公开(公告)号：US20160056086A1

公开(公告)日：2016-02-25

申请号：US14932786

申请日：2015-11-04

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wan-Yu Lee ,  Ying-Hao Kuo ,  Kuo-Chung Yee

IPC: H01L23/31 ,  H01L23/544 ,  H01L23/29

CPC classification number: H01L23/3157 ,  H01L21/02076 ,  H01L21/561 ,  H01L21/568 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/544 ,  H01L24/83 ,  H01L24/96 ,  H01L24/98 ,  H01L2223/54426 ,  H01L2224/83193 ,  H01L2224/832 ,  H01L2224/8349 ,  H01L2224/83896 ,  H01L2924/065 ,  H01L2924/068 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/00

Abstract: A method includes filling a trench formed in a first integrated circuit carrier with temporary bonding material to form a temporary bonding layer. At least one chip is bonded over the temporary bonding layer.

公开(公告)号：US20170170085A1

公开(公告)日：2017-06-15

申请号：US15431296

申请日：2017-02-13

Applicant: Intel Corporation

Inventor： Paul J. Gwin

IPC: H01L23/053 ,  H01L23/10 ,  H01L23/00 ,  H01L23/06 ,  H01L23/08 ,  H01L21/48 ,  H01L21/50

CPC classification number: H01L23/053 ,  G06F1/18 ,  H01L21/4803 ,  H01L21/481 ,  H01L21/4817 ,  H01L21/50 ,  H01L21/565 ,  H01L23/04 ,  H01L23/06 ,  H01L23/08 ,  H01L23/10 ,  H01L23/3142 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L2224/16113 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2924/0133 ,  H01L2924/06 ,  H01L2924/0615 ,  H01L2924/0635 ,  H01L2924/065 ,  H01L2924/068 ,  H01L2924/069 ,  H01L2924/0695 ,  H01L2924/0705 ,  H01L2924/10253 ,  H01L2924/1438 ,  H01L2924/1443 ,  H01L2924/15153 ,  H01L2924/16152 ,  H01L2924/16176 ,  H01L2924/1619 ,  H01L2924/19105 ,  H01L2924/00

Abstract: Embodiments of the present disclosure are directed toward a molded composite enclosure for an integrated circuit (IC) assembly. In one embodiment, an enclosure for an integrated circuit (IC) assembly may include a molded lid structure having a body portion, and a side portion that extends from the body portion and forms a cavity configured to house the IC assembly, wherein the body portion and the side portion share a contiguous interior material comprising a polymer and share a contiguous exterior material comprising a metal, the contiguous interior material having an opening formed in the body portion such that the IC assembly can be thermally coupled with the contiguous exterior material through the opening. Other embodiments may be described and/or claimed.

公开(公告)号：US09607914B2

公开(公告)日：2017-03-28

申请号：US14434239

申请日：2014-05-15

Applicant: Intel Corporation

Inventor： Paul J. Gwin

IPC: H01L23/053 ,  H01L23/04 ,  H01L23/06 ,  G06F1/18 ,  H01L21/48 ,  H01L21/50 ,  H01L21/56 ,  H01L23/08 ,  H01L23/31 ,  H01L23/00

CPC classification number: H01L23/053 ,  G06F1/18 ,  H01L21/4803 ,  H01L21/481 ,  H01L21/4817 ,  H01L21/50 ,  H01L21/565 ,  H01L23/04 ,  H01L23/06 ,  H01L23/08 ,  H01L23/10 ,  H01L23/3142 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L2224/16113 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2924/0133 ,  H01L2924/06 ,  H01L2924/0615 ,  H01L2924/0635 ,  H01L2924/065 ,  H01L2924/068 ,  H01L2924/069 ,  H01L2924/0695 ,  H01L2924/0705 ,  H01L2924/10253 ,  H01L2924/1438 ,  H01L2924/1443 ,  H01L2924/15153 ,  H01L2924/16152 ,  H01L2924/16176 ,  H01L2924/1619 ,  H01L2924/19105 ,  H01L2924/00

Abstract: Embodiments of the present disclosure are directed toward a molded composite enclosure for an integrated circuit (IC) assembly. In one embodiment, an enclosure for an integrated circuit (IC) assembly may include a molded lid structure having a body portion, and a side portion that extends from the body portion and forms a cavity configured to house the IC assembly, wherein the body portion and the side portion share a contiguous interior material comprising a polymer and share a contiguous exterior material comprising a metal, the contiguous interior material having an opening formed in the body portion such that the IC assembly can be thermally coupled with the contiguous exterior material through the opening. Other embodiments may be described and/or claimed.

公开(公告)号：US10056308B2

公开(公告)日：2018-08-21

申请号：US15431296

申请日：2017-02-13

Applicant: Intel Corporation

Inventor： Paul J. Gwin

IPC: H01L23/12 ,  H01L23/053 ,  H01L23/04 ,  H01L23/06 ,  G06F1/18 ,  H01L21/48 ,  H01L21/50 ,  H01L21/56 ,  H01L23/08 ,  H01L23/31 ,  H01L23/00 ,  H01L23/10

CPC classification number: H01L23/053 ,  G06F1/18 ,  H01L21/4803 ,  H01L21/481 ,  H01L21/4817 ,  H01L21/50 ,  H01L21/565 ,  H01L23/04 ,  H01L23/06 ,  H01L23/08 ,  H01L23/10 ,  H01L23/3142 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L2224/16113 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2924/0133 ,  H01L2924/06 ,  H01L2924/0615 ,  H01L2924/0635 ,  H01L2924/065 ,  H01L2924/068 ,  H01L2924/069 ,  H01L2924/0695 ,  H01L2924/0705 ,  H01L2924/10253 ,  H01L2924/1438 ,  H01L2924/1443 ,  H01L2924/15153 ,  H01L2924/16152 ,  H01L2924/16176 ,  H01L2924/1619 ,  H01L2924/19105 ,  H01L2924/00

Abstract: Embodiments of the present disclosure are directed toward a molded composite enclosure for an integrated circuit (IC) assembly. In one embodiment, an enclosure for an integrated circuit (IC) assembly may include a molded lid structure having a body portion, and a side portion that extends from the body portion and forms a cavity configured to house the IC assembly, wherein the body portion and the side portion share a contiguous interior material comprising a polymer and share a contiguous exterior material comprising a metal, the contiguous interior material having an opening formed in the body portion such that the IC assembly can be thermally coupled with the contiguous exterior material through the opening. Other embodiments may be described and/or claimed.

公开(公告)号：US20150155260A1

公开(公告)日：2015-06-04

申请号：US14097054

申请日：2013-12-04

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wan-Yu Lee ,  Ying-Hao Kuo ,  Kuo-Chung Yee

IPC: H01L23/00 ,  H01L21/02 ,  H01L23/544

CPC classification number: H01L23/3157 ,  H01L21/02076 ,  H01L21/561 ,  H01L21/568 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/544 ,  H01L24/83 ,  H01L24/96 ,  H01L24/98 ,  H01L2223/54426 ,  H01L2224/83193 ,  H01L2224/832 ,  H01L2224/8349 ,  H01L2224/83896 ,  H01L2924/065 ,  H01L2924/068 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/00

Abstract: A method includes filling a trench formed in a first integrated circuit carrier with temporary bonding material to form a temporary bonding layer. At least one chip is bonded over the temporary bonding layer.

Abstract translation: 一种方法包括用临时粘合材料填充形成在第一集成电路载体中的沟槽，以形成临时结合层。 至少一个芯片粘合在临时粘合层上。

公开(公告)号：US08709293B2

公开(公告)日：2014-04-29

申请号：US11793175

申请日：2005-12-14

Applicant: Takashi Kitae ,  Seiji Karashima ,  Koichi Hirano ,  Toshiyuki Kojima ,  Seiichi Nakatani ,  Shingo Komatsu ,  Yoshihisa Yamashita

Inventor： Takashi Kitae ,  Seiji Karashima ,  Koichi Hirano ,  Toshiyuki Kojima ,  Seiichi Nakatani ,  Shingo Komatsu ,  Yoshihisa Yamashita

IPC: H01B1/02

CPC classification number: H05K3/323 ,  H01L21/6835 ,  H01L23/49838 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/06131 ,  H01L2224/06135 ,  H01L2224/11001 ,  H01L2224/11003 ,  H01L2224/1141 ,  H01L2224/11502 ,  H01L2224/11522 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/16058 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/165 ,  H01L2224/2741 ,  H01L2224/27436 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29291 ,  H01L2224/293 ,  H01L2224/29311 ,  H01L2224/29313 ,  H01L2224/29316 ,  H01L2224/73204 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/83097 ,  H01L2224/83192 ,  H01L2224/832 ,  H01L2224/83856 ,  H01L2224/83862 ,  H01L2224/8388 ,  H01L2224/83886 ,  H01L2224/83887 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01009 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01061 ,  H01L2924/01065 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/1579 ,  H01L2924/381 ,  H01L2924/3841 ,  H05K3/3436 ,  H05K2201/10674 ,  H05K2201/10977 ,  H05K2203/083 ,  H05K2203/087 ,  Y02P70/613 ,  H01L2924/00011 ,  H01L2924/066 ,  H01L2924/06 ,  H01L2924/0695 ,  H01L2924/062 ,  H01L2924/0615 ,  H01L2924/068 ,  H01L2924/0705 ,  H01L2924/0675 ,  H01L2924/07001 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/01083 ,  H01L2924/00015 ,  H01L2924/00 ,  H01L2924/00014

Abstract: There is provided a flip-chip mounting resin composition which can be used for a flip-chip mounting process that is high in productivity and reliability and thus can be applicable to a flip-chip mounting of a next-generation LSI. This flip-chip mounting resin composition comprises a resin, metal particles and a convection additive 12 that boils upon heating the resin 13. Upon the heating of the resin 13, the metal particles melt and the boiling convection additive 12 convects within the resin 13. This flip-chip mounting resin composition is supplied between a circuit substrate 10 and a semiconductor chip 20, and subsequently the resin 13 is heated so that the molten metal particles self-assemble into the region between each electrode of the circuit substrate and each electrode of the semiconductor chip. As a result, an electrical connection is formed between each electrode of the circuit substrate and each electrode of the semiconductor chip. Finally, the resin 13 is allowed to cure so that the semiconductor chip 20 is secured to the circuit substrate 10, which leads to in a formation of a flip chip assembly.

Abstract translation: 提供了一种倒装芯片安装树脂组合物，其可用于生产率和可靠性高的倒装芯片安装工艺，因此可以应用于下一代LSI的倒装芯片安装。 这种倒装芯片安装树脂组合物包括树脂，金属颗粒和在加热树脂13时沸腾的对流添加剂12.当加热树脂13时，金属颗粒熔化，沸腾对流添加剂12在树脂13内对流。 将该倒装芯片安装树脂组合物供给在电路基板10和半导体芯片20之间，随后加热树脂13，使得熔融金属颗粒自组装成电路基板的每个电极和电极的每个电极之间的区域 半导体芯片。 结果，在电路基板的每个电极和半导体芯片的每个电极之间形成电连接。 最后，使树脂13固化，使得半导体芯片20固定到电路基板10，这导致形成倒装芯片组件。

公开(公告)号：US20120141786A1

公开(公告)日：2012-06-07

申请号：US13272550

申请日：2011-10-13

Applicant: Dong Seon UH ,  Gyu Seok SONG ,  Min Kyu HWANG ,  Ki Tae SONG ,  Dae Ho SEO

Inventor： Dong Seon UH ,  Gyu Seok SONG ,  Min Kyu HWANG ,  Ki Tae SONG ,  Dae Ho SEO

IPC: B32B27/38 ,  C08G69/00 ,  C08G18/00 ,  B32B7/12 ,  C08F210/00

CPC classification number: B32B7/06 ,  B32B27/08 ,  B32B2255/10 ,  B32B2255/26 ,  B32B2255/28 ,  B32B2307/30 ,  B32B2405/00 ,  C08G18/6254 ,  C08G59/08 ,  C08G2170/40 ,  C08L2312/08 ,  C09J7/22 ,  C09J7/385 ,  C09J163/00 ,  C09J175/04 ,  C09J2201/606 ,  C09J2203/326 ,  C09J2433/00 ,  C09J2463/00 ,  H01L21/6836 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68377 ,  H01L2224/29084 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29388 ,  H01L2224/32145 ,  H01L2224/83191 ,  H01L2224/94 ,  H01L2924/00013 ,  H01L2924/061 ,  H01L2924/0615 ,  H01L2924/0635 ,  H01L2924/0665 ,  H01L2924/0675 ,  H01L2924/068 ,  H01L2924/07025 ,  H01L2924/0705 ,  Y10T428/28 ,  Y10T428/31515 ,  H01L2224/27 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/3512 ,  H01L2924/00

Abstract: An adhesive film for semiconductor devices, the adhesive film including a base film having a coefficient of linear expansion of about 50 to about 150 μm/m·° C. at 0 to 5° C.

Abstract translation: 一种用于半导体器件的粘合膜，该粘合膜包括在0至5℃下具有约50至约150μm/ m·℃的线性膨胀系数的基膜。

公开(公告)号：US20160268178A1

公开(公告)日：2016-09-15

申请号：US14434239

申请日：2014-05-14

Applicant: Paul J. Gwin

Inventor： Paul J. Gwin

IPC: H01L23/053 ,  H01L23/06 ,  H01L21/56 ,  H01L23/31 ,  H01L21/50 ,  G06F1/18 ,  H01L23/00 ,  H01L23/08 ,  H01L21/48

CPC classification number: H01L23/053 ,  G06F1/18 ,  H01L21/4803 ,  H01L21/481 ,  H01L21/4817 ,  H01L21/50 ,  H01L21/565 ,  H01L23/04 ,  H01L23/06 ,  H01L23/08 ,  H01L23/10 ,  H01L23/3142 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L2224/16113 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2924/0133 ,  H01L2924/06 ,  H01L2924/0615 ,  H01L2924/0635 ,  H01L2924/065 ,  H01L2924/068 ,  H01L2924/069 ,  H01L2924/0695 ,  H01L2924/0705 ,  H01L2924/10253 ,  H01L2924/1438 ,  H01L2924/1443 ,  H01L2924/15153 ,  H01L2924/16152 ,  H01L2924/16176 ,  H01L2924/1619 ,  H01L2924/19105 ,  H01L2924/00

Abstract: Embodiments of the present disclosure are directed toward a molded composite enclosure for an integrated circuit (IC) assembly. In one embodiment, an enclosure for an integrated circuit (IC) assembly may include a molded lid structure having a body portion, and a side portion that extends from the body portion and forms a cavity configured to house the IC assembly, wherein the body portion and the side portion share a contiguous interior material comprising a polymer and share a contiguous exterior material comprising a metal, the contiguous interior material having an opening formed in the body portion such that the IC assembly can be thermally coupled with the contiguous exterior material through the opening. Other embodiments may be described and/or claimed.

Abstract translation: 本公开的实施例涉及用于集成电路（IC）组件的模制复合外壳。 在一个实施例中，用于集成电路（IC）组件的外壳可以包括具有主体部分的模制盖结构和从主体部分延伸并形成用于容纳IC组件的空腔的侧部，其中主体部分 并且所述侧部共享包含聚合物的连续内部材料并且共享包含金属的连续的外部材料，所述连续内部材料具有形成在所述主体部分中的开口，使得所述IC组件可以通过所述连接的外部材料与所述连接的外部材料热耦合 开放 可以描述和/或要求保护其他实施例。

公开(公告)号：US20160075920A1

公开(公告)日：2016-03-17

申请号：US14950366

申请日：2015-11-24

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Dong Seon UH ,  Gyu Seok SONG ,  Min Kyu HWANG ,  Ki Tae SONG ,  Dae Ho SEO

IPC: C09J7/02 ,  H01L23/00 ,  H01L21/683 ,  B32B7/06 ,  B32B27/08

CPC classification number: B32B7/06 ,  B32B27/08 ,  B32B2255/10 ,  B32B2255/26 ,  B32B2255/28 ,  B32B2307/30 ,  B32B2405/00 ,  C08G18/6254 ,  C08G59/08 ,  C08G2170/40 ,  C08L2312/08 ,  C09J7/22 ,  C09J7/385 ,  C09J163/00 ,  C09J175/04 ,  C09J2201/606 ,  C09J2203/326 ,  C09J2433/00 ,  C09J2463/00 ,  H01L21/6836 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68377 ,  H01L2224/29084 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29388 ,  H01L2224/32145 ,  H01L2224/83191 ,  H01L2224/94 ,  H01L2924/00013 ,  H01L2924/061 ,  H01L2924/0615 ,  H01L2924/0635 ,  H01L2924/0665 ,  H01L2924/0675 ,  H01L2924/068 ,  H01L2924/07025 ,  H01L2924/0705 ,  Y10T428/28 ,  Y10T428/31515 ,  H01L2224/27 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/3512 ,  H01L2924/00

Abstract: An adhesive film for semiconductor devices, the adhesive film including a base film having a coefficient of linear expansion of about 50 to about 150 μm/m•° C. at 0 to 5° C.

Abstract translation: 一种用于半导体器件的粘合剂膜，所述粘合剂膜包括在0至5℃下具有约50至约150μm/ m·℃的线性膨胀系数的基膜。

公开(公告)号：US09202799B2

公开(公告)日：2015-12-01

申请号：US14097054

申请日：2013-12-04

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wan-Yu Lee ,  Ying-Hao Kuo ,  Kuo-Chung Yee

IPC: H01L21/30 ,  H01L23/00 ,  H01L21/02 ,  H01L23/31 ,  H01L21/56

CPC classification number: H01L23/3157 ,  H01L21/02076 ,  H01L21/561 ,  H01L21/568 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/544 ,  H01L24/83 ,  H01L24/96 ,  H01L24/98 ,  H01L2223/54426 ,  H01L2224/83193 ,  H01L2224/832 ,  H01L2224/8349 ,  H01L2224/83896 ,  H01L2924/065 ,  H01L2924/068 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/00

Abstract: A method includes filling a trench formed in a first integrated circuit carrier with temporary bonding material to form a temporary bonding layer. At least one chip is bonded over the temporary bonding layer.

Abstract translation: 一种方法包括用临时粘合材料填充形成在第一集成电路载体中的沟槽，以形成临时结合层。 至少一个芯片粘合在临时粘合层上。