公开(公告)号：US20190051756A1

公开(公告)日：2019-02-14

申请号：US16165316

申请日：2018-10-19

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ce Ning ,  Wei Yang

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/45 ,  H01L29/24 ,  H01L27/12 ,  G02F1/1362 ,  H01L21/4763 ,  H01L21/425 ,  H01L21/027 ,  H01L21/02 ,  G02F1/1368

CPC classification number: H01L29/7869 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/02565 ,  H01L21/0273 ,  H01L21/425 ,  H01L21/47635 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/24 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/786

Abstract: The present application discloses a thin film transistor including a base substrate; an active layer on the base substrate having a channel region, a source electrode contact region, and a drain electrode contact region; an etch stop layer on a side of the channel region distal to the base substrate covering the channel region; a source electrode on a side of the source electrode contact region distal to the base substrate; and a drain electrode on a side of the drain electrode contact region distal to the base substrate. A thickness of the active layer in the source electrode contact region and the drain electrode contact region is substantially the same as a combined thickness of the active layer in the channel region and the etch stop layer.

公开(公告)号：US20190012508A1

公开(公告)日：2019-01-10

申请号：US15745048

申请日：2017-09-05

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jianming Sun ,  Ce Ning ,  Wenlin Zhang

IPC: G06K9/00 ,  G02B6/132 ,  H01L21/44 ,  H01L21/82 ,  H04N5/225 ,  G02F1/1343 ,  H01L27/12 ,  H01L27/146

Abstract: An optical detector includes a stacked structure, an active layer, a gate insulating layer, and a gate electrode. The stacked structure includes a first electrode, a photoelectric conversion layer, a second electrode, a first insulating layer, and a third electrode. The active layer is electrically coupled to one of the first electrode or the second electrode, and electrically coupled to the third electrode. The gate insulating layer is arranged on the active layer. The gate electrode is arranged on the gate insulating layer.

公开(公告)号：US10141444B2

公开(公告)日：2018-11-27

申请号：US15156858

申请日：2016-05-17

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ke Wang ,  Ce Ning

IPC: H01L21/70 ,  H01L29/786 ,  H01L29/66 ,  H01L29/24 ,  H01L27/12 ,  H01L27/32

Abstract: An oxide thin-film transistor, an array substrate and methods for manufacturing the same, and a display device are provided. The method for manufacturing the oxide thin-film transistor includes: forming a pattern of an oxide semi-conductor layer above a base substrate; and illuminating, by a light source, two opposite boundary regions of the pattern of the oxide semi-conductor layer, where the illuminated two opposite boundary regions of the pattern of the oxide semi-conductor layer form ohmic contact layers and a region of the pattern of the oxide semi-conductor layer that is not illuminated forms a semi-conductor active layer; forming a source electrode and a drain electrode which are connected to the semi-conductor active layer via the ohmic contact layers respectively.

公开(公告)号：US20180166562A1

公开(公告)日：2018-06-14

申请号：US15554446

申请日：2017-01-20

Applicant: BOE Technology Group Co., Ltd.

Inventor： Ce Ning ,  Wei Yang ,  Hehe Hu

IPC: H01L29/66 ,  H01L29/786 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/426 ,  H01L21/4757

CPC classification number: H01L29/66969 ,  H01L21/425 ,  H01L21/426 ,  H01L21/44 ,  H01L21/465 ,  H01L21/4757 ,  H01L21/47635 ,  H01L21/77 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869

Abstract: A thin film transistor, a manufacturing method for an array substrate, the array substrate, and a display device are provided. The manufacturing method for a thin film transistor includes: forming a semiconductor layer; performing a modification treatment on a surface layer of a region of the semiconductor layer, so that the region of the semiconductor layer has a portion in a first direction perpendicular to the semiconductor layer formed as an etching blocking layer, portions of the semiconductor layer on both sides of the etching blocking layer in a second direction parallel to a surface of the semiconductor layer remaining unmodified; and forming a source electrode and a drain electrode on the semiconductor layer, the source electrode and the drain electrode being formed on both sides of a center line of the region perpendicular to the second direction, and spaced from each other in the second direction.

公开(公告)号：US09905580B2

公开(公告)日：2018-02-27

申请号：US14911213

申请日：2015-07-20

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ce Ning ,  Mingchao Li ,  Fangzhen Zhang

IPC: H01L29/82 ,  H01L27/12 ,  H01L29/786 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L27/124 ,  H01L27/1259 ,  H01L29/401 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/786 ,  H01L29/7869

Abstract: The present disclosure relates to the field of display technology and provides a method for manufacturing a TFT, the TFT, an array substrate including the TFT, and a display device. The method includes steps of forming a pattern of a gate electrode on 5 a base substrate, forming a gate insulation layer on the base substrate, and forming patterns of a source electrode and a drain electrode arranged above the gate insulation layer. The method further includes forming an antioxidation metal protection layer on a surface or surfaces of the gate electrode, the source electrode and/or the drain electrode.

公开(公告)号：US09705007B2

公开(公告)日：2017-07-11

申请号：US15097508

申请日：2016-04-13

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wei Yang ,  Woo Bong Lee ,  Ce Ning ,  Wenlin Zhang

IPC: H01L29/786 ,  H01L29/24 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02587 ,  H01L21/02631 ,  H01L21/02664 ,  H01L29/24 ,  H01L29/66969

Abstract: A thin film transistor and a fabrication method thereof, and a display device are provided. The thin film transistor comprises an active layer, wherein, a target oxide is formed at a portion of the active layer where an oxygen content is higher than oxygen contents of other portions of the active layer, and a carrier mobility of the target oxide is greater than that of other portions of the active layer.

公开(公告)号：US20160338189A1

公开(公告)日：2016-11-17

申请号：US14761986

申请日：2015-02-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ce Ning ,  Tao Gao

IPC: H05K1/02 ,  H05K3/46 ,  H05K3/00 ,  H05K1/03 ,  H05K3/06

CPC classification number: H05K1/028 ,  H05K1/0306 ,  H05K3/007 ,  H05K3/0097 ,  H05K3/06 ,  H05K3/16 ,  H05K3/467 ,  H05K2201/09781 ,  H05K2203/016 ,  H05K2203/167

Abstract: The present disclosure relates to the technical field of flexible substrate processing, and discloses a flexible substrate attaching method. The flexible substrate attaching method comprises the steps of: pre-fixing a flexible substrate on a carrier substrate with a first fixation structure; forming a thin film on the flexible substrate, and forming a pattern of the thin film via a patterning process; the pattern of the thin film contacting at least a part of the flexible substrate and at least a part of the carrier substrate simultaneously to play the function of consolidating the flexible substrate onto the carrier substrate. In this flexible substrate attaching method, a flexible substrate can be fixed on a carrier substrate in good effect and the flexible panel can be easily detached after the manufacture is completed. The present disclosure further provides a flexible substrate attachment structure.

Abstract translation: 本公开涉及柔性基板加工的技术领域，并且公开了一种柔性基板附着方法。 柔性基板安装方法包括以下步骤：利用第一固定结构将柔性基板预固定在载体基板上; 在柔性基板上形成薄膜，并通过图案化工艺形成薄膜图案; 所述薄膜的图案与所述柔性基板的至少一部分和所述载体基板的至少一部分同时接触，以发挥将所述柔性基板固结到所述载体基板上的功能。 在这种柔性基板的贴合方法中，柔性基板能够以良好的效果固定在载体基板上，并且在制造完成后可以容易地分离柔性面板。 本公开进一步提供了柔性基板附接结构。

公开(公告)号：US12233410B2

公开(公告)日：2025-02-25

申请号：US17292277

申请日：2020-01-23

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaochen Ma ,  Ce Ning ,  Chao Li ,  Jiayu He ,  Xueyuan Zhou ,  Xiao Zhang ,  Xin Gu ,  Zhengliang Li ,  Guangcai Yuan

IPC: B01L3/00

Abstract: A microfluidic channel backplane includes a base, and a plurality of microfluidic channels, a sample-adding channel and an enrichment channel that are disposed above the base. Each microfluidic channel of the plurality of microfluidic channels includes a first end and a second end. The sample-adding channel is communicated with first ends of the plurality of microfluidic channels. The enrichment channel includes a first enrichment sub-channel and a second enrichment sub-channel. The first enrichment sub-channel is communicated with second ends of the plurality of microfluidic channels, and one end of the second enrichment sub-channel is communicated with the first enrichment sub-channel.

公开(公告)号：US12213372B2

公开(公告)日：2025-01-28

申请号：US17732781

申请日：2022-04-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wei Yang ,  Guangcai Yuan ,  Ce Ning ,  Xinhong Lu ,  Tianmin Zhou ,  Xin Yang

IPC: H01L51/00 ,  H10K59/124 ,  H10K59/131 ,  H10K77/10

Abstract: The present disclosure relates to an OLED display panel and display device. The OLED display panel includes: a display area, a bending area and a bonding area for bonding a circuit board, wherein the display panel further includes: a base substrate; a first semiconductor pattern on the base substrate; a first insulating layer group on the first semiconductor pattern; a second semiconductor pattern on the first insulating layer group; a second insulating layer group on the second semiconductor pattern; first via holes in the first insulating layer group and the second insulating layer group; second via holes in the second insulating layer group, wherein the display panel further includes: a first groove located in the bending area and having a depth substantially identical to that of the first via holes; and a metal trace, connecting a trace in the display area to the circuit board.

公开(公告)号：US12183824B2

公开(公告)日：2024-12-31

申请号：US17611156

申请日：2021-01-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jie Huang ,  Jiayu He ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Fengjuan Liu ,  Nianqi Yao ,  Kun Zhao ,  Tianmin Zhou ,  Jiushi Wang ,  Zhongpeng Tian

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  G02F1/1368

Abstract: The present disclosure relates to the field of display technologies, and in particular to a thin film transistor and a method for manufacturing the same, an array substrate and a display device. An active layer of the thin film transistor includes at least two metal oxide semi-conductor layers, the at least two metal oxide semi-conductor layers include a channel layer and a first protection layer, and metals in the channel layer include tin, and at least one of indium, gallium and zinc. The first protection layer includes praseodymium used to absorb photo-generated electrons from at least one of the channel layer and the first protection layer which is under light irradiation and reduce a photo-generated current caused by the light irradiation.