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公开(公告)号：CN101989557B
公开(公告)日：2012-10-10
申请号：CN201010243543.8
申请日：2010-07-30
Applicant: 株式会社东芝
IPC: H01L21/60 , H01L23/485
CPC classification number: H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/16 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/81 , H01L2224/02311 , H01L2224/02381 , H01L2224/0401 , H01L2224/04042 , H01L2224/05008 , H01L2224/05548 , H01L2224/05569 , H01L2224/05571 , H01L2224/05572 , H01L2224/05666 , H01L2224/0603 , H01L2224/06051 , H01L2224/11462 , H01L2224/1147 , H01L2224/11849 , H01L2224/13083 , H01L2224/13099 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/16145 , H01L2224/2919 , H01L2224/32145 , H01L2224/45144 , H01L2224/48666 , H01L2224/73204 , H01L2224/73207 , H01L2224/73215 , H01L2224/81191 , H01L2924/00013 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00 , H01L2224/05552 , H01L2224/45015 , H01L2924/207
Abstract: 本发明一般涉及半导体装置的制造方法以及半导体装置。根据本发明，在具有作为第1导电层的电极端子的基板上使感光性树脂膜改性，形成具有到达电极端子的第1开口和第2开口的绝缘层。接着，在包含第1开口内的绝缘层上形成与电极端子电连接的第2导电层，在第2导电层上形成第3导电层，该第3导电层与第1导电层的氧化还原电位之差小于第1导电层与第2导电层的氧化还原电位之差。接着，使感光性树脂膜改性，形成具有到达第3导电层的第3开口、和经由第2开口到达电极端子的第4开口的绝缘层，并形成与第3导电层电连接的凸块。
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公开(公告)号：CN102386160B
公开(公告)日：2016-06-01
申请号：CN201110256133.1
申请日：2011-08-31
Applicant: 株式会社东芝
IPC: H01L23/488 , H01L21/60
CPC classification number: H01L24/05 , H01L23/3192 , H01L24/03 , H01L24/11 , H01L24/13 , H01L24/81 , H01L2224/0231 , H01L2224/02311 , H01L2224/02313 , H01L2224/02331 , H01L2224/0235 , H01L2224/02381 , H01L2224/0239 , H01L2224/024 , H01L2224/0345 , H01L2224/03452 , H01L2224/0346 , H01L2224/03462 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05018 , H01L2224/05022 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05558 , H01L2224/05567 , H01L2224/05647 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/05684 , H01L2224/11462 , H01L2224/1147 , H01L2224/11849 , H01L2224/119 , H01L2224/11901 , H01L2224/13076 , H01L2224/1308 , H01L2224/13083 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/818 , H01L2224/81801 , H01L2224/8185 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/01022 , H01L2924/04941 , H01L2924/01027 , H01L2924/01046 , H01L2924/01025 , H01L2924/0541 , H01L2224/05552 , H01L2924/00 , H01L2224/1146
Abstract: 公开一种半导体装置及半导体装置的制造方法。根据实施例，设置半导体基板、金属膜、表面改性层和再布线。半导体基板上形成了布线及焊盘电极。金属膜在所述半导体基板上形成。表面改性层在所述金属膜的表层形成，提高与光刻胶图形的贴紧性。再布线隔着所述表面改性层在所述金属膜上形成。
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Patent Agency Ranking
公开(公告)号：CN1210792C
公开(公告)日：2005-07-13
申请号：CN02160291.3
申请日：2002-08-29
Applicant: 株式会社东芝
IPC: H01L23/48 , H01L21/28 , H01L21/768 , H01L21/60
CPC classification number: H01L24/12 , H01L21/486 , H01L23/147 , H01L23/481 , H01L23/49827 , H01L24/11 , H01L24/16 , H01L24/45 , H01L24/48 , H01L24/75 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2224/02126 , H01L2224/0401 , H01L2224/05027 , H01L2224/05546 , H01L2224/05557 , H01L2224/05558 , H01L2224/05572 , H01L2224/10126 , H01L2224/1147 , H01L2224/13022 , H01L2224/131 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/16145 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/48799 , H01L2224/73204 , H01L2224/75 , H01L2224/7565 , H01L2224/75745 , H01L2224/75753 , H01L2224/81201 , H01L2224/81205 , H01L2224/81801 , H01L2224/81895 , H01L2224/8191 , H01L2224/81948 , H01L2225/0651 , H01L2225/06513 , H01L2225/06541 , H01L2924/00013 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/04953 , H01L2924/09701 , H01L2924/10253 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/15311 , H01L2224/13099 , H01L2924/00 , H01L2224/05552 , H01L2224/05599
Abstract: 一种半导体器件，包括：在基板上所形成的第一电极；所述第一电极上的凹型形状的下突起金属膜；以及埋设在所述下突起金属膜的凹型形状内部的，侧面和底面由所述下突起金属膜围绕的突起电极。
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公开(公告)号：CN102386160A
公开(公告)日：2012-03-21
申请号：CN201110256133.1
申请日：2011-08-31
Applicant: 株式会社东芝
IPC: H01L23/488 , H01L21/60
CPC classification number: H01L24/05 , H01L23/3192 , H01L24/03 , H01L24/11 , H01L24/13 , H01L24/81 , H01L2224/0231 , H01L2224/02311 , H01L2224/02313 , H01L2224/02331 , H01L2224/0235 , H01L2224/02381 , H01L2224/0239 , H01L2224/024 , H01L2224/0345 , H01L2224/03452 , H01L2224/0346 , H01L2224/03462 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05018 , H01L2224/05022 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05558 , H01L2224/05567 , H01L2224/05647 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/05684 , H01L2224/11462 , H01L2224/1147 , H01L2224/11849 , H01L2224/119 , H01L2224/11901 , H01L2224/13076 , H01L2224/1308 , H01L2224/13083 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/818 , H01L2224/81801 , H01L2224/8185 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/01022 , H01L2924/04941 , H01L2924/01027 , H01L2924/01046 , H01L2924/01025 , H01L2924/0541 , H01L2224/05552 , H01L2924/00 , H01L2224/1146
Abstract: 公开一种半导体装置及半导体装置的制造方法。根据实施例，设置半导体基板、金属膜、表面改性层和再布线。半导体基板上形成了布线及焊盘电极。金属膜在所述半导体基板上形成。表面改性层在所述金属膜的表层形成，提高与光刻胶图形的贴紧性。再布线隔着所述表面改性层在所述金属膜上形成。
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公开(公告)号：CN101989557A
公开(公告)日：2011-03-23
申请号：CN201010243543.8
申请日：2010-07-30
Applicant: 株式会社东芝
IPC: H01L21/60 , H01L23/485
CPC classification number: H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/16 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/81 , H01L2224/02311 , H01L2224/02381 , H01L2224/0401 , H01L2224/04042 , H01L2224/05008 , H01L2224/05548 , H01L2224/05569 , H01L2224/05571 , H01L2224/05572 , H01L2224/05666 , H01L2224/0603 , H01L2224/06051 , H01L2224/11462 , H01L2224/1147 , H01L2224/11849 , H01L2224/13083 , H01L2224/13099 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/16145 , H01L2224/2919 , H01L2224/32145 , H01L2224/45144 , H01L2224/48666 , H01L2224/73204 , H01L2224/73207 , H01L2224/73215 , H01L2224/81191 , H01L2924/00013 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00 , H01L2224/05552 , H01L2224/45015 , H01L2924/207
Abstract: 本发明一般涉及半导体装置的制造方法以及半导体装置。根据本发明，在具有作为第1导电层的电极端子的基板上使感光性树脂膜改性，形成具有到达电极端子的第1开口和第2开口的绝缘层。接着，在包含第1开口内的绝缘层上形成与电极端子电连接的第2导电层，在第2导电层上形成第3导电层，该第3导电层与第1导电层的氧化还原电位之差小于第1导电层与第2导电层的氧化还原电位之差。接着，使感光性树脂膜改性，形成具有到达第3导电层的第3开口、和经由第2开口到达电极端子的第4开口的绝缘层，并形成与第3导电层电连接的凸块。
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公开(公告)号：CN1627480A
公开(公告)日：2005-06-15
申请号：CN200410011580.0
申请日：2002-08-29
Applicant: 株式会社东芝
CPC classification number: H01L24/12 , H01L21/486 , H01L23/147 , H01L23/481 , H01L23/49827 , H01L24/11 , H01L24/16 , H01L24/45 , H01L24/48 , H01L24/75 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2224/02126 , H01L2224/0401 , H01L2224/05027 , H01L2224/05546 , H01L2224/05557 , H01L2224/05558 , H01L2224/05572 , H01L2224/10126 , H01L2224/1147 , H01L2224/13022 , H01L2224/131 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/16145 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/48799 , H01L2224/73204 , H01L2224/75 , H01L2224/7565 , H01L2224/75745 , H01L2224/75753 , H01L2224/81201 , H01L2224/81205 , H01L2224/81801 , H01L2224/81895 , H01L2224/8191 , H01L2224/81948 , H01L2225/0651 , H01L2225/06513 , H01L2225/06541 , H01L2924/00013 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/04953 , H01L2924/09701 , H01L2924/10253 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/15311 , H01L2224/13099 , H01L2924/00 , H01L2224/05552 , H01L2224/05599
Abstract: 一种半导体器件的制造方法，包括以下工序：形成具有第一电极的第一基板；形成具有第二电极的第二基板；在所述第一电极、第二电极的至少一方的表面上附着活性化前的溶剂；使所述第二电极通过所述溶剂而与所述第一电极相接触，在压缩所述第一电极和第二电极的方向上加压；以及在所述第一电极与第二电极之间的接合之前，在未到达所述第一电极和第二电极的较低一方的熔点温度的温度下，使所述溶剂活性化。
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公开(公告)号：CN1419285A
公开(公告)日：2003-05-21
申请号：CN02160291.3
申请日：2002-08-29
Applicant: 株式会社东芝
IPC: H01L23/48 , H01L21/28 , H01L21/768 , H01L21/60
CPC classification number: H01L24/12 , H01L21/486 , H01L23/147 , H01L23/481 , H01L23/49827 , H01L24/11 , H01L24/16 , H01L24/45 , H01L24/48 , H01L24/75 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2224/02126 , H01L2224/0401 , H01L2224/05027 , H01L2224/05546 , H01L2224/05557 , H01L2224/05558 , H01L2224/05572 , H01L2224/10126 , H01L2224/1147 , H01L2224/13022 , H01L2224/131 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/16145 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/48799 , H01L2224/73204 , H01L2224/75 , H01L2224/7565 , H01L2224/75745 , H01L2224/75753 , H01L2224/81201 , H01L2224/81205 , H01L2224/81801 , H01L2224/81895 , H01L2224/8191 , H01L2224/81948 , H01L2225/0651 , H01L2225/06513 , H01L2225/06541 , H01L2924/00013 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/04953 , H01L2924/09701 , H01L2924/10253 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/15311 , H01L2224/13099 , H01L2924/00 , H01L2224/05552 , H01L2224/05599
Abstract: 一种半导体器件，包括：在基板上所形成的第一电极；所述第一电极上的凹型形状的下突起金属膜；以及埋设在所述下突起金属膜的凹型形状内部的，侧面和底面由所述下突起金属膜围绕的突起电极。
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