Light-emitting substrate and method for manufacturing the same, and display apparatus

    公开(公告)号:US12191430B2

    公开(公告)日:2025-01-07

    申请号:US18043203

    申请日:2022-03-31

    Abstract: A light-emitting substrate includes a transparent substrate; a first metal light-shielding layer, a wiring layer and light-emitting devices. The first metal light-shielding layer is disposed on the transparent substrate. The wiring layer is disposed on a side of the first metal light-shielding layer away from the transparent substrate, and the wiring layer includes circuit traces and pads. Orthographic projections of the circuit traces and the pads on the transparent substrate are all located within an orthographic projection of the first metal light-shielding layer on the transparent substrate. The light-emitting devices are disposed on a side of the wiring layer away from the transparent substrate, and electrically connected to some of the pads; and orthographic projections of the light-emitting devices on the transparent substrate are located within the orthographic projection of the first metal light-shielding layer on the transparent substrate.

    Semiconductor device, array substrate and method for fabricating semiconductor device

    公开(公告)号:US10431701B2

    公开(公告)日:2019-10-01

    申请号:US15767605

    申请日:2017-09-22

    Abstract: The present disclosure relates to a semiconductor device, an array substrate, and a method for fabricating the semiconductor device. The semiconductor device comprises a substrate, a thin film transistor formed on the substrate, and a first light detection structure adjacent to the thin film transistor, wherein the first light detection structure includes a first bottom electrode, a top electrode, and a first photo-sensing portion disposed between the first bottom electrode and the first top electrode, one of a source electrode and a drain electrode of the thin film transistor is disposed in the same layer as the first bottom electrode of the first light detection structure; the other of the source electrode and the drain electrode of the thin film transistor is used as the first top electrode.

    PHOTODETECTOR AND DRIVING METHOD THEREOF, DISPLAY PANEL AND DISPLAY DEVICE

    公开(公告)号:US20190027499A1

    公开(公告)日:2019-01-24

    申请号:US15921964

    申请日:2018-03-15

    Abstract: A photodetector, a driving method thereof, a display panel and a display device are disclosed in the field of display technology. The photodetector includes photosensitive element, a voltage divider, a switch circuitry and a detection transistor. The photosensitive element and the voltage divider are connected in series between two power terminals. The gate of the detection transistor is connected to a first voltage dividing node between the photosensitive element and the voltage divider. Therefore, when the resistance of the photosensitive element becomes smaller under illumination, the voltage of the first voltage dividing node correspondingly rises, and the detection transistor is turned on and may output a current to a read line under the driving of a DC power terminal. The magnitude of the current is determined by the magnitude of the voltage of the first voltage dividing node. Since the current output by the detection transistor under the driving of the DC power terminal is large, the influence of the leakage current of the detection transistor on the output current may be negligible, thereby effectively improving the accuracy of fingerprint identification based on the output current.

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