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公开(公告)号：US09905583B2
公开(公告)日：2018-02-27
申请号：US15121294
申请日：2015-11-17
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Li Zhang , Liangchen Yan , Jiangbo Chen
IPC: H01L27/12
CPC classification number: H01L27/124 , G02F1/136286 , H01L27/1262 , H01L27/3279
Abstract: The present invention provides an array substrate and a manufacturing method thereof, and a display apparatus. The array substrate comprises a gate layer, a gate insulating layer, an active layer, a source and drain layer, a scanning line and a signal line formed on a substrate, the signal line is provided in a same layer as the gate layer, the scanning line is provided in a same layer as the source and drain layer, the gate insulating layer is provided between the gate layer, the signal line and the active layer. The array substrate further comprises a first through hole and a second through hole penetrating through the gate insulating layer, the signal line is connected to the source and drain layer via the first through hole, and the scanning line is connected to the gate layer via the second through hole.
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公开(公告)号：US20170005198A1
公开(公告)日：2017-01-05
申请号：US14771526
申请日：2014-10-30
Applicant: BOE Technology Group Co., Ltd.
Inventor： Li Zhang , Meili Wang , Fengjuan Liu
IPC: H01L29/786 , H01L27/12 , H01L29/66
CPC classification number: H01L29/7869 , H01L27/1225 , H01L27/3262 , H01L29/66969 , H01L29/786
Abstract: The present disclosure provides a method for producing a thin film transistor. The method includes the steps of: forming a protective layer on an active layer of the thin film transistor and patterning the protective layer along with the active layer when the active layer is deposited; depositing a source and drain electrode layer and patterning it by a dry etching to form a source electrode and a drain electrode; and etching or passivating the protective layer located in a back channel region of the source electrode and the drain electrode. In addition, the present disclosure also discloses a thin film transistor produced by the above method, and an array substrate.
Abstract translation: 本公开提供了一种制造薄膜晶体管的方法。 该方法包括以下步骤：在薄膜晶体管的有源层上形成保护层，并且当活性层沉积时，与活性层一起构图保护层; 沉积源极和漏极电极层并通过干蚀刻对其进行构图以形成源电极和漏电极; 以及蚀刻或钝化位于源电极和漏电极的背沟道区域中的保护层。 此外，本公开还公开了通过上述方法制造的薄膜晶体管和阵列基板。
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公开(公告)号：US10381428B2
公开(公告)日：2019-08-13
申请号：US14893325
申请日：2015-04-17
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Dongfang Wang , Hongda Sun , Li Zhang
Abstract: An array substrate, a manufacture method thereof, and a display device are provided. The array substrate includes a first electrode (12), a second electrode (15); a light-emitting functional layer (13) located between the first electrode (12) and the second electrode (15); and an organic planar layer (14). The first electrode (12) is formed on the organic planar layer (14). The first electrode (12) includes metal electrode or metal alloy electrode. An oxide conductive layer (16) is further formed between the organic planar layer (14) and the first electrode (12).
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4.发明申请公开(公告)号：US20180239061A1
公开(公告)日：2018-08-23
申请号：US15961100
申请日：2018-04-24
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Dongfang Wang , Meili Wang , Li Zhang
IPC: G02B1/113 , G02B1/12 , G02F1/1335 , H01L51/52 , H01L31/054
CPC classification number: G02B1/113 , G02B1/118 , G02B1/12 , G02F1/133502 , G02F1/133526 , G02F2201/38 , H01L31/0543 , H01L51/5275 , H01L51/5281 , Y02E10/52
Abstract: The present application discloses a method of fabricating an anti-reflective film, comprising forming a zinc oxynitride layer on a substrate; annealing the zinc oxynitride layer; and etching the surface of the zinc oxynitride layer with an etching solution to form a micro lenses layer comprising a plurality of micro lenses on surface.
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公开(公告)号：US09881985B2
公开(公告)日：2018-01-30
申请号：US13878905
申请日：2012-10-10
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Yanzhao Li , Gang Wang , Woobong Lee , Li Zhang
CPC classification number: H01L27/3276 , H01L27/1225 , H01L27/3248 , H01L51/5206 , H01L51/5221 , H01L51/5234 , H01L51/5271 , H01L51/56 , H01L2227/323 , H01L2251/305 , H01L2251/5323 , H01L2251/5353
Abstract: Embodiments of the invention disclose an OLED device, an AMOLED display device and a method for manufacturing the AMOLED display device. the AMOLED display device comprises a TFT active layer, a pixel electrode layer and an OLED device; the OLED device comprises a cathode layer and a functional layer, and the pixel electrode layer serves as the anode layer of the OLED device; alternatively, the OLED device comprises an anode layer and a functional layer, and the pixel electrode layer serves as the cathode layer of the OLED device. Moreover, the TFT active layer and the pixel electrode layer are formed from a same IGZO film by a patterning process.
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Patent Agency Ranking
公开(公告)号：US09711580B2
公开(公告)日：2017-07-18
申请号：US15091774
申请日：2016-04-06
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Li Zhang
CPC classification number: H01L27/3262 , H01L27/12 , H01L27/1222 , H01L29/41733 , H01L29/42384 , H01L29/78642 , H01L29/78648 , H01L29/78681 , H01L29/7869 , H01L29/78696 , H01L51/102 , H01L51/105 , H01L51/5212 , H01L2251/306 , H01L2251/308
Abstract: A thin film transistor, an array substrate and manufacturing method thereof, and a display device are provided. The thin film transistor includes an active layer, a source electrode, a drain electrode, and a first gate electrode, the first gate electrode is shaped in a ring. The active layer includes a first portion, a second portion and a third portion for connecting the first portion and the second portion. The first portion and the second portion are disposed horizontally, and connected to the source electrode and the drain electrode, respectively. The third portion is disposed obliquely, and has a channel provided thereon. At least one part of the channel is located on an inner side of the first gate electrode. The thin film transistor can be used in a display device.
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公开(公告)号：US10477716B2
公开(公告)日：2019-11-12
申请号：US14429495
申请日：2014-06-20
Inventor： Li Zhang , Cheng Zhang
Abstract: A portable display device includes a display element provided with a main screen thereon, the portable display device further includes a secondary screen capable of being incorporated with the main screen. By providing a secondary screen, a display region of the portable display device can be extended as required, thereby allowing to run more applications to satisfy user's demands. And at the same time, the drawing structure can extend the display region in a convenient and steady manner.
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8.发明授权公开(公告)号：US09960188B2
公开(公告)日：2018-05-01
申请号：US15038227
申请日：2015-12-10
Applicant: BOE TECHNOLOGY GROUP CO., LTD
Inventor： Li Zhang
IPC: H01L27/12 , H01L29/786 , H01L29/49 , H01L29/66
CPC classification number: H01L27/1225 , H01L27/124 , H01L29/41733 , H01L29/42384 , H01L29/4908 , H01L29/66742 , H01L29/66969 , H01L29/78642
Abstract: A thin film transistor comprises a source over a substrate; a first insulation layer having a source contact through-hole corresponding to a position of the source over the source; an active layer electrically connecting with the source through the source contact through-hole over the etching stop layer; a second insulation layer having a drain contact through-hole exposing a portion of the active layer over the active layer; and a drain electrically connecting with the active layer through the drain contact through-hole over the second insulation layer.
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公开(公告)号：US09793413B2
公开(公告)日：2017-10-17
申请号：US14771526
申请日：2014-10-30
Applicant: BOE Technology Group Co., Ltd.
Inventor： Li Zhang , Meili Wang , Fengjuan Liu
IPC: H01L29/786 , H01L27/12 , H01L29/66 , H01L27/32
CPC classification number: H01L29/7869 , H01L27/1225 , H01L27/3262 , H01L29/66969 , H01L29/786
Abstract: The present disclosure provides a method for producing a thin film transistor. The method includes the steps of: forming a protective layer on an active layer of the thin film transistor and patterning the protective layer along with the active layer when the active layer is deposited; depositing a source and drain electrode layer and patterning it by a dry etching to form a source electrode and a drain electrode; and etching or passivating the protective layer located in a back channel region of the source electrode and the drain electrode. In addition, the present disclosure also discloses a thin film transistor produced by the above method, and an array substrate.
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公开(公告)号：US20170278058A1
公开(公告)日：2017-09-28
申请号：US15510937
申请日：2016-01-05
Inventor： Li Zhang
IPC: G06Q10/08
CPC classification number: G06Q10/087 , G06Q10/00 , G06Q10/08
Abstract: The present disclosure proposes an item management device and an item management method. The item management device includes a master management unit and one or more slave management units. Each of the one or more slave management units is provided on a corresponding item, so as to uniquely identify the corresponding item. The master management unit is configured to record information for the respective slave management units and/or information for the items corresponding to the respective slave management units.
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