公开(公告)号：US11495623B2

公开(公告)日：2022-11-08

申请号：US16772272

申请日：2019-12-19

Applicant: BOE Technology Group Co., Ltd.

Inventor： Yanan Niu ,  Kuanjun Peng ,  Jiushi Wang ,  Zhanfeng Cao ,  Feng Zhang ,  Qi Yao ,  Wusheng Li ,  Feng Guan ,  Lei Chen ,  Jintao Peng ,  Tingting Zhou

IPC: H01L27/12

Abstract: The present disclosure provides a display substrate and a manufacturing method thereof, and a display device. In the display substrate of the present disclosure, a first transistor comprises a first gate electrode, a first electrode, a second electrode, and a first active layer; and a second transistor comprises a second gate electrode, a third electrode, a fourth electrode, and a second active layers, wherein the first active layer comprises a silicon material, the second active layer comprises an oxide semiconductor material, and wherein the third electrode and the first gate electrode are disposed in the same layer, and the fourth electrode and the first electrode, the second electrodes are disposed in the same layer.

公开(公告)号：US11469336B2

公开(公告)日：2022-10-11

申请号：US16958120

申请日：2020-01-17

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jianhua Du ,  Chao Li ,  Zhaohui Qiang ,  Yupeng Gao ,  Feng Guan ,  Rui Huang ,  Zhi Wang ,  Yang Lv ,  Chao Luo

IPC: H01L31/0224 ,  H01L31/0376 ,  H01L31/18 ,  H01L31/20

Abstract: The present disclosure relates to a photodiode, a method for preparing the same, and an electronic device. The photodiode includes: a first electrode layer and a semiconductor structure that are stacked, a surface of the semiconductor structure away from the first electrode layer having a first concave-convex structure; and a second electrode layer arranged on a surface of the semiconductor structure away from the first electrode layer, a surface of the second electrode layer away from the first electrode layer having a second concave-convex structure.

公开(公告)号：US11171159B2

公开(公告)日：2021-11-09

申请号：US16630657

申请日：2019-01-03

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yanan Niu ,  Jiushi Wang ,  Lei Chen ,  Hongwei Tian ,  Zhanfeng Cao ,  Feng Guan ,  Feng Zhang ,  Shi Shu ,  Kuanjun Peng ,  Yichi Zhang ,  Qi Qi

IPC: H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  H01L27/12 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786 ,  H01L27/32

Abstract: The present disclosure provides a display backplane and a method for manufacturing the same, a display panel, and a display device. The display backplane includes: a substrate; a first thin film transistor located on one side of the substrate; and a second thin film transistor located on the one side of the substrate, wherein: the first thin film transistor comprises a first active layer, the second thin film transistor comprises a second active layer, wherein the first active layer and the second active layer are located in a same layer, and a material of the first active layer is different from that of the second active layer.

公开(公告)号：US11063069B2

公开(公告)日：2021-07-13

申请号：US16577578

申请日：2019-09-20

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Feng Guan ,  Chen Xu ,  Zhi Wang ,  Liwei Liu ,  Lei Chen ,  Xueyong Wang ,  Yan Chen

IPC: H01L27/12 ,  H01L21/02

Abstract: A method for manufacturing a display substrate is provided to include: forming an amorphous silicon layer on a base substrate; irradiating at least part of the display region through a mask plate with a laser, to convert a portion of the amorphous silicon layer in the irradiated part of the display region corresponding to channel regions of active layers of transistors into polycrystalline silicon by a laser annealing process; irradiating at least part of the peripheral region with a laser, to convert the amorphous silicon layer in the irradiated part of the peripheral region into polycrystalline silicon; and forming the active layers of the transistors from the amorphous silicon layer which is converted to polycrystalline silicon by a patterning process.

公开(公告)号：US10998189B2

公开(公告)日：2021-05-04

申请号：US16569311

申请日：2019-09-12

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Feng Guan ,  Zhi Wang ,  Chen Xu

IPC: H01L21/02 ,  B23K26/06 ,  H01L21/306 ,  H01L23/544 ,  H01L27/12 ,  B23K26/354

Abstract: A laser annealing process of a drive backplane includes: providing a mask, which has a light transmission area; and sequentially moving the mask to cover different areas of an amorphous silicon layer of the drive backplane, and annealing the amorphous silicon layer exposed in the light transmission area to form a poly-silicon pattern.

公开(公告)号：US10437044B2

公开(公告)日：2019-10-08

申请号：US15500900

申请日：2016-04-25

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhen Liu ,  Feng Guan ,  Ming Zhu ,  Jikai Yao

IPC: G02B26/02 ,  G02B5/26 ,  G02B5/20

Abstract: Embodiments of the present disclosure provide a MEMS light valve, which includes: a fixed grating partitioned into first regions and second regions, which are arranged alternately, wherein the fixed grating comprises reflective units configured within the first regions for reflecting at least part of incident light and the second regions do not reflect light; and a movable grating located at a side of the fixed grating to which outside light is incident and movable in a plane where the movable grating is located, wherein the movable grating is capable of block part or all of the reflective units during moving. The embodiments of the present disclosure are adopted to manufacture of a MEMS light valve and a display device including the MEMS light valve.

公开(公告)号：US12272754B2

公开(公告)日：2025-04-08

申请号：US17761549

申请日：2021-05-18

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu He ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Jie Huang ,  Nianqi Yao ,  Zhi Wang ,  Feng Guan

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/417 ,  H01L29/66

Abstract: A thin film transistor, a manufacturing method thereof, a display substrate, and a display device are provided. The thin film transistor includes: a substrate, an active layer, a gate, a source and a drain. The active layer is arranged on the substrate and formed as a grid, including silicon nanowires extending along a first direction, the active layer includes source and drain regions oppositely arranged along the first direction, and a channel region located therebetween. The gate is arranged on the substrate, and an orthographic projection of the gate onto the substrate overlaps with orthographic projections for silicon nanowires in the channel region onto the substrate. The source and drain are arranged on the substrate, the source contacts silicon nanowires in the source region, and the drain contacts silicon nanowires in the drain region.

公开(公告)号：US11251207B2

公开(公告)日：2022-02-15

申请号：US16846888

申请日：2020-04-13

Applicant: BOE Technology Group Co., Ltd.

Inventor： Yupeng Gao ,  Guangcai Yuan ,  Feng Guan ,  Zhi Wang ,  Jianhua Du ,  Zhaohui Qiang ,  Chao Li

IPC: H01L27/00 ,  H01L29/00 ,  H01L21/00 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L29/24 ,  H01L29/16 ,  H01L21/84

Abstract: The present disclosure discloses a method for preparing an array substrate, an array substrate and a display panel, wherein the method comprises: forming a buffer layer on a substrate in a first region and a second region, wherein the buffer layer has a groove located in the second region; forming a first indium oxide thin film on the buffer layer in the first region; forming a second indium oxide thin film in the groove; performing a reduction process on the second indium oxide thin film to obtain indium particles; forming an amorphous silicon thin film in the groove, and inducing the amorphous silicon of the amorphous silicon thin film to form microcrystalline silicon at a preset temperature by using the indium particles; and removing the indium particles in the microcrystalline silicon to form a microcrystalline silicon semiconductor layer of the microcrystalline silicon thin film transistor.

公开(公告)号：US11106179B2

公开(公告)日：2021-08-31

申请号：US15746766

申请日：2017-07-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jifeng Tan ,  Xue Dong ,  Xiaochuan Chen ,  Wei Wang ,  Xin Gu ,  Feng Guan ,  Meili Wang

IPC: G02B5/18 ,  G03H1/08 ,  H04N13/324 ,  H04N13/312 ,  G03H1/22 ,  G02B5/20 ,  G02B27/42 ,  G02B30/27 ,  G02F1/13 ,  G03H1/02 ,  H04N13/302

Abstract: A holographic display panel comprises a plurality of display units, each display unit comprises at least two adjacent pixels, each pixel comprises: a plurality of sub-pixels; and a plurality of phase plates. Diffractive angles of light coming out of the phase plates corresponding to the sub-pixels in a same pixel are the same, a diffractive angle of first light coming out of the phase plates corresponding to a first pixel in one of the display units is different from a diffractive angle of second light coming out of the phase plates corresponding to a second pixel that is different from the first pixel but in the same display unit, and a reverse extension line of the first light and a reverse extension line of the second light intersect at an image plane position.

公开(公告)号：US20210225975A1

公开(公告)日：2021-07-22

申请号：US16765232

申请日：2019-11-26

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yanan Niu ,  Jiushi Wang ,  Zhanfeng Cao ,  Qi Yao ,  Feng Zhang ,  Wusheng Li ,  Feng Guan ,  Lei Chen ,  Hongwei Tian

IPC: H01L27/32

Abstract: A display substrate is provided. The display substrate includes a substrate (1), a first transistor (2) and a second transistor (3) on the substrate (1), directions of intrinsic threshold voltage shifts of the first transistor (2) and the second transistor (3) being opposite; and a shift adjustment structure (4) on the substrate (1). The shift adjustment structure (4) may be configured to input adjustment signals to the first transistor (2) and the second transistor (3) respectively to make threshold voltages of the first transistor (2) and the second transistor (3) shift in directions opposite to the directions of their intrinsic threshold voltage shifts respectively.