公开(公告)号：US11183142B2

公开(公告)日：2021-11-23

申请号：US16493429

申请日：2019-05-06

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Fengjuan Liu ,  Ying Han

IPC: H01L29/04 ,  G09G5/00 ,  H01L33/14

Abstract: The present disclosure relates to a thin film transistor. The thin film transistor may include a substrate, a source electrode on the substrate, a drain electrode on the substrate, a gate on the substrate, and an active layer on the substrate. The source electrode may include a first teeth portion. The drain electrode may include a second teeth portion. The gate may include a third teeth portion. The active layer may include a plurality of channel regions. The first teeth portion, the second teeth portion, the third teeth portion, and the active layer form a plurality of sub-thin film transistors connected in parallel. The center sub-thin film transistor has a channel region having a smallest width-to-length ratio among the plurality of sub-thin film transistors.

公开(公告)号：US10833107B2

公开(公告)日：2020-11-10

申请号：US16322266

申请日：2018-05-04

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Fengjuan Liu ,  Youngsuk Song ,  Hongda Sun

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L29/417

Abstract: Provided are a thin film transistor and manufacturing method therefor, and an array substrate, and a display device. The method includes: forming a source electrode and a drain electrode on a substrate; forming a photoresist layer at the side of the source electrode and the drain electrode away from the substrate; performing exposure and developing treatment on the photoresist layer so as to obtain a photoresist pattern; successively forming a semiconductor layer, a first insulation layer and a conducting layer in sequence on at the side of the photoresist pattern away from the substrate; and removing the photoresist pattern so as to obtain an active layer a gate insulation layer and a gate electrode.

公开(公告)号：US10141449B2

公开(公告)日：2018-11-27

申请号：US15037610

申请日：2015-09-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Meili Wang ,  Hongda Sun ,  Fengjuan Liu ,  Lungpao Hsin

IPC: H01L29/786 ,  H01L29/10 ,  H01L29/225 ,  H01L29/227 ,  H01L29/24 ,  H01L27/12

Abstract: The embodiments of the present invention provides an oxide TFT, an array substrate and a display device, an oxide channel layer of the oxide TFT comprises a front channel oxide layer and a back channel oxide layer, a conduction band bottom of the back channel oxide layer being higher than a conduction band bottom of the front channel oxide layer, and a band gap of the back channel oxide layer being larger than a band gap of the front channel oxide layer. In the oxide TFT, the array substrate and the display device provided in the present invention, it is possible to accumulate a large number of electrons through the potential difference formed between oxide channel layers of a multilayer structure so as to increase the carrier concentration in the oxide channel layers to achieve the purpose of improving TFT mobility without damaging TFT stability.

公开(公告)号：US09793413B2

公开(公告)日：2017-10-17

申请号：US14771526

申请日：2014-10-30

Applicant: BOE Technology Group Co., Ltd.

Inventor： Li Zhang ,  Meili Wang ,  Fengjuan Liu

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L27/32

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/786

Abstract: The present disclosure provides a method for producing a thin film transistor. The method includes the steps of: forming a protective layer on an active layer of the thin film transistor and patterning the protective layer along with the active layer when the active layer is deposited; depositing a source and drain electrode layer and patterning it by a dry etching to form a source electrode and a drain electrode; and etching or passivating the protective layer located in a back channel region of the source electrode and the drain electrode. In addition, the present disclosure also discloses a thin film transistor produced by the above method, and an array substrate.

公开(公告)号：US09379146B2

公开(公告)日：2016-06-28

申请号：US14429247

申请日：2014-07-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Li Zhang ,  Liangchen Yan ,  Fengjuan Liu

IPC: H01L21/768 ,  H01L21/283 ,  H01L27/12 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L27/1262 ,  H01L21/283 ,  H01L21/76802 ,  H01L21/76885 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66742

Abstract: A method for manufacturing an array substrate and a method for forming a through hole are provided. The method for manufacturing the array substrate comprise: coating photoresist in an insulating layer through-hole region on a substrate; depositing an insulating layer on the substrate provided with the photoresist in the insulating layer through-hole region; and stripping off the photoresist in the insulating layer through-hole region to form an insulating layer through hole. The manufacturing method simplifies the process of forming the insulating layer through hole.

Abstract translation: 提供一种阵列基板的制造方法及形成通孔的方法。 制造阵列基板的方法包括：在基板上的绝缘层通孔区域中涂覆光致抗蚀剂; 在设置有所述光致抗蚀剂的所述基板上的所述绝缘层通孔区域内淀积绝缘层; 并剥离绝缘层通孔区域中的光致抗蚀剂以形成绝缘层通孔。 该制造方法简化了形成绝缘层通孔的工艺。

公开(公告)号：US20160011158A1

公开(公告)日：2016-01-14

申请号：US14574841

申请日：2014-12-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaodi Liu ,  Cuili Gai ,  Fengjuan Liu ,  Gang Wang

IPC: G01N33/00 ,  H05B3/03 ,  H01L29/26 ,  H01L29/22 ,  H01L29/786

CPC classification number: G01N33/0027 ,  G01N33/0062 ,  H01L29/22 ,  H01L29/26 ,  H01L29/786

Abstract: Embodiments of the present invention provide a gas detection sensor, a display panel, and a display device. The gas detection sensor comprises: a gas sensitive part; two detection electrodes electrically connected with each other through the gas sensitive part; and a protective layer enclosing the gas sensitive part and the detection electrodes. When one of the detection electrodes is applied with a detecting signal, the detecting signal is output from the other detection electrode after being modulated by the gas sensitive part, and a voltage signal output by the other detection electrode is related to a nature of the outside air to which the gas sensitive part is exposed, thereby a detection on air quality may be achieved through detecting the voltage signal output from the other detection electrode, such that a simply structured and portable gas detection sensor can be realized.

Abstract translation: 本发明的实施例提供一种气体检测传感器，显示面板和显示装置。 气体检测传感器包括：气体敏感部件; 两个检测电极通过气体敏感部分彼此电连接; 以及包围气体敏感部分和检测电极的保护层。 当检测电极中的一个被施加检测信号时，在被气体敏感部分调制之后，从另一检测电极输出检测信号，并且由另一个检测电极输出的电压信号与外部的性质有关 可以通过检测从其他检测电极输出的电压信号来实现空气质量的检测，从而可以实现简单结构化的便携式气体检测传感器。

公开(公告)号：US11711946B2

公开(公告)日：2023-07-25

申请号：US17052575

申请日：2020-04-01

Applicant: BOE Technology Group Co., Ltd.

Inventor： Hongda Sun ,  Qing Dai ,  Fengjuan Liu

IPC: H01L27/32 ,  H10K59/122 ,  H10K71/00 ,  H10K71/13 ,  H10K59/12 ,  H10K102/00

CPC classification number: H10K59/122 ,  H10K71/00 ,  H10K71/135 ,  H10K59/1201 ,  H10K2102/351

Abstract: The present disclosure provides a substrate comprising a printing area, wherein the printing area comprises a flat surface and a plurality of separation structures projecting from the flat surface, wherein the plurality of separation structures divide the printing area into a plurality of micro-areas, and in each of the micro-areas, a circular region containing no separation structure has a maximum diameter between 5 μm and 10 μm. The present disclosure further provides a light emitting device comprising the substrate and a method for manufacturing the substrate.

公开(公告)号：US11557638B2

公开(公告)日：2023-01-17

申请号：US16908913

申请日：2020-06-23

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hongda Sun ,  Fengjuan Liu ,  Wei Liu ,  Jianye Zhang

IPC: H01L27/14 ,  H01L27/32 ,  H01L27/12

Abstract: An array substrate, a display panel including the array substrate, and a fabrication method of the array substrate are provided. The array substrate includes a base substrate, a light-shielding portion, a thin-film transistor and a capacitor. The light-shielding portion is formed on a first surface of the base substrate. The thin-film transistor is formed on a side of the light-shielding portion away from the base substrate, and includes an active layer. The capacitor is formed on the first surface of the base substrate, and includes a first capacitive electrode and a second capacitive electrode. The first capacitive electrode and the second capacitive electrode are at least partially arranged opposite to each other in a direction perpendicular to the first surface of the base substrate. The first capacitive electrode is provided in a same layer as the light-shielding portion.

公开(公告)号：US11335893B2

公开(公告)日：2022-05-17

申请号：US16955195

申请日：2019-12-19

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ying Han ,  Wei Liu ,  Jianye Zhang ,  Fengjuan Liu ,  Xing Zhang

IPC: H01L51/56 ,  H01L27/32 ,  H01L51/00 ,  H01L51/52

Abstract: A manufacturing method of OLED microcavity structure is provided. The manufacturing method includes: forming a reflective anode on a substrate; forming a transparent conductive film layer having a thickness corresponding to a required pixel on the reflective anode; patterning the transparent conductive film layer and the reflective anode with a pixel mask corresponding to the required pixel to form a pattern of the required pixel; and repeating the above steps on a resultant structure surface according to display requirements until a pixel display structure required by a display device is obtained.

公开(公告)号：US11302822B2

公开(公告)日：2022-04-12

申请号：US16618941

申请日：2019-05-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Fengjuan Liu ,  Donghui Yu

IPC: H01L29/786 ,  H01L27/32 ,  H01L29/66 ,  H01L51/56

Abstract: A thin film transistor and a fabrication method thereof, an array substrate and a fabrication method thereof are disclosed. The thin film transistor includes: a base substrate; a gate electrode, an active layer, a source electrode and a drain electrode on the base substrate; and the thin film transistor further includes: a light-shielding portion between the active layer and the base substrate, the light-shielding portion includes a groove, and the active layer is in the groove.