公开(公告)号：US20120153413A1

公开(公告)日：2012-06-21

申请号：US12973536

申请日：2010-12-20

Applicant: Haiwen Xi ,  Antoine Khoueir ,  Brian Lee ,  Patrick J. Ryan

Inventor： Haiwen Xi ,  Antoine Khoueir ,  Brian Lee ,  Patrick J. Ryan

IPC: H01L29/82 ,  H01L21/02

CPC classification number: H01L43/08 ,  B82Y40/00 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/329 ,  H01F41/303 ,  H01L43/12

Abstract: An apparatus and associated method for a non-volatile memory cell, such as an STRAM cell. In accordance with various embodiments, a magnetic free layer is laterally separated from an antiferromagnetic layer (AFM) by a non-magnetic spacer layer and medially separated from a synthetic antiferromagnetic layer (SAF) by a magnetic tunneling junction. The AFM pins the magnetization of the SAF through contact with a pinning region of the SAF that laterally extends beyond the magnetic tunneling junction.

Abstract translation: 用于非易失性存储器单元（例如STRAM单元）的装置和相关方法。 根据各种实施例，无磁性层通过非磁性间隔层与反铁磁层（AFM）横向分离，并通过磁性隧道结从中间分离的合成反铁磁层（SAF）。 AFM通过与SAF的钉扎区域的接触来引导SAF的磁化，该区域横向延伸超过磁性隧道结。

公开(公告)号：US08203870B2

公开(公告)日：2012-06-19

申请号：US12953205

申请日：2010-11-23

Applicant: Nurul Amin ,  Dimitar V. Dimitrov ,  Haiwen Xi ,  Song S. Xue

Inventor： Nurul Amin ,  Dimitar V. Dimitrov ,  Haiwen Xi ,  Song S. Xue

IPC: G11C11/00

CPC classification number: G11C11/5607 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/222 ,  Y10S977/935

Abstract: An apparatus and associated method for a non-volatile memory cell, such as a multi-bit magnetic random access memory cell. In accordance with various embodiments, a first magnetic tunnel junction (MTJ) is adjacent to a second MTJ having a magnetic filter. The first MTJ is programmed to a first logical state with a first magnetic flux while the magnetic filter absorbs the first magnetic flux to prevent the second MTJ from being programmed.

Abstract translation: 一种用于非易失性存储单元（诸如多位磁随机存取存储单元）的装置和相关方法。 根据各种实施例，第一磁性隧道结（MTJ）与具有磁性过滤器的第二MTJ相邻。 第一MTJ被编程为具有第一磁通量的第一逻辑状态，同时磁性滤波器吸收第一磁通量以防止第二MTJ被编程。

公开(公告)号：US08199564B2

公开(公告)日：2012-06-12

申请号：US13160969

申请日：2011-06-15

Applicant: Yuankai Zheng ,  Dimitar V. Dimitrov ,  Haiwen Xi

Inventor： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Haiwen Xi

IPC: G11C11/02

CPC classification number: G11C11/15 ,  G11C11/1675 ,  G11C11/5607

Abstract: Methods of writing to a multi-bit MRAM memory unit are described. The method includes to self-detected writing to a multi-bit (i.e., multilevel) thermally assisted MRAM. The self-detected writing increases a reading margin between data state levels and decreases reading margin variability due to cell resistance variation.

Abstract translation: 描述写入多位MRAM存储器单元的方法。 该方法包括对多位（即多级）热辅助MRAM进行自检测写入。 自检的写入会增加数据状态级之间的读取余量，并降低由于单元格电阻变化而导致的读取边缘变化。

公开(公告)号：US20120119313A1

公开(公告)日：2012-05-17

申请号：US12947516

申请日：2010-11-16

Applicant: Yuankai Zheng ,  Xiaohua Lou ,  Wei Tian ,  Zheng Gao ,  Haiwen Xi

Inventor： Yuankai Zheng ,  Xiaohua Lou ,  Wei Tian ,  Zheng Gao ,  Haiwen Xi

IPC: H01L29/82 ,  H01L21/02

CPC classification number: H01L43/02 ,  B82Y40/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/30 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: An apparatus and associated method for a non-volatile memory cell with a phonon-blocking insulating layer. In accordance with various embodiments, a magnetic stack has a tunnel junction, ferromagnetic free layer, pinned layer, and an insulating layer that is constructed of an electrically and thermally insulative material that blocks phonons while allowing electrical transmission through at least one conductive feature.

Abstract translation: 一种具有声阻隔绝缘层的非易失性存储单元的装置和相关方法。 根据各种实施例，磁性堆叠具有隧道结，铁磁自由层，被钉扎层和由电绝缘材料和热绝缘材料构成的绝缘层，其阻挡声子同时允许通过至少一个导电特征的电传输。

公开(公告)号：US20120104348A1

公开(公告)日：2012-05-03

申请号：US13348253

申请日：2012-01-11

Applicant: Haiwen Xi ,  Ming Sun ,  Dexin Wang ,  Shuiyuan Huang ,  Michael Tang ,  Song S. Xue

Inventor： Haiwen Xi ,  Ming Sun ,  Dexin Wang ,  Shuiyuan Huang ,  Michael Tang ,  Song S. Xue

IPC: H01L47/00

CPC classification number: H01L45/085 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1266 ,  H01L45/141 ,  H01L45/143 ,  H01L45/1625 ,  H01L45/1633 ,  H01L45/1658 ,  H01L45/1675

Abstract: Methods for making a programmable metallization memory cell are disclosed.

Abstract translation: 公开了制造可编程金属化存储单元的方法。

公开(公告)号：US08102691B2

公开(公告)日：2012-01-24

申请号：US12144705

申请日：2008-06-24

Applicant: Haiwen Xi ,  Xiaobin Wang ,  Dimitar V. Dimitrov ,  Paul E. Anderson ,  Harry Liu ,  Song S. Xue ,  Andreas Roelofs ,  Markus Siegert

Inventor： Haiwen Xi ,  Xiaobin Wang ,  Dimitar V. Dimitrov ,  Paul E. Anderson ,  Harry Liu ,  Song S. Xue ,  Andreas Roelofs ,  Markus Siegert

IPC: G11C19/00

CPC classification number: G11C19/0808 ,  G11C11/14 ,  Y10S977/933

Abstract: Magnetic shift registers in which data writing and reading is accomplished by moving the magnetic domain walls by electric current. Various embodiments of domain wall nodes or anchors that stabilize a domain wall are provided. In some embodiments, the wall anchors are elements separate from the magnetic track. In other embodiments, the wall anchors are disturbances in the physical configuration of the magnetic track. In still other embodiments, the wall anchors are disturbances in the material of the magnetic track.

Abstract translation: 磁性移位寄存器，其中通过电流移动磁畴壁来实现数据写入和读取。 提供了稳定域壁的畴壁节点或锚的各种实施例。 在一些实施例中，壁锚是与磁迹分离的元件。 在其他实施例中，壁锚是磁轨的物理构型的扰动。 在另外的其它实施例中，壁锚是磁迹材料中的干扰。

公开(公告)号：US20120014175A1

公开(公告)日：2012-01-19

申请号：US13241381

申请日：2011-09-23

Applicant: Xiaobin Wang ,  Yiran Chen ,  Alan Wang ,  Haiwen Xi ,  Wenzhong Zhu ,  Hai Li ,  Hongyue Liu

Inventor： Xiaobin Wang ,  Yiran Chen ,  Alan Wang ,  Haiwen Xi ,  Wenzhong Zhu ,  Hai Li ,  Hongyue Liu

IPC: G11C11/00 ,  G01R27/14 ,  G01R33/12

CPC classification number: G01R33/098 ,  G11C11/1673 ,  G11C11/1675 ,  G11C13/003 ,  G11C2213/56 ,  G11C2213/76 ,  H01L27/224 ,  H01L43/08

Abstract: A magnetic memory device includes a magnetic tunnel junction having a free magnetic layer having a magnetization orientation that is switchable between a high resistance state magnetization orientation and a low resistance state magnetization orientation and a memristor solid state element electrically coupled to the magnetic tunnel junction. The memristor has a device response that is an integrated voltage versus an integrated current.

Abstract translation: 磁存储器件包括具有磁化取向的自由磁性层的磁性隧道结，其磁化取向可在高电阻状态磁化取向和低电阻状态磁化取向之间切换，以及与磁性隧道结电耦合的忆阻体固态元件。 忆阻器具有集成电压与集成电流的器件响应。

公开(公告)号：US08054675B2

公开(公告)日：2011-11-08

申请号：US13028246

申请日：2011-02-16

Applicant: Haiwen Xi ,  Hongyue Liu ,  Xiaobin Wang ,  Yong Lu ,  Yiran Chen ,  Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Hai Li

Inventor： Haiwen Xi ,  Hongyue Liu ,  Xiaobin Wang ,  Yong Lu ,  Yiran Chen ,  Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Hai Li

IPC: G11C11/00 ,  G11C11/14 ,  G11C11/15

CPC classification number: G11C11/16 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0064 ,  G11C13/0069 ,  G11C2013/0057

Abstract: Variable write and read methods for resistance random access memory (RRAM) are disclosed. The methods include initializing a write sequence and verifying the resistance state of the RRAM cell. If a write pulse is needed, then two or more write pulses are applied through the RRAM cell to write the desired data state to the RRAM cell. Each subsequent write pulse has substantially the same or greater write pulse duration. Subsequent write pulses are applied to the RRAM cell until the RRAM cell is in the desired data state or until a predetermined number of write pulses have been applied to the RRAM cell. A read method is also disclosed where subsequent read pulses are applied through the RRAM cell until the read is successful or until a predetermined number of read pulses have been applied to the RRAM cell.

Abstract translation: 公开了用于电阻随机存取存储器（RRAM）的可变写和读方法。 这些方法包括初始化写入序列并验证RRAM单元的电阻状态。 如果需要写入脉冲，则通过RRAM单元施加两个或更多写入脉冲，以将期望的数据状态写入RRAM单元。 每个后续写入脉冲具有基本上相同或更大的写入脉冲持续时间。 随后的写入脉冲被施加到RRAM单元，直到RRAM单元处于期望的数据状态，或直到预定数量的写入脉冲已经被施加到RRAM单元为止。 还公开了一种读取方法，其中随后的读取脉冲通过RRAM单元被施加，直到读取成功或直到预定数量的读取脉冲已经被应用于RRAM单元为止。

公开(公告)号：US08053244B2

公开(公告)日：2011-11-08

申请号：US12190687

申请日：2008-08-13

Applicant: Pat J. Ryan ,  Haiwen Xi ,  Insik Jin

Inventor： Pat J. Ryan ,  Haiwen Xi ,  Insik Jin

IPC: G01N27/00 ,  G01N27/72 ,  G01N33/543 ,  G01N33/551

CPC classification number: G01N27/745

Abstract: A biosensor is described. The biosensor includes a fixed multilayer stack providing a magnetization oscillation, a voltage source electrically coupled to the fixed multilayer stack, and a binding molecule covalently bonded to the biosensor. The voltage source provides a direct current through the fixed multilayer stack to generate the magnetization oscillation and a target molecule including a magnetic nanoparticle forms a complex with the binding molecule and alters the magnetization oscillation.

Abstract translation: 描述生物传感器。 生物传感器包括提供磁化振荡的固定多层堆叠，电耦合到固定多层叠层的电压源和共价键合到生物传感器上的结合分子。 电压源提供通过固定多层堆叠的直流电以产生磁化振动，并且包括磁性纳米颗粒的靶分子与结合分子形成复合物并改变磁化振荡。

公开(公告)号：US08000128B2

公开(公告)日：2011-08-16

申请号：US12835791

申请日：2010-07-14

Applicant: Shaoping Li ,  Insik Jin ,  Zheng Gao ,  Eileen Yan ,  Kaizhong Gao ,  Haiwen Xi ,  Song Xue

Inventor： Shaoping Li ,  Insik Jin ,  Zheng Gao ,  Eileen Yan ,  Kaizhong Gao ,  Haiwen Xi ,  Song Xue

IPC: G11C11/00

CPC classification number: G11C13/0007 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/52 ,  G11C2213/72 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/122 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1666

Abstract: A resistive random access memory (RRAM) cell that includes a first electrode having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; a resistive layer having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; and a second electrode having a lower portion, an upper portion and an outer surface; wherein the outer surface of the resistive layer directly contacts the inner surface of the first electrode.

Abstract translation: 一种电阻随机存取存储器（RRAM）单元，包括具有下部，连续侧部和上部的第一电极，所述下部和所述连续侧部具有外表面和内表面; 具有下部，连续侧部和上部的电阻层，所述下部和所述连续侧部具有外表面和内表面; 和具有下部，上部和外表面的第二电极; 其中电阻层的外表面直接接触第一电极的内表面。