Invention Grant
US06215714B1 Semiconductor memory device capable of reducing power consumption in self-refresh operation 有权
能够降低自刷新操作中的功耗的半导体存储器件

  • Patent Title: Semiconductor memory device capable of reducing power consumption in self-refresh operation
  • Patent Title (中): 能够降低自刷新操作中的功耗的半导体存储器件
  • Application No.: US09517279
    Application Date: 2000-03-02
  • Publication No.: US06215714B1
    Publication Date: 2001-04-10
  • Inventor: Yoshihiro TakemaeYasurou Matsuzaki
  • Applicant: Yoshihiro TakemaeYasurou Matsuzaki
  • Priority: JP11-106813 19990414
  • Main IPC: G11C700
  • IPC: G11C700
Semiconductor memory device capable of reducing power consumption in self-refresh operation
Abstract:
A semiconductor memory device, which refreshes memory cells to retain data, has a first refresh mode and a second refresh mode. The first refresh mode is a mode for refreshing all of the memory cells, and the second refresh mode is a mode for refreshing a part of the memory cells. By refreshing only designated areas where data must be retained, power consumption in a refresh operation can be reduced, drastically cutting power consumption in a power-down mode.
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