Array substrate having light-shielding portion and display panel

    公开(公告)号:US11557638B2

    公开(公告)日:2023-01-17

    申请号:US16908913

    申请日:2020-06-23

    IPC分类号: H01L27/14 H01L27/32 H01L27/12

    摘要: An array substrate, a display panel including the array substrate, and a fabrication method of the array substrate are provided. The array substrate includes a base substrate, a light-shielding portion, a thin-film transistor and a capacitor. The light-shielding portion is formed on a first surface of the base substrate. The thin-film transistor is formed on a side of the light-shielding portion away from the base substrate, and includes an active layer. The capacitor is formed on the first surface of the base substrate, and includes a first capacitive electrode and a second capacitive electrode. The first capacitive electrode and the second capacitive electrode are at least partially arranged opposite to each other in a direction perpendicular to the first surface of the base substrate. The first capacitive electrode is provided in a same layer as the light-shielding portion.

    Display panel and driving method thereof

    公开(公告)号:US11257433B2

    公开(公告)日:2022-02-22

    申请号:US16490720

    申请日:2019-01-07

    摘要: Provided are a display panel (10) and the driving method thereof. The display panel (10) may include a first substrate (110) and a second substrate (120) opposite the first substrate (110). The first substrate (110) may include a pixel unit (100), and the pixel unit (100) may include a light emitting element (101) and a first transistor (112) for driving the light emitting element (101) to emit light. The second substrate (120) may include a second transistor (122). The second transistor (122) may be configured to have a second drift value of a second threshold voltage which has a specific relationship with a first drift value of a first threshold voltage of the first transistor (112) under same ambient condition.

    METHOD OF MANUFACTURING DISPLAY SUBSTRATE, DISPLAY SUBSTRATE AND DISPLAY PANEL

    公开(公告)号:US20210126023A1

    公开(公告)日:2021-04-29

    申请号:US17028988

    申请日:2020-09-22

    发明人: Hongda Sun Wenjun Hou

    IPC分类号: H01L27/12

    摘要: A method of manufacturing a display substrate, a display substrate and a display panel are provided. The method of manufacturing a display substrate includes: infiltrating an etching point of a film group with an etching solution, to form an infiltration groove at the etching point of a film group; and patterning a remaining part of the film group at the infiltration groove, to obtain a via hole penetrating the remaining part of the film group.

    Display substrate and manufacturing method thereof, and display apparatus

    公开(公告)号:US10943964B2

    公开(公告)日:2021-03-09

    申请号:US16335484

    申请日:2018-04-16

    IPC分类号: H01L27/32 H01L51/52 H01L51/56

    摘要: The present disclosure relates to a display substrate, a manufacturing method thereof, and a display device. The display substrate comprises: a plurality of sub-pixels arranged in an array; a base substrate; and an interlayer insulating layer, at least one heightened part and a plurality of signal wires, sequentially disposed on the base substrate, wherein an orthographic projection of the heightened part on the base substrate is located between orthographic projections of two adjacent sub-pixels on the base substrate, and two adjacent signal wires between the two adjacent sub-pixels are located on two sides of the heightened part and at least partially cover two lateral sides of the heightened part respectively.

    Array substrate, manufacture method thereof, display device

    公开(公告)号:US10381428B2

    公开(公告)日:2019-08-13

    申请号:US14893325

    申请日:2015-04-17

    摘要: An array substrate, a manufacture method thereof, and a display device are provided. The array substrate includes a first electrode (12), a second electrode (15); a light-emitting functional layer (13) located between the first electrode (12) and the second electrode (15); and an organic planar layer (14). The first electrode (12) is formed on the organic planar layer (14). The first electrode (12) includes metal electrode or metal alloy electrode. An oxide conductive layer (16) is further formed between the organic planar layer (14) and the first electrode (12).

    DISPLAY PANEL, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE

    公开(公告)号:US20220093894A1

    公开(公告)日:2022-03-24

    申请号:US17345029

    申请日:2021-06-11

    IPC分类号: H01L51/52 H01L27/32 H01L51/56

    摘要: A display panel includes: a substrate, a pixel-defining layer disposed on the substrate, and a conductive pattern, a light-emitting layer and a cathode layer which are laminated in a direction perpendicular to and away from the substrate. The pixel-defining layer is configured to define a plurality of pixel regions and a non-pixel region outside the pixel regions on the substrate. The conductive pattern includes: an auxiliary electrode layer disposed in the non-pixel region, wherein a groove is formed in a side wall of the auxiliary electrode layer. The cathode layer includes: a first portion disposed in the pixel region and a second portion disposed in the non-pixel region. The second portion of the cathode layer extends into the groove and is in contact with the groove.

    DISPLAY PANEL AND DRIVING METHOD THEREOF

    公开(公告)号:US20210327354A1

    公开(公告)日:2021-10-21

    申请号:US16490720

    申请日:2019-01-07

    IPC分类号: G09G3/3258 G09G3/00 H01L27/32

    摘要: Provided are a display panel (10) and the driving method thereof. The display panel (10) may include a first substrate (110) and a second substrate (120) opposite the first substrate (110). The first substrate (110) may include a pixel unit (100), and the pixel unit (100) may include a light emitting element (101) and a first transistor (112) for driving the light emitting element (101) to emit light. The second substrate (120) may include a second transistor (122). The second transistor (122) may be configured to have a second drift value of a second threshold voltage which has a specific relationship with a first drift value of a first threshold voltage of the first transistor (112) under same ambient condition.