Programmable metallization memory cells via selective channel forming

Invention Grant

US08334165B2 Programmable metallization memory cells via selective channel forming 有权

Title translation: 可编程金属化存储单元通过选择性通道形成

Patent Title: Programmable metallization memory cells via selective channel forming
Patent Title (中): 可编程金属化存储单元通过选择性通道形成
Application No.: US12761899

Application Date: 2010-04-16
Publication No.: US08334165B2

Publication Date: 2012-12-18
Inventor: Haiwen Xi , Ming Sun , Dexin Wang , Shuiyuan Huang , Michael Tang , Song S. Xue
Applicant: Haiwen Xi , Ming Sun , Dexin Wang , Shuiyuan Huang , Michael Tang , Song S. Xue
Applicant Address: US CA Scotts Valley
Assignee: Seagate Technology LLC
Current Assignee: Seagate Technology LLC
Current Assignee Address: US CA Scotts Valley
Agency: Mueting Raasch & Gebhardt PA
Main IPC: H01L21/00
IPC: H01L21/00

Abstract:

Methods for making a programmable metallization memory cell are disclosed.

Abstract(Chinese):

公开了制造可编程金属化存储单元的方法。

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备