公开(公告)号：US12041825B2

公开(公告)日：2024-07-16

申请号：US17429935

申请日：2020-11-13

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu He ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Jie Huang ,  Nianqi Yao ,  Xue Liu

IPC: H10K59/13 ,  H10K59/124 ,  H10K59/126 ,  H10K59/38 ,  H10K71/00 ,  H10K59/12

CPC classification number: H10K59/13 ,  H10K59/124 ,  H10K59/126 ,  H10K59/38 ,  H10K71/00 ,  H10K59/1201

Abstract: An organic electroluminescent display substrate is provided, which includes a base substrate, and a light-emitting unit and a light-sensing unit arranged on the base substrate, wherein the light-sensing unit is arranged on a light-emitting side of the light-emitting unit, and configured for sensing an intensity of light emitted from the light-emitting unit; a first planarization layer is arranged between the light-sensing unit and the light-emitting unit; the light-sensing unit comprises a first thin film transistor and a photosensitive sensor arranged sequentially in that order in a direction away from the base substrate, and a second planarization layer is arranged between the photosensitive sensor and the first thin film transistor. A display panel, a display device and a method for manufacturing the organic electroluminescent display substrate are further provided.

公开(公告)号：US11372451B2

公开(公告)日：2022-06-28

申请号：US16900647

申请日：2020-06-12

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jiayu He ,  Xue Liu ,  Hehe Hu ,  Zhengliang Li

IPC: G09F9/30 ,  G06F1/16 ,  G06F1/18

Abstract: A display substrate, a display device, and a method of forming a display substrate are provided. The display substrate includes: a flexible base substrate and a plurality of pixel islands arranged on the flexible base substrate, where the plurality of pixel islands are arranged in an array, two adjacent pixel islands are connected through an island bridge, display units are arranged on the pixel islands, the display units on the pixel islands are electrically connected through an inter-island connection line arranged on the island bridge, a region outside the pixel islands and the island bridge is a hollow area, and axes of four island bridges around the hollow area are arranged as a parallelogram.

公开(公告)号：US12233410B2

公开(公告)日：2025-02-25

申请号：US17292277

申请日：2020-01-23

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaochen Ma ,  Ce Ning ,  Chao Li ,  Jiayu He ,  Xueyuan Zhou ,  Xiao Zhang ,  Xin Gu ,  Zhengliang Li ,  Guangcai Yuan

IPC: B01L3/00

Abstract: A microfluidic channel backplane includes a base, and a plurality of microfluidic channels, a sample-adding channel and an enrichment channel that are disposed above the base. Each microfluidic channel of the plurality of microfluidic channels includes a first end and a second end. The sample-adding channel is communicated with first ends of the plurality of microfluidic channels. The enrichment channel includes a first enrichment sub-channel and a second enrichment sub-channel. The first enrichment sub-channel is communicated with second ends of the plurality of microfluidic channels, and one end of the second enrichment sub-channel is communicated with the first enrichment sub-channel.

公开(公告)号：US12183824B2

公开(公告)日：2024-12-31

申请号：US17611156

申请日：2021-01-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jie Huang ,  Jiayu He ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Fengjuan Liu ,  Nianqi Yao ,  Kun Zhao ,  Tianmin Zhou ,  Jiushi Wang ,  Zhongpeng Tian

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  G02F1/1368

Abstract: The present disclosure relates to the field of display technologies, and in particular to a thin film transistor and a method for manufacturing the same, an array substrate and a display device. An active layer of the thin film transistor includes at least two metal oxide semi-conductor layers, the at least two metal oxide semi-conductor layers include a channel layer and a first protection layer, and metals in the channel layer include tin, and at least one of indium, gallium and zinc. The first protection layer includes praseodymium used to absorb photo-generated electrons from at least one of the channel layer and the first protection layer which is under light irradiation and reduce a photo-generated current caused by the light irradiation.

公开(公告)号：US12068355B2

公开(公告)日：2024-08-20

申请号：US17410677

申请日：2021-08-24

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu He ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Jie Huang ,  Nianqi Yao ,  Kun Zhao

IPC: H01L27/146 ,  H01L27/12

CPC classification number: H01L27/14643 ,  H01L27/1214 ,  H01L27/14689

Abstract: An array substrate includes a substrate, the array substrate includes a display region and a detection region. And the detection region includes a thin film transistor located on the substrate and a photodiode located on one side of the thin film transistor away from the substrate, and the array substrate further includes a first inorganic protective layer, an organic protective layer and a second inorganic protective layer located between the thin film transistor and the photodiode. And the first inorganic protective layer, the organic protective layer and the second inorganic protective layer are stacked in sequence in a direction away from the substrate, and an orthographic projection of the photodiode on the substrate is within the range of the orthographic projection of the organic protective layer on the substrate.

公开(公告)号：US20230091604A1

公开(公告)日：2023-03-23

申请号：US17611156

申请日：2021-01-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jie Huang ,  Jiayu He ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Fengjuan Liu ,  Nianqi Yao ,  Kun Zhao ,  Tianmin Zhou ,  Jiushi Wang ,  Zhongpeng Tian

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

Abstract: The present disclosure relates to the field of display technologies, and in particular to a thin film transistor and a method for manufacturing the same, an array substrate and a display device. An active layer of the thin film transistor includes at least two metal oxide semi-conductor layers, the at least two metal oxide semi-conductor layers include a channel layer and a first protection layer, and metals in the channel layer include tin, and at least one of indium, gallium and zinc. The first protection layer includes praseodymium used to absorb photo-generated electrons from at least one of the channel layer and the first protection layer which is under light irradiation and reduce a photo-generated current caused by the light irradiation.

公开(公告)号：US20230015871A1

公开(公告)日：2023-01-19

申请号：US17780877

申请日：2021-05-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jie Huang ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Jiayu He ,  Nianqi Yao ,  Feng Qu ,  Xiaochun Xu

IPC: H01L29/786 ,  H01L27/12

Abstract: A thin film transistor, a manufacturing method thereof, an array substrate and an electronic device arc provided. The thin film transistor includes an active layer including multiple oxide layers which includes a channel layer, a transition layer and a first barrier layer, the channel layer is an layer with a highest carrier mobility, the channel layer is a crystalline or amorphous oxide layer, the transition layer is in direct contact with the channel layer, the first barrier layer is an outermost oxide layer, the first barrier layer and the transition layer are both crystalline oxide layers; a crystallization degree of the first barrier layer and a crystallization degree of the transition layer are greater than a crystallization degree of the channel layer, and a band gap of the first barrier layer and a band gap of the transition layer are larger than a band gap of the channel layer.

公开(公告)号：US20210217784A1

公开(公告)日：2021-07-15

申请号：US16761335

申请日：2019-11-21

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhengliang Li ,  Jiayu He ,  Hehe Hu ,  Wenlin Zhang ,  Song Liu ,  Xiaochen Ma ,  Nianqi Yao ,  Jie Huang

IPC: H01L27/144

Abstract: An array substrate, a method for manufacturing an array substrate, and a display panel are provided. The array substrate includes: a base substrate; a thin film transistor on the base substrate; and a PIN diode on a side of the thin film transistor away from the base substrate, in a direction running away the base substrate from the thin film transistor, the PIN diode including a first electrical conduction type semiconductor layer and an intrinsic semiconductor layer and a second electrical conduction type semiconductor layer stacked in sequence, wherein a material from which the first electrical conduction type semiconductor layer is made includes one or more of following materials: metal oxide, metal sulfide, metal selenide, metal nitride, metal phosphide, or metal arsenide.

公开(公告)号：US20240261785A1

公开(公告)日：2024-08-08

申请号：US18018795

申请日：2021-12-31

Applicant: BOE Technology Group Co., Ltd.

Inventor： Feifei Li ,  Bolin Fan ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Nianqi Yao ,  Jiayu He ,  Jie Huang ,  Kun Zhao

IPC: B01L3/00

CPC classification number: B01L3/502761 ,  B01L2200/0647 ,  B01L2200/12 ,  B01L2300/0645 ,  B01L2300/0848 ,  B01L2400/0415

Abstract: Provided is a micro-nano fluidic substrate, a chip, a preparation method, and a system. The micro-nano fluidic substrate includes: a base; an electrode layer located on the base, the electrode layer includes a first electrode, a second electrode, and a control electrode; and a film layer located on the electrode layer and far away from the base, the film layer includes a groove layer, a nano-channel and a micro-channel, the groove layer includes a first groove, the nano-channel is located in the first groove, an orthographic projection of the nano-channel on the base at least partially coincides with an orthographic projection of the control electrode on the base, and the micro-channel is in communication with the nano-channel, the micro-channel includes a first micro-channel and a second micro-channel, and the first micro-channel is in communication with the first electrode, the second micro-channel is in communication with the second electrode.

公开(公告)号：US20240186379A1

公开(公告)日：2024-06-06

申请号：US17798347

申请日：2021-10-22

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hehe Hu ,  Fengjuan Liu ,  Guangcai Yuan ,  Jiayu He ,  Ce Ning ,  Zhengliang Li ,  Kun Zhao

IPC: H01L29/10 ,  H01L21/385 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/1041 ,  H01L21/385 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

Abstract: Provided is a method for manufacturing a metal-oxide thin-film transistor (TFT). The method includes: forming, on a base substrate, an active layer including a metal oxide semiconductor, and a functional layer laminated on the active layer and containing a lanthanide element; and annealing the active layer and the functional layer, such that the lanthanide element in the functional layer is diffused into the active layer.