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公开(公告)号:US12094835B2
公开(公告)日:2024-09-17
申请号:US18377706
申请日:2023-10-06
发明人: Shaowu Huang , Javier A. Delacruz
IPC分类号: H01L23/552 , H01L21/56 , H01L23/31
CPC分类号: H01L23/552 , H01L21/566 , H01L23/3121 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2924/15311 , H01L2924/19105 , H01L2924/19107 , H01L2924/3025
摘要: Apparatuses relating generally to a microelectronic package having protection from electromagnetic interference are disclosed. In an apparatus thereof, a platform has an upper surface and a lower surface opposite the upper surface and has a ground plane. A microelectronic device is coupled to the upper surface of the platform. Wire bond wires are coupled to the ground plane with a pitch. The wire bond wires extend away from the upper surface of the platform with upper ends of the wire bond wires extending above an upper surface of the microelectronic device. The wire bond wires are spaced apart from one another to provide a fence-like perimeter to provide an interference shielding cage. A conductive layer is coupled to at least a subset of the upper ends of the wire bond wires for electrical conductivity to provide a conductive shielding layer to cover the interference shielding cage.
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公开(公告)号:US20240304583A1
公开(公告)日:2024-09-12
申请号:US18606973
申请日:2024-03-15
发明人: Jong Sik Paek , Doo Hyun Park
IPC分类号: H01L23/00 , H01L21/56 , H01L23/31 , H01L23/538 , H01L25/10
CPC分类号: H01L24/17 , H01L21/56 , H01L21/568 , H01L23/3135 , H01L24/19 , H01L24/85 , H01L25/105 , H01L23/5389 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/81 , H01L24/92 , H01L2224/0401 , H01L2224/04042 , H01L2224/04105 , H01L2224/12105 , H01L2224/131 , H01L2224/13147 , H01L2224/16225 , H01L2224/32225 , H01L2224/45099 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73267 , H01L2224/81005 , H01L2224/81203 , H01L2224/81815 , H01L2224/85 , H01L2224/92125 , H01L2225/1011 , H01L2225/1023 , H01L2225/1035 , H01L2225/1041 , H01L2225/1058 , H01L2225/107 , H01L2924/00012 , H01L2924/00014 , H01L2924/12042 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H01L2924/18161 , H01L2924/18162 , H01L2924/19107 , H01L2924/3511
摘要: A semiconductor device and manufacturing method thereof. Various aspects of the disclosure may, for example, comprise forming a back end of line layer on a dummy substrate, completing at least a first portion of an assembly, and removing the dummy substrate.
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公开(公告)号:US20240304525A1
公开(公告)日:2024-09-12
申请号:US18426032
申请日:2024-01-29
发明人: Tatsuya KARASAWA
IPC分类号: H01L23/495 , H01L23/00 , H01L25/065
CPC分类号: H01L23/4951 , H01L23/4952 , H01L24/08 , H01L24/48 , H01L25/0652 , H01L2224/08145 , H01L2224/08155 , H01L2224/48137 , H01L2224/48225 , H01L2924/01029 , H01L2924/13055 , H01L2924/13091 , H01L2924/19107
摘要: A method includes electrically connecting first and second semiconductor elements to conductive plates, respectively, on the front surface of one or more insulating substrates disposed on a metal base; disposing, on the base, a case including a chassis, a first lead frame having a first wiring part extending in a wired direction parallel to the front surface, and a second lead frame having a second wiring part in the wiring direction to overlap the first wiring part with gap that are integrally molded together; and attaching one or more insulating members that include a clamping part sandwiching the first and second wiring parts from the rear surface of the first wiring part and the front surface of the second wiring part in an attachment area thereof and a wiring gap part filling the gap in the attachment area, before joining the lead frames to circuit patterns, respectively.
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公开(公告)号:US12068741B2
公开(公告)日:2024-08-20
申请号:US18306713
申请日:2023-04-25
申请人: ROHM CO., LTD.
发明人: Masashi Hayashiguchi , Kazuhide Ino
IPC分类号: H02H3/00 , G01R19/00 , H01L23/00 , H01L23/31 , H01L23/373 , H01L25/07 , H01L25/18 , H02H3/20 , H02H9/04 , H02M7/5387 , H03K17/081 , H03K17/082 , H03K17/12 , H02M1/00
CPC分类号: H03K17/08104 , G01R19/0092 , H01L23/3107 , H01L23/3735 , H01L24/40 , H01L24/49 , H01L24/73 , H01L25/072 , H01L25/18 , H02H3/202 , H02H9/046 , H02M7/5387 , H03K17/0822 , H03K17/122 , H01L24/33 , H01L24/37 , H01L24/48 , H01L2224/0603 , H01L2224/291 , H01L2224/32225 , H01L2224/32245 , H01L2224/33181 , H01L2224/371 , H01L2224/40095 , H01L2224/40225 , H01L2224/48091 , H01L2224/48106 , H01L2224/48227 , H01L2224/48247 , H01L2224/4903 , H01L2224/49111 , H01L2224/49175 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83801 , H01L2224/84801 , H01L2924/00014 , H01L2924/10272 , H01L2924/12032 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/19107 , H02M1/0009 , H03K2217/0027 , Y02B70/10 , H01L2224/48091 , H01L2924/00014 , H01L2924/13055 , H01L2924/00 , H01L2224/73265 , H01L2224/32225 , H01L2224/48227 , H01L2924/00012 , H01L2224/291 , H01L2924/014 , H01L2224/73265 , H01L2224/32245 , H01L2224/48247 , H01L2924/00 , H01L2224/49175 , H01L2224/48227 , H01L2924/00 , H01L2224/49175 , H01L2224/48247 , H01L2924/00 , H01L2924/13091 , H01L2924/00 , H01L2224/49111 , H01L2224/48247 , H01L2924/00 , H01L2924/00014 , H01L2224/45099 , H01L2924/00014 , H01L2224/45015 , H01L2924/207 , H01L2924/181 , H01L2924/00012 , H01L2224/84801 , H01L2924/00014 , H01L2224/83801 , H01L2924/00014
摘要: A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.
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公开(公告)号:US11984246B2
公开(公告)日:2024-05-14
申请号:US17566529
申请日:2021-12-30
申请人: Intel Corporation
CPC分类号: H01F17/0033 , H01F41/046 , H01L23/5227 , H01L23/645 , H01L24/17 , H01F2017/0086 , H01F2027/2814 , H01L24/13 , H01L24/16 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/0401 , H01L2224/05647 , H01L2224/11 , H01L2224/1132 , H01L2224/11334 , H01L2224/11462 , H01L2224/16265 , H01L2224/16267 , H01L2224/1703 , H01L2224/171 , H01L2924/19042 , H01L2924/19104 , H01L2924/19107 , H01L2224/0345 , H01L2924/00014 , H01L2224/03462 , H01L2924/00014 , H01L2224/03464 , H01L2924/00014 , H01L2224/05647 , H01L2924/00014 , H01L2224/11462 , H01L2924/00014 , H01L2224/1132 , H01L2924/00014 , H01L2224/11334 , H01L2924/00014
摘要: Embodiments of the invention include a microelectronic device and methods of forming a microelectronic device. In an embodiment the microelectronic device includes a semiconductor die and an inductor that is electrically coupled to the semiconductor die. The inductor may include one or more conductive coils that extend away from a surface of the semiconductor die. In an embodiment each conductive coils may include a plurality of traces. For example, a first trace and a third trace may be formed over a first dielectric layer and a second trace may be formed over a second dielectric layer and over a core. A first via through the second dielectric layer may couple the first trace to the second trace, and a second via through the second dielectric layer may couple the second trace to the third trace.
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公开(公告)号:US11935856B2
公开(公告)日:2024-03-19
申请号:US17352657
申请日:2021-06-21
发明人: Jong Sik Paek , Doo Hyun Park
IPC分类号: H01L23/00 , H01L21/56 , H01L23/31 , H01L23/538 , H01L25/10
CPC分类号: H01L24/17 , H01L21/56 , H01L21/568 , H01L23/3135 , H01L24/19 , H01L24/85 , H01L25/105 , H01L23/5389 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/81 , H01L24/92 , H01L2224/0401 , H01L2224/04042 , H01L2224/04105 , H01L2224/12105 , H01L2224/131 , H01L2224/13147 , H01L2224/16225 , H01L2224/32225 , H01L2224/45099 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73267 , H01L2224/81005 , H01L2224/81203 , H01L2224/81815 , H01L2224/85 , H01L2224/92125 , H01L2225/1011 , H01L2225/1023 , H01L2225/1035 , H01L2225/1041 , H01L2225/1058 , H01L2225/107 , H01L2924/00012 , H01L2924/00014 , H01L2924/12042 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H01L2924/18161 , H01L2924/18162 , H01L2924/19107 , H01L2924/3511 , H01L2224/131 , H01L2924/014 , H01L2924/00014 , H01L2224/45099 , H01L2924/15311 , H01L2224/73204 , H01L2224/16225 , H01L2224/32225 , H01L2924/00 , H01L2924/181 , H01L2924/00 , H01L2924/12042 , H01L2924/00 , H01L2924/181 , H01L2924/00012
摘要: A semiconductor device and manufacturing method thereof. Various aspects of the disclosure may, for example, comprise forming a back end of line layer on a dummy substrate, completing at least a first portion of an assembly, and removing the dummy substrate.
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公开(公告)号:US20230387808A1
公开(公告)日:2023-11-30
申请号:US18345259
申请日:2023-06-30
IPC分类号: H02M3/335 , H01L23/495 , H01L23/00 , H01L23/552 , H02M7/00 , H01L23/48 , H01L23/28 , H01L23/31 , H01L23/58 , H01L25/065 , H01L25/18 , H04B5/00
CPC分类号: H02M3/33507 , H02M7/2176 , H01L24/48 , H01L24/49 , H01L23/552 , H02M3/33523 , H02M3/33592 , H01L23/49541 , H02M7/003 , H01L23/48 , H01L23/28 , H01L23/3107 , H01L23/58 , H01L25/0655 , H01L25/18 , H04B5/0031 , H04B5/0081 , H01L2224/4911 , H01L2224/48465 , H01L2224/4903 , H01L2924/00014 , H01L2924/181 , H01L2224/48247 , H01L2224/48257 , H01L2224/49111 , H01L2224/49171 , H01L2924/19107 , H01L23/49575
摘要: An integrated circuit package includes a lead frame and an encapsulation that substantially encloses the lead frame. The lead frame further includes a first conductor comprising a first conductive loop and a second conductor galvanically isolated from the first conductor, proximate to and magnetically coupled to the first conductive loop to provide a communication link between the first and second conductor. The second conductor includes a first conductive portion, a second conductive portion, and a wire coupling together the first conductive portion and the second conductive portion.
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公开(公告)号:US11735563B2
公开(公告)日:2023-08-22
申请号:US17512123
申请日:2021-10-27
申请人: Invensas LLC
发明人: Ellis Chau , Reynaldo Co , Roseann Alatorre , Philip Damberg , Wei-Shun Wang , Se Young Yang
IPC分类号: H01L23/00 , H01L23/31 , H01L23/498 , H01L21/56 , H01L25/10 , H01L25/00 , H01L23/495 , H01L21/48 , H01L23/367 , H01L23/433 , H01L25/065 , H05K3/34
CPC分类号: H01L24/85 , H01L21/4853 , H01L21/56 , H01L23/3128 , H01L23/3677 , H01L23/4334 , H01L23/49517 , H01L23/49811 , H01L23/49816 , H01L24/06 , H01L24/43 , H01L24/78 , H01L25/105 , H01L25/50 , H01L21/565 , H01L23/3114 , H01L24/16 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/0655 , H01L25/0657 , H01L2224/0401 , H01L2224/05599 , H01L2224/131 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/45015 , H01L2224/4554 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/4824 , H01L2224/48091 , H01L2224/48145 , H01L2224/48227 , H01L2224/48245 , H01L2224/48247 , H01L2224/48997 , H01L2224/49171 , H01L2224/73204 , H01L2224/73207 , H01L2224/73253 , H01L2224/73257 , H01L2224/73265 , H01L2224/78301 , H01L2224/851 , H01L2224/8518 , H01L2224/85399 , H01L2224/85951 , H01L2224/85986 , H01L2225/0651 , H01L2225/06506 , H01L2225/06513 , H01L2225/06517 , H01L2225/06558 , H01L2225/06562 , H01L2225/06565 , H01L2225/06568 , H01L2225/1023 , H01L2225/1029 , H01L2225/1052 , H01L2225/1058 , H01L2225/1088 , H01L2225/1094 , H01L2924/00011 , H01L2924/00012 , H01L2924/00014 , H01L2924/01013 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/01049 , H01L2924/12042 , H01L2924/1431 , H01L2924/1434 , H01L2924/15311 , H01L2924/15331 , H01L2924/1715 , H01L2924/181 , H01L2924/1815 , H01L2924/19107 , H01L2924/3511 , H05K3/3436 , H05K2201/1053 , H05K2201/10515 , Y10T29/49149 , Y10T29/49151 , H01L2224/45565 , H01L2224/45147 , H01L2224/45664 , H01L2224/45565 , H01L2224/45144 , H01L2224/45664 , H01L2924/19107 , H01L2224/45144 , H01L2224/45565 , H01L2224/45664 , H01L2924/19107 , H01L2224/45147 , H01L2224/45565 , H01L2224/45664 , H01L2224/78301 , H01L2924/00014 , H01L2224/85986 , H01L2224/8518 , H01L2224/85951 , H01L2224/49171 , H01L2224/48227 , H01L2924/00 , H01L2224/49171 , H01L2224/48247 , H01L2924/00 , H01L2224/4824 , H01L2224/49171 , H01L2924/00 , H01L2224/73265 , H01L2224/32145 , H01L2224/48227 , H01L2924/00012 , H01L2224/73265 , H01L2224/32225 , H01L2224/48227 , H01L2924/00012 , H01L2224/73265 , H01L2224/32145 , H01L2224/48145 , H01L2924/00012 , H01L2224/73265 , H01L2224/32245 , H01L2224/48247 , H01L2924/00012 , H01L2224/45144 , H01L2924/00 , H01L2224/45124 , H01L2924/00 , H01L2224/45147 , H01L2924/00 , H01L2224/73265 , H01L2224/32145 , H01L2224/48247 , H01L2924/00 , H01L2224/73204 , H01L2224/16225 , H01L2224/32225 , H01L2924/00 , H01L2224/73265 , H01L2224/32245 , H01L2224/48227 , H01L2924/00 , H01L2224/73265 , H01L2224/32225 , H01L2224/48247 , H01L2924/00 , H01L2224/73204 , H01L2224/16145 , H01L2224/32145 , H01L2924/00 , H01L2224/131 , H01L2924/014 , H01L2924/15311 , H01L2224/73265 , H01L2224/32225 , H01L2224/48227 , H01L2924/00 , H01L2924/15311 , H01L2224/73204 , H01L2224/16225 , H01L2224/32225 , H01L2924/00 , H01L2924/01047 , H01L2924/00 , H01L2224/48091 , H01L2924/00014 , H01L2224/45015 , H01L2924/00 , H01L2224/45144 , H01L2924/00014 , H01L2224/45147 , H01L2924/00014 , H01L2924/181 , H01L2924/00 , H01L2924/12042 , H01L2924/00 , H01L2924/181 , H01L2924/00012 , H01L2224/45015 , H01L2924/20751 , H01L2224/45015 , H01L2924/20752 , H01L2224/45015 , H01L2924/20753 , H01L2224/45015 , H01L2924/20754 , H01L2224/45015 , H01L2924/20755 , H01L2224/45015 , H01L2924/20756 , H01L2224/45015 , H01L2924/20757 , H01L2224/45015 , H01L2924/20758 , H01L2224/45015 , H01L2924/20759 , H01L2224/45015 , H01L2924/2076 , H01L2224/85399 , H01L2924/00014 , H01L2224/05599 , H01L2924/00014 , H01L2924/00011 , H01L2924/01049
摘要: A microelectronic package includes a substrate having a first surface. A microelectronic element overlies the first surface. Electrically conductive elements are exposed at the first surface of the substrate, at least some of which are electrically connected to the microelectronic element. The package includes wire bonds having bases bonded to respective ones of the conductive elements and ends remote from the substrate and remote from the bases. The ends of the wire bonds are defined on tips of the wire bonds, and the wire bonds define respective first diameters between the bases and the tips thereof. The tips have at least one dimension that is smaller than the respective first diameters of the wire bonds. A dielectric encapsulation layer covers portions of the wire bonds, and unencapsulated portions of the wire bonds are defined by portions of the wire bonds, including the ends, are uncovered by the encapsulation layer.
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公开(公告)号:US20230253382A1
公开(公告)日:2023-08-10
申请号:US18162489
申请日:2023-01-31
发明人: Kazuhito TANAKA
CPC分类号: H01L25/16 , H01L24/48 , H01L2224/4814 , H01L2924/1432 , H01L2924/1436 , H01L2924/19043 , H01L2924/19107
摘要: A semiconductor package according to the present disclosure includes: a plurality of semiconductor chips that include a system on chip (SoC) in which a plurality of integrated circuits including a processor core and a microcomputer are integrated on a single chip; a power management integrated circuit (IC) for performing power management on the plurality of semiconductor chips; a plurality of shunt resistors each of which is mounted in series on a different one of power wires connecting the power management IC and the plurality of semiconductor chips; two output terminals; and a single selector that outputs voltages at both ends of a shunt resistor to an outside via the two output terminals, the shunt resistor being selected from among the plurality of shunt resistors. The power management IC, the plurality of semiconductor chips, the plurality of shunt resistors, and the single selector are mounted inside a single package.
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公开(公告)号:US11715701B2
公开(公告)日:2023-08-01
申请号:US16386774
申请日:2019-04-17
发明人: Yuusuke Takano , Yoshiaki Goto , Takeshi Watanabe , Takashi Imoto
IPC分类号: H01L23/552 , H01L21/66 , H01L23/00 , H01L23/31 , G01R31/28
CPC分类号: H01L23/552 , H01L22/14 , H01L24/48 , H01L24/49 , G01R31/2853 , H01L23/3128 , H01L2224/48095 , H01L2224/48227 , H01L2224/48228 , H01L2224/49 , H01L2924/00014 , H01L2924/15192 , H01L2924/15311 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19107 , H01L2924/15787 , H01L2924/00 , H01L2924/15788 , H01L2924/00 , H01L2924/00014 , H01L2224/45099 , H01L2224/48095 , H01L2924/00014 , H01L2924/00014 , H01L2224/05599 , H01L2924/181 , H01L2924/00012
摘要: According to one embodiment, a semiconductor device includes a wiring board that has a first surface and a second surface opposed to the first surface, a semiconductor chip provided on the first surface, external connection terminals provided on the second surface, a sealing resin layer provided on the first surface, and a conductive shield layer that covers at least a portion of a side surface of the wiring board and the sealing resin layer. The wiring board includes a first ground wire that is electrically connected to the conductive shield layer, and a second ground wire that is electrically connected to the conductive shield layer and is electrically insulated from the first ground wire.
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