公开(公告)号：US10283706B2

公开(公告)日：2019-05-07

申请号：US15705074

申请日：2017-09-14

申请人： TOSHIBA MEMORY CORPORATION

发明人： Takayuki Ishikawa ,  Sanggyu Koh ,  Tetsu Morooka

IPC分类号： H01L27/24 ,  H01L45/00

摘要： A memory device includes first interconnects extending in a first direction; a second interconnect extending in a second direction crossing the first interconnects; an insulating film provided between two first interconnects; and a resistance change film between the first interconnects and the second interconnect. The resistance change film includes a first layer and second layers, the first layer extending in the second direction along the second interconnect, and the second layers being provided selectively between the respective first interconnects and the first layer. The second layers protrude toward the second interconnect exceeding an end surface of the insulating film in a third direction from the respective first interconnects toward the second interconnect. The respective second layers have a surface on a side of the first interconnects, and a width in the second direction of the surface is wider than a width in the second direction of the first interconnect.