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公开(公告)号：US12238969B2
公开(公告)日：2025-02-25
申请号：US17615835
申请日：2021-02-26
Inventor： Tongshang Su , Bin Zhou , Jun Cheng , Qinghe Wang , Yongchao Huang , Dacheng Zhang , Liangchen Yan
IPC: H10K59/121 , H10K59/12 , H10K59/122 , H10K59/35 , H10K71/00
Abstract: The present disclosure provides a display substrate, a method for manufacturing the same, and a display device. The display substrate includes a drive circuit layer disposed on a base substrate and a light emitting structure layer disposed on a side of the drive circuit layer away from the base substrate. The light emitting structure layer includes an anode, an organic light emitting layer, a cathode, and an auxiliary electrode. The organic light emitting layer is respectively connected to the anode and the cathode, and the cathode is connected to the auxiliary electrode; in a plane parallel to the display substrate, an edge of the auxiliary electrode is provided with a structure depressed towards a center of the auxiliary electrode.
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公开(公告)号：US11903262B2
公开(公告)日：2024-02-13
申请号：US17342596
申请日：2021-06-09
Inventor： Wei Li , Bin Zhou , Shengping Du , Qinghua Guo , Tao Sun , Wei Song , Liangchen Yan
IPC: H10K59/122 , H10K71/00
CPC classification number: H10K59/122 , H10K71/00
Abstract: A display panel includes a substrate, and a pixel defining layer and a cathode layer that are laminated on the substrate. The pixel defining layer includes a plurality of strip-shaped first pixel defining structures and a plurality of strip-shaped second pixel defining structures. A slope angle of the second pixel defining structure is greater than a slope angle of the first pixel defining structure, and the second pixel defining structure is configured to separate portions of the cathode layer on two sides of the second pixel defining structure.
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公开(公告)号：US11569307B2
公开(公告)日：2023-01-31
申请号：US17043962
申请日：2020-04-22
Inventor： Jun Liu , Liangchen Yan , Bin Zhou , Wei Li , Tongshang Su , Yongchao Huang , Biao Luo , Xuehai Gui
Abstract: An array substrate is provided, including a base substrate, a semiconductor active layer, a gate electrode, a source electrode, and a drain electrode that are sequentially provided, and further including a first insulating layer, a second insulating layer, a third insulating layer, at least one first via, and at least one second via. Each first via penetrates through the third insulating layer, and in each pixel unit with plural chromatic color resists, each first via is between adjacent two chromatic color resists and filled by one of the adjacent two chromatic color resists. Each second via penetrates through the second insulating layer, the at least one second via is in one-to-one correspondence with the at least one first via, each second via is filled by a chromatic color resist having a same color as that of the chromatic color resist in the corresponding first via.
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公开(公告)号：US11462602B2
公开(公告)日：2022-10-04
申请号：US16905899
申请日：2020-06-18
Inventor： Yongchao Huang , Jun Cheng , Dongfang Wang , Jun Liu , Leilei Cheng , Liangchen Yan
Abstract: An array substrate, a manufacturing method thereof, and a display device are provided. The array substrate includes: a base substrate; a first signal line on the base substrate; a first buffer layer provided on the base substrate and covering the first signal line; a second signal line on a side of the first buffer layer facing away from the base substrate; a first insulating layer provided on the base substrate and covering the second signal line; and a thin film transistor on a side of the first insulating layer facing away from the base substrate, the thin film transistor including a gate electrode, a source electrode and a drain electrode. A thickness of the first signal line is greater than that of the gate electrode, and a thickness of the second signal line is greater than that of the source electrode or the drain electrode.
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公开(公告)号：US20220093893A1
公开(公告)日：2022-03-24
申请号：US17336523
申请日：2021-06-02
Inventor： Yang Zhang , Ning Liu , Bin Zhou , Leilei Cheng , Liangchen Yan , Jun Liu , Qinghe Wang , Tao Sun , Zhiwen Luo
Abstract: A method for manufacturing a display panel includes: sequentially forming a conductive pattern, a light-emitting layer and a cathode layer on a substrate. The conductive pattern is formed by a one-time patterning process, and includes an auxiliary electrode layer. In a direction parallel to the substrate, both the first protective electrode and the second protective electrode in the auxiliary electrode layer extend over the metal electrode, a second orthographic projection of the second protective electrode on the substrate is within a first orthographic projection of the first protective electrode on the substrate, and an outer boundary of the second orthographic projection is staggered from an outer boundary of the first orthographic projection. The cathode layer is in contact with the first protective electrode and a sidewall of the metal electrode.
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Patent Agency Ranking
6.发明授权公开(公告)号：US11011437B2
公开(公告)日：2021-05-18
申请号：US16452952
申请日：2019-06-26
Inventor： Yingbin Hu , Ce Zhao , Yuankui Ding , Wei Song , Jun Wang , Yang Zhang , Wei Li , Liangchen Yan
IPC: H01L21/66 , G03F7/20 , H01L21/44 , H01L21/467 , H01L29/66 , H01L29/786
Abstract: The present disclosure provides a method for determining a width-to-length ratio of a channel region of a thin film transistor (TFT). The method includes: S1, setting an initial width-to-length ratio of the channel region; S2, manufacturing a TFT by using a mask plate according to the initial width-to-length ratio; S3, testing the TFT manufactured according to the initial width-to-length ratio; S4, determining whether or not the test result satisfies a predetermined condition, performing S5 if the test result satisfies the predetermined condition, and performing S6 if the test result does not satisfy the predetermined condition; S5, determining the initial width-to-length ratio as the width-to-length ratio of the channel region of the TFT; S6, changing the value of the initial width-to-length ratio, adjusting a position of the mask plate according to the changed initial width-to-length ratio, and performing S2 to S4 again.
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公开(公告)号：US10971523B2
公开(公告)日：2021-04-06
申请号：US16405126
申请日：2019-05-07
Inventor： Tongshang Su , Dongfang Wang , Jun Cheng , Jun Liu , Qinghe Wang , Guangyao Li , Liangchen Yan
Abstract: The present disclosure provides a pixel array and a fabrication method thereof. The pixel array includes a plurality of gate lines and a plurality of data lines which are arranged intersected and insulated and a pixel unit disposed at a position where each of the plurality of gate lines and each of the plurality of data lines are intersected. The pixel unit includes a thin film transistor (TFT). The width-to-length ratios of channels of the TFTs are sequentially increased in such a manner that the width-to-length ratios of the channels of the TFTs in the pixel units positioned in a same row (and/or a same column) are sequentially increased along a scanning direction of the gate line coupled to gate electrodes of the TFTs in the same row (and/or along a data writing direction of the data line coupled to the source electrodes of the TFTs in the same column).
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公开(公告)号：US10707286B2
公开(公告)日：2020-07-07
申请号：US16417031
申请日：2019-05-20
Inventor： Qinghe Wang , Dongfang Wang , Tongshang Su , Rui Peng , Leilei Cheng , Yang Zhang , Jun Wang , Guangyao Li , Liangchen Yan , Guangcai Yuan
Abstract: An OLED device and a method of preparing the same are provided, the OLED device including: a substrate; a first source electrode on the substrate, the first source electrode having a first side surface; a first insulating layer on the first source electrode, the first insulating layer having a second side surface intersecting with an upper surface of the first source electrode and the first side surface of the first source electrode, with at least one of an angle between the first side surface and the upper surface of the substrate and an angle between the second side surface and the upper surface of the substrate being an acute angle; an active layer on the substrate, the active layer covering the first side surface and the second side surface; a gate insulating layer on the active layer; an anode on the gate insulating layer; a light emitting functional layer on the anode; and a cathode on the light emitting functional layer, the cathode including a first drain region covering the first insulating layer and being in contact with the active layer.
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9.发明申请公开(公告)号：US20200168744A1
公开(公告)日：2020-05-28
申请号：US16410823
申请日：2019-05-13
Inventor： Yingbin Hu , Ce Zhao , Yuankui Ding , Jun Wang , Jun Liu , Guangyao Li , Yongchao Huang , Wei Li , Liangchen Yan
IPC: H01L29/786 , H01L29/66
Abstract: A method for manufacturing a thin film transistor includes forming a light shielding layer and a buffer layer covering the light shielding layer on a substrate. The method includes forming an active layer including a peripheral region and a channel region. The method includes forming a gate insulating layer covering the channel region and forming a contact hole exposing the light shielding layer. The method includes forming a source region and a drain region disposed on both sides of the channel region. The method includes forming an electrode layer including a gate electrode, a source electrode and a drain electrode spaced apart one another. The method includes forming a dielectric layer covering the gate electrode, the source electrode, the drain electrode and the buffer layer.
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公开(公告)号：US20200098797A1
公开(公告)日：2020-03-26
申请号：US16399508
申请日：2019-04-30
IPC: H01L27/12 , H01L21/3213 , H01L21/311
Abstract: A display substrate and a method of preparing the same, and a display device are provided, the method including: providing a substrate; forming a switching thin film transistor precursor and a driving thin film transistor precursor on the substrate, each including a semiconductor layer, a gate insulating material layer and a gate metallic layer stacked sequentially above the substrate; forming a photoresist layer above the switching thin film transistor precursor and the driving thin film transistor precursor, and forming an etching mask from the photoresist layer, a first portion of the etching mask at the switching thin film transistor precursor and a second portion of the etching mask at the driving thin film transistor precursor having different shapes; and forming a switching thin film transistor and a driving thin film transistor, by etching processing the switching thin film transistor precursor and the driving thin film transistor precursor with the etching mask.
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