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    Semiconductor storage device
    1.
    发明授权
    Semiconductor storage device 有权

    公开(公告)号：US10910388B2

    公开(公告)日：2021-02-02

    申请号：US16518030

    申请日：2019-07-22

    申请人： Toshiba Memory Corporation

    发明人： Natsuki Fukuda ,  Satoshi Nagashima ,  Tetsu Morooka ,  Noritaka Ishihara

    IPC分类号： H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/06 ,  H01L21/311 ,  H01L21/764 ,  H01L21/28

    摘要： According to one embodiment, a semiconductor storage device includes a first charge storage part, a first insulating part, a second charge storage part, a second insulating part, a first select transistor, and a hollow part. The first charge storage part is at a first position separated from a surface of a substrate by a first distance in a third direction. The first select transistor is at a second position separated from the surface of the substrate by a second distance in the third direction. The second distance is greater than the first distance. The hollow part is up to a third position in the third direction separated from the surface of the substrate by a third distance in the third direction. The third distance is greater than or equal to the first distance and shorter than or equal to the second distance.

    SEMICONDUCTOR MEMORY DEVICE
    2.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE 审中-公开

    公开(公告)号：US20200098767A1

    公开(公告)日：2020-03-26

    申请号：US16295762

    申请日：2019-03-07

    申请人： TOSHIBA MEMORY CORPORATION

    发明人： Tetsu Morooka

    IPC分类号： H01L27/1157 ,  H01L27/11524 ,  G11C16/04

    摘要： According to one embodiment, a semiconductor memory device includes: a substrate; a plurality of wiring layers stacked via a plurality of insulating layers above the substrate, the wiring layers having an opening extending in a direction perpendicular to the substrate, each of the wiring layers including a first face recessed in a first direction, a second face recessed in a second direction, third face recessed in a third direction, and a fourth face recessed in a fourth direction; a block insulating film provided to be in contact with each of the first to fourth faces; a charge storage film provided on a side face of the block insulating film; a tunnel insulating film provided on a side face of the charge storage film; and a semiconductor film provided on a side face of the tunnel insulating film.

    Semiconductor memory device
    3.
    发明授权
    Semiconductor memory device 有权

    公开(公告)号：US10971510B2

    公开(公告)日：2021-04-06

    申请号：US16295762

    申请日：2019-03-07

    申请人： TOSHIBA MEMORY CORPORATION

    发明人： Tetsu Morooka

    IPC分类号： H01L27/1157 ,  H01L27/11524 ,  G11C16/04 ,  H01L27/11551 ,  H01L27/11578

    摘要： According to one embodiment, a semiconductor memory device includes: a substrate; a plurality of wiring layers stacked via a plurality of insulating layers above the substrate, the wiring layers having an opening extending in a direction perpendicular to the substrate, each of the wiring layers including a first face recessed in a first direction, a second face recessed in a second direction, third face recessed in a third direction, and a fourth face recessed in a fourth direction; a block insulating film provided to be in contact with each of the first to fourth faces; a charge storage film provided on a side face of the block insulating film; a tunnel insulating film provided on a side face of the charge storage film; and a semiconductor film provided on a side face of the tunnel insulating film.

    Memory device
    4.
    发明授权
    Memory device 有权

    公开(公告)号：US10790443B2

    公开(公告)日：2020-09-29

    申请号：US15909125

    申请日：2018-03-01

    申请人： TOSHIBA MEMORY CORPORATION

    发明人： Yefei Han ,  Tetsu Morooka

    IPC分类号： H01L45/00 ,  H01L27/24 ,  G11C7/06 ,  G11C13/00 ,  G11C7/12 ,  G11C29/00 ,  G11C29/04

    摘要： A memory device includes a first conductive layer and a second conductive layer. A variable resistance layer is disposed between the first conductive layer and the second conductive layer and includes a first layer containing a semiconductor or a first metal oxide, and a second layer containing a second metal oxide. A phase-change layer is disposed either between the first conductive layer and the variable resistance layer or between the second conductive layer and the variable resistance layer.

    Memory device
    5.
    发明授权
    Memory device 有权

    公开(公告)号：US10283706B2

    公开(公告)日：2019-05-07

    申请号：US15705074

    申请日：2017-09-14

    申请人： TOSHIBA MEMORY CORPORATION

    发明人： Takayuki Ishikawa ,  Sanggyu Koh ,  Tetsu Morooka

    IPC分类号： H01L27/24 ,  H01L45/00

    摘要： A memory device includes first interconnects extending in a first direction; a second interconnect extending in a second direction crossing the first interconnects; an insulating film provided between two first interconnects; and a resistance change film between the first interconnects and the second interconnect. The resistance change film includes a first layer and second layers, the first layer extending in the second direction along the second interconnect, and the second layers being provided selectively between the respective first interconnects and the first layer. The second layers protrude toward the second interconnect exceeding an end surface of the insulating film in a third direction from the respective first interconnects toward the second interconnect. The respective second layers have a surface on a side of the first interconnects, and a width in the second direction of the surface is wider than a width in the second direction of the first interconnect.