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公开(公告)号：US12204196B2
公开(公告)日：2025-01-21
申请号：US17922094
申请日：2021-10-26
Inventor： Xipeng Wang , Wei Zhang , Xin Zhou , Chao Li , Jilei Gao , Benzhi Xu , Yonggang Zhang , Bin Li , Qi Liu
IPC: G02F1/1335 , G02F1/1339 , G02F1/1345 , G02F1/1362
Abstract: A display panel has a plurality of sub-pixel regions arranged in an array of a plurality of rows and a plurality of columns, and a light-shielding region that separates the sub-pixel regions and surrounds all the sub-pixel regions as a whole. The display panel includes: a first substrate; a light-shielding pattern layer located on the first substrate, the light-shielding pattern layer being located in the light-shielding region and covering part of the light-shielding region; a second substrate disposed opposite to the first substrate; and a light-shielding structure layer located on the second substrate, the light-shielding structure layer covering at least a region of the light-shielding region that is not covered by the light-shielding pattern layer.
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公开(公告)号：US12032254B2
公开(公告)日：2024-07-09
申请号：US17922466
申请日：2021-02-19
Inventor： Qi Liu , Wei Zhang , Zhenkun Yu , Benzhi Xu , Jilei Gao , Xipeng Wang , Yonggang Zhang , Bin Li , Chao Li
IPC: G02F1/1362
CPC classification number: G02F1/136286
Abstract: A display substrate, a display panel and a display apparatus. The display substrate including: a substrate having a display area; a plurality of sub-pixels arranged in an array and located in the display area of the substrate; and a plurality of data lines arranged in the display area of the substrate; the plurality of data lines extend in a column direction of the sub-pixels, and a column of sub-pixels are electrically connected with at least one of the plurality of data lines; and for at least one of the plurality of data lines, a side of an orthographic projection of the at least one of the plurality of data lines on the substrate facing orthographic projections of sub-pixels electrically connected with the at least one of the plurality of data lines has a plurality of first concave-convex structures.
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公开(公告)号：US11835825B2
公开(公告)日：2023-12-05
申请号：US17500233
申请日：2021-10-13
Inventor： Qi Liu , Wei Zhang , Xipeng Wang , Jilei Gao , Yonggang Zhang , Xin Zhou , Chao Li , Bin Li , Benzhi Xu
IPC: G02F1/1339 , G02F1/1362
CPC classification number: G02F1/13392 , G02F1/136209 , G02F1/136286
Abstract: The present disclosure provides a display panel, a manufacturing method thereof, and a display device. The display panel includes: a first substrate and a second substrate arranged opposite to each other, and a first spacer located between the first substrate and the second substrate, both ends of the first spacer are in contact with the first substrate and the second substrate respectively; a surface of the first substrate close to the second substrate includes a recess, and an end of the first spacer in contact with the first substrate is embedded in the recess.
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4.发明授权公开(公告)号：US11817460B2
公开(公告)日：2023-11-14
申请号：US17263748
申请日：2020-03-27
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Chao Luo , Feng Guan , Zhi Wang , Jianhua Du , Yang Lv , Zhaohui Qiang , Chao Li
IPC: H01L27/12 , H01L29/66 , H01L29/786
CPC classification number: H01L27/1237 , H01L27/1222 , H01L27/1285 , H01L29/66477 , H01L29/66765 , H01L29/78669 , H01L29/78678
Abstract: A thin film transistor includes a gate, a gate insulating layer, an active layer, an ionized amorphous silicon layer, a source and a drain. The gate insulating layer covers the gate. The active layer is disposed on a side of the gate insulating layer away from the gate. The ionized amorphous silicon layer is disposed on a side of the active layer away from the gate, and the ionized amorphous silicon layer is in contact with the gate insulating layer. The source and the drain are disposed on a side of the ionized amorphous silicon layer away from the gate insulating layer, and the source and the drain are coupled to the active layer through the ionized amorphous silicon layer.
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公开(公告)号：US11573003B2
公开(公告)日：2023-02-07
申请号：US17485126
申请日：2021-09-24
Inventor： Chao Li
Abstract: A light-transmitting assembly of a display device, a signal indicator, and the display device are provided in the embodiments of the present disclosure. The light-transmitting assembly of the display device includes: a light-transmitting adjustment member including a plurality of first patterns, a light transmittance of each first pattern is less than a light transmittance of a region of the light-transmitting adjustment member other than the first pattern, and each light-shielding area ratio of the first patterns is a ratio of a sum of areas of all the first patterns in any one region of the light-transmitting adjustment member to an area of the any one region.
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Patent Agency Ranking
公开(公告)号：US11251208B2
公开(公告)日：2022-02-15
申请号：US16642734
申请日：2019-03-18
Applicant: BOE Technology Group Co., Ltd.
Inventor： Chao Li , Jianhua Du , Feng Guan , Zhaohui Qiang , Zhi Wang , Yupeng Gao , Yang Lv
IPC: H01L27/144 , H01L27/12 , H01L31/0352 , H01L31/105 , H01L31/18
Abstract: A photosensor includes a base substrate; an insulating layer on the base substrate; and a photodiode including a semiconductor junction on a side of the insulating layer away from the base substrate. The semiconductor junction includes a first polarity semiconductor layer, an intrinsic semiconductor layer, and a second polarity semiconductor layer, stacked on the insulating layer. The second polarity semiconductor layer encapsulates a lateral surface of the intrinsic semiconductor layer.
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公开(公告)号：US20210151615A1
公开(公告)日：2021-05-20
申请号：US16819833
申请日：2020-03-16
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Jianhua Du , Chao Li
IPC: H01L31/032 , H01L31/0272 , H01L31/0216 , H01L31/20
Abstract: The embodiment of the application discloses a photoelectric sensor and a manufacturing method thereof, wherein the photoelectric sensor comprises: a light absorbing layer for absorbing incident light to generate a photocurrent, the light absorption layer comprises a first absorption layer and a second absorption layer stacked in the direction of incident light, the first absorption layer being an intrinsic semiconductor layer of the photoelectric sensor, the second absorption layer being made of a material having a higher photoelectric conversion efficiency than the first absorption layer, and the second absorption layer has a stripe structure arranged at intervals.
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公开(公告)号：US20210151476A1
公开(公告)日：2021-05-20
申请号：US16642734
申请日：2019-03-18
Applicant: BOE Technology Group Co., Ltd.
Inventor： Chao Li , Jianhua Du , Feng Guan , Zhaohui Qiang , Zhi Wang , Yupeng Gao , Yang Lv
IPC: H01L27/144 , H01L31/105 , H01L31/0352 , H01L27/12 , H01L31/18
Abstract: A photosensor includes a base substrate; an insulating layer on the base substrate; and a photodiode including a semiconductor junction on a side of the insulating layer away from the base substrate. The semiconductor junction includes a first polarity semiconductor layer, an intrinsic semiconductor layer, and a second polarity semiconductor layer, stacked on the insulating layer. The second polarity semiconductor layer encapsulates a lateral surface of the intrinsic semiconductor layer.
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公开(公告)号：US11251207B2
公开(公告)日：2022-02-15
申请号：US16846888
申请日：2020-04-13
Applicant: BOE Technology Group Co., Ltd.
Inventor： Yupeng Gao , Guangcai Yuan , Feng Guan , Zhi Wang , Jianhua Du , Zhaohui Qiang , Chao Li
IPC: H01L27/00 , H01L29/00 , H01L21/00 , H01L27/12 , H01L29/66 , H01L29/786 , H01L29/24 , H01L29/16 , H01L21/84
Abstract: The present disclosure discloses a method for preparing an array substrate, an array substrate and a display panel, wherein the method comprises: forming a buffer layer on a substrate in a first region and a second region, wherein the buffer layer has a groove located in the second region; forming a first indium oxide thin film on the buffer layer in the first region; forming a second indium oxide thin film in the groove; performing a reduction process on the second indium oxide thin film to obtain indium particles; forming an amorphous silicon thin film in the groove, and inducing the amorphous silicon of the amorphous silicon thin film to form microcrystalline silicon at a preset temperature by using the indium particles; and removing the indium particles in the microcrystalline silicon to form a microcrystalline silicon semiconductor layer of the microcrystalline silicon thin film transistor.
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公开(公告)号：US10761331B2
公开(公告)日：2020-09-01
申请号：US16214904
申请日：2018-12-10
Inventor： Chao Li , Wei Li , Yanfeng Li , Yanqing Chen , Ning Wang , Weida Qin , Pan Guo , Yongchao Wang , Haoyi Xin
Abstract: A display panel includes a base substrate, and a plurality of sub-pixels disposed on the base substrate and located at least in a left eye display area and a right eye display area of the display panel. The left eye display area and the right eye display area are arranged side by side. An area of the display panel outside the left eye display area and the right eye display area is a non-display area.
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