit an acoustic wave to drive a liquid droplet to move over the microfluidic substrates, the acoustic wave generation devices includes an acoustic wave driving electrode and an acoustic wave generation layer, the first switching circuit is on the base substrate, and the first switching circuit is electrically connected to the acoustic wave driving electrode and is configured to transmit an acoustic wave driving signal to the acoustic wave driving electrode, and the acoustic wave driving electrode is configured to drive the acoustic wave generation layer to generate the acoustic wave under control of the acoustic wave driving signal.

公开(公告)号：US20230330767A1

公开(公告)日：2023-10-19

申请号：US18028810

申请日：2021-09-28

申请人： intellifast GmbH

发明人： Gert Höring

IPC分类号： B23K20/16 ,  B23K1/00 ,  G01L5/24

CPC分类号： B23K20/165 ,  B23K1/0006 ,  G01L5/24 ,  H10N30/875

摘要： The disclosure relates to a method for producing load-indicating connection components. A connection element (10) and a piezoelectric ultrasonic transducer (20) are provided and interconnected. The method comprises forming a layer structure on the surface (14) of the connection element (10). The layer structure comprises, in this order, proceeding from the surface (14) of the connection element (10): a first solder layer (16); a reactive layer (30); a second solder layer (22); and the piezoelectric ultrasonic transducer (20). The reactive layer (30) is designed for an exothermic reaction by activation with heat, with electromagnetic radiation or with electric current. Subsequently, the piezoelectric ultrasonic transducer (20) is pressed toward the connection element (10) in order to produce a specified contact pressure, and the reactive layer (30) is activated. The disclosure also relates to a load-indicating connection component of this type.

公开(公告)号：US20230327628A1

公开(公告)日：2023-10-12

申请号：US18331577

申请日：2023-06-08

申请人： Akoustis, Inc.

发明人： Dae Ho KIM ,  Frank Zhiquang Bi ,  Mary Winters ,  Abhay Kochhar ,  Emad Mehdizadeh ,  Rohan W. Houlden ,  Jeffrey B. Shealy

IPC分类号： H03H3/02 ,  H10N30/02 ,  H03H9/10 ,  H10N30/06 ,  H10N30/077 ,  H10N30/086 ,  H10N30/87 ,  H10N30/00 ,  H03H9/13 ,  H03H9/17 ,  H10N30/85 ,  H10N30/88 ,  H03H9/05 ,  H03H9/54 ,  H03H9/02

CPC分类号： H03H3/02 ,  H03H9/02015 ,  H03H9/02118 ,  H03H9/0523 ,  H03H9/105 ,  H03H9/13 ,  H03H9/173 ,  H03H9/175 ,  H03H9/177 ,  H03H9/547 ,  H10N30/02 ,  H10N30/06 ,  H10N30/077 ,  H10N30/086 ,  H10N30/10513 ,  H10N30/85 ,  H10N30/875 ,  H10N30/877 ,  H10N30/88 ,  H03H2003/021 ,  H03H2003/025 ,  Y10T29/42

摘要： A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. Patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the electrodes and a planarized support layer is deposited over the sacrificial layer. The device can include a dielectric protection layer (DPL) that protects the piezoelectric layer from etching processes that can produce rough surfaces and reduces parasitic capacitance around the perimeter of the resonator when the DPL’s dielectric constant is lower than that of the piezoelectric layer. The DPL can be configured between the top electrode and the piezoelectric layer, between the bottom electrode and the piezoelectric layer, or both.

公开(公告)号：US20230253949A1

公开(公告)日：2023-08-10

申请号：US18302878

申请日：2023-04-19

申请人： Soitec

发明人： Pascal Guenard ,  Ionut Radu

IPC分类号： H03H9/02 ,  H03H3/10 ,  H10N30/02 ,  H10N30/086 ,  H10N30/87 ,  H10N30/88 ,  H03H9/145

CPC分类号： H03H9/02834 ,  H03H3/10 ,  H03H9/02574 ,  H10N30/02 ,  H10N30/086 ,  H10N30/875 ,  H10N30/883 ,  H03H9/02984 ,  H03H9/145 ,  H03H9/64

摘要： A production method for a surface acoustic wave device comprises the following steps: a step of providing a piezoelectric substrate comprising a transducer arranged on the main front face; a step of depositing a dielectric encapsulation layer on the main front face of the piezoelectric substrate and on the transducer; and a step of assembling the dielectric encapsulation layer with the main front face of a support substrate having a coefficient of thermal expansion less than that of the piezoelectric substrate. In additional embodiments, a surface acoustic wave device comprises a layer of piezoelectric material equipped with a transducer on a main front face, arranged on a substrate support of which the coefficient of thermal expansion is less than that of the piezoelectric material. The transducer is arranged in a dielectric encapsulation layer, between the layer of piezoelectric material and the support substrate.