Invention Application
US20160064325A1 SEMICONDUCTOR DEVICE AND STRUCTURE THEREFOR 有权
半导体器件及其结构

SEMICONDUCTOR DEVICE AND STRUCTURE THEREFOR
Abstract:
In one embodiment, a method of forming a HEMT device may include plating a conductor or a plurality of conductors onto an insulator that overlies a plurality of current carrying electrodes of the HEMT device. The method may also include attaching a connector onto the conductor or attaching a plurality of connectors onto the plurality of conductors.
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