公开(公告)号：US11964343B2

公开(公告)日：2024-04-23

申请号：US17183777

申请日：2021-02-24

申请人： Applied Materials, Inc.

发明人： Mahendran Chidambaram ,  Shmuel Erez ,  Wei-Sheng Lei ,  John Rusconi

IPC分类号： B23K26/362 ,  B23K26/06 ,  B23K103/00

CPC分类号： B23K26/362 ,  B23K26/0643 ,  B23K26/0648 ,  B23K2103/50

摘要： A process of producing optical devices is provided including transferring a first substrate comprising one or more devices to a laser dicing tool, the laser dicing tool including a filamentation stage and a singulation stage. One or more device contours are created on the first substrate in the filamentation stage. The optical devices are singulated from the first substrate along the one or more device contours in the singulation stage. The devices are transferred to storage or for further backend processing.

公开(公告)号：US11232951B1

公开(公告)日：2022-01-25

申请号：US16928252

申请日：2020-07-14

申请人： Applied Materials, Inc.

发明人： Wei-Sheng Lei ,  Kurtis Leschkies ,  Roman Gouk ,  Steven Verhaverbeke ,  Visweswaren Sivaramakrishnan

IPC分类号： H01L21/268 ,  H01L21/768 ,  B23K26/386 ,  H01L21/68 ,  B23K26/00 ,  H01L21/67

摘要： In an embodiment is provided a method of forming a blind via in a substrate comprising a mask layer, a conductive layer, and a dielectric layer that includes conveying the substrate to a scanning chamber; determining one or more properties of the blind via, the one or more properties comprising a top diameter, a bottom diameter, a volume, or a taper angle of about 80° or more; focusing a laser beam at the substrate to remove at least a portion of the mask layer; adjusting the laser process parameters based on the one or more properties; and focusing the laser beam, under the adjusted laser process parameters, to remove at least a portion of the dielectric layer within the volume to form the blind via. In some embodiments, the mask layer can be pre-etched. In another embodiment is provided an apparatus for forming a blind via in a substrate.

公开(公告)号：US11158540B2

公开(公告)日：2021-10-26

申请号：US15606456

申请日：2017-05-26

申请人： APPLIED MATERIALS, INC.

发明人： Wenguang Li ,  James S. Papanu ,  Wei-Sheng Lei ,  Prabhat Kumar ,  Brad Eaton ,  Ajay Kumar ,  Alexander N. Lerner

IPC分类号： H01L21/78 ,  H01L21/311 ,  H01L21/02 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/308

摘要： Light-absorbing masks and methods of dicing semiconductor wafers are described. In an example, a method of dicing a semiconductor wafer including a plurality of integrated circuits involves forming a mask above the semiconductor wafer. The mask includes a water-soluble matrix based on a solid component and water, and a light-absorber species throughout the water-soluble matrix. The mask and a portion of the semiconductor wafer are patterned with a laser scribing process to provide a patterned mask with gaps and corresponding trenches in the semiconductor wafer in regions between the integrated circuits. The semiconductor wafer is plasma etched through the gaps in the patterned mask to extend the trenches and to singulate the integrated circuits. The patterned mask protects the integrated circuits during the plasma etching.

公开(公告)号：US20210134676A1

公开(公告)日：2021-05-06

申请号：US17137099

申请日：2020-12-29

申请人： Applied Materials, Inc.

发明人： Wei-Sheng Lei ,  Brad Eaton ,  Madhava Rao Yalamanchili ,  Saravjeet Singh ,  Ajay Kumar ,  James M. Holden

IPC分类号： H01L21/822 ,  H01L21/308 ,  H01L21/67 ,  H01L21/78 ,  H01J37/32 ,  H01L23/544 ,  B23K26/36 ,  H01L21/3065

摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The mask and a portion of the semiconductor wafer are patterned with a laser scribing process to provide a patterned mask and to form trenches partially into but not through the semiconductor wafer between the integrated circuits. Each of the trenches has a width. The semiconductor wafer is plasma etched through the trenches to form corresponding trench extensions and to singulate the integrated circuits. Each of the corresponding trench extensions has the width.

公开(公告)号：US10163713B2

公开(公告)日：2018-12-25

申请号：US15005700

申请日：2016-01-25

申请人： Applied Materials, Inc.

发明人： Wei-Sheng Lei ,  Brad Eaton ,  Madhava Rao Yalamanchili ,  Saravjeet Singh ,  Ajay Kumar ,  James M. Holden

IPC分类号： H01L21/00 ,  H01L21/822 ,  H01L21/78 ,  H01L21/308 ,  H01J37/32 ,  H01L23/544 ,  B23K26/36 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/683

摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The mask and a portion of the semiconductor wafer are patterned with a laser scribing process to provide a patterned mask and to form trenches partially into but not through the semiconductor wafer between the integrated circuits. Each of the trenches has a width. The semiconductor wafer is plasma etched through the trenches to form corresponding trench extensions and to singulate the integrated circuits. Each of the corresponding trench extensions has the width.

公开(公告)号：US09972575B2

公开(公告)日：2018-05-15

申请号：US15060224

申请日：2016-03-03

申请人： APPLIED MATERIALS, INC.

发明人： Jungrae Park ,  Wei-Sheng Lei ,  Brad Eaton ,  James S. Papanu ,  Ajay Kumar

IPC分类号： H01L21/78 ,  H01L23/544 ,  B23K26/0622 ,  B23K10/00 ,  A47G19/22 ,  B65D47/24 ,  B65D47/32

CPC分类号： H01L23/544 ,  A47G19/22 ,  A47G19/2272 ,  B23K10/003 ,  B23K26/0624 ,  B65D47/244 ,  B65D47/32 ,  H01L21/78 ,  H01L2223/5446

摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a split laser beam laser scribing process, such as a split shaped laser beam laser scribing process, to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.

公开(公告)号：US09852997B2

公开(公告)日：2017-12-26

申请号：US15081296

申请日：2016-03-25

申请人： APPLIED MATERIALS, INC.

发明人： Jungrae Park ,  Wei-Sheng Lei ,  James S. Papanu ,  Brad Eaton ,  Ajay Kumar

IPC分类号： H01L21/00 ,  H01L23/544 ,  H01L21/78 ,  B23K26/359 ,  B23K26/064 ,  B23K26/364

CPC分类号： B23K26/064 ,  B23K26/0006 ,  B23K26/0624 ,  B23K26/355 ,  B23K26/359 ,  B23K26/364 ,  B23K26/402 ,  B23K2101/40 ,  B23K2101/42 ,  H01L21/78

摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a rotating laser beam laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.

公开(公告)号：US09620379B2

公开(公告)日：2017-04-11

申请号：US14775651

申请日：2014-03-11

申请人： APPLIED MATERIALS, INC.

发明人： Wei-Sheng Lei ,  Mohammad Kamruzzaman Chowdhury ,  Todd Egan ,  Brad Eaton ,  Madhava Rao Yalamanchili ,  Ajay Kumar

IPC分类号： H01L21/67 ,  H01L21/78 ,  H01L21/308 ,  H01L21/3065 ,  B23K26/364 ,  B23K26/40 ,  B23K26/402 ,  H01L21/673 ,  H01L21/687 ,  H01L21/82 ,  B23K103/16 ,  B23K103/00

CPC分类号： H01L21/3086 ,  B23K26/364 ,  B23K26/40 ,  B23K26/402 ,  B23K2103/172 ,  B23K2103/50 ,  B23K2103/56 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/67069 ,  H01L21/67196 ,  H01L21/67207 ,  H01L21/67383 ,  H01L21/68707 ,  H01L21/78 ,  H01L21/82

摘要： Methods of dicing substrates having a plurality of ICs. A method includes forming a multi-layered mask comprising a laser energy absorbing, non-photodefinable topcoat disposed over a water-soluble base layer disposed over the semiconductor substrate. Because the laser light absorbing material layer is non-photodefinable, material costs associated with conventional photo resist formulations may be avoided. The mask is direct-write patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. Absorption of the mask layer within the laser emission band (e.g., UV band and/or green band) promotes good scribe line quality. The substrate may then be plasma etched through the gaps in the patterned mask to singulate the IC with the mask protecting the ICs during the plasma etch. The soluble base layer of the mask may then be dissolved subsequent to singulation, facilitating removal of the layer.

公开(公告)号：US09343366B2

公开(公告)日：2016-05-17

申请号：US14543747

申请日：2014-11-17

申请人： Applied Materials, Inc.

发明人： Wei-Sheng Lei ,  James S. Papanu ,  Aparna Iyer ,  Brad Eaton ,  Ajay Kumar

IPC分类号： H01L21/00 ,  H01L21/78 ,  H01L21/683 ,  H01L21/268 ,  H01L21/3065 ,  H01L25/065 ,  H01L23/00

CPC分类号： H01L21/78 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/6836 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/0401 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/12041 ,  H01L2224/11 ,  H01L2924/00

摘要： Approaches for hybrid laser scribe and plasma etch dicing process for a wafer having backside solder bumps are described. For example, a method of dicing a semiconductor wafer having integrated circuits on a front side thereof and corresponding arrays of metal bumps on a backside thereof involves applying a dicing tape to the backside of the semiconductor wafer, the dicing tape covering the arrays of metal bumps. The method also involves, subsequently, forming a mask on the front side of the semiconductor wafer, the mask covering the integrated circuits. The method also involves forming scribe lines on the front side of the semiconductor wafer with a laser scribing process, the scribe lines formed in the mask and between the integrated circuits. The method also involves plasma etching the semiconductor wafer through the scribe lines to singulate the integrated circuits, the mask protecting the integrated circuits during the plasma etching.

摘要翻译： 描述了具有背面焊料凸块的晶片的混合激光划片和等离子体蚀刻切割工艺的方法。 例如，在其前侧具有集成电路的半导体晶片的切割方法和背面的金属凸块的相应阵列包括在半导体晶片的背面施加切割带，该切割带覆盖金属凸块的阵列 。 该方法还包括在半导体晶片的正面上形成掩模，该掩模覆盖集成电路。 该方法还涉及通过激光划线工艺在半导体晶片的正面上形成刻划线，在掩模中形成划线并在集成电路之间。 该方法还包括通过划线等离子体蚀刻半导体晶片以对集成电路进行分离，掩模在等离子体蚀刻期间保护集成电路。

公开(公告)号：US08969177B2

公开(公告)日：2015-03-03

申请号：US13917568

申请日：2013-06-13

申请人： Applied Materials, Inc.

发明人： Mohammad Kamruzzaman Chowdhury ,  Wei-Sheng Lei ,  Todd Egan ,  Brad Eaton ,  Madhava Rao Yalamanchili ,  Ajay Kumar

IPC分类号： H01L21/00 ,  H01L21/78 ,  B23K26/36 ,  H01L21/67 ,  B23K26/06 ,  B23K26/18 ,  B23K26/40

CPC分类号： H01L21/67155 ,  B23K26/0624 ,  B23K26/0661 ,  B23K26/18 ,  B23K26/361 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/67207 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L2221/68327 ,  H01L2221/68381

摘要： Laser and plasma etch wafer dicing using UV-curable adhesive films. A mask is formed covering ICs formed on the wafer, as well as any bumps providing an interface to the ICs. The semiconductor wafer is coupled to a carrier substrate by a double-sided UV-curable adhesive film. The mask is patterned by laser scribing to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer, below thin film layers from which the ICs are formed. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the ICs. The UV-curable adhesive film is partially cured by UV irradiation through the carrier. The singulated ICs are then detached from the partially cured adhesive film still attached to the carrier substrate, for example individually by a pick and place machine. The UV-curable adhesive film may then be further cured for the film's complete removal from the carrier substrate.

摘要翻译： 激光和等离子体蚀刻晶圆切割使用紫外光固化粘合膜。 形成覆盖在晶片上形成的IC的掩模，以及提供与IC的接口的任何凸块。 半导体晶片通过双面UV固化粘合剂膜耦合到载体基板。 通过激光划线将掩模图案化以提供具有间隙的图案化掩模。 图案化使得半导体晶片的区域在形成IC的薄膜层之下露出。 然后通过图案化掩模中的间隙蚀刻半导体晶片，以对IC进行单片化。 UV固化粘合剂膜通过载体的UV照射部分固化。 然后将分离的IC从仍然附着到载体基底上的部分固化的粘合剂膜分离，例如通过拾取和放置机单独分离。 然后可以进一步固化可UV固化的粘合剂膜，以使膜完全从载体基材上除去。