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公开(公告)号:CN102132409A
公开(公告)日:2011-07-20
申请号:CN200980134153.2
申请日:2009-09-11
Applicant: 松下电器产业株式会社
CPC classification number: H01L33/62 , H01L21/76898 , H01L23/481 , H01L27/14618 , H01L2224/0554 , H01L2224/05573 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/13025 , H01L2224/16225 , H01L2924/00014 , H01L2924/01055 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
Abstract: 形成半导体元件(6)的贯通孔导体部上部(9’)及贯通孔导体部下部(9),使得贯通孔导体部上部(9’)与贯通孔导体部下部(9)的接合面的孔径(A)小于贯通孔导体部上部(9’)在半导体元件(6)一主面侧的孔径(B)、以及贯通孔导体部下部(9)在半导体元件(6)另一面侧的孔径(C),在贯通孔导体部上部(9’)的上表面形成电极部(3),并在电极部(3)的上表面形成突起部(4),利用粘接剂(8)将光学构件(7)以按压在该突起部(4)的状态固接在半导体元件(6)上。
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公开(公告)号:CN1917197B
公开(公告)日:2010-05-12
申请号:CN200610108481.3
申请日:2006-08-04
Applicant: 松下电器产业株式会社
IPC: H01L23/488 , H01L21/607
CPC classification number: H01L24/85 , H01L21/2007 , H01L21/563 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/28 , H01L24/45 , H01L24/48 , H01L24/81 , H01L2224/0401 , H01L2224/04042 , H01L2224/05644 , H01L2224/13099 , H01L2224/13124 , H01L2224/16225 , H01L2224/32225 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48455 , H01L2224/4847 , H01L2224/48599 , H01L2224/48644 , H01L2224/48699 , H01L2224/73203 , H01L2224/73204 , H01L2224/81191 , H01L2224/81801 , H01L2224/83102 , H01L2224/85 , H01L2224/85205 , H01L2224/92125 , H01L2924/0001 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/014 , H01L2924/10253 , H01L2924/10329 , H01L2924/14 , H01L2924/1461 , H01L2924/15311 , H01L2224/78 , H01L2924/00 , H01L2224/48744 , H01L2924/00015
Abstract: 本发明是关于接合结构和接合方法的发明。本发明的目的在于提供一种成本低而又能使硅和铝的稳固接合成为可能的接合结构和接合方法。通过楔形挤压具(wedge tool)的使用,使铝导线向硅电极压紧,并施加超声波,从而使两者接合在一起。由此,在接合部,物质按照铝、铝氧化物、硅氧化物、硅的顺序重叠在一起,从而形成稳固的接合结构。
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公开(公告)号:CN100423258C
公开(公告)日:2008-10-01
申请号:CN200310113857.6
申请日:2003-10-31
Applicant: 松下电器产业株式会社
IPC: H01L25/065 , H01L25/16 , H01L25/18 , H01L21/58 , H01L21/60
CPC classification number: H01L21/561 , H01L21/563 , H01L23/3121 , H01L24/11 , H01L24/12 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/97 , H01L25/0657 , H01L29/0657 , H01L2224/0401 , H01L2224/05553 , H01L2224/05554 , H01L2224/05624 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13144 , H01L2224/16225 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48471 , H01L2224/48624 , H01L2224/4943 , H01L2224/73203 , H01L2224/73204 , H01L2224/73265 , H01L2224/78301 , H01L2224/83191 , H01L2224/83855 , H01L2224/85181 , H01L2224/85186 , H01L2224/97 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06527 , H01L2225/06555 , H01L2225/06586 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01204 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/10162 , H01L2924/12042 , H01L2924/14 , H01L2924/15787 , H01L2924/181 , H01L2924/19103 , H01L2924/19105 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/351 , H01L2224/85 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/01046 , H01L2924/00012 , H01L2924/00011 , H01L2924/3512 , H01L2224/92247 , H01L2224/4554
Abstract: 在将2块半导体芯片层叠安装在布线基板上的结构中,在上侧的第2半导体芯片比下侧的第1半导体芯片充分大的情况下,提供了可改善连接第2半导体芯片与布线基板的金属细丝的连接可靠性的半导体器件及其制造方法。在该半导体器件中,在用粘结剂粘结第1半导体芯片的背面与第2半导体芯片的背面的同时,粘结剂的侧部从第1半导体芯片的端部朝向第2半导体芯片的超出第1半导体芯片侧面的部分倾斜。因此,既可抑制因将第2半导体芯片电连接到布线基板上的对金属细丝的冲击而在第2半导体芯片中发生微裂痕,又可抑制发生金属细丝的键合不良。
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公开(公告)号:CN101022098A
公开(公告)日:2007-08-22
申请号:CN200610143304.9
申请日:2006-11-03
Applicant: 松下电器产业株式会社
IPC: H01L23/48 , H01L21/60 , H01L21/607
CPC classification number: H01L24/10 , B23K20/004 , B23K20/10 , B23K35/002 , B23K35/0227 , B23K35/286 , B23K35/3601 , B23K2101/32 , B23K2101/40 , B23K2103/10 , B23K2103/18 , B23K2103/50 , B23K2103/56 , H01L21/563 , H01L24/05 , H01L24/13 , H01L24/45 , H01L24/48 , H01L24/81 , H01L24/85 , H01L2224/0401 , H01L2224/04042 , H01L2224/05556 , H01L2224/13 , H01L2224/13099 , H01L2224/13124 , H01L2224/16 , H01L2224/16225 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/4807 , H01L2224/48091 , H01L2224/48247 , H01L2224/48458 , H01L2224/4847 , H01L2224/48472 , H01L2224/48599 , H01L2224/48699 , H01L2224/73203 , H01L2224/73204 , H01L2224/81205 , H01L2224/81801 , H01L2224/85205 , H01L2224/8582 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/10271 , H01L2924/10329 , H01L2924/12032 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00015 , H01L2924/013 , H01L2924/0002
Abstract: 能够以低成本进行Si和Al的可靠连接。连接结构体(1)是Si电极(Si构件)(40)和Al引线(Al构件)(20)的连接结构体。在Si电极(40)和Al引线(20)之间夹装有第一部分(2)、第二部分(4、4…)及第二部分(14、14…),第一部分(2)、第二部分(4、4…)及第二部分(14、14…)均与Si电极(40)相接,且与Al引线(20)相接。在第一部分(2)存在Si氧化物层(13)及Al氧化物层(23),Si氧化物层(13)与Si电极(40)相接,Al氧化物层(23)介于Si氧化物层(13)和Al引线(20)之间。在第二部分(4、4…)存在Al,在第二部分(14、14…)存在Si部(14a)及Al部(14b)。
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公开(公告)号:CN1519928A
公开(公告)日:2004-08-11
申请号:CN200310113857.6
申请日:2003-10-31
Applicant: 松下电器产业株式会社
IPC: H01L25/065 , H01L25/16 , H01L25/18 , H01L21/58 , H01L21/60
CPC classification number: H01L21/561 , H01L21/563 , H01L23/3121 , H01L24/11 , H01L24/12 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/97 , H01L25/0657 , H01L29/0657 , H01L2224/0401 , H01L2224/05553 , H01L2224/05554 , H01L2224/05624 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13144 , H01L2224/16225 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48471 , H01L2224/48624 , H01L2224/4943 , H01L2224/73203 , H01L2224/73204 , H01L2224/73265 , H01L2224/78301 , H01L2224/83191 , H01L2224/83855 , H01L2224/85181 , H01L2224/85186 , H01L2224/97 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06527 , H01L2225/06555 , H01L2225/06586 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01204 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/10162 , H01L2924/12042 , H01L2924/14 , H01L2924/15787 , H01L2924/181 , H01L2924/19103 , H01L2924/19105 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/351 , H01L2224/85 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/01046 , H01L2924/00012 , H01L2924/00011 , H01L2924/3512 , H01L2224/92247 , H01L2224/4554
Abstract: 在将2块半导体芯片层叠安装在布线基板上的结构中,在上侧的第2半导体芯片比下侧的第1半导体芯片充分大的情况下,提供了可改善连接第2半导体芯片与布线基板的金属细丝的连接可靠性的半导体器件及其制造方法。在该半导体器件中,在用粘结剂粘结第1半导体芯片的背面与第2半导体芯片的背面的同时,粘结剂的侧部从第1半导体芯片的端部朝向第2半导体芯片的超出第1半导体芯片侧面的部分倾斜。因此,既可抑制因将第2半导体芯片电连接到布线基板上的对金属细丝的冲击而在第2半导体芯片中发生微裂痕,又可抑制发生金属细丝的键合不良。
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公开(公告)号:CN101022098B
公开(公告)日:2010-05-12
申请号:CN200610143304.9
申请日:2006-11-03
Applicant: 松下电器产业株式会社
IPC: H01L23/48 , H01L21/60 , H01L21/607
CPC classification number: H01L24/10 , B23K20/004 , B23K20/10 , B23K35/002 , B23K35/0227 , B23K35/286 , B23K35/3601 , B23K2101/32 , B23K2101/40 , B23K2103/10 , B23K2103/18 , B23K2103/50 , B23K2103/56 , H01L21/563 , H01L24/05 , H01L24/13 , H01L24/45 , H01L24/48 , H01L24/81 , H01L24/85 , H01L2224/0401 , H01L2224/04042 , H01L2224/05556 , H01L2224/13 , H01L2224/13099 , H01L2224/13124 , H01L2224/16 , H01L2224/16225 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/4807 , H01L2224/48091 , H01L2224/48247 , H01L2224/48458 , H01L2224/4847 , H01L2224/48472 , H01L2224/48599 , H01L2224/48699 , H01L2224/73203 , H01L2224/73204 , H01L2224/81205 , H01L2224/81801 , H01L2224/85205 , H01L2224/8582 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/10271 , H01L2924/10329 , H01L2924/12032 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00015 , H01L2924/013 , H01L2924/0002
Abstract: 能够以低成本进行Si和Al的可靠连接。连接结构体(1)是Si电极(Si构件)(40)和Al引线(Al构件)(20)的连接结构体。在Si电极(40)和Al引线(20)之间夹装有第一部分(2)、第二部分(4、4…)及第二部分(14、14…),第一部分(2)、第二部分(4、4…)及第二部分(14、14…)均与Si电极(40)相接,且与Al引线(20)相接。在第一部分(2)存在Si氧化物层(13)及Al氧化物层(23),Si氧化物层(13)与Si电极(40)相接,Al氧化物层(23)介于Si氧化物层(13)和Al引线(20)之间。在第二部分(4、4…)存在Al,在第二部分(14、14…)存在Si部(14a)及Al部(14b)。
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公开(公告)号:CN101442064A
公开(公告)日:2009-05-27
申请号:CN200810169138.9
申请日:2008-10-22
Applicant: 松下电器产业株式会社
CPC classification number: H01L27/14618 , H01L24/94 , H01L27/14636 , H01L27/14683 , H01L2224/73204
Abstract: 本发明在半导体元件(6)的电极部(3)上形成突起部(4),是与该突起部(4)抵接的结构,用粘接剂(8)将光学构件(7)固定于半导体元件(6)上。
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