公开(公告)号：US10910388B2

公开(公告)日：2021-02-02

申请号：US16518030

申请日：2019-07-22

申请人： Toshiba Memory Corporation

发明人： Natsuki Fukuda ,  Satoshi Nagashima ,  Tetsu Morooka ,  Noritaka Ishihara

IPC分类号： H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/06 ,  H01L21/311 ,  H01L21/764 ,  H01L21/28

摘要： According to one embodiment, a semiconductor storage device includes a first charge storage part, a first insulating part, a second charge storage part, a second insulating part, a first select transistor, and a hollow part. The first charge storage part is at a first position separated from a surface of a substrate by a first distance in a third direction. The first select transistor is at a second position separated from the surface of the substrate by a second distance in the third direction. The second distance is greater than the first distance. The hollow part is up to a third position in the third direction separated from the surface of the substrate by a third distance in the third direction. The third distance is greater than or equal to the first distance and shorter than or equal to the second distance.