METHOD FOR PRODUCING A PERFORATED NACELLE INLET ASSEMBLY

    公开(公告)号:US20240017850A1

    公开(公告)日:2024-01-18

    申请号:US18165714

    申请日:2023-02-07

    IPC分类号: B64F5/10 B23K26/382

    CPC分类号: B64F5/10 B23K26/382 B64D29/00

    摘要: A method for producing a nacelle inlet assembly includes forming a composite panel that has a carbon fiber reinforced polymer (CFRP) material. The composite panel is formed to have a curved contour that represents at least a portion of an annular barrel shape. The method includes applying a metallic coating to the composite panel to form a lipskin. The metallic coating is applied such that the metallic coating defines an exterior surface of the lipskin and the composite panel defines an interior surface of the lipskin. The method includes laser drilling a plurality of perforations through the lipskin. The laser drilling involves emitting a laser beam that impinges upon the interior surface of the lipskin and penetrates the CFRP material of the composite panel before penetrating the metallic coating and exiting the lipskin through the exterior surface.

    METHOD OF PROCESSING WAFER
    6.
    发明申请

    公开(公告)号:US20180309018A1

    公开(公告)日:2018-10-25

    申请号:US15962772

    申请日:2018-04-25

    申请人: DISCO CORPORATION

    发明人: Naotoshi Kirihara

    IPC分类号: H01L33/00 H01L21/78

    摘要: A method of processing a wafer includes applying a laser beam having a wavelength that is transmittable through a sapphire substrate to the wafer while positioning a focused spot of the beam within the wafer in regions corresponding to projected dicing lines through a reverse side of the wafer, thereby forming a plurality of shield tunnels made up of a plurality of pores and an amorphous body surrounding the pores, at predetermined spaced intervals in the wafer along the projected dicing lines. A laser beam having a wavelength that is transmittable through the sapphire substrate to the wafer is applied while positioning a focused spot of the laser beam within the wafer in the projected dicing lines through the reverse side of the wafer, thereby forming modified layers between adjacent shield tunnels. Exerting external forces to the wafer divides the wafer into a plurality of optical device chips.

    LASER BEAM ENERGY MODIFICATION TO REDUCE BACK-WALL STRIKES DURING LASER DRILLING

    公开(公告)号:US20180161939A1

    公开(公告)日:2018-06-14

    申请号:US15580931

    申请日:2016-06-10

    发明人: Steven R. MAYNARD

    IPC分类号: B23K26/382 B23K26/073

    摘要: Systems and methods for laser drilling provide laser beam energy modification to reduce (e.g., eliminate or minimize) back-wall strikes during laser drilling. The systems and methods modify the process laser beam energy such that a beam energy at a central region of the process laser beam is less than a beam energy at an outer region of the process laser beam. In one example, the modified process beam has zero beam energy at the central region, thereby providing a “donut mode.” The laser beam energy modification may be achieved by detuning a fiber coupler in the Z axis such that laser energy is coupled into a cladding layer of the process fiber coupled to the laser fiber via the fiber coupler.