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    MICRO-NANO FLUIDIC SUBSTRATE, CHIP, PREPARATION METHOD AND SYSTEM
    3.
    发明公开
    MICRO-NANO FLUIDIC SUBSTRATE, CHIP, PREPARATION METHOD AND SYSTEM 审中-公开

    公开(公告)号：US20240261785A1

    公开(公告)日：2024-08-08

    申请号：US18018795

    申请日：2021-12-31

    Applicant: BOE Technology Group Co., Ltd.

    Inventor： Feifei Li ,  Bolin Fan ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Nianqi Yao ,  Jiayu He ,  Jie Huang ,  Kun Zhao

    IPC: B01L3/00

    CPC classification number: B01L3/502761 ,  B01L2200/0647 ,  B01L2200/12 ,  B01L2300/0645 ,  B01L2300/0848 ,  B01L2400/0415

    Abstract: Provided is a micro-nano fluidic substrate, a chip, a preparation method, and a system. The micro-nano fluidic substrate includes: a base; an electrode layer located on the base, the electrode layer includes a first electrode, a second electrode, and a control electrode; and a film layer located on the electrode layer and far away from the base, the film layer includes a groove layer, a nano-channel and a micro-channel, the groove layer includes a first groove, the nano-channel is located in the first groove, an orthographic projection of the nano-channel on the base at least partially coincides with an orthographic projection of the control electrode on the base, and the micro-channel is in communication with the nano-channel, the micro-channel includes a first micro-channel and a second micro-channel, and the first micro-channel is in communication with the first electrode, the second micro-channel is in communication with the second electrode.

    Semiconductor Substrate Manufacturing Method and Semiconductor Substrate
    4.
    发明申请
    Semiconductor Substrate Manufacturing Method and Semiconductor Substrate 有权

    公开(公告)号：US20230006070A1

    公开(公告)日：2023-01-05

    申请号：US17782035

    申请日：2021-05-27

    Applicant: BOE Technology Group Co., Ltd.

    Inventor： Jie Huang ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Jiayu He ,  Nianqi Yao ,  Kun Zhao ,  Feng Qu ,  Xiaochun Xu

    IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12

    Abstract: A semiconductor substrate manufacturing method and a semiconductor substrate. The manufacturing method includes: forming a first semiconductor layer on the base substrate at a first temperature with a first oxide semiconductor material; forming the second semiconductor layer directly on the first semiconductor layer with a second oxide semiconductor material; and performing a patterning process such that the first semiconductor layer and the second semiconductor layer are respectively patterned into a seed layer and a first channel layer. Both the first oxide semiconductor material and the second oxide semiconductor material are capable of forming crystalline phases at a second temperature, the second temperature is less than or equal to 40° C., and the first temperature is greater than or equal to 100° C.

    Array substrate, flat panel detector, and method for manufacturing array substrate
    8.
    发明授权
    Array substrate, flat panel detector, and method for manufacturing array substrate 有权

    公开(公告)号：US12068355B2

    公开(公告)日：2024-08-20

    申请号：US17410677

    申请日：2021-08-24

    Applicant: BOE Technology Group Co., Ltd.

    Inventor： Jiayu He ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Jie Huang ,  Nianqi Yao ,  Kun Zhao

    IPC: H01L27/146 ,  H01L27/12

    CPC classification number: H01L27/14643 ,  H01L27/1214 ,  H01L27/14689

    Abstract: An array substrate includes a substrate, the array substrate includes a display region and a detection region. And the detection region includes a thin film transistor located on the substrate and a photodiode located on one side of the thin film transistor away from the substrate, and the array substrate further includes a first inorganic protective layer, an organic protective layer and a second inorganic protective layer located between the thin film transistor and the photodiode. And the first inorganic protective layer, the organic protective layer and the second inorganic protective layer are stacked in sequence in a direction away from the substrate, and an orthographic projection of the photodiode on the substrate is within the range of the orthographic projection of the organic protective layer on the substrate.

    Thin Film Transistor and Manufacturing Method Thereof, and Array Substrate and Electronic Device
    10.
    发明申请
    Thin Film Transistor and Manufacturing Method Thereof, and Array Substrate and Electronic Device 有权

    公开(公告)号：US20230015871A1

    公开(公告)日：2023-01-19

    申请号：US17780877

    申请日：2021-05-27

    Applicant: BOE Technology Group Co., Ltd.

    Inventor： Jie Huang ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Jiayu He ,  Nianqi Yao ,  Feng Qu ,  Xiaochun Xu

    IPC: H01L29/786 ,  H01L27/12

    Abstract: A thin film transistor, a manufacturing method thereof, an array substrate and an electronic device arc provided. The thin film transistor includes an active layer including multiple oxide layers which includes a channel layer, a transition layer and a first barrier layer, the channel layer is an layer with a highest carrier mobility, the channel layer is a crystalline or amorphous oxide layer, the transition layer is in direct contact with the channel layer, the first barrier layer is an outermost oxide layer, the first barrier layer and the transition layer are both crystalline oxide layers; a crystallization degree of the first barrier layer and a crystallization degree of the transition layer are greater than a crystallization degree of the channel layer, and a band gap of the first barrier layer and a band gap of the transition layer are larger than a band gap of the channel layer.

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