Invention Grant
- Patent Title: Thermally assisted multi-bit MRAM
- Patent Title (中): 热辅助多位MRAM
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Application No.: US13160969Application Date: 2011-06-15
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Publication No.: US08199564B2Publication Date: 2012-06-12
- Inventor: Yuankai Zheng , Dimitar V. Dimitrov , Haiwen Xi
- Applicant: Yuankai Zheng , Dimitar V. Dimitrov , Haiwen Xi
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Mueting Raasch & Gebhardt PA
- Main IPC: G11C11/02
- IPC: G11C11/02
Abstract:
Methods of writing to a multi-bit MRAM memory unit are described. The method includes to self-detected writing to a multi-bit (i.e., multilevel) thermally assisted MRAM. The self-detected writing increases a reading margin between data state levels and decreases reading margin variability due to cell resistance variation.
Public/Granted literature
- US20110242883A1 THERMALLY ASSISTED MULTI-BIT MRAM Public/Granted day:2011-10-06
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