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    Method for preparing array substrate
    4.
    发明授权
    Method for preparing array substrate 有权

    公开(公告)号：US11251207B2

    公开(公告)日：2022-02-15

    申请号：US16846888

    申请日：2020-04-13

    Applicant: BOE Technology Group Co., Ltd.

    Inventor： Yupeng Gao ,  Guangcai Yuan ,  Feng Guan ,  Zhi Wang ,  Jianhua Du ,  Zhaohui Qiang ,  Chao Li

    IPC: H01L27/00 ,  H01L29/00 ,  H01L21/00 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L29/24 ,  H01L29/16 ,  H01L21/84

    Abstract: The present disclosure discloses a method for preparing an array substrate, an array substrate and a display panel, wherein the method comprises: forming a buffer layer on a substrate in a first region and a second region, wherein the buffer layer has a groove located in the second region; forming a first indium oxide thin film on the buffer layer in the first region; forming a second indium oxide thin film in the groove; performing a reduction process on the second indium oxide thin film to obtain indium particles; forming an amorphous silicon thin film in the groove, and inducing the amorphous silicon of the amorphous silicon thin film to form microcrystalline silicon at a preset temperature by using the indium particles; and removing the indium particles in the microcrystalline silicon to form a microcrystalline silicon semiconductor layer of the microcrystalline silicon thin film transistor.

    Array substrate, preparation method thereof, and display panel
    5.
    发明授权
    Array substrate, preparation method thereof, and display panel 有权

    公开(公告)号：US11715744B2

    公开(公告)日：2023-08-01

    申请号：US17047912

    申请日：2020-03-25

    Applicant: BOE Technology Group Co., Ltd.

    Inventor： Guangcai Yuan ,  Xue Dong ,  Feng Guan ,  Yupeng Gao

    IPC: H01L27/12

    CPC classification number: H01L27/127 ,  H01L27/1233

    Abstract: This disclosure provides an array substrate, a method for preparing the array substrate, and a display panel. The method includes: forming a first thin film transistor and a second thin film transistor on a base substrate. In the formation of an active layer of the first thin film transistor, by using an eutectic point of the catalyst particle and silicon, and a driving factor that the Gibbs free energy of amorphous silicon is greater than that of crystalline silicon (silicon-based nanowire), and due to absorption of the amorphous silicon by the molten catalyst particle to form a supersaturated silicon eutectoid, the silicon nucleates and grows into a silicon-based nanowire. Moreover, during the growth of the silicon-based nanowire, the amorphous silicon film grows linearly along guide structure under the action of the catalyst particle, thus obtaining a silicon-based nanowire with a high density and high uniformity.

    Array substrate and display panel
    9.
    发明授权
    Array substrate and display panel 有权

    公开(公告)号：US12148768B2

    公开(公告)日：2024-11-19

    申请号：US18208529

    申请日：2023-06-12

    Applicant: BOE Technology Group Co., Ltd.

    Inventor： Guangcai Yuan ,  Xue Dong ,  Feng Guan ,  Yupeng Gao

    IPC: H01L27/12

    Abstract: Disclosed are an array substrate and a display panel. The array substrate includes: a base substrate; a first thin film transistor on the base substrate; where the first thin film transistor includes: a first gate electrode, a first active layer, a first source electrode, and a first drain electrode; where the first active layer includes: at least one guide structure extending in a first direction; a silicon-based nanowire, disposed on a side of the guide structure facing away from the base substrate; and an extending direction of the silicon-based nanowire is same as an extending direction of the guide structure.

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