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公开(公告)号:US12133472B2
公开(公告)日:2024-10-29
申请号:US17463522
申请日:2021-08-31
申请人: KIOXIA CORPORATION
发明人: Katsuhiko Koui , Masaru Toko , Soichi Oikawa , Hideyuki Sugiyama
CPC分类号: H10N50/80 , H01F10/3259 , H01F10/3272 , H01F10/3286 , H10B61/00 , H10N50/10 , H10N50/85
摘要: A magnetic storage device includes a magnetoresistance effect element including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a non-magnetic layer between the first and second magnetic layers. The first magnetic layer includes a first layer that is magnetic, a second layer that is magnetic and farther from the non-magnetic layer than the first layer, and a third layer between the first and second layers. The third layer includes a first portion formed of an insulating material or a semiconductor material and a plurality of second portions surrounded by the first portion and formed of a conductive material.
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公开(公告)号:US12131637B2
公开(公告)日:2024-10-29
申请号:US17705766
申请日:2022-03-28
申请人: KIOXIA CORPORATION
发明人: Marie Takada , Masanobu Shirakawa
CPC分类号: G08G1/0967 , G06T7/70 , G06V20/58 , G08G1/0112 , G08G1/0141 , G08G1/04 , G08G1/096716 , G08G1/096741 , G08G1/096775 , G08G1/137 , G06T2207/30261
摘要: A driving support system includes a first monitoring device on a first object, the first monitoring device having a first controller, a first camera, and a first display, a second monitoring device on a second object, the second monitoring device having a second controller and a second camera, and a server in communication with the first and second monitoring devices. The first and second controllers each detect a target in images acquired from the respective first or second camera, calculate target information for the target, and transmit the target information to the server. The server generates list information including the target information the first and second monitoring devices, and transmits the list information to the first and second monitoring devices. The first controller further generates a map according to the list information received from the server, and displays the map on the first display.
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公开(公告)号:US20240355743A1
公开(公告)日:2024-10-24
申请号:US18760442
申请日:2024-07-01
申请人: Kioxia Corporation
发明人: Yasuhito YOSHIMIZU
IPC分类号: H01L23/535 , H01L21/768 , H01L23/00 , H01L23/522 , H01L25/065 , H01L25/18 , H10B43/27
CPC分类号: H01L23/535 , H01L21/76805 , H01L21/76895 , H01L23/5226 , H01L24/08 , H01L25/0657 , H01L25/18 , H10B43/27 , H01L2224/08145 , H01L2924/1431 , H01L2924/14511
摘要: A semiconductor storage device includes a semiconductor substrate and a conductive layer separated from the semiconductor substrate in a first direction. The conductive layer extends in a second direction parallel to the semiconductor substrate. A semiconductor layer extends in the first direction through the conductive layer. A first contact extends in the first direction and is connected to a surface of the conductive layer facing away from the semiconductor substrate. A first insulating layer extends in the first direction, and a second insulating layer extends along the first insulating layer in the first direction. Each of the first and second insulating layers entirely overlaps with the first contact when viewed in the first direction.
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公开(公告)号:US12125878B2
公开(公告)日:2024-10-22
申请号:US17350492
申请日:2021-06-17
申请人: Kioxia Corporation
IPC分类号: H01L29/08 , H01L27/12 , H01L29/40 , H01L29/417 , H01L29/66 , H01L29/78 , H01L29/167 , H01L29/45
CPC分类号: H01L29/0847 , H01L27/1207 , H01L29/401 , H01L29/41766 , H01L29/66636 , H01L29/7848 , H01L29/167 , H01L29/456
摘要: A semiconductor device in an embodiment includes a substrate and a transistor. The transistor includes a source layer, a drain layer, a gate insulation film, a gate electrode, a contact plug and a first epitaxial layer. The source layer and the drain layer are provided in surface regions of the substrate, and contain an impurity. The gate insulation film is provided on the substrate between the source layer and the drain layer. The gate electrode is provided on the gate insulation film. The contact plug is provided so as to protrude to the source layer or the drain layer downward of a surface of the substrate. The first epitaxial layer is provided between the contact plug and the source layer or drain layer, and contains both the impurity and carbon.
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公开(公告)号:US12125542B2
公开(公告)日:2024-10-22
申请号:US17695529
申请日:2022-03-15
申请人: KIOXIA CORPORATION
发明人: Wataru Moriyama , Hayato Konno , Takao Nakajima , Fumihiro Kono , Masaki Fujiu , Kiyoaki Iwasa , Tadashi Someya
IPC分类号: G11C16/04 , G11C16/16 , H01L23/528 , H01L23/535 , H10B41/27 , H10B43/27
CPC分类号: G11C16/16 , G11C16/0483 , H01L23/528 , H01L23/535 , H10B41/27 , H10B43/27
摘要: A semiconductor memory device includes a plurality of word lines, a first select gate line, a second select gate line, a first semiconductor layer, a third select gate line, a fourth select gate line, a second semiconductor layer, and a word line contact electrode. The first select gate line and the third select gate line are farther from the substrate than the plurality of word lines. The second select gate line and the fourth select gate line are closer to the substrate than the plurality of word lines. The first semiconductor layer is opposed to the plurality of word lines, the first select gate line, and the second select gate line. The second semiconductor layer is opposed to the plurality of word lines, the third select gate line, and the fourth select gate line. The word line contact electrode is connected to one of the plurality of word lines.
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公开(公告)号:US20240347087A1
公开(公告)日:2024-10-17
申请号:US18754823
申请日:2024-06-26
申请人: KIOXIA CORPORATION
发明人: Zhao LU , Yuji NAGAI , Akio SUGAHARA , Takehisa KUROSAWA , Masaru KOYANAGI
CPC分类号: G11C7/222 , G11C7/08 , G11C7/1063 , G11C7/109
摘要: A semiconductor memory device includes: first pad transmitting and receiving first timing signal; second pad transmitting and receiving data signal in response to the first timing signal; third pad receiving second timing signal; fourth pad receiving control information in response to the second timing signal; memory cell array; sense amplifier connected to the memory cell array; first register connected to the sense amplifier; second register storing first control information; third register storing second control information; and control circuit executing data-out operation. The first control information is stored in the second register based on an input to the fourth pad in response to the second timing signal consisting of i cycles, and the second control information is stored in the third register based on an input to the fourth pad in response to the second timing signal consisting of j cycles.
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公开(公告)号:US20240345734A1
公开(公告)日:2024-10-17
申请号:US18631430
申请日:2024-04-10
申请人: Kioxia Corporation
发明人: Kazuhiro HIWADA
IPC分类号: G06F3/06
CPC分类号: G06F3/0611 , G06F3/0656 , G06F3/0659 , G06F3/0679
摘要: According to one embodiment, a memory system includes a plurality of memory chips each including a first memory area and a second memory area and a memory controller. The memory controller is configured to control a first group including a plurality of first memory areas and a second group including a plurality of second memory areas independently of each other, form a data group including a plurality of write data items of respective pages and first data including an erasure correction code corresponding to the write data items, and distribute each of the write data items and the first data of the data group in the plurality of first memory areas of the first group to write the distributed write data items and first data at different timings.
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公开(公告)号:US12119337B2
公开(公告)日:2024-10-15
申请号:US18298104
申请日:2023-04-10
申请人: Kioxia Corporation
发明人: Junichi Shibata
CPC分类号: H01L25/18 , H01L24/05 , H01L24/08 , H01L24/32 , H01L24/83 , H01L24/94 , H01L25/50 , H01L2224/05647 , H01L2224/08145 , H01L2224/32054 , H01L2224/32059 , H01L2224/32145 , H01L2224/80203 , H01L2224/83139 , H01L2224/83203
摘要: A semiconductor device has a first substrate including an element region, a peripheral region that surrounds the element region, a first insulator with a first recess portion in the peripheral region, a first metal layer in the element region, and a first conductor in the peripheral region to surround the element region. A second substrate has an element region, a peripheral region that surrounds the element region, a second insulator with a second recess portion that faces the first recess portion, a second metal layer in contact with the first metal layer, and a second conductor that surrounds the element region of the second substrate.
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公开(公告)号:US12118235B2
公开(公告)日:2024-10-15
申请号:US17402192
申请日:2021-08-13
申请人: Kioxia Corporation
发明人: Paul Hanham , Julien Margetts , Matthew Stephens
IPC分类号: G06F3/06
CPC分类号: G06F3/0656 , G06F3/0604 , G06F3/0631 , G06F3/0659 , G06F3/0679
摘要: Example implementations include a non-transitory processor-readable media comprising processor-readable instructions that when executed by at least one processor of a controller, causes the processor to generate at least one memory address corresponding respectively to at least one command block, the command block being associated with a command to a memory device, allocate the memory address to a buffer addressing unit associated with a host interface, the memory address including a buffer memory identifier associated with a buffer memory block and a buffer memory address associated with the buffer memory block, and update a request count associated with the buffer memory block by incrementing a reference counter associated with the buffer memory block.
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10.
公开(公告)号:US20240339139A1
公开(公告)日:2024-10-10
申请号:US18746238
申请日:2024-06-18
申请人: Kioxia Corporation
发明人: Hiroki DATE
IPC分类号: G11C7/22 , G11C16/08 , G11C16/10 , G11C16/28 , G11C16/32 , H10B41/27 , H10B41/35 , H10B41/40 , H10B43/27 , H10B43/35 , H10B43/40
CPC分类号: G11C7/22 , G11C16/08 , G11C16/10 , G11C16/28 , G11C16/32 , H10B43/27 , H10B43/35 , H10B43/40 , H10B41/27 , H10B41/35 , H10B41/40
摘要: In a semiconductor memory device, in a write operation performed to a memory cell transistor, a first voltage is applied to a first word line and a second voltage lower than the first voltage is applied to a second word line. When a stop command is received during the write operation, a third voltage lower than the second voltage is applied to the first and second word lines, thereafter a fourth voltage higher than the third voltage is applied to a first selection line, thereon or thereafter a fifth voltage higher than the fourth voltage is applied to the first and second word lines, thereafter a sixth voltage lower than the fourth voltage is applied to the first selection line, and thereafter a seventh voltage is applied to the first and second word lines.
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