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公开(公告)号：US20160064325A1
公开(公告)日：2016-03-03
申请号：US14939873
申请日：2015-11-12
发明人： Ali SALIH , Chun-Li LIU , Gordon M. GRIVNA
IPC分类号： H01L23/522 , H01L23/532 , H01L29/778
CPC分类号： H01L23/5226 , H01L21/6836 , H01L21/76898 , H01L21/78 , H01L23/4824 , H01L23/49827 , H01L23/53228 , H01L23/53242 , H01L23/5329 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/37 , H01L24/40 , H01L24/48 , H01L24/84 , H01L29/2003 , H01L29/66462 , H01L29/778 , H01L29/7787 , H01L2221/68327 , H01L2224/0345 , H01L2224/0346 , H01L2224/0347 , H01L2224/04034 , H01L2224/05111 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05639 , H01L2224/05647 , H01L2224/06181 , H01L2224/37012 , H01L2224/37013 , H01L2224/37124 , H01L2224/37147 , H01L2224/3716 , H01L2224/37187 , H01L2224/3719 , H01L2224/37639 , H01L2224/37644 , H01L2224/37647 , H01L2224/37655 , H01L2224/37664 , H01L2224/40499 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/84815 , H01L2224/8485 , H01L2924/00014 , H01L2924/12032 , H01L2924/12042 , H01L2924/1305 , H01L2924/13063 , H01L2924/13064 , H01L2924/13091 , H01L2924/00 , H01L2924/01028 , H01L2924/014 , H01L2924/0105 , H01L2924/01047 , H01L2924/01082 , H01L2924/00012 , H01L2924/01029 , H01L2924/07811 , H01L2224/45099
摘要： In one embodiment, a method of forming a HEMT device may include plating a conductor or a plurality of conductors onto an insulator that overlies a plurality of current carrying electrodes of the HEMT device. The method may also include attaching a connector onto the conductor or attaching a plurality of connectors onto the plurality of conductors.
摘要翻译： 在一个实施例中，形成HEMT器件的方法可以包括将导体或多个导体电镀到覆盖在HEMT器件的多个载流电极上的绝缘体上。 该方法还可以包括将连接器附接到导体上或者将多个连接器附接到多个导体上。
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公开(公告)号：US20180158757A1
公开(公告)日：2018-06-07
申请号：US15578867
申请日：2016-05-23
IPC分类号： H01L23/49 , H01L23/50 , H01L23/495 , H01L23/498 , H01L23/00 , C25D3/38 , C25D5/18 , C25D21/14 , H05K3/42
CPC分类号： H01L23/49 , C25D3/38 , C25D5/18 , C25D21/14 , H01L23/3733 , H01L23/3735 , H01L23/4922 , H01L23/49513 , H01L23/49537 , H01L23/49562 , H01L23/49568 , H01L23/49811 , H01L23/50 , H01L24/05 , H01L24/24 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/75 , H01L24/77 , H01L24/82 , H01L24/83 , H01L24/84 , H01L24/92 , H01L24/97 , H01L2224/04026 , H01L2224/04034 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/24105 , H01L2224/24227 , H01L2224/24245 , H01L2224/29111 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/3207 , H01L2224/32227 , H01L2224/32245 , H01L2224/33181 , H01L2224/37005 , H01L2224/37111 , H01L2224/37124 , H01L2224/37139 , H01L2224/37144 , H01L2224/37147 , H01L2224/37155 , H01L2224/37166 , H01L2224/3719 , H01L2224/37211 , H01L2224/37224 , H01L2224/37239 , H01L2224/37244 , H01L2224/37247 , H01L2224/37255 , H01L2224/37266 , H01L2224/3729 , H01L2224/373 , H01L2224/37395 , H01L2224/376 , H01L2224/4007 , H01L2224/40227 , H01L2224/40499 , H01L2224/756 , H01L2224/75703 , H01L2224/776 , H01L2224/77703 , H01L2224/821 , H01L2224/82101 , H01L2224/83007 , H01L2224/831 , H01L2224/834 , H01L2224/83411 , H01L2224/83424 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/83455 , H01L2224/83466 , H01L2224/8349 , H01L2224/83511 , H01L2224/83524 , H01L2224/83539 , H01L2224/83544 , H01L2224/83547 , H01L2224/83555 , H01L2224/83566 , H01L2224/8359 , H01L2224/836 , H01L2224/83695 , H01L2224/8385 , H01L2224/83907 , H01L2224/84007 , H01L2224/841 , H01L2224/8485 , H01L2224/8492 , H01L2224/84951 , H01L2224/9201 , H01L2224/9205 , H01L2224/9221 , H01L2224/97 , H01L2924/13055 , H01L2924/181 , H05K3/424 , H01L2924/00012 , H05K3/4661 , H01L2924/00014 , H01L2924/01029 , H01L2924/01028 , H01L2924/01047 , H01L2924/01079 , H01L2924/0105 , H01L2224/83 , H01L2224/84 , H01L2224/82 , H01L2924/01014
摘要： The invention relates to a method for electrically contacting a component (10) (for example a power component and/or a (semiconductor) component having at least one transistor, preferably an IGBT (insulated-gate bipolar transistor)) having at least one contact (40, 50), at least one open-pored contact piece (60, 70) is galvanically (electrochemically or free of external current) connected to at least one contact (40, 50). In this way, a component module is achieved. The contact (40, 50) is preferably a flat part or has a contact surface, the largest planar extent thereof being greater than an extension of the contact (40, 50) perpendicular to said contact surface. The temperature of the galvanic connection is at most 100° C., preferably at most 60° C., advantageously at most 20° C. and ideally at most 5° C. and/or deviates from the operating temperature of the component by at most 50° C., preferably by at most 20° C., in particular by at most 10° C. and ideally by at most 5° C., preferably by at most 2° C. The component (10) can be contacted by means of the contact piece (60, 70) with a further component, a current conductor and/or a substrate (90). Preferably, a component (10) having two contacts (40, 50) on opposite sides of the component (10) is used, wherein at least one open-pored contact piece (60, 70) is galvanically connected to each contact (40, 50).
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公开(公告)号：US09460995B2
公开(公告)日：2016-10-04
申请号：US14939873
申请日：2015-11-12
发明人： Ali Salih , Chun-Li Liu , Gordon M. Grivna
IPC分类号： H01L29/49 , H01L23/522 , H01L29/66 , H01L29/778 , H01L21/768 , H01L23/498 , H01L21/78 , H01L23/482 , H01L23/532 , H01L29/20 , H01L21/683 , H01L23/00
CPC分类号： H01L23/5226 , H01L21/6836 , H01L21/76898 , H01L21/78 , H01L23/4824 , H01L23/49827 , H01L23/53228 , H01L23/53242 , H01L23/5329 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/37 , H01L24/40 , H01L24/48 , H01L24/84 , H01L29/2003 , H01L29/66462 , H01L29/778 , H01L29/7787 , H01L2221/68327 , H01L2224/0345 , H01L2224/0346 , H01L2224/0347 , H01L2224/04034 , H01L2224/05111 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05639 , H01L2224/05647 , H01L2224/06181 , H01L2224/37012 , H01L2224/37013 , H01L2224/37124 , H01L2224/37147 , H01L2224/3716 , H01L2224/37187 , H01L2224/3719 , H01L2224/37639 , H01L2224/37644 , H01L2224/37647 , H01L2224/37655 , H01L2224/37664 , H01L2224/40499 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/84815 , H01L2224/8485 , H01L2924/00014 , H01L2924/12032 , H01L2924/12042 , H01L2924/1305 , H01L2924/13063 , H01L2924/13064 , H01L2924/13091 , H01L2924/00 , H01L2924/01028 , H01L2924/014 , H01L2924/0105 , H01L2924/01047 , H01L2924/01082 , H01L2924/00012 , H01L2924/01029 , H01L2924/07811 , H01L2224/45099
摘要： In one embodiment, a method of forming a HEMT device may include plating a conductor or a plurality of conductors onto an insulator that overlies a plurality of current carrying electrodes of the HEMT device. The method may also include attaching a connector onto the conductor or attaching a plurality of connectors onto the plurality of conductors.
摘要翻译： 在一个实施例中，形成HEMT器件的方法可以包括将导体或多个导体电镀到覆盖在HEMT器件的多个载流电极上的绝缘体上。 该方法还可以包括将连接器附接到导体上或者将多个连接器附接到多个导体上。
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公开(公告)号：US20150214189A1
公开(公告)日：2015-07-30
申请号：US14165720
申请日：2014-01-28
发明人： Tian San Tan , Theng Chao Long
CPC分类号： H01L25/0655 , H01L21/56 , H01L23/3107 , H01L23/3121 , H01L23/4334 , H01L23/49513 , H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/38 , H01L24/40 , H01L24/48 , H01L24/70 , H01L24/73 , H01L24/83 , H01L24/84 , H01L24/89 , H01L24/97 , H01L25/072 , H01L25/50 , H01L2224/04026 , H01L2224/05554 , H01L2224/05609 , H01L2224/05611 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05669 , H01L2224/29111 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/2929 , H01L2224/29294 , H01L2224/293 , H01L2224/32227 , H01L2224/32245 , H01L2224/33181 , H01L2224/37011 , H01L2224/37013 , H01L2224/37026 , H01L2224/3719 , H01L2224/40227 , H01L2224/40245 , H01L2224/40499 , H01L2224/48227 , H01L2224/48245 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83143 , H01L2224/83447 , H01L2224/83801 , H01L2224/83815 , H01L2224/83825 , H01L2224/8384 , H01L2224/83855 , H01L2224/84143 , H01L2224/84447 , H01L2224/84801 , H01L2224/84815 , H01L2224/84825 , H01L2224/8484 , H01L2224/8485 , H01L2224/84855 , H01L2224/97 , H01L2924/00014 , H01L2924/13055 , H01L2924/13091 , H01L2924/1425 , H01L2924/14252 , H01L2924/14253 , H01L2924/181 , H01R4/00 , H01L2924/00 , H01L2924/0105 , H01L2924/01049 , H01L2924/01014 , H01L2924/014 , H01L2924/00012 , H01L2224/45099 , H01L2224/83 , H01L2224/84
摘要： A semiconductor device includes a device carrier, a first semiconductor chip mounted on the device carrier and a second semiconductor chip mounted on the device carrier. Further, the semiconductor device includes a first contact clip bonded to a first electrode of the first semiconductor chip, a second contact clip bonded to a first electrode of the second semiconductor chip and an insulating connector configured to hold the first contact clip and the second contact clip together.
摘要翻译： 半导体器件包括器件载体，安装在器件载体上的第一半导体芯片和安装在器件载体上的第二半导体芯片。 此外，半导体器件包括接合到第一半导体芯片的第一电极的第一接触夹，与第二半导体芯片的第一电极接合的第二接触夹和被配置为保持第一接触夹和第二接触的绝缘连接器 夹在一起
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公开(公告)号：US09837380B2
公开(公告)日：2017-12-05
申请号：US14165720
申请日：2014-01-28
发明人： Tian San Tan , Theng Chao Long
IPC分类号： H01L23/00 , H01L25/065 , H01L21/56 , H01L23/31 , H01L25/00 , H01R4/00 , H01L25/07 , H01L23/433 , H01L23/495
CPC分类号： H01L25/0655 , H01L21/56 , H01L23/3107 , H01L23/3121 , H01L23/4334 , H01L23/49513 , H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/38 , H01L24/40 , H01L24/48 , H01L24/70 , H01L24/73 , H01L24/83 , H01L24/84 , H01L24/89 , H01L24/97 , H01L25/072 , H01L25/50 , H01L2224/04026 , H01L2224/05554 , H01L2224/05609 , H01L2224/05611 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05669 , H01L2224/29111 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/2929 , H01L2224/29294 , H01L2224/293 , H01L2224/32227 , H01L2224/32245 , H01L2224/33181 , H01L2224/37011 , H01L2224/37013 , H01L2224/37026 , H01L2224/3719 , H01L2224/40227 , H01L2224/40245 , H01L2224/40499 , H01L2224/48227 , H01L2224/48245 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83143 , H01L2224/83447 , H01L2224/83801 , H01L2224/83815 , H01L2224/83825 , H01L2224/8384 , H01L2224/83855 , H01L2224/84143 , H01L2224/84447 , H01L2224/84801 , H01L2224/84815 , H01L2224/84825 , H01L2224/8484 , H01L2224/8485 , H01L2224/84855 , H01L2224/97 , H01L2924/00014 , H01L2924/13055 , H01L2924/13091 , H01L2924/1425 , H01L2924/14252 , H01L2924/14253 , H01L2924/181 , H01R4/00 , H01L2924/00 , H01L2924/0105 , H01L2924/01049 , H01L2924/01014 , H01L2924/014 , H01L2924/00012 , H01L2224/45099 , H01L2224/83 , H01L2224/84
摘要： A semiconductor device includes a device carrier, a first semiconductor chip mounted on the device carrier and a second semiconductor chip mounted on the device carrier. Further, the semiconductor device includes a first contact clip bonded to a first electrode of the first semiconductor chip, a second contact clip bonded to a first electrode of the second semiconductor chip and an insulating connector configured to hold the first contact clip and the second contact clip together.
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公开(公告)号：US09214423B2
公开(公告)日：2015-12-15
申请号：US14174500
申请日：2014-02-06
发明人： Ali Salih , Chun-Li Liu , Gordon M. Grivna
IPC分类号： H01L29/49 , H01L23/498 , H01L29/66 , H01L29/778 , H01L21/768 , H01L21/78 , H01L23/482 , H01L29/20 , H01L21/683 , H01L23/00
CPC分类号： H01L23/5226 , H01L21/6836 , H01L21/76898 , H01L21/78 , H01L23/4824 , H01L23/49827 , H01L23/53228 , H01L23/53242 , H01L23/5329 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/37 , H01L24/40 , H01L24/48 , H01L24/84 , H01L29/2003 , H01L29/66462 , H01L29/778 , H01L29/7787 , H01L2221/68327 , H01L2224/0345 , H01L2224/0346 , H01L2224/0347 , H01L2224/04034 , H01L2224/05111 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05639 , H01L2224/05647 , H01L2224/06181 , H01L2224/37012 , H01L2224/37013 , H01L2224/37124 , H01L2224/37147 , H01L2224/3716 , H01L2224/37187 , H01L2224/3719 , H01L2224/37639 , H01L2224/37644 , H01L2224/37647 , H01L2224/37655 , H01L2224/37664 , H01L2224/40499 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/84815 , H01L2224/8485 , H01L2924/00014 , H01L2924/12032 , H01L2924/12042 , H01L2924/1305 , H01L2924/13063 , H01L2924/13064 , H01L2924/13091 , H01L2924/00 , H01L2924/01028 , H01L2924/014 , H01L2924/0105 , H01L2924/01047 , H01L2924/01082 , H01L2924/00012 , H01L2924/01029 , H01L2924/07811 , H01L2224/45099
摘要： In one embodiment, a method of forming a HEMT device may include plating a conductor or a plurality of conductors onto an insulator that overlies a plurality of current carrying electrodes of the HEMT device. The method may also include attaching a connector onto the conductor or attaching a plurality of connectors onto the plurality of conductors.
摘要翻译： 在一个实施例中，形成HEMT器件的方法可以包括将导体或多个导体电镀到覆盖在HEMT器件的多个载流电极上的绝缘体上。 该方法还可以包括将连接器附接到导体上或者将多个连接器附接到多个导体上。
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公开(公告)号：US20140264452A1
公开(公告)日：2014-09-18
申请号：US14174500
申请日：2014-02-06
发明人： Ali Salih , Chun-Li Liu , Gordon M. Grivna
IPC分类号： H01L23/498 , H01L21/768
CPC分类号： H01L23/5226 , H01L21/6836 , H01L21/76898 , H01L21/78 , H01L23/4824 , H01L23/49827 , H01L23/53228 , H01L23/53242 , H01L23/5329 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/37 , H01L24/40 , H01L24/48 , H01L24/84 , H01L29/2003 , H01L29/66462 , H01L29/778 , H01L29/7787 , H01L2221/68327 , H01L2224/0345 , H01L2224/0346 , H01L2224/0347 , H01L2224/04034 , H01L2224/05111 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05639 , H01L2224/05647 , H01L2224/06181 , H01L2224/37012 , H01L2224/37013 , H01L2224/37124 , H01L2224/37147 , H01L2224/3716 , H01L2224/37187 , H01L2224/3719 , H01L2224/37639 , H01L2224/37644 , H01L2224/37647 , H01L2224/37655 , H01L2224/37664 , H01L2224/40499 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/84815 , H01L2224/8485 , H01L2924/00014 , H01L2924/12032 , H01L2924/12042 , H01L2924/1305 , H01L2924/13063 , H01L2924/13064 , H01L2924/13091 , H01L2924/00 , H01L2924/01028 , H01L2924/014 , H01L2924/0105 , H01L2924/01047 , H01L2924/01082 , H01L2924/00012 , H01L2924/01029 , H01L2924/07811 , H01L2224/45099
摘要： In one embodiment, a method of forming a HEMT device may include plating a conductor or a plurality of conductors onto an insulator that overlies a plurality of current carrying electrodes of the HEMT device. The method may also include attaching a connector onto the conductor or attaching a plurality of connectors onto the plurality of conductors.
摘要翻译： 在一个实施例中，形成HEMT器件的方法可以包括将导体或多个导体电镀到覆盖在HEMT器件的多个载流电极上的绝缘体上。 该方法还可以包括将连接器附接到导体上或者将多个连接器附接到多个导体上。
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