公开(公告)号：US11927885B2

公开(公告)日：2024-03-12

申请号：US17883422

申请日：2022-08-08

Applicant: Applied Materials, Inc.

Inventor： Roman Gouk ,  Jean Delmas ,  Steven Verhaverbeke ,  Chintan Buch

IPC: G03F7/00 ,  B29C45/37 ,  B29C59/02 ,  B29K23/00 ,  H01L21/027 ,  H01L21/768

CPC classification number: G03F7/0002 ,  B29C45/372 ,  B29C59/022 ,  H01L21/0274 ,  H01L21/76817 ,  B29K2023/16

Abstract: An imprint lithography stamp includes a stamp body having a patterned surface and formed from a fluorinated ethylene propylene copolymer. The imprint lithography stamp further includes a backing plate with a plurality of through-holes with portions of the stamp body extending into the through-holes to adhere the stamp body to the backing plate. The patterned surface of the stamp body has a plurality of protrusions extending from the stamp body, which are used to form high aspect ratio features at high processing temperatures. A mold design for forming the imprint lithography stamp and an injection molding process for forming the imprint lithography stamp are also provided.

公开(公告)号：US11837680B2

公开(公告)日：2023-12-05

申请号：US17747408

申请日：2022-05-18

Applicant: Applied Materials, Inc.

Inventor： Han-Wen Chen ,  Steven Verhaverbeke ,  Giback Park

IPC: H01L31/18 ,  H01L21/027 ,  H01L21/304 ,  H01L21/768 ,  H01L21/308 ,  H01L21/306 ,  H01L21/48 ,  H01L23/498 ,  H01L21/683

CPC classification number: H01L31/1804 ,  H01L21/0275 ,  H01L21/3046 ,  H01L21/3086 ,  H01L21/30621 ,  H01L21/486 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/49827 ,  H01L31/1892 ,  H01L2221/68345 ,  Y02E10/547

Abstract: The present disclosure relates to methods and apparatus for structuring a semiconductor substrate. In one embodiment, a method of substrate structuring includes applying a resist layer to a substrate optionally disposed on a carrier. The resist layer is patterned using ultraviolet radiation or laser ablation. The patterned portions of the resist layer are then transferred onto the substrate by micro-blasting to form desired features in the substrate while unexposed or un-ablated portions of the resist layer shield the rest of the substrate. The substrate is then exposed to an etch process and a de-bonding process to remove the resist layer and release the carrier.

公开(公告)号：US11454884B2

公开(公告)日：2022-09-27

申请号：US16849393

申请日：2020-04-15

Applicant: Applied Materials, Inc.

Inventor： Roman Gouk ,  Jean Delmas ,  Steven Verhaverbeke ,  Chintan Buch

IPC: G03F7/00 ,  H01L21/027 ,  H01L21/768

Abstract: An imprint lithography stamp includes a stamp body having a patterned surface and formed from a fluorinated ethylene propylene copolymer. The imprint lithography stamp further includes a backing plate with a plurality of through-holes with portions of the stamp body extending into the through-holes to adhere the stamp body to the backing plate. The patterned surface of the stamp body has a plurality of protrusions extending from the stamp body, which are used to form high aspect ratio features at high processing temperatures. A mold design for forming the imprint lithography stamp and an injection molding process for forming the imprint lithography stamp are also provided.

公开(公告)号：US11388822B2

公开(公告)日：2022-07-12

申请号：US17005954

申请日：2020-08-28

Applicant: Applied Materials, Inc.

Inventor： Tapash Chakraborty ,  Steven Verhaverbeke ,  Han-Wen Chen ,  Chintan Buch ,  Prerna Goradia ,  Giback Park ,  Kyuil Cho

IPC: H05K1/02 ,  H05K3/00 ,  H05K3/06 ,  H05K3/28 ,  H05K3/46 ,  H05K3/38 ,  B32B15/08 ,  B32B7/12

Abstract: Methods for forming circuit boards and circuit boards using an adhesion layer are described. A substrate with two surfaces is exposed to a bifunctional organic compound to form an adhesion layer on the first substrate surface. A resin layer is then deposited on the adhesion layer and the exposed substrate surfaces. Portions of the resin layer may be removed to expose metal pads for contacts.

公开(公告)号：US11264331B2

公开(公告)日：2022-03-01

申请号：US16687567

申请日：2019-11-18

Applicant: Applied Materials, Inc.

Inventor： Han-Wen Chen ,  Steven Verhaverbeke ,  Giback Park ,  Giorgio Cellere ,  Diego Tonini ,  Vincent Dicaprio ,  Kyuil Cho

IPC: H01L23/495 ,  H01L23/538 ,  H01L21/48 ,  H01L23/13 ,  H01L23/14 ,  H01L23/498 ,  H01L25/10 ,  H01L23/66 ,  H01Q1/22 ,  H01Q1/24 ,  H05K1/02 ,  H01L21/50 ,  H01L21/768 ,  H01L25/065 ,  H01L27/06 ,  H01L21/60

Abstract: The present disclosure relates to methods and apparatus for forming a thin-form-factor semiconductor package. In one embodiment, a glass or silicon substrate is structured by micro-blasting or laser ablation to form structures for formation of interconnections therethrough. The substrate is thereafter utilized as a frame for forming a semiconductor package with embedded dies therein.

公开(公告)号：US10283344B2

公开(公告)日：2019-05-07

申请号：US15325419

申请日：2015-07-10

Applicant: Applied Materials, Inc.

Inventor： Steven Verhaverbeke ,  Han-Wen Chen ,  Roman Gouk ,  Kurtis Leschkies

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/67

Abstract: The present disclosure generally relates to apparatus and methods for forming a low-k dielectric material on a substrate. The method includes various substrate processing steps utilizing a wet processing chamber, a solvent exchange chamber, and a supercritical fluid chamber. More specifically, a dielectric material in an aqueous solution may be deposited on the substrate and a solvent exchange process may be performed to prepare the substrate for a supercritical drying process. During the supercritical drying process, liquids present in the solution and remaining on the substrate from the solvent exchange process are removed via sublimation during the supercritical drying process. The resulting dielectric material formed on the substrate may be considered a silica aerogel which exhibits a very low k-value.

公开(公告)号：US10096516B1

公开(公告)日：2018-10-09

申请号：US15681320

申请日：2017-08-18

Applicant: Applied Materials, Inc.

Inventor： Kurtis Leschkies ,  Steven Verhaverbeke

IPC: H01L21/768 ,  H01L21/02

Abstract: Embodiments of the disclosure generally relate to a method of improving quality of a barrier layer suitable for forming high aspect ratio through substrate vias. In one example, a method for depositing a barrier layer includes depositing a barrier layer in a hole formed in a substrate, exposing the deposited barrier layer to a processing gas at a pressure greater than about 2 bars, and, maintaining a temperature of the substrate between about 150 degrees and about 700 degrees Celsius while in the presence of the processing gas.

公开(公告)号：US08852962B2

公开(公告)日：2014-10-07

申请号：US13659555

申请日：2012-10-24

Applicant: Applied Materials, Inc.

Inventor： Steven Verhaverbeke ,  Roman Gouk ,  Li-Qun Xia ,  Mei-yee Shek ,  Yu Jin

IPC: H01L21/02 ,  G11B5/74 ,  G11B5/84 ,  H01L21/67 ,  H01L21/677 ,  H01L21/033 ,  H01F41/34

CPC classification number: H01F41/34 ,  G11B5/743 ,  G11B5/84 ,  H01L21/0332 ,  H01L21/67161 ,  H01L21/67736

Abstract: Embodiments of the present invention provide methods and apparatus for forming a patterned magnetic layer for use in magnetic media. According to embodiments of the present application, a silicon oxide layer formed by low temperature chemical vapor deposition is used to form a pattern in a hard mask layer, and the patterned hard mask is used to form a patterned magnetic layer by plasma ion implantation.

Abstract translation: 本发明的实施例提供了用于形成用于磁性介质的图案化磁性层的方法和装置。 根据本申请的实施例，使用通过低温化学气相沉积形成的氧化硅层在硬掩模层中形成图案，并且使用图案化的硬掩模通过等离子体离子注入形成图案化的磁性层。

公开(公告)号：US11715700B2

公开(公告)日：2023-08-01

申请号：US17227983

申请日：2021-04-12

Applicant: Applied Materials, Inc.

Inventor： Han-Wen Chen ,  Steven Verhaverbeke ,  Guan Huei See ,  Giback Park ,  Giorgio Cellere ,  Diego Tonini ,  Vincent Dicaprio ,  Kyuil Cho

IPC: H01L23/538 ,  H01L21/48 ,  H01L23/13 ,  H01L23/14 ,  H01L23/498 ,  H01L25/10 ,  H01L23/66 ,  H01Q1/22 ,  H01Q1/24 ,  H05K1/02 ,  H01L21/50 ,  H01L21/768 ,  H01L25/065 ,  H01L27/06 ,  H01L21/60

CPC classification number: H01L23/5389 ,  H01L21/486 ,  H01L21/4864 ,  H01L21/50 ,  H01L21/76802 ,  H01L23/13 ,  H01L23/147 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49866 ,  H01L23/49894 ,  H01L23/5384 ,  H01L23/5385 ,  H01L23/5386 ,  H01L23/66 ,  H01L25/0657 ,  H01L25/105 ,  H01L27/0688 ,  H01Q1/2283 ,  H01Q1/243 ,  H05K1/0243 ,  H01L2021/60007 ,  H01L2225/107 ,  H01L2225/1035

Abstract: The present disclosure relates to thin-form-factor reconstituted substrates and methods for forming the same. The reconstituted substrates described herein may be utilized to fabricate homogeneous or heterogeneous high-density 3D integrated devices. In one embodiment, a silicon substrate is structured by direct laser patterning to include one or more cavities and one or more vias. One or more semiconductor dies of the same or different types may be placed within the cavities and thereafter embedded in the substrate upon formation of an insulating layer thereon. One or more conductive interconnections are formed in the vias and may have contact points redistributed to desired surfaces of the reconstituted substrate. The reconstituted substrate may thereafter be integrated into a stacked 3D device.

公开(公告)号：US11424137B2

公开(公告)日：2022-08-23

申请号：US16417124

申请日：2019-05-20

Applicant: Applied Materials, Inc.

Inventor： Roman Gouk ,  Han-Wen Chen ,  Steven Verhaverbeke ,  Jean Delmas

IPC: H01L21/67 ,  C11D11/00 ,  H01L21/02 ,  H01L21/687 ,  H01L21/677 ,  B08B7/00

Abstract: Embodiments described herein generally relate to a processing chamber incorporating a small thermal mass which enable efficient temperature cycling for supercritical drying processes. The chamber generally includes a body, a liner, and an insulation element which enables the liner to exhibit a small thermal mass relative to the body. The chamber is also configured with suitable apparatus for generating and/or maintaining supercritical fluid within a processing volume of the chamber.