知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

26 条记录 (耗时 0.016 秒)

    PLANAR PROGRAMMABLE METALLIZATION MEMORY CELLS
    1.
    发明申请
    PLANAR PROGRAMMABLE METALLIZATION MEMORY CELLS 有权
    平面可编程金属化记忆细胞

    公开(公告)号：US20100072448A1

    公开(公告)日：2010-03-25

    申请号：US12233770

    申请日：2008-09-19

    申请人： Antoine Khoueir ,  Haiwen Xi ,  Shuiyuan Huang

    发明人： Antoine Khoueir ,  Haiwen Xi ,  Shuiyuan Huang

    IPC分类号： H01L45/00

    CPC分类号： H01L45/085 ,  H01L27/2436 ,  H01L45/1226 ,  H01L45/141 ,  H01L45/143 ,  H01L45/1658

    摘要： Programmable metallization memory cells that have an inert electrode and an active electrode positioned in a non-overlapping manner in relation to a substrate. A fast ion conductor material is in electrical contact with and extends from the inert electrode to the active electrode, the fast ion conductor including superionic clusters extending from the inert electrode to the active electrode. A metal layer extends from the inert electrode to the active electrode, yet is electrically insulated from each of the inert electrode and the active electrode by the fast ion conductor material. Methods for forming programmable metallization cells are also disclosed.

    摘要翻译： 具有惰性电极和有源电极的可编程金属化存储单元相对于衬底以非重叠的方式定位。 快速离子导体材料与惰性电极电接触并延伸到有源电极，快速离子导体包括从惰性电极延伸到有源电极的超离子簇。 金属层从惰性电极延伸到有源电极，但是通过快速离子导体材料与惰性电极和有源电极中的每一个电绝缘。 还公开了用于形成可编程金属化电池的方法。

    Active Protection Device for Resistive Random Access Memory (RRAM) Formation
    6.
    发明申请
    Active Protection Device for Resistive Random Access Memory (RRAM) Formation 有权
    用于电阻随机存取存储器（RRAM）形成的主动保护装置

    公开(公告)号：US20110007552A1

    公开(公告)日：2011-01-13

    申请号：US12502224

    申请日：2009-07-13

    申请人： Yongchul Ahn ,  Antoine Khoueir ,  Shuiyuan Huang ,  Peter Nicholas Manos ,  Maroun Khoury

    发明人： Yongchul Ahn ,  Antoine Khoueir ,  Shuiyuan Huang ,  Peter Nicholas Manos ,  Maroun Khoury

    IPC分类号： G11C11/00 ,  G11C5/14

    CPC分类号： G11C13/0007 ,  G11C13/003 ,  G11C13/0059 ,  G11C13/0069 ,  G11C2013/0083 ,  G11C2213/78 ,  G11C2213/79

    摘要： Apparatus and method for providing overcurrent protection to a resistive random access memory (RRAM) cell during an RRAM formation process used to prepare the cell for normal read and write operations. In accordance with various embodiments, the RRAM cell is connected between a first control line and a second control line, and an active protection device (APD) is connected between the second control line and an electrical ground terminal. A formation current is applied through the RRAM cell, and an activation voltage is concurrently applied to the APD to maintain a maximum magnitude of the formation current below a predetermined threshold level

    摘要翻译： 在用于准备用于正常读写操作的单元的RRAM形成过程期间，向电阻随机存取存储器（RRAM）单元提供过电流保护的装置和方法。 根据各种实施例，RRAM单元连接在第一控制线和第二控制线之间，并且主动保护装置（APD）连接在第二控制线和电接地端之间。 通过RRAM单元施加形成电流，并且激活电压同时施加到APD以将形成电流的最大幅度维持在预定阈值水平以下

    Non-volatile multi-bit memory with programmable capacitance
    7.
    发明授权
    Non-volatile multi-bit memory with programmable capacitance 有权
    带可编程电容的非易失性多位存储器

    公开(公告)号：US07786463B2

    公开(公告)日：2010-08-31

    申请号：US12123685

    申请日：2008-05-20

    申请人： Xuguang Wang ,  Shuiyuan Huang ,  Dimitar V. Dimitrov ,  Michael Xuefei Tang ,  Song S. Xue

    发明人： Xuguang Wang ,  Shuiyuan Huang ,  Dimitar V. Dimitrov ,  Michael Xuefei Tang ,  Song S. Xue

    IPC分类号： H01L45/00

    CPC分类号： H01L45/085 ,  G11C16/0475 ,  H01L45/1206 ,  H01L45/1266 ,  H01L45/143 ,  H01L45/1658

    摘要： Non-volatile multi-bit memory with programmable capacitance is disclosed. Illustrative data memory units include a substrate including a source region and a drain region. A first insulating layer is over the substrate. A first solid electrolyte cell is over the insulating layer and has a capacitance that is controllable between at least two states and is proximate the source region. A second solid electrolyte cell is over the insulating layer and has a capacitance or resistance that is controllable between at least two states and is proximate the drain region. An insulating element isolates the first solid electrolyte cell from the second solid electrolyte cell. A first anode is electrically coupled to the first solid electrolyte cell. The first solid electrolyte cell is between the anode and the insulating layer. A second anode is electrically coupled to the second solid electrolyte cell. The second solid electrolyte cell is between the anode and the insulating layer. A gate contact layer is over the substrate and between the source region and drain region and in electrical connection with the first anode and the second anode. The gate contact layer is electrically coupled to a voltage source.

    摘要翻译： 公开了具有可编程电容的非易失性多位存储器。 说明性数据存储单元包括包括源极区和漏极区的衬底。 第一绝缘层在衬底上。 第一固体电解质电池在绝缘层之上并且具有在至少两个状态之间可控并且在源极区附近的电容。 第二固体电解质电池在绝缘层之上，并且具有在至少两个状态之间可控的并且在漏极区附近的电容或电阻。 绝缘元件将第一固体电解质电池与第二固体电解质电池隔离。 第一阳极电耦合到第一固体电解质电池。 第一固体电解质电池在阳极和绝缘层之间。 第二阳极电耦合到第二固体电解质电池。 第二固体电解质电池在阳极和绝缘层之间。 栅极接触层在衬底上并且在源极区域和漏极区域之间并且与第一阳极和第二阳极电连接。 栅极接触层电耦合到电压源。