公开(公告)号：US10784305B2

公开(公告)日：2020-09-22

申请号：US15768229

申请日：2017-09-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Rui Huang ,  Jianming Sun

IPC: H01L27/146 ,  G01T1/20 ,  H01L29/66 ,  H01L29/786

Abstract: The present application discloses a photodiode structure including multiple light trapping elements. Each light trapping element includes an N-type silicon layer with a recessed structure therein, an intrinsic silicon layer disposed overlying the N-type silicon layer including a side region and a bottom region inside the recessed structure, and a P-type silicon layer disposed as an inner layer overlying the intrinsic silicon layer inside the recessed structure. A radial PIN junction is formed around a nominal axis of the recessed structure.

公开(公告)号：US10714506B2

公开(公告)日：2020-07-14

申请号：US15921964

申请日：2018-03-15

Applicant: BOE Technology Group Co., Ltd.

Inventor： Dongsheng Li ,  Huili Wu ,  Jianming Sun ,  Shipei Li ,  Xiaolong He

IPC: H01L27/12 ,  G02F1/133 ,  G06F3/041 ,  H01L31/105 ,  G06K9/00 ,  H01L27/32

Abstract: A photodetector, a driving method thereof, a display panel and a display device are disclosed in the field of display technology. The photodetector includes photosensitive element, a voltage divider, a switch circuitry and a detection transistor. The photosensitive element and the voltage divider are connected in series between two power terminals. The gate of the detection transistor is connected to a first voltage dividing node between the photosensitive element and the voltage divider. Therefore, when the resistance of the photosensitive element becomes smaller under illumination, the voltage of the first voltage dividing node correspondingly rises, and the detection transistor is turned on and may output a current to a read line under the driving of a DC power terminal. The magnitude of the current is determined by the magnitude of the voltage of the first voltage dividing node. Since the current output by the detection transistor under the driving of the DC power terminal is large, the influence of the leakage current of the detection transistor on the output current may be negligible, thereby effectively improving the accuracy of fingerprint identification based on the output current.

公开(公告)号：US11664460B2

公开(公告)日：2023-05-30

申请号：US16608549

申请日：2019-04-25

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wenlin Zhang ,  Jianming Sun ,  Hehe Hu

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1285 ,  H01L29/78618

Abstract: The present disclosure relates to a thin-film transistor, a method for preparing the same, and a display substrate. The method for preparing the thin-film transistor includes the steps of forming a source electrode, a drain electrode, and an active layer, in which the step of forming the source electrode, the drain electrode, and the active layer includes: forming a first thin film from a first metal oxide material in an atmosphere of a first oxygen content; and forming a second thin film from a second metal oxide material in an atmosphere of a second oxygen content, in which the first thin film is configured to form the active layer, the second thin film is configured to form a source electrode and a drain electrode, and the second oxygen content is less than the first oxygen content.

公开(公告)号：US20200258935A1

公开(公告)日：2020-08-13

申请号：US15768229

申请日：2017-09-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Rui Huang ,  Jianming Sun

IPC: H01L27/146 ,  G01T1/20

Abstract: The present application discloses a photodiode structure including multiple light trapping elements. Each light trapping element includes an N-type silicon layer with a recessed structure therein, an intrinsic silicon layer disposed overlying the N-type silicon layer including a side region and a bottom region inside the recessed structure, and a P-type silicon layer disposed as an inner layer overlying the intrinsic silicon layer inside the recessed structure. A radial PIN junction is formed around a nominal axis of the recessed structure.

公开(公告)号：US09881948B2

公开(公告)日：2018-01-30

申请号：US15108736

申请日：2015-12-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD

Inventor： Jianming Sun ,  Ben Niu

IPC: H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  H01L27/144 ,  H01L31/09 ,  H01L31/101 ,  H01L27/12 ,  H01L31/0224 ,  H01L31/0232

CPC classification number: H01L27/1443 ,  H01L27/1214 ,  H01L27/1446 ,  H01L31/0224 ,  H01L31/02327 ,  H01L31/09 ,  H01L31/101

Abstract: The present disclosure provides an array substrate. The array substrate includes a substrate; and at least one ultraviolet (UV) detection structure. The UV detection structure includes a photosensitive pattern on the substrate, and a first electrode pattern and a second electrode pattern for providing an operating voltage for the at least one UV detection structure.

公开(公告)号：US10937355B2

公开(公告)日：2021-03-02

申请号：US16872412

申请日：2020-05-12

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Dongsheng Li ,  Jianming Sun ,  Huili Wu ,  Shipei Li ,  Qingrong Ren

IPC: G09G3/20 ,  G06K9/00 ,  H01L25/16 ,  H01L51/52 ,  H01L27/32 ,  G06K9/20 ,  G09G3/36 ,  G09G3/30

Abstract: A display substrate, a display panel, and a display device. The display substrate includes a substrate, and a plurality of polygonal pixels arranged in an array on the substrate. Each polygonal pixel includes a plurality of sub-pixels and a photoelectric sensor. An orthographic projection of the plurality of sub-pixels on the substrate and an orthogonal projection of the photoelectric sensor on the substrate do not overlap with each other. The display substrate, the display panel and the display device of the embodiments of the present disclosure can maximize the collection of optical signals, thereby improving the efficiency of the photoelectric sensor and the accuracy of a fingerprint identification in certain applications.

公开(公告)号：US10475824B2

公开(公告)日：2019-11-12

申请号：US15972096

申请日：2018-05-04

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Qingrong Ren ,  Woobong Lee ,  Fengchao Wang ,  Jianming Sun ,  Yingwei Liu ,  Wei Yang ,  Dongsheng Li

IPC: H01L27/12 ,  H01L27/146 ,  H01L31/0224 ,  H01L29/786

Abstract: The present disclosure provides a display panel, its manufacturing method and a display device. The manufacturing method of the display panel comprises: forming, on a substrate, a thin film transistor comprising a gate electrode, an active layer, a source electrode and a drain electrode; forming a hydrogen diffusion barrier layer that covers the entire substrate, wherein the hydrogen diffusion barrier layer is electrically conductive and is electrically connected to the drain electrode; and forming a photosensitive structure layer on the hydrogen diffusion barrier layer.

公开(公告)号：US20190305156A1

公开(公告)日：2019-10-03

申请号：US16169365

申请日：2018-10-24

Applicant: BOE Technology Group Co., Ltd.

Inventor： Qingrong Ren ,  Jianming Sun ,  Yingwei Liu

IPC: H01L31/032 ,  H01L27/32 ,  H01L31/0336 ,  H01L31/105 ,  H01L31/0392

Abstract: A photosensitive element includes a first film layer, a second film layer and a third film layer. The first film layer, the second film layer and the third film layer are in a sequentially stacked structure, the first film layer is a p-type copper indium gallium selenide (CIGS) layer, the second film layer is an i-type CIGS layer, and the third film layer is an n-type film layer, and the first film layer, the second film layer and the third film layer form a PIN junction structure.

公开(公告)号：US20190019813A1

公开(公告)日：2019-01-17

申请号：US15972096

申请日：2018-05-04

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Qingrong Ren ,  Woobong Lee ,  Fengchao Wang ,  Jianming Sun ,  Yingwei Liu ,  Wei Yang ,  Dongsheng Li

IPC: H01L27/12 ,  H01L27/146 ,  H01L31/0224

Abstract: The present disclosure provides a display panel, its manufacturing method and a display device. The manufacturing method of the display panel comprises: forming, on a substrate, a thin film transistor comprising a gate electrode, an active layer, a source electrode and a drain electrode; forming a hydrogen diffusion barrier layer that covers the entire substrate, wherein the hydrogen diffusion barrier layer is electrically conductive and is electrically connected to the drain electrode; and forming a photosensitive structure layer on the hydrogen diffusion barrier layer.

公开(公告)号：US20190012508A1

公开(公告)日：2019-01-10

申请号：US15745048

申请日：2017-09-05

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jianming Sun ,  Ce Ning ,  Wenlin Zhang

IPC: G06K9/00 ,  G02B6/132 ,  H01L21/44 ,  H01L21/82 ,  H04N5/225 ,  G02F1/1343 ,  H01L27/12 ,  H01L27/146

Abstract: An optical detector includes a stacked structure, an active layer, a gate insulating layer, and a gate electrode. The stacked structure includes a first electrode, a photoelectric conversion layer, a second electrode, a first insulating layer, and a third electrode. The active layer is electrically coupled to one of the first electrode or the second electrode, and electrically coupled to the third electrode. The gate insulating layer is arranged on the active layer. The gate electrode is arranged on the gate insulating layer.