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19 条记录 (耗时 0.017 秒)

    Laser processing method
    1.
    发明授权
    Laser processing method 有权

    公开(公告)号：US11833608B2

    公开(公告)日：2023-12-05

    申请号：US17653564

    申请日：2022-03-04

    申请人： DISCO CORPORATION

    发明人： Naotoshi Kirihara ,  Takamasa Kaneko

    IPC分类号： B23K26/0622 ,  B23K26/40 ,  B23K26/352 ,  B23K26/364 ,  B23K101/40

    CPC分类号： B23K26/0622 ,  B23K26/352 ,  B23K26/364 ,  B23K26/40 ,  B23K2101/40

    摘要： There is provided a laser processing method for performing laser processing on a wafer having a functional layer on a substrate. The laser processing method includes a blackening step of emitting a pulsed laser beam of a wavelength transparent to the functional layer from a laser oscillator and blackening the functional layer by irradiating the functional layer with the pulsed laser beam of energy equal to or higher than a processing threshold value at which the functional layer is processed such that an overlap ratio of the pulsed laser beam successively applied to the functional layer is equal to or more than 90% and less than 100%, and a groove processing step of forming a laser-processed groove by irradiating the blackened functional layer with the pulsed laser beam and making the blackened functional layer absorb the pulsed laser beam, after performing the blackening step.

    WAFER DIVIDER AND WAFER DIVISION METHOD
    2.
    发明申请
    WAFER DIVIDER AND WAFER DIVISION METHOD 有权
    WAFER DIVIDER和WAFER DIVISION方法

    公开(公告)号：US20160247723A1

    公开(公告)日：2016-08-25

    申请号：US15046672

    申请日：2016-02-18

    申请人： DISCO CORPORATION

    发明人： Naotoshi Kirihara

    IPC分类号： H01L21/78 ,  B28D5/00

    CPC分类号： H01L21/78 ,  B28D5/0011 ,  B28D5/0029 ,  B28D5/0052 ,  H01L21/67092 ,  H01L21/6875 ,  H01L21/68785

    摘要： A divider which divides a wafer having a division start points formed along the scheduled divisions into a plurality of device chips. The divider includes a placement table on which a wafer is placed, and division unit adapted to divide the wafer on the placement table into a plurality of device chips starting from the division start points. The placement table includes: a plurality of spherical bodies having the same diameter; a container that accommodates the plurality of spherical bodies in close contact with each other; and a placement surface formed by connecting vertices of spherical surfaces of the plurality of spherical bodies that are accommodated in close contact with each other.

    摘要翻译： 分割器，其将具有沿预定分割点形成的分割开始点的晶片分成多个器件芯片。 分配器包括放置晶片的放置台，以及分割单元，适于将放置台上的晶片从分割开始点开始划分为多个器件芯片。 放置台包括：具有相同直径的多个球体; 容纳多个彼此紧密接触的球体的容器; 以及通过将容纳在彼此紧密接触的多个球体的球面的顶点连接而形成的放置面。

    Laser processing apparatus
    3.
    发明授权
    Laser processing apparatus 有权

    公开(公告)号：US10692740B2

    公开(公告)日：2020-06-23

    申请号：US15586921

    申请日：2017-05-04

    申请人： DISCO CORPORATION

    发明人： Naotoshi Kirihara

    IPC分类号： H01L21/67 ,  B23K26/0622 ,  B23K26/351 ,  B23K26/382 ,  H01L21/687 ,  H01L21/78 ,  B23K26/359 ,  B23K101/40

    摘要： A laser oscillator of a laser processing apparatus generates burst pulses each composed of a plurality of sub-pulses. The plurality of sub-pulses are generated in such a manner that the energy of the sub-pulse sequentially changes from a lower energy to a higher energy, and the burst pulses are applied to a wafer, whereby the wafer is formed therein with shield tunnels extending from the front surface to the back surface of the wafer and each being composed of a minute hole and an amorphous phase surrounding the minute hole.

    Laser processing method for wafer
    5.
    发明授权
    Laser processing method for wafer 有权

    公开(公告)号：US10573559B2

    公开(公告)日：2020-02-25

    申请号：US16195190

    申请日：2018-11-19

    申请人： DISCO CORPORATION

    发明人： Naotoshi Kirihara

    IPC分类号： H01L21/301 ,  H01L21/78 ,  H01L21/268 ,  H01L21/67 ,  B23K26/53 ,  B23K26/0622 ,  B23K26/06 ,  B23K26/08 ,  B23K26/386 ,  H01L21/66 ,  B23K26/00 ,  B23K103/00 ,  B23K101/40

    摘要： A laser processing method for a wafer includes: linearly forming a plurality of shield tunnels each having a fine hole and an amorphous region surrounding the fine hole at predetermined intervals in an inner part of a test substrate, the test substrate having a material and a thickness identical to those of a substrate of the wafer to be processed, while changing time intervals of a plurality of pulses constituting a burst pulse laser beam; and measuring a rupture strength when the test substrate is ruptured along the plurality of shield tunnels. Next, the time intervals of the pulses when the rupture strength is at a minimum are calculated, and a laser processing step is performed which linearly forms a plurality of shield tunnels at predetermined intervals in an inner part of the wafer, by irradiating the wafer with the laser beam having the time intervals of the pulses.

    OPTICAL DEVICE AND MANUFACTURING METHOD THEREFOR
    8.
    发明申请
    OPTICAL DEVICE AND MANUFACTURING METHOD THEREFOR 审中-公开
    光学器件及其制造方法

    公开(公告)号：US20150214432A1

    公开(公告)日：2015-07-30

    申请号：US14601859

    申请日：2015-01-21

    申请人： DISCO CORPORATION

    发明人： Naotoshi Kirihara ,  Chikara Aikawa ,  Yusaku Ito ,  Taro Arakawa ,  Yang Tzuchun

    IPC分类号： H01L33/24 ,  H01L33/00

    CPC分类号： H01L33/20 ,  H01L33/0095

    摘要： An optical device including a substrate and a light emitting layer formed on the front surface of the substrate. The back surface of the substrate is formed with a concave portion like a crater. The concave portion is formed by applying a laser beam having an absorption wavelength to an optical device wafer. In the optical device, light emitted from the light emitting layer strikes the inner surface of the concave portion and is next irregularly reflected from the inner surface of the concave portion.

    摘要翻译： 一种光学器件，包括形成在基板的前表面上的基板和发光层。 基板的背面形成有像凹坑的凹部。 通过将具有吸收波长的激光束施加到光学器件晶片来形成凹部。 在光学装置中，从发光层射出的光从凹部的内表面射出，然后从凹部的内表面不规则地反射。

    Method of processing wafer
    9.
    发明授权
    Method of processing wafer 有权

    公开(公告)号：US10297710B2

    公开(公告)日：2019-05-21

    申请号：US15962772

    申请日：2018-04-25

    申请人： DISCO CORPORATION

    发明人： Naotoshi Kirihara

    IPC分类号： B23K26/00 ,  B23K26/08 ,  B23K26/53 ,  H01L21/78 ,  H01L33/00 ,  B23K101/40 ,  B23K26/382 ,  B23K26/0622

    摘要： A method of processing a wafer includes applying a laser beam having a wavelength that is transmittable through a sapphire substrate to the wafer while positioning a focused spot of the beam within the wafer in regions corresponding to projected dicing lines through a reverse side of the wafer, thereby forming a plurality of shield tunnels made up of a plurality of pores and an amorphous body surrounding the pores, at predetermined spaced intervals in the wafer along the projected dicing lines. A laser beam having a wavelength that is transmittable through the sapphire substrate to the wafer is applied while positioning a focused spot of the laser beam within the wafer in the projected dicing lines through the reverse side of the wafer, thereby forming modified layers between adjacent shield tunnels. Exerting external forces to the wafer divides the wafer into a plurality of optical device chips.

    LASER PROCESSING APPARATUS
    10.
    发明申请
    LASER PROCESSING APPARATUS 审中-公开

    公开(公告)号：US20170330774A1

    公开(公告)日：2017-11-16

    申请号：US15586921

    申请日：2017-05-04

    申请人： DISCO CORPORATION

    发明人： Naotoshi Kirihara

    IPC分类号： H01L21/67 ,  H01L21/687 ,  B23K26/382 ,  B23K26/351 ,  H01L21/78 ,  B23K26/0622 ,  B23K101/40

    摘要： A laser oscillator of a laser processing apparatus generates burst pulses each composed of a plurality of sub-pulses. The plurality of sub-pulses are generated in such a manner that the energy of the sub-pulse sequentially changes from a lower energy to a higher energy, and the burst pulses are applied to a wafer, whereby the wafer is formed therein with shield tunnels extending from the front surface to the back surface of the wafer and each being composed of a minute hole and an amorphous phase surrounding the minute hole.