公开(公告)号：US20240414990A1

公开(公告)日：2024-12-12

申请号：US18704044

申请日：2021-12-02

Applicant: BOE Technology Group Co., Ltd.

Inventor： Renquan GU ,  Huili WU ,  Shipei LI ,  Sheng XU ,  Wei HE ,  Lizhen ZHANG ,  Qi YAO ,  Feng ZHANG ,  Kang GUO ,  Guangcai YUAN ,  Xue DONG

IPC: H10K59/80 ,  G02B3/00 ,  H10K59/12

Abstract: Embodiments of the present disclosure provide a microlens structure and a manufacturing method therefor, and a display apparatus. The microlens structure comprises: a base substrate; and a plurality of microlenses, located at one side of the base substrate, wherein the material of each microlenses comprises a product generated after crosslinking a non-photosensitive resin monomer.

公开(公告)号：US20210159363A1

公开(公告)日：2021-05-27

申请号：US16824062

申请日：2020-03-19

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Sheng XU ,  Huili WU ,  Lizhen ZHANG ,  Wei HE ,  Xuefei ZHAO ,  Shipei LI ,  Fang HE ,  Dongsheng YIN ,  Renquan GU ,  Wusheng LI ,  Qi YAO

IPC: H01L33/38 ,  H01L33/24 ,  H01L25/075

Abstract: A drive backboard, a manufacturing method thereof, a display panel and a display device are provided. The drive backboard includes a plurality of pixel units and a plurality of spare electrode groups. Each pixel unit includes m subpixel units, and m is a positive integer greater than or equal to 2. Each spare electrode group includes two first spare electrodes and one second spare electrode; two adjacent ith subpixel units respectively use one first spare electrode in each spare electrode group and share one second spare electrode in each spare electrode group, where i is a positive integer from 1 to m.

公开(公告)号：US20210158007A1

公开(公告)日：2021-05-27

申请号：US17041516

申请日：2020-04-08

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Shipei LI ,  Ying ZHAO ,  Renquan GU ,  Wei HE ,  Huili WU ,  Dongsheng YIN ,  Sheng XU ,  Lizhen ZHANG ,  Xuefei ZHAO ,  Fang HE ,  Yupeng GAO

IPC: G06K9/00 ,  H01L27/146

Abstract: Disclosed are a fingerprint recognition sensor, a manufacturing method, and a display device. The fingerprint recognition sensor includes a base substrate, a thin film transistor, on a side of the base substrate; and a photosensitive element, on a side of the base substrate away from the thin film transistor, the thin film transistor, the base substrate, and the photosensitive element are sequentially stacked in a thickness direction perpendicular to the base substrate, the base substrate includes a conductive structure penetrating through the base substrate in the thickness direction perpendicular to the base substrate, and the photosensitive element is connected with the thin film transistor through the conductive structure.

公开(公告)号：US20230215851A1

公开(公告)日：2023-07-06

申请号：US17922139

申请日：2021-05-14

Applicant: BOE Technology Group Co., Ltd.

Inventor： Zhijun LV ,  Feng ZHANG ,  Wenqu LIU ,  Xiaoxin SONG ,  Zhao CUI ,  Liwen DONG ,  Detian MENG ,  Libo WANG ,  Dongfei HOU ,  Lizhen ZHANG

IPC: H01L25/16 ,  H01L27/12 ,  H01L33/00 ,  H01L23/00 ,  H01F7/20 ,  H01F7/06

CPC classification number: H01L25/167 ,  H01L27/124 ,  H01L33/0093 ,  H01L24/05 ,  H01L24/95 ,  H01F7/20 ,  H01F7/064 ,  H01L2224/05573 ,  H01L2224/06131 ,  H01L24/06 ,  H01L24/83 ,  H01L2224/2957 ,  H01L2224/29611 ,  H01L2224/29639 ,  H01L24/29 ,  H01L2224/83201 ,  H01L2224/95136 ,  H01L2224/95133

Abstract: A driving backplane, a transfer method for a light-emitting diode chip (21), and a display apparatus. The driving backplane comprises: a base substrate (10), a driving circuit, a plurality of electromagnetic structures (13), and a plurality of contact electrodes (12). The plurality of electromagnetic structures (13) in the driving backplane are symmetrically arranged relative to a first straight line (L1) and a second straight line (L2). A current signal can be applied to each electromagnetic structure (13) by means of the driving circuit. Stress generated by a transfer carrier plate (20) according to the magnetic force of each electromagnetic structure (13) moves the transfer carrier plate (20). When the transfer carrier plate (20) is stress balanced in each direction parallel to the surface of the transfer carrier plate (20), the light-emitting diode chip (21) is precisely aligned to corresponding contact electrodes (12).

公开(公告)号：US20220115562A1

公开(公告)日：2022-04-14

申请号：US17332852

申请日：2021-05-27

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhen ZHANG ,  Guangcai YUAN ,  Qi YAO ,  Mingxing WANG

IPC: H01L33/38 ,  H01L27/15 ,  H01L33/12 ,  H01L33/62 ,  H01L33/00

Abstract: An embodiment of the present disclosure provides a light emitting diode chip, including: a light emitting functional layer including a first semiconductor layer, a light emitting layer and a second semiconductor layer which are sequentially stacked, and a second semiconductor layer including a plurality of second semiconductor patterns which are arranged at intervals; a first electrode layer including a first electrode pattern electrically coupled to the first semiconductor layer; a second electrode layer disposed on a side, away from the light emitting layer, of the second semiconductor layer and including a plurality of second electrode patterns in one-to-one correspondence with the second semiconductor patterns, and the second electrode patterns are electrically coupled to the second semiconductor patterns correspondingly. Embodiments of the present disclosure further provide a method for manufacturing a light emitting diode chip and a display device.

公开(公告)号：US20230147104A1

公开(公告)日：2023-05-11

申请号：US17912372

申请日：2021-05-07

Applicant: BOE Technology Group Co., Ltd.

Inventor： Lizhen ZHANG ,  Sheng XU ,  Wei HE ,  Yi ZHOU ,  Qi YAO ,  Huili WU ,  Wusheng LI

IPC: H10K59/80 ,  H10K59/12 ,  G02B30/27

CPC classification number: H10K59/80515 ,  G02B30/27 ,  H10K59/879 ,  H10K59/1201

Abstract: A 3D display assembly, a display panel thereof and a method of manufacturing display panel. The display panel includes: a back plate, and a plurality of sub-pixel structures and partition structures on the back plate. In a first direction, each of the sub-pixel structures includes one or more first sub-sub-pixel structures and one or more second sub-sub-pixel structures arranged alternately. The first sub-sub-pixel structures have the same luminous color as the one or more second sub-sub-pixel structures. Each of the first sub-sub-pixel structures includes a first anode, and each of the second sub-sub-pixel structures includes a second anode. Second anodes are disposed at a side of the partition structures away from the back plate. Adjacent first anodes are partitioned by a partition structure. Orthographic projections of the first anodes on the back plate and orthographic projections of the second anodes on the back plate are connected, or the orthographic projections of the first anodes on the back plate and the orthographic projections of the second anodes on the back plate are overlapped and there is no non-light emitting region between sub-sub-pixel structures, therefore, no dark region is formed in a human eye observation region during 3D display, thereby solving moire problem.

公开(公告)号：US20210366966A1

公开(公告)日：2021-11-25

申请号：US17200930

申请日：2021-03-15

Applicant: BOE Technology Group Co., Ltd.

Inventor： Shipei LI ,  Lizhen ZHANG ,  Sheng XU ,  Wei HE ,  Huili WU ,  Xuefei ZHAO ,  Fang HE ,  Yi ZHOU ,  Ying ZHAO ,  Wusheng LI ,  Qi YAO

IPC: H01L27/146

Abstract: A photosensitive sensor, a preparation method thereof, and an electronic device, wherein the photosensitive sensor includes a substrate, the substrate having a sensing area, a plurality of regularly arranged sensing units being provided in the sensing area, a shielding layer being provided on a side of the sensing units away from the substrate, the shielding layer covering the sensing area, a material of the shielding layer being a transparent conductive material, and the shielding layer being connected with a constant voltage signal terminal.

公开(公告)号：US20200313037A1

公开(公告)日：2020-10-01

申请号：US16601472

申请日：2019-10-14

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wei HE ,  Xiang LI ,  Huili WU ,  Shipei LI ,  Fang HE ,  Renquan GU ,  Sheng XU ,  Dongsheng YIN ,  Xuefei ZHAO ,  Lizhen ZHANG ,  Wusheng LI ,  Qi YAO

IPC: H01L33/06 ,  H01L27/15 ,  H01L33/50

Abstract: A patterning method of a quantum dot layer, a quantum dot layer pattern, a quantum dot device, a manufacturing method of the quantum dot device, and a display apparatus are provided, The patterning method of the quantum dot layer includes: forming a quantum dot layer, in which the quantum dot layer includes quantum dots and a photoinitiator; irradiating a preset portion of the quantum dot layer by light having a preset wavelength to quench the quantum dots in the preset portion and form a patterned quantum dot layer.

公开(公告)号：US20220376137A1

公开(公告)日：2022-11-24

申请号：US17435016

申请日：2020-11-06

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Mingxing WANG ,  Binbin TONG ,  Lizhen ZHANG ,  Chenyang ZHANG ,  Zhen ZHANG ,  Xiawei YUN ,  Guangcai YUAN ,  Xue DONG ,  Muxin DI ,  Zhiwei LIANG ,  Ke WANG ,  Zhanfeng CAO

IPC: H01L33/38 ,  H01L33/46 ,  H01L33/62 ,  H01L33/00 ,  H01L25/075

Abstract: A light-emitting diode (LED) chip includes a plurality of epitaxial structures, at least one first electrode, and a plurality of second electrodes. Any two adjacent epitaxial structures of the plurality of epitaxial structures have a gap therebetween. Each epitaxial structure includes a first semiconductor pattern, a light-emitting pattern and a second semiconductor pattern stacked in sequence. First semiconductor patterns in at least two of the plurality of epitaxial structures are connected to each other to form a first semiconductor layer. A first electrode is electrically connected to the first semiconductor layer. Each second electrode is electrically connected to the second semiconductor pattern in at least one of the plurality of epitaxial structures.

公开(公告)号：US20210098438A1

公开(公告)日：2021-04-01

申请号：US16887368

申请日：2020-05-29

Applicant: BOE Technology Group Co., Ltd.

Inventor： Lizhen ZHANG

IPC: H01L25/16 ,  H01L33/62 ,  H01L25/075

Abstract: Provided are micro light emitting diode display substrate, device and fabrication method thereof. The micro light emitting diode display substrate includes: a first base substrate; micro light emitting diodes on the first base substrate and including first and second electrodes; a common electrode layer on a side of a layer where the first and second electrodes are located away from the first base substrate, and electrically connected to the second electrodes of the micro light emitting diodes and spaced apart from the first electrodes; an interlayer insulating layer on a side of the common electrode layer away from the first base substrate and having via holes exposing the first electrodes of the micro light emitting diodes, respectively; first connection electrodes on a side of the interlayer insulating layer away from the first base substrate, and filling the via holes to be electrically connected to the first electrodes, respectively.