Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND STRUCTURE THEREFOR
- Patent Title (中): 半导体器件及其结构
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Application No.: US14939873Application Date: 2015-11-12
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Publication No.: US20160064325A1Publication Date: 2016-03-03
- Inventor: Ali SALIH , Chun-Li LIU , Gordon M. GRIVNA
- Applicant: Semiconductor Components Industries, LLC
- Applicant Address: US AZ PHOENIX
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ PHOENIX
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/532 ; H01L29/778

Abstract:
In one embodiment, a method of forming a HEMT device may include plating a conductor or a plurality of conductors onto an insulator that overlies a plurality of current carrying electrodes of the HEMT device. The method may also include attaching a connector onto the conductor or attaching a plurality of connectors onto the plurality of conductors.
Public/Granted literature
- US09460995B2 Semiconductor device and structure therefor Public/Granted day:2016-10-04
Information query
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