公开(公告)号：US12284882B2

公开(公告)日：2025-04-22

申请号：US17419389

申请日：2020-09-22

Applicant: Chengdu BOE Optoelectronics Technology Co., Ltd. ,  BOE Technology Group Co., Ltd.

Inventor： Gang Wang ,  Kai Zhang ,  Tsanghong Wang ,  Erlong Song ,  Xingrui Cai

IPC: H10K59/126 ,  H10K59/121 ,  H10K59/131 ,  H10K71/00 ,  H10K59/12

Abstract: Embodiments of the present disclosure disclose an array substrate and a manufacturing method thereof, a display panel and a display device. The array substrate includes a substrate; a first metal layer located on the substrate and including a luminous control signal line; a second metal layer located on one side, departing from the substrate, of the first metal layer and including an anode overlap electrode, where the anode overlap electrode and the luminous control signal line have a first overlapping area; and a shielding structure located between the first metal layer and the second metal layer and mutually insulated from the first metal layer and the second metal layer, wherein the orthographic projection of the shielding structure on the substrate at least partially covers the orthographic projection of the first overlapping area on the substrate; and the shielding structure is coupled to a fixed potential.

公开(公告)号：US12277912B2

公开(公告)日：2025-04-15

申请号：US17907944

申请日：2021-09-23

Applicant: CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Gang Wang ,  Kai Zhang ,  Kunyan Shi ,  Erlong Song ,  Hailong Yan ,  Dongjie Wu ,  Yafei Chen

IPC: G09G3/3275 ,  G09G3/3266 ,  H10K59/121 ,  H10K59/131

Abstract: The present disclosure provides a display substrate and a display device. The display substrate includes a base substrate and a signal line film layer arranged on the base substrate; the signal line film layer includes: a first conductive layer, a second conductive layer and a conductive connection layer, the conductive connection layer is arranged at a different layer from each of the first conductive layer and the second conductive layer, and an orthographic projection of the conductive connection layer on the base substrate at least partially overlaps an orthographic projection of the first conductive layer on the base substrate, and the orthographic projection of the conductive connection layer on the base substrate at least partially overlaps an orthographic projection of the second conductive layer on the base substrate, the conductive connection layer is respectively coupled to the first conductive layer and the second conductive connection layer.

公开(公告)号：US12190775B2

公开(公告)日：2025-01-07

申请号：US18273201

申请日：2022-07-08

Applicant: Chengdu BOE Optoelectronics Technology Co., Ltd. ,  BOE Technology Group Co., Ltd.

Inventor： Xinyu Wei ,  Kai Zhang ,  Qiang Fu ,  Gang Wang ,  Erlong Song ,  Hongmei Fan ,  Kunyan Shi

IPC: G09G3/20 ,  G09G3/3225 ,  G09G3/3233 ,  G09G3/3258 ,  H10K59/131

Abstract: A pixel circuit and a driving method therefor, a display substrate, and a display apparatus. The pixel circuit includes a driving sub circuit, a data writing sub circuit, a first light-emitting control sub circuit, a first reset sub circuit, and a bias sub circuit; the first reset sub circuit is connected to a first node and configured to write a first reset voltage to the first node in response to a first reset control signal; and the bias sub circuit is connected to a second node and configured to write a reference voltage to the second node in response to a bias control signal, thereby turning on the driving sub circuit.

公开(公告)号：US20240153428A1

公开(公告)日：2024-05-09

申请号：US18273201

申请日：2022-07-08

Applicant: Chengdu BOE Optoelectronics Technology Co., Ltd. ,  BOE Technology Group Co., Ltd.

Inventor： Xinyu Wei ,  Kai Zhang ,  Qiang Fu ,  Gang Wang ,  Erlong Song ,  Hongmei Fan ,  Kunyan Shi

IPC: G09G3/20 ,  G09G3/3233

CPC classification number: G09G3/2007 ,  G09G3/3233 ,  G09G2300/0408 ,  G09G2300/0819 ,  G09G2300/0852 ,  G09G2310/08 ,  G09G2320/0247 ,  G09G2320/0252 ,  G09G2320/0257 ,  G09G2320/0626

Abstract: A pixel circuit and a driving method therefor, a display substrate, and a display apparatus. The pixel circuit includes a driving sub circuit, a data writing sub circuit, a first light-emitting control sub circuit, a first reset sub circuit, and a bias sub circuit; the first reset sub circuit is connected to a first node and configured to write a first reset voltage to the first node in response to a first reset control signal; and the bias sub circuit is connected to a second node and configured to write a reference voltage to the second node in response to a bias control signal, thereby turning on the driving sub circuit.

公开(公告)号：US10483294B2

公开(公告)日：2019-11-19

申请号：US14908652

申请日：2015-09-18

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xiaodi Liu ,  Gang Wang

IPC: H01L27/12

Abstract: An array substrate, a manufacturing method thereof and a display device are disclosed. The array substrate comprises a gate electrode layer, an active layer and a source-drain electrode layer that are disposed on a substrate. The substrate comprises a storage capacitance region thereon II. In the storage capacitance region II, projections of the gate electrode layer and the active layer on the substrate are at least partially overlapped, and projections of the active layer and the source-drain electrode layer on the substrate are at least partially overlapped. The array substrate can effectively increase the storage capacitance without increasing an area occupied by the storage capacitance region, which is advantageously to reduce a pixel area and increase PPI.

公开(公告)号：US10209559B2

公开(公告)日：2019-02-19

申请号：US15126878

申请日：2015-11-19

Applicant: BOE Technology Group Co., Ltd. ,  HEFEI BOE Optoelectronics Technology Co., Ltd.

Inventor： Youhao Sun ,  Gang Wang ,  Yunxiao Zhang ,  Bin Yang ,  Xianglong Meng ,  Jun Zhou ,  Wenjuan Zhang

IPC: B26D5/10 ,  B26D7/01 ,  B26D7/18 ,  G02F1/13 ,  G09G3/36 ,  B26D1/547 ,  B32B38/10 ,  B32B43/00 ,  G02F1/1333 ,  G02F1/1335

Abstract: A device for dismantling a liquid crystal display includes a carrier platform, a dismantling bracket, a dividing piece and a driving component; the carrier platform includes a carrying surface for supporting the liquid crystal display to be dismantled thereon, and the liquid crystal display to be dismantled includes a display panel and a backlight unit bonded to each other; the dividing piece is located above the carrier platform and mounted onto the dismantling bracket; the dividing piece is capable of being driven by the driving component so as to move in a first direction and into a slit between the display panel and the backlight unit; and the first direction intersects with an extending direction of the dividing piece. The dismantling device for liquid crystal display can solve the problem that the display panel and the backlight unit are difficult to be dismantled.

公开(公告)号：US09857344B2

公开(公告)日：2018-01-02

申请号：US14574841

申请日：2014-12-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaodi Liu ,  Cuili Gai ,  Fengjuan Liu ,  Gang Wang

IPC: G01N33/00 ,  H01L29/22 ,  H01L29/786 ,  H01L29/26

CPC classification number: G01N33/0027 ,  G01N33/0062 ,  H01L29/22 ,  H01L29/26 ,  H01L29/786

Abstract: Embodiments of the present invention provide a gas detection sensor, a display panel, and a display device. The gas detection sensor comprises: a gas sensitive part; two detection electrodes electrically connected with each other through the gas sensitive part; and a protective layer enclosing the gas sensitive part and the detection electrodes. When one of the detection electrodes is applied with a detecting signal, the detecting signal is output from the other detection electrode after being modulated by the gas sensitive part, and a voltage signal output by the other detection electrode is related to a nature of the outside air to which the gas sensitive part is exposed, thereby a detection on air quality may be achieved through detecting the voltage signal output from the other detection electrode, such that a simply structured and portable gas detection sensor can be realized.

公开(公告)号：US09647014B2

公开(公告)日：2017-05-09

申请号：US14416872

申请日：2014-05-27

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaodi Liu ,  Gang Wang

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/092 ,  H01L21/477 ,  H01L21/02 ,  H01L21/383 ,  H01L21/8238

CPC classification number: H01L27/1288 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/383 ,  H01L21/477 ,  H01L21/823807 ,  H01L27/092 ,  H01L27/1225 ,  H01L27/1262 ,  H01L27/127 ,  H01L29/7869

Abstract: A complementary thin film transistor driving back plate and a preparing method thereof, and a display device are disclosed. The preparing method comprises: forming a lower electrode (102) on a base substrate (101); sequentially disposing a continuously grown dielectric layer (103), a semiconductor layer (104), and a diffusion protection layer (105); sequentially forming a no-photoresist region (107), an N-type thin film transistor preparation region (108), and a P-type thin film transistor preparation region (109); removing a photoresist layer (114) of the N-type thin film transistor preparation region (108); removing a diffusion protection layer (105) of the N-type thin film transistor preparation region (105); removing a photoresist layer (114) of the P-type thin film transistor preparation region (109); performing an oxidation treatment to the base substrate (101); disposing a passivation layer (111) on the base substrate (101); and forming an upper electrode (113) on the passivation layer (111).

公开(公告)号：US09543338B2

公开(公告)日：2017-01-10

申请号：US14241345

申请日：2013-11-08

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xiang Liu ,  Gang Wang ,  Jianshe Xue

IPC: H01L21/84 ,  H01L27/12 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  G02F1/1343 ,  G02F1/1362 ,  H01L21/027 ,  H01L21/4763 ,  H01L29/45 ,  H01L29/786

CPC classification number: H01L27/1288 ,  G02F1/13439 ,  G02F1/136286 ,  G02F2001/136295 ,  H01L21/0274 ,  H01L21/47635 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/66765 ,  H01L29/7869

Abstract: The present invention provides a method for manufacturing an array substrate comprising: sequentially forming an adhesion enhancement layer, a copper-bearing metal layer and a photoresist layer on a substrate, and respectively forming a reserved region and a removal region by performing exposure and development on the photoresist layer using a mask plate, simultaneously processing the adhesion enhancement layer, the copper-bearing metal layer and the photoresist layer in the removal region by a single wet etching process, to form an adhesion enhancement intermediate layer corresponding to the adhesion enhancement layer, a copper-bearing metal intermediate layer corresponding to the copper-bearing metal layer and the photoresist layer thereon in the reserved region; simultaneously processing the adhesion enhancement intermediate layer, the copper-bearing metal intermediate layer and the photoresist layer by a dry etching process, then stripping off the photoresist layer, to form a patterned adhesion enhancement layer and a patterned copper-bearing metal layer respectively.

Abstract translation: 本发明提供一种阵列基板的制造方法，包括：在基板上依次形成粘合增强层，含铜金属层和光致抗蚀剂层，分别通过曝光和显影来形成保留区域和去除区域 使用掩模板的光致抗蚀剂层，通过单次湿法蚀刻工艺同时处理去除区域中的粘附增强层，含铜金属层和光致抗蚀剂层，以形成对应于粘合增强层的粘附增强中间层， 对应于所述保留区域中的含铜金属层和其上的光致抗蚀剂层的含铜金属中间层; 通过干法蚀刻工艺同时处理粘合增强中间层，含铜金属中间层和光致抗蚀剂层，然后剥离光致抗蚀剂层，分别形成图案化的附着增强层和图案化的含铜金属层。

公开(公告)号：US09461070B2

公开(公告)日：2016-10-04

申请号：US14377946

申请日：2013-12-11

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yanzhao Li ,  Gang Wang ,  Jingang Fang

IPC: H01L35/24 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L29/24 ,  H01L29/20 ,  H01L29/04 ,  H01L21/02 ,  H01L21/477 ,  H01L21/461 ,  H01L21/324

CPC classification number: H01L27/1222 ,  H01L21/02521 ,  H01L21/02543 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/02631 ,  H01L21/324 ,  H01L21/461 ,  H01L21/477 ,  H01L27/1259 ,  H01L29/04 ,  H01L29/20 ,  H01L29/24 ,  H01L29/26 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78681 ,  H01L29/78693 ,  H01L29/78696

Abstract: A thin film transistor is provided. An active layer (3) of the thin film transistor is made of an amorphous phosphide semiconductor material. Due to high carrier mobility of the phosphide semiconductor material, a thin film transistor with a high carrier mobility can be obtained by employing the amorphous phosphide semiconductor material to prepare the active layer of the thin film transistor. A method for manufacturing such a thin film transistor, and an array substrate and a display panel each comprising such a thin film transistor, are further provided.

Abstract translation: 提供薄膜晶体管。 薄膜晶体管的有源层（3）由非晶磷化物半导体材料制成。 由于磷化物半导体材料的高载流子迁移率，通过采用非晶磷化物半导体材料制备薄膜晶体管的有源层，可以获得具有高载流子迁移率的薄膜晶体管。 还提供了一种制造这种薄膜晶体管的方法，以及包括这种薄膜晶体管的阵列基板和显示面板。