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公开(公告)号:US12011355B2
公开(公告)日:2024-06-18
申请号:US18420381
申请日:2024-01-23
IPC分类号: A61F2/30 , A61F2/32 , A61L27/30 , A61L27/56 , B22F3/11 , B22F5/10 , B22F10/28 , B22F10/38 , B23K26/382 , B29C37/00 , B29C45/14 , B33Y70/00 , B33Y80/00 , C23C4/02 , C23C4/18 , C23C24/10 , C23C26/02 , A61F2/34 , A61F2/36 , A61F2/38 , B22F10/32 , B22F10/36 , B22F10/366 , B22F10/62 , B22F10/64 , B22F12/41 , B29L31/00 , B33Y10/00
CPC分类号: A61F2/30907 , A61F2/30 , A61L27/306 , A61L27/56 , B22F3/1109 , B22F5/10 , B22F10/28 , B22F10/38 , B23K26/382 , B29C37/0082 , B29C45/14311 , B33Y70/00 , B33Y80/00 , C23C4/02 , C23C4/18 , C23C24/10 , C23C26/02 , A61F2002/30011 , A61F2002/30199 , A61F2002/30243 , A61F2002/30261 , A61F2002/3028 , A61F2002/30329 , A61F2002/30593 , A61F2002/30594 , A61F2/30756 , A61F2/30767 , A61F2002/30915 , A61F2002/3092 , A61F2/3094 , A61F2/30965 , A61F2002/30968 , A61F2002/3097 , A61F2002/30971 , A61F2/32 , A61F2002/3401 , A61F2002/3425 , A61F2/36 , A61F2/3877 , A61F2220/0025 , A61F2230/0063 , A61F2230/0071 , A61F2230/0082 , A61F2250/0023 , B22F10/32 , B22F10/36 , B22F10/366 , B22F10/62 , B22F10/64 , B22F12/41 , B22F2999/00 , B29C2045/14327 , B29L2031/7532 , B33Y10/00 , Y02P10/25
摘要: A method of forming an implant having a porous tissue ingrowth structure and a bearing support structure. The method includes depositing a first layer of a metal powder onto a substrate, scanning a laser beam over the powder so as to sinter the metal powder at predetermined locations, depositing at least one layer of the metal powder onto the first layer and repeating the scanning of the laser beam.
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公开(公告)号:US20240017850A1
公开(公告)日:2024-01-18
申请号:US18165714
申请日:2023-02-07
IPC分类号: B64F5/10 , B23K26/382
CPC分类号: B64F5/10 , B23K26/382 , B64D29/00
摘要: A method for producing a nacelle inlet assembly includes forming a composite panel that has a carbon fiber reinforced polymer (CFRP) material. The composite panel is formed to have a curved contour that represents at least a portion of an annular barrel shape. The method includes applying a metallic coating to the composite panel to form a lipskin. The metallic coating is applied such that the metallic coating defines an exterior surface of the lipskin and the composite panel defines an interior surface of the lipskin. The method includes laser drilling a plurality of perforations through the lipskin. The laser drilling involves emitting a laser beam that impinges upon the interior surface of the lipskin and penetrates the CFRP material of the composite panel before penetrating the metallic coating and exiting the lipskin through the exterior surface.
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3.
公开(公告)号:US20230201970A1
公开(公告)日:2023-06-29
申请号:US18175557
申请日:2023-02-28
IPC分类号: B23K26/382 , B23K26/0622 , B23K26/00 , H01L21/48 , B23K26/53 , B23K26/064 , B23K26/402
CPC分类号: B23K26/382 , B23K26/0006 , B23K26/53 , B23K26/064 , B23K26/402 , B23K26/0624 , H01L21/486 , B23K2103/54
摘要: A substrate comprises glass, sapphire, silicon and/or aluminosilicate, and has at least one recess or through-opening. The at least one recess or through-opening is formed by anisotropic removal of substrate material by etching a portion of the substrate that has been modified by a pulse of laser radiation in a direction of a thickness of the substrate. The modified portion of the substrate extends along a beam axis of the laser radiation. The pulse of laser radiation was applied with a focus extending from a first focal depth positioned past one side of the substrate to a second focal depth located at an opposite side of the substrate.
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公开(公告)号:US11676832B2
公开(公告)日:2023-06-13
申请号:US16938517
申请日:2020-07-24
发明人: Kurtis Leschkies , Jeffrey L. Franklin , Wei-Sheng Lei , Steven Verhaverbeke , Jean Delmas , Han-Wen Chen , Giback Park
IPC分类号: H01L21/67 , H01L21/48 , B23K26/0622 , B23K26/382 , H01L23/498 , H01L23/31
CPC分类号: H01L21/67121 , B23K26/0622 , B23K26/382 , H01L21/486 , H01L23/3121 , H01L23/49827
摘要: The present disclosure relates to systems and methods for fabricating semiconductor packages, and more particularly, for forming features in semiconductor packages by laser ablation. In one embodiment, the laser systems and methods described herein can be utilized to pattern a substrate to be utilized as a package frame for a semiconductor package having one or more interconnections formed therethrough and/or one or more semiconductor dies disposed therein. The laser systems described herein can produce tunable laser beams for forming features in a substrate or other package structure. Specifically, frequency, pulse width, pulse shape, and pulse energy of laser beams are tunable based on desired sizes of patterned features and on the material in which the patterned features are formed. The adjustability of the laser beams enables rapid and accurate formation of features in semiconductor substrates and packages with controlled depth and topography.
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公开(公告)号:US20230141278A1
公开(公告)日:2023-05-11
申请号:US17910948
申请日:2021-03-09
发明人: Niklas Weckenmann , Jannik Lind
IPC分类号: B23K26/0622 , B23K26/382
CPC分类号: B23K26/0622 , B23K26/382
摘要: A method for piercing a workpiece by means of a laser beam includes radiating a pulsed laser beam onto a workpiece to form a piercing breakthrough, wherein a radiated mean pulse power (Pmittel) of the pulsed laser beam is reduced during piercing.
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公开(公告)号:US20180309018A1
公开(公告)日:2018-10-25
申请号:US15962772
申请日:2018-04-25
申请人: DISCO CORPORATION
发明人: Naotoshi Kirihara
CPC分类号: H01L33/005 , B23K26/0006 , B23K26/0622 , B23K26/083 , B23K26/0869 , B23K26/382 , B23K26/53 , B23K2101/40 , H01L21/78 , H01L33/0095
摘要: A method of processing a wafer includes applying a laser beam having a wavelength that is transmittable through a sapphire substrate to the wafer while positioning a focused spot of the beam within the wafer in regions corresponding to projected dicing lines through a reverse side of the wafer, thereby forming a plurality of shield tunnels made up of a plurality of pores and an amorphous body surrounding the pores, at predetermined spaced intervals in the wafer along the projected dicing lines. A laser beam having a wavelength that is transmittable through the sapphire substrate to the wafer is applied while positioning a focused spot of the laser beam within the wafer in the projected dicing lines through the reverse side of the wafer, thereby forming modified layers between adjacent shield tunnels. Exerting external forces to the wafer divides the wafer into a plurality of optical device chips.
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公开(公告)号:US20180163477A1
公开(公告)日:2018-06-14
申请号:US15821411
申请日:2017-11-22
申请人: Foro Energy, Inc.
发明人: Brian O. Faircloth , Ian Lee , Andrey Kuznetsov
IPC分类号: E21B7/15 , H01S5/024 , H01S5/40 , H01S5/00 , H01S5/022 , H01S5/042 , B23K26/00 , B23K26/06 , B23K26/046 , B23K26/08 , B23K26/382 , B23K26/70
CPC分类号: E21B7/15 , B23K26/0096 , B23K26/046 , B23K26/0608 , B23K26/0869 , B23K26/382 , B23K26/703 , E21B29/02 , E21B37/00 , E21B43/11 , G02B6/3624 , G02B6/4296 , G02B6/4417 , G02B6/4427 , H01S5/0071 , H01S5/02296 , H01S5/02423 , H01S5/042 , H01S5/4025
摘要: Systems, apparatus and methods for performing laser operations in boreholes and other remote locations, such operations including laser drilling of a borehole in the earth. Systems, apparatus and methods for generating and delivering high power laser energy below the surface of the earth and within a borehole. Laser operations using such downhole generated laser beams.
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公开(公告)号:US20180161939A1
公开(公告)日:2018-06-14
申请号:US15580931
申请日:2016-06-10
发明人: Steven R. MAYNARD
IPC分类号: B23K26/382 , B23K26/073
CPC分类号: B23K26/382 , B23K26/073 , B23K26/0734
摘要: Systems and methods for laser drilling provide laser beam energy modification to reduce (e.g., eliminate or minimize) back-wall strikes during laser drilling. The systems and methods modify the process laser beam energy such that a beam energy at a central region of the process laser beam is less than a beam energy at an outer region of the process laser beam. In one example, the modified process beam has zero beam energy at the central region, thereby providing a “donut mode.” The laser beam energy modification may be achieved by detuning a fiber coupler in the Z axis such that laser energy is coupled into a cladding layer of the process fiber coupled to the laser fiber via the fiber coupler.
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公开(公告)号:US09969030B2
公开(公告)日:2018-05-15
申请号:US15153369
申请日:2016-05-12
申请人: Pacesetter, Inc.
IPC分类号: B23K26/362 , H01G9/08 , H01G9/048 , H01G9/045 , H01G9/042 , H01G9/008 , H01G9/02 , H01G9/00 , B23K26/0622 , B23K26/08 , B23K103/10
CPC分类号: B23K26/362 , B23K26/0624 , B23K26/064 , B23K26/0676 , B23K26/083 , B23K26/0838 , B23K26/0846 , B23K26/0876 , B23K26/382 , B23K26/40 , B23K2101/16 , B23K2101/18 , B23K2101/38 , B23K2103/10 , H01G9/0029 , H01G9/008 , H01G9/02 , H01G9/042 , H01G9/045 , H01G9/048 , H01G9/08
摘要: A capacitor and methods of processing an anode metal foil are presented. The capacitor includes a housing, one or more anodes disposed within the housing, one or more cathodes disposed within the housing, one or more separators disposed between an adjacent anode and cathode, and an electrolyte disposed around the one or more anodes, one or more cathodes, and one or more separators within the housing. The one or more anodes each include a metal foil that includes a first plurality of tunnels through a thickness of the metal foil in a first ordered arrangement, the first ordered arrangement being a close packed hexagonal array arrangement, and having a first diameter, and a second plurality of tunnels through the thickness of the metal foil having a second ordered arrangement and a second diameter greater than the first diameter.
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10.
公开(公告)号:US09953912B2
公开(公告)日:2018-04-24
申请号:US15138656
申请日:2016-04-26
申请人: CORNING INCORPORATED
发明人: Uta-Barbara Goers
IPC分类号: B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L23/498 , B23K26/18 , B23K26/0622 , B23K26/382 , H01L21/48 , H05K3/00 , H05K3/40
CPC分类号: H01L23/49827 , B23K26/0622 , B23K26/18 , B23K26/382 , H01L21/486 , H01L23/49838 , H01L23/49894 , H05K3/002 , H05K3/0029 , H05K3/4038 , H05K2203/1383
摘要: Work pieces and methods of forming through holes in substrates are disclosed. In one embodiment, a method of forming a through hole in a substrate by drilling includes affixing an exit sacrificial cover layer to a laser beam exit surface of the substrate, positioning a laser beam in a predetermined location relative to the substrate and corresponding to a desired location for the through hole, and forming the through hole by repeatedly pulsing the laser beam into an entrance surface of the substrate and through a bulk of the substrate. The method further includes forming a hole in the exit sacrificial cover layer by repeatedly pulsing the laser beam into the through hole formed in the substrate such that the laser beam passes through the laser beam exit surface of the substrate and into the exit sacrificial cover layer.
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