公开(公告)号：US09905759B2

公开(公告)日：2018-02-27

申请号：US15013088

申请日：2016-02-02

Applicant: Toshiba Memory Corporation

Inventor： Takeshi Takagi ,  Takeshi Yamaguchi ,  Masaki Yamato ,  Hiroyuki Ode ,  Toshiharu Tanaka

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/1246 ,  H01L27/2427 ,  H01L27/2454 ,  H01L27/2481 ,  H01L27/249 ,  H01L45/08 ,  H01L45/1226 ,  H01L45/146 ,  H01L45/1641 ,  H01L45/1666

Abstract: According to one embodiment, a memory device includes a pillar, a first wiring, a second wiring, an insulating film provided between the first wiring and the second wiring, a first layer provided between the first wiring and the pillar in the second direction and including a first metal oxide containing a first metal and oxygen, a second layer provided between the second wiring and the pillar in the second direction and including the first metal oxide containing the first metal and oxygen, and an intermediate film provided between the pillar and the first layer and between the pillar and the second layer in the second direction and including a second metal oxide containing the first metal and oxygen. Concentration of oxygen contained in the first metal oxide is lower than concentration of oxygen contained in the second metal oxide.

公开(公告)号：US10192928B2

公开(公告)日：2019-01-29

申请号：US15706598

申请日：2017-09-15

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Natsuki Fukuda ,  Mutsumi Okajima ,  Atsushi Oga ,  Toshiharu Tanaka ,  Takeshi Yamaguchi ,  Takeshi Takagi ,  Masanori Komura

IPC: H01L27/24 ,  H01L27/10 ,  H01L21/822 ,  H01L27/115 ,  H01L29/792 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/311 ,  H01L27/06 ,  H01L23/532 ,  H01L23/522 ,  H01L27/11575 ,  H01L27/11573 ,  H01L27/11578 ,  H01L27/11556 ,  H01L27/11582 ,  H01L27/11551 ,  H01L27/1157

Abstract: A semiconductor device according to an embodiment includes: a stacked body including a plurality of first conductive films stacked via an inter-layer insulating film; a first conductive body contacting the stacked body to extend in a stacking direction; and a plurality of first insulating films in the same layers as the first conductive films and disposed between the first conductive body and the first conductive films, the first conductive body including a projecting part that projects along tops of one of the first insulating films and one of the first conductive films, and a side surface of the projecting part contacting an upper surface of the one of the first conductive films.

公开(公告)号：US20180233538A1

公开(公告)日：2018-08-16

申请号：US15693998

申请日：2017-09-01

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Tetsu Morooka ,  Takeshi Takagi ,  Takayuki Tsukamoto

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/249 ,  G11C13/0007 ,  G11C13/0097 ,  G11C2213/32 ,  G11C2213/51 ,  G11C2213/71 ,  H01L27/2454 ,  H01L45/04 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1226 ,  H01L45/1246 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1675

Abstract: A memory device includes a first interconnection extending in a first direction; a second interconnection crossing the first interconnection and extending in a second direction; a resistance change film provided between the first interconnection and the second interconnection, and an intermediate film provided between the second interconnection and the resistance change film. The intermediate film is in contact with the second interconnection, and includes an insulating material.

公开(公告)号：US09812507B2

公开(公告)日：2017-11-07

申请号：US15227493

申请日：2016-08-03

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Masanori Komura ,  Takeshi Takagi

IPC: H01L27/24 ,  H01L45/00 ,  H01L23/528

CPC classification number: H01L27/249 ,  H01L23/528 ,  H01L27/2418 ,  H01L45/04 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/146

Abstract: A semiconductor memory device according to an embodiment comprises: a semiconductor substrate which extends in first and second directions; first wiring lines which are arranged in a third direction, and which extend in the first direction; second wiring lines which are arranged in the first direction and extend in the third direction; and memory cells disposed at intersections of the first wiring lines and the second wiring lines, one of the memory cells including a first film and a second film whose permittivity is different from that of the first film which are stacked in the second direction between one of the first wiring lines and one of the second wiring lines, and the second films of two of the memory cells adjacent in the third direction being separated between the two memory cells.

公开(公告)号：US10074694B2

公开(公告)日：2018-09-11

申请号：US15017899

申请日：2016-02-08

Applicant: Toshiba Memory Corporation

Inventor： Takeshi Takagi ,  Takeshi Yamaguchi ,  Masaki Yamato ,  Hiroyuki Ode ,  Toshiharu Tanaka

IPC: H01L27/24 ,  H01L45/00 ,  G11C13/00

CPC classification number: H01L27/249 ,  G11C13/0007 ,  G11C13/003 ,  G11C13/0033 ,  G11C2213/32 ,  G11C2213/71 ,  G11C2213/76 ,  G11C2213/77 ,  G11C2213/78 ,  G11C2213/79 ,  H01L27/2409 ,  H01L27/2418 ,  H01L27/2454 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/146 ,  H01L45/16

Abstract: According to one embodiment, a memory device includes a first wiring extending in a first direction, a second wiring extending in a second direction crossing the first direction and a resistance change film provided between the first wiring and the second wiring. The second wiring includes a first conductive layer and a first intermediate layer including a first region provided between the first conductive layer and the resistance change film. The first intermediate layer includes a material having nonlinear resistance characteristics.

公开(公告)号：US09768233B1

公开(公告)日：2017-09-19

申请号：US15074338

申请日：2016-03-18

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Natsuki Fukuda ,  Mutsumi Okajima ,  Atsushi Oga ,  Toshiharu Tanaka ,  Takeshi Yamaguchi ,  Takeshi Takagi ,  Masanori Komura

IPC: H01L27/15 ,  H01L23/528 ,  H01L29/792 ,  H01L21/768 ,  H01L27/24 ,  H01L21/3213 ,  H01L21/311 ,  H01L27/11575 ,  H01L27/11573 ,  H01L21/822 ,  H01L27/11578 ,  H01L27/11556 ,  H01L27/11582 ,  H01L27/11551 ,  H01L27/1157

CPC classification number: H01L27/2481 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/76805 ,  H01L21/76816 ,  H01L21/8221 ,  H01L23/5226 ,  H01L23/5329 ,  H01L27/0688 ,  H01L27/101 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575 ,  H01L27/11578 ,  H01L27/11582 ,  H01L27/2454 ,  H01L27/249 ,  H01L29/7926

Abstract: A semiconductor device according to an embodiment includes: a stacked body including a plurality of first conductive films stacked via an inter-layer insulating film; a first conductive body facing the stacked body to extend in a stacking direction; and a plurality of first insulating films in the same layers as the first conductive films and disposed between the first conductive body and the first conductive films, the first conductive body including a projecting part that projects along tops of one of the first insulating films and one of the first conductive films, and a lower surface of the projecting part contacting an upper surface of the one of the first conductive films.