Semiconductor memory device capable of reducing power consumption in self-refresh operation
    4.
    发明授权
    Semiconductor memory device capable of reducing power consumption in self-refresh operation 有权
    能够降低自刷新操作中的功耗的半导体存储器件

    公开(公告)号:US06349068B2

    公开(公告)日:2002-02-19

    申请号:US09828847

    申请日:2001-04-10

    CPC classification number: G11C11/40622 G11C11/406

    Abstract: A semiconductor memory device, which refreshes memory cells to retain data, has a first refresh mode and a second refresh mode. The first refresh mode is a mode for refreshing all of the memory cells, and the second refresh mode is a mode for refreshing a part of the memory cells. By refreshing only designated areas where data must be retained, power consumption in a refresh operation can be reduced, drastically cutting power consumption in a power-down mode.

    Abstract translation: 刷新存储单元以保留数据的半导体存储器件具有第一刷新模式和第二刷新模式。 第一刷新模式是用于刷新所有存储单元的模式,第二刷新模式是用于刷新存储单元的一部分的模式。 通过仅刷新必须保留数据的指定区域,可以减少刷新操作中的功耗,从而在掉电模式下大幅度地削减功耗。

    Semiconductor memory device capable of reducing power consumption in self-refresh operation
    8.
    发明授权
    Semiconductor memory device capable of reducing power consumption in self-refresh operation 有权
    能够降低自刷新操作中的功耗的半导体存储器件

    公开(公告)号:US06215714B1

    公开(公告)日:2001-04-10

    申请号:US09517279

    申请日:2000-03-02

    CPC classification number: G11C11/40622 G11C11/406

    Abstract: A semiconductor memory device, which refreshes memory cells to retain data, has a first refresh mode and a second refresh mode. The first refresh mode is a mode for refreshing all of the memory cells, and the second refresh mode is a mode for refreshing a part of the memory cells. By refreshing only designated areas where data must be retained, power consumption in a refresh operation can be reduced, drastically cutting power consumption in a power-down mode.

    Abstract translation: 刷新存储单元以保留数据的半导体存储器件具有第一刷新模式和第二刷新模式。 第一刷新模式是用于刷新所有存储单元的模式,第二刷新模式是用于刷新存储单元的一部分的模式。 通过仅刷新必须保留数据的指定区域,可以减少刷新操作中的功耗,从而在掉电模式下大幅度地削减功耗。

    Integrated circuit device
    9.
    发明授权
    Integrated circuit device 有权
    集成电路器件

    公开(公告)号:US06194932B1

    公开(公告)日:2001-02-27

    申请号:US09383015

    申请日:1999-08-25

    CPC classification number: G11C7/222 G06F1/10 G11C7/22 H03L7/0814

    Abstract: The present invention omits a variable delay circuit (10 in FIG. 1) inside a DLL circuit, and instead, creates a timing synchronization circuit, which generates a second reference clock. The timing synchronization circuit shifts the phase of a first reference clock generated by a frequency divider to the timing of a timing signal generated from the other variable delay circuit so that the second reference clock matches to the timing signal. Then, a phase comparator compares the divided first reference clock to a variable clock that delays the second reference clock, and controls the delay time of the variable delay circuit so that both clocks are in phase. As a result, one variable delay circuit can be omitted, and a DLL circuit that uses a divided clock can be configured.

    Abstract translation: 本发明省略了DLL电路内部的可变延迟电路(图1中的10),而是产生产生第二参考时钟的定时同步电路。 定时同步电路将由分频器产生的第一参考时钟的相位移位到从另一个可变延迟电路产生的定时信号的定时,使得第二参考时钟与定​​时信号相匹配。 然后,相位比较器将分频的第一参考时钟与延迟第二参考时钟的可变时钟进行比较,并且控制可变延迟电路的延迟时间,使得两个时钟同相。 结果,可以省略一个可变延迟电路,并且可以配置使用分频时钟的DLL电路。

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