公开(公告)号：US11605239B2

公开(公告)日：2023-03-14

申请号：US17041516

申请日：2020-04-08

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Shipei Li ,  Ying Zhao ,  Renquan Gu ,  Wei He ,  Huili Wu ,  Dongsheng Yin ,  Sheng Xu ,  Lizhen Zhang ,  Xuefei Zhao ,  Fang He ,  Yupeng Gao

IPC: G06V40/13 ,  H01L27/146

Abstract: Disclosed are a fingerprint recognition sensor, a manufacturing method, and a display device. The fingerprint recognition sensor includes a base substrate, a thin film transistor, on a side of the base substrate; and a photosensitive element, on a side of the base substrate away from the thin film transistor, the thin film transistor, the base substrate, and the photosensitive element are sequentially stacked in a thickness direction perpendicular to the base substrate, the base substrate includes a conductive structure penetrating through the base substrate in the thickness direction perpendicular to the base substrate, and the photosensitive element is connected with the thin film transistor through the conductive structure.

公开(公告)号：US11309452B2

公开(公告)日：2022-04-19

申请号：US16601472

申请日：2019-10-14

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wei He ,  Xiang Li ,  Huili Wu ,  Shipei Li ,  Fang He ,  Renquan Gu ,  Sheng Xu ,  Dongsheng Yin ,  Xuefei Zhao ,  Lizhen Zhang ,  Wusheng Li ,  Qi Yao

IPC: H01L33/06 ,  H01L27/15 ,  H01L33/50 ,  B82Y20/00

Abstract: A patterning method of a quantum dot layer, a quantum dot layer pattern, a quantum dot device, a manufacturing method of the quantum dot device, and a display apparatus are provided. The patterning method of the quantum dot layer includes: forming a quantum dot layer, in which the quantum dot layer includes quantum dots and a photoinitiator; irradiating a preset portion of the quantum dot layer by light having a preset wavelength to quench the quantum dots in the preset portion and form a patterned quantum dot layer.

公开(公告)号：US11569270B2

公开(公告)日：2023-01-31

申请号：US16824062

申请日：2020-03-19

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Sheng Xu ,  Huili Wu ,  Lizhen Zhang ,  Wei He ,  Xuefei Zhao ,  Shipei Li ,  Fang He ,  Dongsheng Yin ,  Renquan Gu ,  Wusheng Li ,  Qi Yao

IPC: H01L25/075 ,  H01L33/62 ,  H01L27/12

Abstract: A drive backboard, a manufacturing method thereof, a display panel and a display device are provided. The drive backboard includes a plurality of pixel units and a plurality of spare electrode groups. Each pixel unit includes m subpixel units, and m is a positive integer greater than or equal to 2. Each spare electrode group includes two first spare electrodes and one second spare electrode; two adjacent ith subpixel units respectively use one first spare electrode in each spare electrode group and share one second spare electrode in each spare electrode group, where i is a positive integer from 1 to m.

公开(公告)号：US20220020864A1

公开(公告)日：2022-01-20

申请号：US17210615

申请日：2021-03-24

Applicant: BOE Technology Group Co., Ltd.

Inventor： Lizhen ZHANG ,  Zhi Wang ,  Yi Zhou ,  Wei He ,  Sheng XU ,  Huili Wu ,  Fang He ,  Xuefei Zhao ,  Shipei Li ,  Renquan Gu ,  Wusheng Li ,  Qi Yao ,  Jaiil Ryu

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/417 ,  H01L29/786

Abstract: The present disclosure discloses a thin film transistor, a method for manufacturing thereof, an array substrate and a display device. The method for manufacturing the thin film transistor includes: forming a nanowire active layer on one side of a base substrate; forming a conductive protective layer on one side of the nanowire active layer away from the base substrate; forming an insulating layer on one side of the protective layer away from the nanowire active layer; etching the insulating layer using a dry etching process to form a first via hole exposing a first region of the protective layer and a second via hole exposing a second region of the protective layer; and forming a source-drain layer on one side of the insulating layer away from the protective layer, wherein the source-drain layer includes a first electrode and a second electrode.