公开(公告)号：US10790443B2

公开(公告)日：2020-09-29

申请号：US15909125

申请日：2018-03-01

申请人： TOSHIBA MEMORY CORPORATION

发明人： Yefei Han ,  Tetsu Morooka

IPC分类号： H01L45/00 ,  H01L27/24 ,  G11C7/06 ,  G11C13/00 ,  G11C7/12 ,  G11C29/00 ,  G11C29/04

摘要： A memory device includes a first conductive layer and a second conductive layer. A variable resistance layer is disposed between the first conductive layer and the second conductive layer and includes a first layer containing a semiconductor or a first metal oxide, and a second layer containing a second metal oxide. A phase-change layer is disposed either between the first conductive layer and the variable resistance layer or between the second conductive layer and the variable resistance layer.