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    Physically unclonable function based on the random logical state of magnetoresistive random-access memory
    12.
    发明授权
    Physically unclonable function based on the random logical state of magnetoresistive random-access memory 有权
    基于磁阻随机存取存储器的随机逻辑状态的物理不可克隆功能

    公开(公告)号：US09214214B2

    公开(公告)日：2015-12-15

    申请号：US14072634

    申请日：2013-11-05

    Applicant: QUALCOMM Incorporated

    Inventor： Xiaochun Zhu ,  Steven M. Millendorf ,  Xu Guo ,  David M. Jacobson ,  Kangho Lee ,  Seung H. Kang ,  Matthew Michael Nowak

    IPC: G11C11/16 ,  H04L9/30 ,  H04L9/32

    CPC classification number: G11C11/1675 ,  G11C11/161 ,  G11C11/1695 ,  H04L9/0866 ,  H04L9/30 ,  H04L9/3278

    Abstract: One feature pertains to a method of implementing a physically unclonable function (PUF). The method includes exposing an array of magnetoresistive random access memory (MRAM) cells to an orthogonal external magnetic field. The MRAM cells are each configured to represent one of a first logical state and a second logical state, and the orthogonal external magnetic field is oriented in an orthogonal direction to an easy axis of a free layer of the MRAM cells to place the MRAM cells in a neutral logical state that is not the first logical state or the second logical state. The method further includes removing the orthogonal external magnetic field to place each of the MRAM cells of the array randomly in either the first logical state or the second logical state.

    Abstract translation: 一个特征涉及实现物理不可克隆功能（PUF）的方法。 该方法包括将磁阻随机存取存储器（MRAM）阵列阵列暴露于正交外部磁场。 MRAM单元各自被配置为表示第一逻辑状态和第二逻辑状态之一，并且正交外部磁场定向为与MRAM单元的自由层的容易轴正交的方向，以将MRAM单元置于 不是第一逻辑状态或第二逻辑状态的中性逻辑状态。 该方法还包括去除正交的外部磁场，将阵列的每个MRAM单元随机地置于第一逻辑状态或第二逻辑状态中。

    Integrated circuit module with lead frame micro-needles
    14.
    发明授权
    Integrated circuit module with lead frame micro-needles 有权
    集成电路模块，带引线框微针

    公开(公告)号：US09202705B1

    公开(公告)日：2015-12-01

    申请号：US14824345

    申请日：2015-08-12

    Applicant: QUALCOMM Incorporated

    Inventor： Kenneth Kaskoun ,  Rongtian Zhang ,  Matthew Michael Nowak ,  Shiqun Gu

    IPC: H01L21/44 ,  H01L21/48 ,  H01L21/306 ,  H01L23/495

    CPC classification number: H01L21/306 ,  A61B5/04 ,  A61B5/685 ,  A61B2562/12 ,  A61M37/0015 ,  A61M2037/0023 ,  A61M2037/0053 ,  H01L21/4842 ,  H01L21/565 ,  H01L23/49541 ,  H01L23/49548 ,  H01L2224/16225

    Abstract: An integrated circuit (IC) module with a lead frame micro-needle for a medical device, and methods of forming the IC module are described. The methods include forming a lead frame blank including a micro-needle integrally formed therein. The micro-needle may be bent beyond an initial lower side of the lead frame blank. The initial lower side may be joined with a protection layer such that the bent micro-needle is embedded in the protection layer, which may be removably attached to the initial lower side and the bent micro-needle. An IC component may be affixed to an upper side of the lead frame blank. The IC component and an upper surface of a core of the lead frame blank may be encapsulated with a molding compound forming a packaging of the IC module. Removal of the protection layer may expose the bent micro-needle projecting away from the packaging.

    Abstract translation: 描述了具有用于医疗装置的引线框微针的集成电路（IC）模块以及形成IC模块的方法。 所述方法包括形成包括一体地形成在其中的微针的引线框架坯料。 微针可以弯曲超过引线框架坯件的初始下侧。 初始下侧可以与保护层接合，使得弯曲的微针嵌入保护层中，保护层可以可拆卸地附接到初始下侧和弯曲的微针。 IC部件可以固定在引线框架坯料的上侧。 引线框架坯料的IC部件和芯的上表面可以用形成IC模块封装的模塑料封装。 去除保护层可能使弯曲的微针暴露在远离包装的位置。

    CONNECTOR PLACEMENT FOR A SUBSTRATE INTEGRATED WITH A TOROIDAL INDUCTOR
    17.
    发明申请
    CONNECTOR PLACEMENT FOR A SUBSTRATE INTEGRATED WITH A TOROIDAL INDUCTOR 审中-公开
    用于与电感电感器集成的基板的连接器放置

    公开(公告)号：US20150092314A1

    公开(公告)日：2015-04-02

    申请号：US14039192

    申请日：2013-09-27

    Applicant: QUALCOMM Incorporated

    Inventor： Daeik Daniel Kim ,  Young Kyu Song ,  Mario Francisco Velez ,  Jonghae Kim ,  Changhan Hobie Yun ,  Chengjie Zuo ,  Xiaonan Zhang ,  Ryan David Lane ,  Matthew Michael Nowak

    IPC: H01F27/29 ,  H01F41/04 ,  H01F27/40

    CPC classification number: H01F27/29 ,  H01F17/0006 ,  H01F27/40 ,  H01F2017/002 ,  H01F2017/0073 ,  Y10T29/4902

    Abstract: A system includes a first connector coupled to a first surface of a substrate. The first connector enables the system to be electrically coupled to a first device external to the substrate. The system includes a second connector coupled to a second surface of the substrate. The system also includes a plurality of conductive vias extending through the substrate from the first surface to the second surface. The plurality of conductive vias surrounds the first connector and the second connector. The plurality of conductive vias is electrically coupled together to form a toroidal inductor. A first lead of the toroidal inductor is electrically coupled to the first connector. A second lead of the toroidal inductor is electrically coupled to the second connector.

    Abstract translation: 系统包括耦合到衬底的第一表面的第一连接器。 第一连接器使得系统能够电耦合到衬底外部的第一器件。 该系统包括耦合到基板的第二表面的第二连接器。 该系统还包括从第一表面延伸穿过基底的多个导电通孔到第二表面。 多个导电通孔围绕第一连接器和第二连接器。 多个导电通孔电耦合在一起以形成环形电感器。 环形电感器的第一引线电耦合到第一连接器。 环形电感器的第二引线电耦合到第二连接器。

    ACTIVE THERMAL CONTROL FOR STACKED IC DEVICES
    18.
    发明申请
    ACTIVE THERMAL CONTROL FOR STACKED IC DEVICES 有权
    堆叠IC器件的主动热控制

    公开(公告)号：US20140043756A1

    公开(公告)日：2014-02-13

    申请号：US14056212

    申请日：2013-10-17

    Applicant: Qualcomm Incorporated

    Inventor： Shiqun Gu ,  Matthew Michael Nowak ,  Thomas Robert Toms

    IPC: H05K7/20

    CPC classification number: H05K7/20 ,  H01L23/38 ,  H01L25/0657 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06589 ,  H01L2924/00014 ,  H01L2224/05599

    Abstract: Thermal conductivity in a stacked IC device can be improved by constructing one or more active temperature control devices within the stacked IC device. In one embodiment, the control devices are thermal electric (TE) devices, such as Peltier devices. The TE devices can then be selectively controlled to remove or add heat, as necessary, to maintain the stacked IC device within a defined temperature range. The active temperature control elements can be P-N junctions created in the stacked IC device and can serve to move the heat laterally and/or vertically, as desired.

    Abstract translation: 可以通过在堆叠的IC器件内构造一个或多个有源温度控制器件来提高层叠IC器件中的导热性。 在一个实施例中，控制装置是诸如珀耳帖装置之类的热电（TE）装置。 然后可根据需要选择性地控制TE器件去除或加热，以将堆叠的IC器件保持在规定的温度范围内。 活性温度控制元件可以是在堆叠的IC器件中产生的P-N结，并且可以根据需要用于横向和/或垂直地移动热量。

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