公开(公告)号：US12183824B2

公开(公告)日：2024-12-31

申请号：US17611156

申请日：2021-01-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jie Huang ,  Jiayu He ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Fengjuan Liu ,  Nianqi Yao ,  Kun Zhao ,  Tianmin Zhou ,  Jiushi Wang ,  Zhongpeng Tian

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  G02F1/1368

Abstract: The present disclosure relates to the field of display technologies, and in particular to a thin film transistor and a method for manufacturing the same, an array substrate and a display device. An active layer of the thin film transistor includes at least two metal oxide semi-conductor layers, the at least two metal oxide semi-conductor layers include a channel layer and a first protection layer, and metals in the channel layer include tin, and at least one of indium, gallium and zinc. The first protection layer includes praseodymium used to absorb photo-generated electrons from at least one of the channel layer and the first protection layer which is under light irradiation and reduce a photo-generated current caused by the light irradiation.

公开(公告)号：US20240194161A1

公开(公告)日：2024-06-13

申请号：US17908359

申请日：2021-08-31

Applicant: BOE Technology Group Co., Ltd.

Inventor： Lizhong Wang ,  Guangcai Yuan ,  Ce Ning ,  Hehe Hu ,  Nianqi Yao ,  Xin Xie ,  Yifang Huang ,  Liping Lei ,  Chen Xu

IPC: G09G3/36

CPC classification number: G09G3/3677 ,  G09G2300/0408 ,  G09G2300/0426 ,  G09G2310/0286

Abstract: A display substrate and a display panel are provided, the display substrate includes a first gate driver circuit and a second gate driver circuit that are respectively arranged on a first side and a second side of a display region; the first gate driver circuit includes a plurality of first shift register units arranged in a first direction, each first shift register unit includes a first thin film transistor; the second gate driver circuit includes a plurality of second shift register units arranged in the first direction, each second shift register unit includes a second thin film transistor having the same function as the first thin film transistor; an average turn-on current of at least one first thin film transistor is Ion1, and an average turn-on current of at least one second thin film transistor is Ion2, Ion1>Ion2.

公开(公告)号：US10818694B2

公开(公告)日：2020-10-27

申请号：US16166356

申请日：2018-10-22

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wei Yang ,  Hehe Hu ,  Xinhong Lu

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L27/32

Abstract: The present disclosure relates to array substrate, preparation method thereof and display panel. An array substrate comprises: a first thin film transistor and a second thin film transistor over a substrate; wherein the first thin film transistor comprises a first portion of a first insulating layer, the first insulating layer comprises a first recess corresponding to the second thin film transistor, and the second thin film transistor is located in the first recess; and wherein a thickness of a second portion of the first insulating layer, which is below the bottom of the first recess, is smaller than that of the first portion of the first insulating layer.

公开(公告)号：US10236393B2

公开(公告)日：2019-03-19

申请号：US15542298

申请日：2016-09-23

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hehe Hu

IPC: H01L29/00 ,  H01L29/786 ,  H01L29/423 ,  G09G3/20 ,  H01L27/12 ,  H01L29/66

Abstract: A TFT, a method for driving TFT, an array substrate, and a display device are disclosed. The TFT comprises a first gate on a base plate, an active layer insulated from the first gate, a source and a drain, and a second gate arranged on a side of the active layer away from the first gate and insulated from the active layer. The second gate comprises at least two sub-gates. An orthographic projection of each sub-gate overlaps that of a channel region. The first gate is capable of controlling the complete channel region, and the second gate is capable of controlling a portion of the channel region. The first and second gates maintain an energy band of the channel region at a relatively stable state, and thus maintain stable switching characteristics. This increases reliability and electrical performance of TFT.

公开(公告)号：US09588426B2

公开(公告)日：2017-03-07

申请号：US14428143

申请日：2014-08-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jianguo Wang ,  Hehe Hu

IPC: G03F7/075 ,  G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/038

CPC classification number: G03F7/0757 ,  G03F7/0382 ,  G03F7/0755 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32

Abstract: Disclosed is a negative photoresist comprising 1 to 90 parts of hydroxyl-containing or carboxyl-containing film-forming resin, 1 to 99 parts of silicon-containing vinyl ether monomer, 0.1 to 15 parts by weigh of a crosslinking agent, and an organic solvent capable of dissolving the aforesaid substances. Disclosed is also methods of preparing and using the negative photoresist.

Abstract translation: 公开了含有1〜90份含羟基或含羧基的成膜树脂，1〜99份含硅乙烯基醚单体，0.1〜15重量份交联剂和有机溶剂的负性光致抗蚀剂 能够溶解上述物质。 还公开了制备和使用负性光致抗蚀剂的方法。

公开(公告)号：US12106728B2

公开(公告)日：2024-10-01

申请号：US17908359

申请日：2021-08-31

Applicant: BOE Technology Group Co., Ltd.

Inventor： Lizhong Wang ,  Guangcai Yuan ,  Ce Ning ,  Hehe Hu ,  Nianqi Yao ,  Xin Xie ,  Yifang Huang ,  Liping Lei ,  Chen Xu

IPC: G09G3/36

CPC classification number: G09G3/3677 ,  G09G2300/0408 ,  G09G2300/0426 ,  G09G2310/0286

Abstract: A display substrate and a display panel are provided, the display substrate includes a first gate driver circuit and a second gate driver circuit that are respectively arranged on a first side and a second side of a display region; the first gate driver circuit includes a plurality of first shift register units arranged in a first direction, each first shift register unit includes a first thin film transistor; the second gate driver circuit includes a plurality of second shift register units arranged in the first direction, each second shift register unit includes a second thin film transistor having the same function as the first thin film transistor; an average turn-on current of at least one first thin film transistor is Ion1, and an average turn-on current of at least one second thin film transistor is Ion2, Ion1>Ion2.

公开(公告)号：US11534755B2

公开(公告)日：2022-12-27

申请号：US16755911

申请日：2019-04-16

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ce Ning ,  Xiaochen Ma ,  Hehe Hu ,  Guangcai Yuan ,  Xin Gu

IPC: B01L3/00

Abstract: The present disclosure relates to a micro-channel device. The micro-channel device may include a micro-channel structure and a semiconductor junction. The micro-channel structure may include a base layer, a plurality of rails distributed on the base layer at intervals, and a cover layer comprising a plurality of columns. The cover layer and the base layer are configured to form a plurality of micro-channels. The semiconductor junction may include a P-type semiconductor layer, an intrinsic semiconductor layer and a N-type semiconductor layer stacked in a first direction.

公开(公告)号：US11372451B2

公开(公告)日：2022-06-28

申请号：US16900647

申请日：2020-06-12

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jiayu He ,  Xue Liu ,  Hehe Hu ,  Zhengliang Li

IPC: G09F9/30 ,  G06F1/16 ,  G06F1/18

Abstract: A display substrate, a display device, and a method of forming a display substrate are provided. The display substrate includes: a flexible base substrate and a plurality of pixel islands arranged on the flexible base substrate, where the plurality of pixel islands are arranged in an array, two adjacent pixel islands are connected through an island bridge, display units are arranged on the pixel islands, the display units on the pixel islands are electrically connected through an inter-island connection line arranged on the island bridge, a region outside the pixel islands and the island bridge is a hollow area, and axes of four island bridges around the hollow area are arranged as a parallelogram.

公开(公告)号：US11360357B2

公开(公告)日：2022-06-14

申请号：US16639786

申请日：2019-01-03

Applicant: BEIJING BOE DISPLAY TECHNOLOGY CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wenjun Xiao ,  Shijun Wang ,  Hehe Hu ,  Haoliang Zheng ,  Xi Chen ,  Xiaochuan Chen ,  Guangcai Yuan

IPC: G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/12

Abstract: A display substrate and a manufacturing method thereof and a display device are disclosed. The manufacturing method of the display substrate includes: forming a first display electrode; and forming a thin film transistor, which includes forming a semiconductor layer; The first display electrode and the semiconductor layer are in one same layer, and a step of forming the first display electrode is performed before performing a step of forming the semiconductor layer.

公开(公告)号：US11245008B2

公开(公告)日：2022-02-08

申请号：US16642522

申请日：2019-07-24

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaochen Ma ,  Guangcai Yuan ,  Ce Ning ,  Hehe Hu ,  Xin Gu

IPC: H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  G01N27/414 ,  H01L29/786

Abstract: The present application provides a TFT, a manufacturing method thereof, and a sensor. The TFT includes a substrate, and a source, a drain and an active layer on the substrate. The active layer includes a microchannel, and the thin film transistor is configured to detect a sample in the microchannel. When a sample to be detected enters the microchannel, the electron distribution in the active layer would be affected, which causes fluctuations in the TFT characteristics. By detecting such fluctuations, detecting the composition and property of the liquid to be detected may be achieved. Moreover, by virtue of the microchannel, the sample may be precisely controlled. The impact of the external environment may be reduced and the detection accuracy can be enhanced. Continuous monitoring instead of one-time detection of the sample may be achieved and the sample detection efficiency may be improved.